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41. 发明申请

US20070183188A1 Magnetic device using magnetic domain dragging and method of operating the same 有权
标题翻译：磁性装置使用磁畴拖曳及其操作方法
公开(公告)号：US20070183188A1
公开(公告)日：2007-08-09
申请号：US11657646
申请日：2007-01-25
申请人： Kee-won Kim , Tae-wan Kim , Young-jin Cho , In-Jun Hwang
发明人： Kee-won Kim , Tae-wan Kim , Young-jin Cho , In-Jun Hwang
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C19/0808
摘要： Example embodiments may provide a magnetic device using magnetic domain dragging and a method of operating the same. An example embodiment magnetic device may include a data storage cell with a free layer having a switchable magnetization direction and a plurality of adjoining magnetic domains, a reference layer formed to correspond to a portion of the free layer and having a pinned magnetization direction, wherein a plurality of data bit regions may be formed in an array in the free layer, each of the data bit regions being formed with an effective size unit of the reference layer, so that the data storage cell may store a plurality of bits of data in an array, and a first input portion electrically connected to at least one of the data bit regions of the free layer and the reference layer to apply at least one of a writing signal and a reading signal; and a second input portion electrically connected to the free layer to drag data stored in data bit regions of the free layer toward an adjacent data bit region, and applying a dragging signal for magnetic domain dragging.
摘要翻译：示例性实施例可以提供使用磁畴牵引的磁性装置及其操作方法。一个示例性实施例磁性装置可以包括具有自由层的数据存储单元，该自由层具有可切换的磁化方向和多个相邻的磁畴，所述参考层形成为对应于自由层的一部分并且具有钉扎的磁化方向，其中a 可以在自由层中的阵列中形成多个数据位区域，每个数据位区域由参考层的有效大小单位形成，使得数据存储单元可以在多个数据位区域中存储多个数据位阵列，以及电连接到自由层和参考层的数据位区域中的至少一个的第一输入部分，以施加写信号和读信号中的至少一个; 以及第二输入部分，其电连接到所述自由层，以将存储在所述自由层的数据位区域中的数据拖向相邻数据位区域，以及施加用于磁畴拖动的拖动信号。

42. 发明授权

US07182801B2 Non-magnetic nickel powders and method for preparing the same 失效
标题翻译：非磁性镍粉及其制备方法
公开(公告)号：US07182801B2
公开(公告)日：2007-02-27
申请号：US10819917
申请日：2004-04-08
申请人： Soon-ho Kim , Jae-young Choi , Tae-wan Kim , Eun-bum Cho , Yong-kyun Lee
发明人： Soon-ho Kim , Jae-young Choi , Tae-wan Kim , Eun-bum Cho , Yong-kyun Lee
IPC分类号： B22F1/00
CPC分类号： B22F1/0085 , B22F2999/00 , B82Y25/00 , H01F1/14733 , H01M4/52 , Y10S977/777 , B22F1/0022
摘要： Provided are non-magnetic nickel powders and a method for preparing the same. The nickel powders have non-magnetic property and a HCP crystal structure. The method include (a) dispersing nickel powders with a FCC crystal structure in an organic solvent to prepare a starting material dispersion, and (b) heating the starting material dispersion to transform the nickel powders with the FCC crystal structure to the nickel powders with the HCP crystal structure. The nickel powders do not exhibit magnetic agglomeration phenomenon. Therefore, the pastes for inner electrode formation in various electronic devices, which contain the nickel powders of the present invention, can keep the well-dispersed state. Also, inner electrodes made of the nickel powders can have a low impedance value even at high frequency band.
摘要翻译：提供非磁性镍粉末及其制备方法。镍粉具有非磁性和HCP晶体结构。该方法包括（a）将FCC晶体结构的镍粉分散在有机溶剂中以制备原料分散体，（b）加热原料分散液，将FCC晶体结构的镍粉转化为镍粉， HCP晶体结构。镍粉不显示磁性聚集现象。因此，含有本发明的镍粉末的各种电子器件中的内部电极形成用糊料可以保持良好的分散状态。此外，即使在高频带，由镍粉制成的内电极也可以具有低阻抗值。

