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    • 45. 发明申请
    • Apparatus and method for adopting an orphan I/O port in a redundant storage controller
    • 在冗余存储控制器中采用孤立I / O端口的装置和方法
    • US20050102557A1
    • 2005-05-12
    • US10946341
    • 2004-09-21
    • Ian DaviesGene MaineVictor Pecone
    • Ian DaviesGene MaineVictor Pecone
    • G06F11/00
    • G06F11/2092G06F11/2005G06F11/2033
    • A storage controller configured to adopt orphaned I/O ports is disclosed. The controller includes multiple field-replaceable units (FRUs) that plug into a backplane having local buses. At least two of the FRUs have microprocessors and memory for processing I/O requests received from host computers for accessing storage devices controlled by the controller. Other of the FRUs include I/O ports for receiving the requests from the hosts and bus bridges for bridging the I/O ports to the backplane local buses in such a manner that if one of the processing FRUs fails, the surviving processing FRU detects the failure and responsively adopts the I/O ports previously serviced by the failed FRU to service the subsequently received I/O requests on the adopted I/O ports. The I/O port FRUs also include I/O ports for transferring data with the storage devices that are also adopted by the surviving processing FRU.
    • 公开了一种配置成采用孤立I / O端口的存储控制器。 控制器包括插入具有本地总线的背板的多个现场可更换单元(FRU)。 至少两个FRU具有微处理器和用于处理从主计算机接收的用于访问由控制器控制的存储设备的I / O请求的存储器。 其他FRU包括用于接收来自主机的请求的I / O端口和用于将I / O端口桥接到背板本地总线的请求,使得如果处理FRU中的一个FRU失败,则幸存处理FRU检测到 故障并且响应地采用先前由故障FRU服务的I / O端口来服务于在所采用的I / O端口上随后接收的I / O请求。 I / O端口FRU还包括用于与存活处理FRU所采用的存储设备传输数据的I / O端口。
    • 47. 发明授权
    • Mesa semiconductor device
    • 梅萨半导体器件
    • US4698901A
    • 1987-10-13
    • US902245
    • 1986-08-29
    • Ian DaviesSydney CottonAnthony M. Howard
    • Ian DaviesSydney CottonAnthony M. Howard
    • H01L21/329H01L21/68H01L23/373H01L21/78
    • H01L21/6835H01L23/3732H01L29/6609H01L2924/0002H01L2924/3011
    • A method of fabricating two terminal mesa semiconductor devices comprising etching a surface doped and metal coated silicon slice thereby to form a plurality of silicon frusta each capped by a metal contact pad, covering the frusta side of the slice with a metal contact continuity layer and then with a handle layer formed to lie parallel with that surface of the silicon slice which is remote from the frusta, lapping away the silicon slice to expose parts of the handle layer which extend between the frusta so that the frusta are separated so as to define discrete mesas held together by the handle layer, forming one of the two terminals on a face of the mesas remote from the contact pads, removing the handle layer to reveal the contact pads and bonding each contact pad thereby revealed to the metallized face of a diamond heat sink, one heat sink to each contact pad, which heat sink forms a part of the other of the two terminals of each mesa semiconductor device.
    • 一种制造两个端子台面半导体器件的方法,包括蚀刻表面掺杂和金属涂覆的硅片,从而形成多个硅片,每个硅片由金属接触焊盘覆盖,用金属接触连续性层覆盖片的截头体侧,然后 其中手柄层形成为与硅片的远离截头圆锥体的表面平行,研磨硅片以暴露在截头锥体之间延伸的手柄层的部分,使得截头体被分离以限定离散的 台面由手柄层保持在一起,在远离接触垫的台面的表面上形成两个端子之一,去除手柄层以露出接触垫并且将每个接触垫粘合,从而显露出金刚石表面的金刚石热 吸收每个接触焊盘的一个散热器,该散热器形成每个台面半导体器件的两个端子中的另一个的一部分。