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41. 发明授权

US06985899B2 Method and system for composing a query for a database and traversing the database 有权
公开(公告)号：US06985899B2
公开(公告)日：2006-01-10
申请号：US09996127
申请日：2001-11-27
申请人： Victor Chan , Fen Wang , Mark W. Hubbard
发明人： Victor Chan , Fen Wang , Mark W. Hubbard
IPC分类号： G06F17/30
CPC分类号： G06F17/30433 , G06F17/30477 , Y10S706/922 , Y10S707/99933 , Y10S707/99934 , Y10S707/99935 , Y10S707/99936 , Y10S707/99943 , Y10S707/99945
摘要： A system and method of composing a query object for application against a database is provided. The method composes a selection clause for the query. Next, a criteria clause for the query is generated, with the criteria clause comprising input criteria related to the query, additional criteria specified against the query, and generated criteria based on a joint relationship. Next a source clause utilizing elements in the database accessed by the query is generated. A database traversal system and method is provided. The method identifies all tables directly accessible by each table and creates a data structure comprising an entry for each table. The entry comprises an identification field for each table and a link field identifying all tables directly accessible by each table. The data structure is traversed and an optimum path of the traversal paths utilizing data obtained from traversing the data structure is identified.

42. 发明申请

US20050245081A1 Material for contact etch layer to enhance device performance 失效
标题翻译：用于接触蚀刻层的材料以增强器件性能
公开(公告)号：US20050245081A1
公开(公告)日：2005-11-03
申请号：US10835949
申请日：2004-04-30
申请人： Ashima Chakravarti , Shreesh Narasimha , Victor Chan , Judson Holt , Satya Chakravarti
发明人： Ashima Chakravarti , Shreesh Narasimha , Victor Chan , Judson Holt , Satya Chakravarti
IPC分类号： H01L21/768 , C23C16/34 , H01L21/318 , H01L21/469 , H01L29/78
CPC分类号： H01L21/0217 , C23C16/345 , H01L21/02271 , H01L21/02274 , H01L21/3185 , H01L29/7843
摘要： Stress level of a nitride film is adjusted as a function of two or more of the following: identity of a starting material precursor used to make the nitride film; identity of a nitrogen-containing precursor with which is treated the starting material precursor; ratio of the starting material precursor to the nitrogen-containing precursor; a set of CVD conditions under which the film is grown; and/or a thickness to which the film is grown. A rapid thermal chemical vapor deposition (RTCVD) film produced by reacting a compound containing silicon, nitrogen and carbon (such as bis-tertiary butyl amino silane (BTBAS)) with NH3 can provide advantageous properties, such as high stress and excellent performance in an etch-stop application. An ammonia-treated BTBAS film is particularly excellent in providing a high-stress property, and further having maintainability of that high-stress property over repeated annealing.
摘要翻译：氮化膜的应力水平作为以下两个或更多个的函数来调节：用于制造氮化物膜的原料前体的同一性; 同时处理起始原料前体的含氮前体; 原料前体与含氮前体的比例; 电影种植的一系列CVD条件; 和/或薄膜生长的厚度。通过使含有硅，氮和碳（例如双叔丁基氨基硅烷（BTBAS））的化合物与NH 3 N 3反应制备的快速热化学气相沉积（RTCVD）膜可以提供有利的性质，例如在蚀刻停止应用中作为高应力和优异的性能。氨处理的BTBAS膜在提供高应力性能方面特别优异，并且在反复退火时还具有高应力性能的可维护性。

43. 发明申请

US20050219418A1 Dynamic cross fading method and apparatus 失效
标题翻译：动态交叉衰落方法和装置
公开(公告)号：US20050219418A1
公开(公告)日：2005-10-06
申请号：US10818408
申请日：2004-04-05
申请人： Victor Chan , Raymond Chow
发明人： Victor Chan , Raymond Chow
IPC分类号： G06T3/00 , G09G5/00 , G09G5/36 , G09G5/39 , H04N5/262 , H04N5/265 , H04N9/74
CPC分类号： H04N9/74 , H04N5/265
摘要： Provided is a method and apparatus for dynamic cross fading. Specifically, an embedded system can display an image produced from a blend of other images. Initially, a first image and a second image are stored in a buffer in a display controller. Then, the display controller extracts pixels from corresponding locations in the first image and the second image. The pixels are combined with weights associated with each image to perform the cross fade calculation. Consequently, the result from the cross fade calculation is transmitted to a display unit connected to the display controller for viewing. The result can also be fetched during a refresh of a panel in the display unit. In either case, the result is transmitted to a display pipe during dynamic cross fading. Thus, any images stored in the buffer remain unchanged.
摘要翻译：提供了一种用于动态交叉衰落的方法和装置。具体来说，嵌入式系统可以显示从其他图像的混合产生的图像。最初，将第一图像和第二图像存储在显示控制器中的缓冲器中。然后，显示控制器从第一图像和第二图像中的相应位置提取像素。将像素与与每个图像相关联的权重组合以执行交叉淡入淡出计算。因此，交叉淡入淡出计算的结果被发送到与显示控制器连接的显示单元进行观看。结果还可以在刷新显示单元中的面板时获取。在任一情况下，在动态交叉衰落期间将结果传输到显示管道。因此，存储在缓冲器中的任何图像保持不变。