43. 发明授权

US07052583B2 Magnetron cathode and magnetron sputtering apparatus comprising the same 有权
标题翻译：磁控管阴极和包含该磁控溅射装置的磁控溅射装置
公开(公告)号：US07052583B2
公开(公告)日：2006-05-30
申请号：US10755452
申请日：2004-01-13
申请人： Sergiy Yakovlevich Navala , Yuri Nikolaevich Tolmachev , Dong-joon Ma , Tae-wan Kim
发明人： Sergiy Yakovlevich Navala , Yuri Nikolaevich Tolmachev , Dong-joon Ma , Tae-wan Kim
IPC分类号： C23C14/00
CPC分类号： C23C14/35 , H01J37/3408
摘要： A magnetron cathode and a sputtering apparatus including the same are provided. The magnetron cathode includes three or more magnet units, each of which comprises a single magnet or a plurality of magnets having the same poles facing toward the same direction, wherein one magnet unit is disposed around the outer circumference of another magnet unit and adjacent magnet units have opposite poles facing toward the same direction. Uniform magnetic field distribution is obtained. Therefore, the erosion profile of a target is wide and uniform.
摘要翻译：提供了一种磁控管阴极和包括该磁控管阴极的溅射装置。磁控管阴极包括三个或更多个磁体单元，每个磁体单元包括单个磁体或具有朝向相同方向的相同磁极的多个磁体，其中一个磁体单元围绕另一个磁体单元的外圆周设置，并且相邻的磁体单元具有朝向相同方向的相对极。获得均匀的磁场分布。因此，目标的侵蚀特征是宽而均匀的。

44. 发明授权

US08422275B2 Magnetic memory device and method 有权
公开(公告)号：US08422275B2
公开(公告)日：2013-04-16
申请号：US12372492
申请日：2009-02-17
申请人： In-jun Hwang , Tae-wan Kim , Won-cheol Jeong
发明人： In-jun Hwang , Tae-wan Kim , Won-cheol Jeong
IPC分类号： G11C11/00
CPC分类号： G11C11/15
摘要： An exemplary embodiment of a magnetic random access memory (MRAM) device includes a magnetic tunnel junction having a free layer, a first electrode (first magnetic field generating means) having a first portion that covers a surface of the free layer, and an electric power source connected to the first electrode via a connection that covers less than half of the first portion of the first electrode. Another exemplary embodiment of an MRAM device includes a magnetic tunnel junction, first and second electrodes (first and second magnetic field generating means) directly connected to the magnetic tunnel junction on opposite sides of the magnetic tunnel junction, and an electric power source having one pole connected to the first electrode via a first connection and having a second pole connected to the second electrode via a second connection, wherein the first and second connections are laterally offset from the connections between the first and second electrodes and the magnetic tunnel junction. Methods of operating and manufacturing these magnetic random access memories are also disclosed.

45. 发明申请

US20110071124A1 Compounds that Inhibit Production of sAPPB and AB and Uses Thereof 审中-公开
标题翻译：抑制sAPPB和AB生产的化合物及其用途
公开(公告)号：US20110071124A1
公开(公告)日：2011-03-24
申请号：US12858837
申请日：2010-08-18
申请人： Tae-wan Kim , Donald W. Landry , Jeremy C. Hwang , Shi Xian Deng , Gangli Gong , Yuli Xie , Yidong Liu , Alison Rinderspacher
发明人： Tae-wan Kim , Donald W. Landry , Jeremy C. Hwang , Shi Xian Deng , Gangli Gong , Yuli Xie , Yidong Liu , Alison Rinderspacher
IPC分类号： A61K31/40 , A61K31/445 , A61K31/397 , A61K31/165 , A61K31/138 , A61K31/495 , A61K31/41 , A61K31/4184 , A61K31/35 , A61P25/28 , C12N9/99
CPC分类号： A61K31/535 , A61K31/351 , A61K31/395 , A61K31/40 , A61K31/4178 , A61K31/496
摘要： The present invention relates to compounds with activity as inhibitors of sAPPβ and Aβ production, and methods for treating, preventing, or ameliorating neurodegenerative diseases, such as Alzheimer's disease and pharmaceutical compositions containing such candidate compounds.
摘要翻译：本发明涉及具有作为sAPP和bgr的抑制剂活性的化合物。和A＆bgr 生产和治疗，预防或改善神经变性疾病如阿尔茨海默氏病的方法和含有这些候选化合物的药物组合物。

