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41. 发明授权

US6061380A Vertical cavity surface emitting laser with doped active region and method of fabrication 失效
标题翻译：具有掺杂有源区的垂直腔表面发射激光器及其制造方法
公开(公告)号：US6061380A
公开(公告)日：2000-05-09
申请号：US929515
申请日：1997-09-15
申请人： Wenbin Jiang , Michael S. Lebby , Jamal Ramdani
发明人： Wenbin Jiang , Michael S. Lebby , Jamal Ramdani
IPC分类号： H01S5/183 , H01S5/30 , H01S3/08 , H01S3/085
CPC分类号： H01S5/183 , B82Y20/00 , H01S5/3086 , H01S5/34313
摘要： VCSEL for high speed operation and method of fabrication including a substrate element, a first stack of distributed Bragg reflectors disposed on a surface of the substrate element, an active region lattice matched to a surface of the first stack of distributed Bragg reflectors, and a second stack of distributed Bragg reflectors lattice matched to a surface of the active region. The active region includes a plurality of quantum well layers, or structures, and a plurality of doped barrier layers. The doping of the barrier layers allows for a faster recombination time of the carriers prior to any occurrence of lateral carrier diffusion. This faster recombination time of the carriers prevents turn-off tails when the VCSEL device is switched off.
摘要翻译：用于高速操作的VCSEL和制造方法包括衬底元件，布置在衬底元件的表面上的分布式布拉格反射器的第一叠层，与分布布拉格反射器的第一叠层的表面匹配的有源区域晶格，以及第二分布的布拉格反射器的堆叠与有源区域的表面匹配。有源区包括多个量子阱层或结构，以及多个掺杂阻挡层。势垒层的掺杂允许在任何出现横向载流子扩散之前载体的更快的复合时间。当VCSEL器件关闭时，载波的这种更快的复合时间防止关断尾部。

42. 发明授权

US6026111A Vertical cavity surface emitting laser device having an extended cavity 失效
标题翻译：具有延伸空腔的垂直腔表面发射激光器件
公开(公告)号：US6026111A
公开(公告)日：2000-02-15
申请号：US959572
申请日：1997-10-28
申请人： Wenbin Jiang , Michael S. Lebby , Jamal Ramdani
发明人： Wenbin Jiang , Michael S. Lebby , Jamal Ramdani
IPC分类号： H01S5/14 , H01S5/183 , H01S3/08
CPC分类号： H01S5/18308 , H01S2301/166 , H01S5/18369 , H01S5/18377 , H01S5/1838 , H01S5/18388 , H01S5/2063
摘要： An extended VCSEL structure formed of a first DBR mirror, an active region, a second DBR mirror as partial reflector, and an extended cavity provided by a transparent conductive substrate wafer fused onto the second DBR mirror. The transparent conductive substrate also serves as a convex mirror with a highly reflective dielectric coating to complete the extended cavity VCSEL structure. The use of the extended cavity makes high power single mode operation achievable because an extended cavity introduces high modal loss to the high order laser modes while supporting the lowest order single mode. The large active area allows high output power from the VCSEL.
摘要翻译：由第一DBR镜，有源区，作为部分反射器的第二DBR镜形成的扩展VCSEL结构以及由透明导电衬底晶片提供的扩展腔，所述透明导电衬底晶片融合到第二DBR镜上。透明导电基板还用作具有高反射介电涂层的凸面镜，以完成扩展腔VCSEL结构。使用扩展腔可实现高功率单模操作，因为扩展腔在支持最低阶单模时对高阶激光模式引入高模态损耗。大的有源区域允许来自VCSEL的高输出功率。