44. 发明授权

US06948002B2 Method and system for a computer system to support various communication devices 失效
标题翻译：一种用于支持各种通信设备的计算机系统的方法和系统
公开(公告)号：US06948002B2
公开(公告)日：2005-09-20
申请号：US10010887
申请日：2001-12-07
申请人： Victor Chan , Kit Yin Madelaine Fok , Mark W. Hubbard
发明人： Victor Chan , Kit Yin Madelaine Fok , Mark W. Hubbard
IPC分类号： G06F3/14 , G06Q30/00 , G06F15/16
CPC分类号： H04L67/303 , G06Q30/06 , H04L29/06 , H04L67/02 , H04L69/329
摘要： A system method of interfacing a computer system executing commercial transactions initiated from communication devices, each communication device having a display, with custom display parameters, is provided. For the system and method, at the computer system, for each device, a command is received and translated into a common format command. The common format command is executed and results therefrom are received. A database is accessed having elements identifying sets of display parameters, one set of the sets is for use with the custom display parameters. One set of display parameters is retrieved from the database.
摘要翻译：提供了一种系统方法，用于连接执行从通信设备发起的商业交易的计算机系统，具有显示器的每个通信设备具有自定义显示参数。对于系统和方法，在计算机系统中，对于每个设备，接收命令并将其转换为通用格式命令。执行通用格式命令，并接收其结果。访问具有识别显示参数集的元素的数据库，一组集合用于定制显示参数。从数据库中检索一组显示参数。

45. 发明申请

US20050194596A1 Increasing carrier mobility in NFET and PFET transistors on a common wafer 有权
公开(公告)号：US20050194596A1
公开(公告)日：2005-09-08
申请号：US11110767
申请日：2005-04-21
申请人： Victor Chan , Haining Yang
发明人： Victor Chan , Haining Yang
IPC分类号： H01L21/8238 , H01L27/092 , H01L29/10
CPC分类号： H01L29/7843 , H01L21/823807 , H01L21/823828 , H01L27/092
摘要： Enhanced carrier mobility in transistors of differing (e.g. complementary) conductivity types is achieved on a common chip by provision of two or more respective stressed layers, such as etch stop layers, overlying the transistors with stress being wholly or partially relieved in portions of the respective layers, preferably by implantations with heavy ions such as germanium, arsenic, xenon, indium, antimony, silicon, nitrogen oxygen or carbon in accordance with a block-out mask. The distribution and small size of individual areas of such stressed structures also prevents warping or curling of even very thin substrates.

46. 发明申请

US20050001290A1 SUBSTRATE ENGINEERING FOR OPTIMUM CMOS DEVICE PERFORMANCE 有权
标题翻译：用于最佳CMOS器件性能的基板工程
公开(公告)号：US20050001290A1
公开(公告)日：2005-01-06
申请号：US10604003
申请日：2003-06-20
申请人： Victor Chan , Meikei Leong , Min Yang
发明人： Victor Chan , Meikei Leong , Min Yang
IPC分类号： H01L21/8238 , H01L29/76
CPC分类号： H01L21/823807
摘要： An integrated semiconductor structure having different types of complementary metal oxide semiconductor devices (CMOS), i.e., PFETs and NFETs, located atop a semiconductor substrate, wherein each CMOS device is fabricated such that the current flow for each device is optimal is provided. Specifically, the structure includes a semiconductor substrate that has a (110) surface orientation and a notch pointing in a direction of current flow; and at least one PFET and at least one NFET located on the semiconductor substrate. The at least one PFET has a current flow in a direction and the at least one NFET has a current flow in a direction. The direction is perpendicular to the direction. A method of fabricating such as integrated semiconductor structure is also provided.
摘要翻译：提供了位于半导体衬底顶部的具有不同类型的互补金属氧化物半导体器件（CMOS）即PFET和NFET的集成半导体结构，其中每个CMOS器件被制造成使得每个器件的电流是最佳的。具体地，该结构包括具有（110）表面取向的半导体衬底和指向电流<001>方向的凹口; 以及位于半导体衬底上的至少一个PFET和至少一个NFET。所述至少一个PFET具有沿<110>方向的电流，并且所述至少一个NFET具有沿<100>方向的电流。 <110>方向垂直于<100>方向。还提供了诸如集成半导体结构的制造方法。