46. 发明授权

US07508041B2 Magnetic memory device having uniform switching characteristics and capable of switching with low current and associated methods 有权
标题翻译：磁存储器件具有均匀的开关特性并且能够以低电流和相关方法切换
公开(公告)号：US07508041B2
公开(公告)日：2009-03-24
申请号：US11208618
申请日：2005-08-23
申请人： Jin-seo Noh , Tae-wan Kim , Hong-seog Kim , Eun-sik Kim
发明人： Jin-seo Noh , Tae-wan Kim , Hong-seog Kim , Eun-sik Kim
IPC分类号： H01L29/82 , H01L43/00
CPC分类号： H01L27/228 , H01L43/08 , H01L43/12
摘要： A magnetic memory device includes a magnetic tunneling junction (MTJ) structure having a cylindrical shape. Elements of the MTJ structure are co-axial. The MTJ structure includes a conductive layer, an insulating layer co-axially formed around the conductive layer and a material layer formed around the insulating layer, the material layer being co-axial with the conductive layer and having a plurality of magnetic layers. The material layer includes a lower magnetic layer, a tunneling layer, and an upper magnetic layer that are sequentially stacked around and along the conductive layer.
摘要翻译：磁存储器件包括具有圆柱形形状的磁隧道结（MTJ）结构。 MTJ结构的元素是同轴的。 MTJ结构包括导电层，围绕导电层同轴形成的绝缘层和围绕绝缘层形成的材料层，该材料层与导电层同轴并具有多个磁性层。材料层包括依次层叠并沿着导电层的下磁性层，隧道层和上磁性层。

47. 发明授权

US07262474B2 Magnetic memory device and method of manufacturing the same 有权
标题翻译：磁记忆体装置及其制造方法
公开(公告)号：US07262474B2
公开(公告)日：2007-08-28
申请号：US11045476
申请日：2005-01-31
申请人： Tae-wan Kim , Kook-rin Char , Dae-sik Kim
发明人： Tae-wan Kim , Kook-rin Char , Dae-sik Kim
IPC分类号： H01L29/82 , H01L43/00
CPC分类号： H01L43/12 , B82Y10/00 , G11C11/161 , H01L27/228 , H01L43/08
摘要： In a magnetic memory device, and a method of manufacturing the same, the magnetic memory device includes a switching device, and a magnetic tunneling junction (MTJ) cell connected to the switching device, the MTJ cell including a lower electrode connected to the switching device and a lower magnetic layer, a tunneling film containing fluorine, an upper magnetic layer, and a capping layer, sequentially stacked on the lower electrode.
摘要翻译：在磁存储器件及其制造方法中，磁存储器件包括开关器件和连接到开关器件的磁隧道结（MTJ）单元，MTJ单元包括连接到开关器件的下电极并且下层磁性层，含氟的隧道膜，上部磁性层和覆盖层依次层叠在下部电极上。

48. 发明申请

US20070198618A1 Magnetic memory device using magnetic domain motion 有权
标题翻译：磁存储器件采用磁畴运动
公开(公告)号：US20070198618A1
公开(公告)日：2007-08-23
申请号：US11708352
申请日：2007-02-21
申请人： Kee-won Kim , Tae-wan Kim , Young-jin Cho , In-jun Hwang
发明人： Kee-won Kim , Tae-wan Kim , Young-jin Cho , In-jun Hwang
IPC分类号： G06F15/02
CPC分类号： G11C11/16 , G11C19/0808
摘要： Example embodiments may provide a magnetic memory device. The example embodiment magnetic memory devices may include a plurality of memory tracks, bit lines, connectors, a first input portion, and/or selectors. The memory track(s) may be stacked on a substrate to form a multi-stack. A plurality of magnetic domains may be formed in the memory track so that a data bit may be represented by a magnetic domain and may be stored in an array. The bit line(s) may be formed along respective memory tracks. The connector(s) may form a magnetic tunnel junction (MTJ) cell with one data bit region of the memory track. The first input portion may be electrically connected to each memory track and may input a magnetic domain motion signal to move data stored on a data bit region of the memory track to an adjoining data bit region. The selector(s) may select a memory track from a plurality of memory tracks on which a reading and/or writing operation may to be performed.
摘要翻译：示例性实施例可以提供磁存储器装置。示例性实施例磁存储器件可以包括多个存储器轨道，位线，连接器，第一输入部分和/或选择器。存储器轨道可以堆叠在衬底上以形成多堆叠。可以在存储器轨道中形成多个磁畴，使得数据位可以由磁畴表示并且可以存储在阵列中。位线可以沿着各个存储器轨道形成。连接器可以形成具有存储器轨道的一个数据位区域的磁性隧道结（MTJ）单元。第一输入部分可以电连接到每个存储器轨道，并且可以输入磁畴运动信号以将存储在存储器轨道的数据位区域上的数据移动到相邻的数据位区域。选择器可以从其上可以执行读取和/或写入操作的多个存储器轨道中选择存储器轨道。