43. 发明授权

US6021146A Vertical cavity surface emitting laser for high power single mode operation and method of fabrication 失效
标题翻译：垂直腔表面发射激光器，用于高功率单模操作和制造方法
公开(公告)号：US6021146A
公开(公告)日：2000-02-01
申请号：US929377
申请日：1997-09-15
申请人： Wenbin Jiang , Michael S. Lebby , Jamal Ramdani
发明人： Wenbin Jiang , Michael S. Lebby , Jamal Ramdani
IPC分类号： H01S5/183 , H01S3/085
CPC分类号： H01S5/18308 , B82Y20/00 , H01S2301/166 , H01S2301/176 , H01S5/18333 , H01S5/2063 , H01S5/2072 , H01S5/3054 , H01S5/34313
摘要： A VCSEL for high power single mode operation and method of fabrication including a substrate element, a first stack of distributed Bragg reflectors disposed on a surface of the substrate element, an active region lattice matched to a surface of the first stack of distributed Bragg reflectors, and a second stack of distributed Bragg reflectors lattice matched to a surface of the active region. The VCSEL structure includes an enhanced conductivity region formed within a central portion of the second stack of distributed Bragg reflectors and within the laser emission path. The enhanced conductivity region is defined by either zinc diffusion or beryllium implants. An electrical contact is coupled to a surface of the second stack of distributed Bragg reflectors and an electrical contact is positioned a surface of the substrate element.
摘要翻译：一种用于大功率单模操作的VCSEL及其制造方法，包括：衬底元件，布置在衬底元件表面上的分布式布拉格反射器的第一叠层;与分布布拉格反射器的第一叠层表面匹配的有源区域晶格，以及与激活区域的表面晶格匹配的分布式布拉格反射器的第二堆叠。 VCSEL结构包括形成在分布布拉格反射器的第二堆叠的中心部分内并在激光发射路径内的增强的导电区域。增强的电导率区域由锌扩散或铍植入物定义。电触点耦合到分布布拉格反射器的第二堆叠的表面，并且电触点定位在衬底元件的表面上。

44. 发明授权

US6008067A Fabrication of visible wavelength vertical cavity surface emitting laser 失效
标题翻译：可见波长垂直腔表面发射激光器的制作
公开(公告)号：US6008067A
公开(公告)日：1999-12-28
申请号：US34485
申请日：1998-03-04
申请人： Jamal Ramdani , Michael S. Lebby , Wenbin Jiang
发明人： Jamal Ramdani , Michael S. Lebby , Wenbin Jiang
IPC分类号： H01S5/00 , H01S5/183 , H01S5/343 , H01S3/02
CPC分类号： B82Y20/00 , H01S5/183 , H01S5/3211 , H01S5/34326
摘要： A VCSEL for emitting visible wavelength light including a GaInP substrate element, a first mirror stack with mirror pairs in a GaInP/AlInP material system lattice matched to a GaInP active region. The active region including a quantum well layer, a first barrier layer and a second barrier layer. The active region sandwiched between a first cladding region adjacent the first mirror stack and a second cladding region adjacent a second mirror stack. The second mirror stack lattice matched to the active region and having mirror pairs in a GaInP/AlInP material system. The VCSEL device capable of emitting light in the range of 635-650 nanometers.
摘要翻译：用于发射包括GaInP衬底元件的可见波长光的VCSEL，在与GaInP有源区匹配的GaInP / AlInP材料系统晶格中具有镜对的第一反射镜叠层。有源区包括量子阱层，第一势垒层和第二势垒层。有源区被夹在与第一反射镜叠层相邻的第一包层区域和邻近第二反射镜叠层的第二包层区域之间。第二反射镜堆叠晶格与有源区域匹配，并在GaInP / AlInP材料体系中具有镜像对。能够发射635-650纳米范围内的光的VCSEL器件。

45. 发明授权

US5978398A Long wavelength vertical cavity surface emitting laser 失效
标题翻译：长波长垂直腔表面发射激光
公开(公告)号：US5978398A
公开(公告)日：1999-11-02
申请号：US904189
申请日：1997-07-31
申请人： Jamal Ramdani , Michael S. Lebby , Philip Kiely
发明人： Jamal Ramdani , Michael S. Lebby , Philip Kiely
IPC分类号： H01S5/183 , H01S5/323 , H01S5/34 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/183 , H01S5/3202 , H01S5/32366 , H01S5/3406 , H01S5/34306
摘要： A VCSEL for emitting long wavelength light including a GaAs substrate element, a first mirror stack with mirror pairs in a GaAs/AlGaAs material system lattice matched to a GaInAsN active region. The active region including an active structure sandwiched between a first cladding region adjacent the first mirror stack, and a second cladding region. The first and second cladding regions including an AlGaAs/GaAs material system. The active structure including a nitride based quantum well and a GaAsP barrier layer. A second mirror stack is lattice matched to the second cladding region and has mirror pairs in a GaAs/AlGaAs material system.
摘要翻译：一种用于发射包括GaAs衬底元件的长波长的VCSEL，在与GaInAsN有源区匹配的GaAs / AlGaAs材料系统晶格中具有镜对的第一反射镜叠层。有源区域包括被夹在邻近第一反射镜叠层的第一包层区域和第二包层区域之间的有源结构。第一和第二包层区包括AlGaAs / GaAs材料体系。该活性结构包括氮化物基量子阱和GaAsP阻挡层。第二反射镜堆叠与第二包层区域晶格匹配，并且在GaAs / AlGaAs材料体系中具有镜对。

