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42. 发明授权

US6100590A Low capacitance multilevel metal interconnect structure and method of manufacture 有权
标题翻译：低容量多层金属互连结构及其制造方法
公开(公告)号：US6100590A
公开(公告)日：2000-08-08
申请号：US198312
申请日：1998-11-23
申请人： Visvamohan Yegnashankaran , Hengyang James Lin , Kevin Weaver
发明人： Visvamohan Yegnashankaran , Hengyang James Lin , Kevin Weaver
IPC分类号： H01L23/522 , H01L29/00
CPC分类号： H01L23/5222 , H01L2924/0002
摘要： A low capacitance multilevel metal interconnect structure for use in integrated circuits that provides for increased IC device speed and that includes a plurality of patterned metal layers separated and supported by an interconnect dielectric material. The low capacitance multilevel metal interconnect structure has interconnect structure related capacitance lowering gaps in the interconnect dielectric material with the gaps, adjoining at least one of the patterned metal layers. While the gaps adjoin at least the uppermost patterned metal layer, they can also extend downward through the interconnect dielectric material such that they also adjoin one or more patterned metal layers that underlie the uppermost patterned metal layer. A process for the manufacture of the low capacitance multilevel metal interconnect structure includes a step of removing interconnect dielectric material from a conventional multilevel metal interconnect structure to form gaps adjoining at least one of the patterned metal layers. The gaps are formed without removing a substantial amount of interconnect dielectric material from directly underneath any patterned metal layer. This removal can be accomplished with an anisotropic etch and the gaps can be filled with air.
摘要翻译：用于集成电路中的低电容多电平金属互连结构，其提供增加的IC器件速度，并且包括由互连电介质材料分离和支撑的多个图案化金属层。低电容多电平金属互连结构具有互连结构相关的电容降低了具有间隙的互连电介质材料中的间隙，邻接至少一个图案化金属层。尽管间隙至少与最上图案化的金属层相邻，但是它们也可以向下延伸通过互连电介质材料，使得它们也邻接在最上图案化金属层之下的一个或多个图案化的金属层。用于制造低电容多层金属互连结构的方法包括从传统的多层金属互连结构去除互连电介质材料以形成与至少一个图案化金属层相邻的间隙的步骤。形成间隙，而不会从任何图案化的金属层的正下方去除大量的互连电介质材料。这种去除可以通过各向异性蚀刻来实现，并且间隙可以用空气填充。

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