49. 发明申请

US20070181227A1 Non-magnetic nickel powders and method for preparing the same 失效
标题翻译：非磁性镍粉及其制备方法
公开(公告)号：US20070181227A1
公开(公告)日：2007-08-09
申请号：US11710406
申请日：2007-02-26
申请人： Soon-ho Kim , Jae-young Choi , Tae-wan Kim , Eun-bum Cho , Yong-kyun Lee
发明人： Soon-ho Kim , Jae-young Choi , Tae-wan Kim , Eun-bum Cho , Yong-kyun Lee
IPC分类号： C22C19/03
CPC分类号： B22F1/0003 , B22F1/0085 , B22F2998/10 , B22F1/0022
摘要： Provided are non-magnetic nickel powders and a method for preparing the same. The nickel powders are non-magnetic and have a HCP crystal structure. An exemplary method includes (a) dispersing nickel powders with a FCC crystal structure in an organic solvent to prepare a starting material dispersion, and (b) heating the starting material dispersion to transform the nickel powders with the FCC crystal structure to the nickel powders with the HCP crystal structure. The nickel powders do not exhibit magnetic agglomeration or aggregation phenomenon. Therefore, exemplary pastes for inner electrode formation in various electronic devices, which contain the nickel powders of the present disclosure, can be provided in a relatively uniform, well-dispersed state because of the reduced aggregation and agglomeration of the nickel powder. Also, inner electrodes made of the nickel powders can have a low impedance value even at high frequency band.
摘要翻译：提供非磁性镍粉末及其制备方法。镍粉是非磁性的，具有HCP晶体结构。一种示例性方法包括（a）将FCC晶体结构的镍粉分散在有机溶剂中以制备原料分散体，和（b）加热原料分散体以将具有FCC晶体结构的镍粉转化为镍粉， HCP晶体结构。镍粉末不会发生磁性聚集或聚集现象。因此，由于镍粉的聚集和聚集减少，所以可以以相对均匀的，良好分散的状态提供包含本公开的镍粉末的各种电子器件中的内部电极形成的示例性糊料。此外，即使在高频带，由镍粉制成的内电极也可以具有低阻抗值。

50. 发明申请

US20070154630A1 Method for fabricating magnetic tunnel junction device 审中-公开
标题翻译：制造磁性隧道结器件的方法
公开(公告)号：US20070154630A1
公开(公告)日：2007-07-05
申请号：US11707949
申请日：2007-02-20
申请人： Tae-wan Kim , Beong-ki Cho , Hee-jae Shim
发明人： Tae-wan Kim , Beong-ki Cho , Hee-jae Shim
IPC分类号： B05D5/12
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3903 , G11B5/3909 , G11C11/15 , H01F10/3254 , H01F41/307 , H01L43/08 , Y10T428/31826
摘要： Provided are a magnetic tunnel junction (MTJ) device and a method for fabricating the same. The MTJ device includes a substrate, and a fixed layer, a tunnel barrier, and a free layer sequentially stacked on the substrate. A magnetoresistance buffer layer formed of a metallic nitride is interposed between the fixed layer and the tunnel barrier. The entire MTJ device is thermally treated to reduce a magnetic junction resistance thereof. Nitrogen in the magnetoresistance buffer layer having a predetermined thickness is combined with elements of the tunnel barrier, thus improving uniformity of the tunnel barrier. Further, by performing nitrogen plasma processing and a thermal treatment, a high-performance MTJ device with a high MR ratio and a low RA value can be fabricated.
摘要翻译：提供一种磁性隧道结（MTJ）装置及其制造方法。 MTJ装置包括基板，固定层，隧道势垒和顺序堆叠在基板上的自由层。由固定层和隧道势垒之间插入由金属氮化物形成的磁阻缓冲层。整个MTJ装置被热处理以降低其磁结电阻。具有预定厚度的磁阻缓冲层中的氮与隧道势垒的元件组合，从而提高隧道势垒的均匀性。此外，通过进行氮等离子体处理和热处理，可以制造具有高MR比和低RA值的高性能MTJ器件。

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