46. 发明授权

US5898722A Dual wavelength monolithically integrated vertical cavity surface emitting lasers and method of fabrication 失效
标题翻译：双波长单片集成垂直腔表面发射激光器和制造方法
公开(公告)号：US5898722A
公开(公告)日：1999-04-27
申请号：US813399
申请日：1997-03-10
申请人： Jamal Ramdani , Michael S. Lebby , Wenbin Jiang
发明人： Jamal Ramdani , Michael S. Lebby , Wenbin Jiang
IPC分类号： H01S5/00 , H01S5/343 , H01S5/40 , H01S5/42 , H01S3/10 , H01L21/20 , H01S3/08 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/423 , H01S5/026 , H01S5/18341 , H01S5/18361 , H01S5/18372 , H01S5/34326 , H01S5/4087
摘要： Dual wavelength monolithically integrated VCSELs and a method of fabrication for emitting a short wavelength light and a long wavelength light including a first mirror stack lattice matched to the surface of a substrate. A short wavelength VCSEL is fabricated and masked during the formation of a long wavelength VCSEL. Each VCSEL further including mirror pairs in a AlAs/AlGaAs material system, an active region lattice matched to a surface of the first mirror stack, and a second mirror stack lattice matched to a surface of the active region and capable of emitting either a short wavelength light or a long wavelength light, dependent upon design parameters. Electrical contacts are coupled to the active regions of the monolithically integrated short wavelength VCSEL and the long wavelength VCSEL. The dual wavelength monolithically integrated VCSELs fabricated as a semiconductor laser chip capable of read/write applications for both CDs and DVDs.
摘要翻译：双波长单片集成VCSEL和用于发射短波长光和长波长光的制造方法，其包括与衬底表面匹配的第一反射镜堆叠晶格。在形成长波长VCSEL的过程中制造短波长VCSEL并进行掩模。每个VCSEL还包括在AlAs / AlGaAs材料系统中的镜对，与第一反射镜叠层的表面匹配的有源区域晶格和与有源区的表面匹配的能够发射短波长的第二反射镜堆叠晶格光或长波长的光，取决于设计参数。电触点耦合到单片集成短波长VCSEL和长波长VCSEL的有源区。双波长单片集成VCSEL作为半导体激光芯片制造，能够对CD和DVD进行读/写应用。

47. 发明授权

US5883912A Long wavelength VCSEL 失效
标题翻译：长波长VCSEL
公开(公告)号：US5883912A
公开(公告)日：1999-03-16
申请号：US762490
申请日：1996-12-09
申请人： Jamal Ramdani , Michael S. Lebby , Wenbin Jiang
发明人： Jamal Ramdani , Michael S. Lebby , Wenbin Jiang
IPC分类号： H01S5/183 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/183 , H01S2302/00 , H01S5/32366 , H01S5/3427 , H01S5/34306
摘要： A VCSEL for emitting long wavelength light including a first mirror stack with mirror pairs in a GaAs/AlGaAs material system lattice matched to a GaAs active region with an active structure sandwiched between a first cladding region adjacent the first mirror stack and a second cladding region, the active structure having a quantum well including one of Germanium and Nitrogen, and a second mirror stack lattice matched to the second cladding region and having mirror pairs in a GaAs/AlGaAs material system.
摘要翻译：一种VCSEL，用于发射长波长的光，其包括在与GaAs有源区匹配的GaAs / AlGaAs材料系统晶格中具有镜对的第一反射镜叠层，其中活性结构夹在邻近第一反射镜叠层的第一包层区域和第二包层区域之间，所述活性结构具有包括锗和氮中的一种的量子阱，以及与所述第二包层区域匹配并在GaAs / AlGaAs材料体系中具有镜对的第二反射镜堆叠晶格。

48. 发明授权

US5848086A Electrically confined VCSEL 失效
标题翻译：电离VCSEL
公开(公告)号：US5848086A
公开(公告)日：1998-12-08
申请号：US762475
申请日：1996-12-09
申请人： Michael S. Lebby , Jamal Ramdani , Wenbin Jiang
发明人： Michael S. Lebby , Jamal Ramdani , Wenbin Jiang
IPC分类号： H01S5/183 , H01S3/19
CPC分类号： H01S5/18313
摘要： A semiconductive substrate (101) with a surface (102) having a first stack of distributed Bragg reflectors (109) disposed on the surface (102) of the semiconductive substrate (101) that has dot patterned features (252 and 354). A first cladding region (113) is disposed on the first stack of distributed Bragg reflectors (109). An active area (117) is disposed on the first cladding region (113) with a second cladding region (123) disposed on the active area (117). A second stack of distributed Bragg reflectors (127) is disposed on the second cladding region (123). The dot patterned features produce an offset in the stacks of reflectors and a portion of the second stack of distributed Bragg reflectors is oxidized, using the offset, to limit the current path.
摘要翻译：具有表面（102）的半导体衬底（101），其具有设置在具有点状图案特征（252和354）的半导体衬底（101）的表面（102）上的分布布拉格反射器（109）的第一堆叠。第一包层区域（113）设置在分布布拉格反射器（109）的第一叠层上。有源区域（117）设置在第一包层区域（113）上，第二包层区域（123）设置在有源区域（117）上。分布布拉格反射器（127）的第二堆叠被布置在第二包层区域（123）上。点图案化特征在反射器堆叠中产生偏移，并且使用偏移来使分布布拉格反射器的第二堆叠的一部分被氧化以限制电流路径。

49. 发明授权

US5796769A Red light vertical cavity surface emitting laser 失效
标题翻译：红光垂直腔表面发射激光
公开(公告)号：US5796769A
公开(公告)日：1998-08-18
申请号：US699319
申请日：1996-08-19
申请人： Jamal Ramdani , Michael S. Lebby , Wenbin Jiang
发明人： Jamal Ramdani , Michael S. Lebby , Wenbin Jiang
IPC分类号： H01S5/183 , H01S5/323 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/183 , H01S5/34313 , H01S2302/00 , H01S5/32333 , H01S5/3407 , H01S5/34326
摘要： A stack (103) of distributed Bragg reflectors is disposed on the surface (105) of a semiconductor substrate (102). The stack (103) includes a plurality of alternating layers of material having alternating refractive indexes with the stack (103) having a first dopant type. A first cladding region (104) is disposed on the stack (103) with an active area (106) disposed on the first cladding region (104). The active area (106) includes layers of indium aluminum gallium phosphide, indium gallium arsenide phosphide, and indium aluminum gallium phosphide. A second cladding region (107) is disposed on the active area (106) with a stack (108) of distributed Bragg reflectors disposed on cladding region (107). A contact region (109) is disposed on the stack (108).
摘要翻译：分布式布拉格反射器的堆叠（103）设置在半导体衬底（102）的表面（105）上。堆叠（103）包括具有交替折射率的多个交替层，堆叠（103）具有第一掺杂剂类型。第一包层区域（104）设置在堆叠（103）上，具有设置在第一包层区（104）上的有源区（106）。有源区（106）包括铟镓磷化镓，砷化铟镓磷化铟和磷化铟镓磷酸盐层。第二包层区域（107）被布置在有源区域（106）上，其中布置布拉格反射器的堆叠（108）布置在包层区域（107）上。接触区域（109）设置在堆叠（108）上。

50. 发明授权

US08624260B2 Enhancement-mode GaN MOSFET with low leakage current and improved reliability 有权
标题翻译：增强型GaN MOSFET具有低漏电流和可靠性
公开(公告)号：US08624260B2
公开(公告)日：2014-01-07
申请号：US12697235
申请日：2010-01-30
申请人： Jamal Ramdani
发明人： Jamal Ramdani
IPC分类号： H01L29/15
CPC分类号： H01L29/66431 , H01L21/02458 , H01L21/0254 , H01L21/28264 , H01L29/1054 , H01L29/2003 , H01L29/205 , H01L29/513 , H01L29/518 , H01L29/66462 , H01L29/66522 , H01L29/7787
摘要： An enhancement-mode GaN MOSFET with a low leakage current and an improved reliability is formed by utilizing a SiO2/Si3N4 gate insulation layer on an AlGaN (or InAlGaN) barrier layer. The Si3N4 portion of the SiO2/Si3N4 gate insulation layer significantly reduces the formation of interface states at the junction between the gate insulation layer and the barrier layer, while the SiO2 portion of the SiO2/Si3N4 gate insulation layer significantly reduces the leakage current.
摘要翻译：通过在AlGaN（或InAlGaN）阻挡层上利用SiO 2 / Si 3 N 4栅极绝缘层，形成具有低漏电流和提高的可靠性的增强型GaN MOSFET。 SiO 2 / Si 3 N 4栅极绝缘层的Si 3 N 4部分显着地减少了在栅极绝缘层和阻挡层之间的接合处的界面态的形成，而SiO 2 / Si 3 N 4栅极绝缘层的SiO 2部分显着降低了漏电流。

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