47. 发明授权

US08594295B2 Method and apparatus for one number mapping directory presence service 有权
标题翻译：一种数字映射目录存在服务的方法和装置
公开(公告)号：US08594295B2
公开(公告)日：2013-11-26
申请号：US12446038
申请日：2007-10-17
申请人： Victor Chan , William J. Beyda
发明人： Victor Chan , William J. Beyda
IPC分类号： H04M3/42
CPC分类号： H04L51/28 , H04L29/1215 , H04L61/1564 , H04L61/1594 , H04L67/24 , H04M1/274508
摘要： A method includes associating an e-mail address with a plurality of telephone numbers; associating one of the telephone numbers with a one number service (108); allowing telephone calls to the one of the telephone numbers by selecting the e-mail address. In some embodiments, the allowing telephone calls comprises calling a programmed caller number and calling to a called party number associated with the e-mail address. In some embodiments, a called party and a calling party are subscribers to a one-number service (108).
摘要翻译：一种方法包括将电子邮件地址与多个电话号码相关联; 将一个电话号码与一个号码服务相关联（108）; 允许通过选择电子邮件地址拨打电话号码。在一些实施例中，允许的电话呼叫包括呼叫编程的呼叫者号码并呼叫与该电子邮件地址相关联的被叫方号码。在一些实施例中，被叫方和主叫方是一号服务（108）的订户。

48. 发明授权

US08097516B2 Dual trench isolation for CMOS with hybrid orientations 有权
标题翻译：具有混合取向的CMOS的双沟槽隔离
公开(公告)号：US08097516B2
公开(公告)日：2012-01-17
申请号：US12169991
申请日：2008-07-09
申请人： Victor Chan , Meikei Ieong , Rajesh Rengarajan , Alexander Reznicek , Chun-yung Sung , Min Yang
发明人： Victor Chan , Meikei Ieong , Rajesh Rengarajan , Alexander Reznicek , Chun-yung Sung , Min Yang
IPC分类号： H01L21/336
CPC分类号： H01L21/76229
摘要： The present invention provides a semiconductor structure in which different types of devices are located upon a specific crystal orientation of a hybrid substrate that enhances the performance of each type of device. In the semiconductor structure of the present invention, a dual trench isolation scheme is employed whereby a first trench isolation region of a first depth isolates devices of different polarity from each other, while second trench isolation regions of a second depth, which is shallower than the first depth, are used to isolate devices of the same polarity from each other. The present invention further provides a dual trench semiconductor structure in which pFETs are located on a (110) crystallographic plane, while nFETs are located on a (100) crystallographic plane. In accordance with the present invention, the devices of different polarity, i.e., nFETs and pFETs, are bulk-like devices.
摘要翻译：本发明提供了一种半导体结构，其中不同类型的器件位于混合衬底的特定晶体取向上，这增强了每种器件的性能。在本发明的半导体结构中，采用双沟槽隔离方案，由此第一深度的第一沟槽隔离区将彼此不同极性的器件隔离，而第二深度的第二沟槽隔离区比第第一深度用于隔离相同极性的设备。本发明还提供一种双沟槽半导体结构，其中pFET位于（110）结晶平面上，而nFET位于（100）晶面上。根据本发明，不同极性的器件，即nFET和pFETs是大块状器件。

49. 发明申请

US20110282397A1 Ankle Fusion Device, Instrumentation and Methods 有权
标题翻译：踝关节融合装置，仪器与方法
公开(公告)号：US20110282397A1
公开(公告)日：2011-11-17
申请号：US12965691
申请日：2010-12-10
申请人： Martinus Richter , Michael Pinzur , James DeOrio , Oliver Frick , Christophe Geisert , Thomas Loring , Stephen Gilbert , Victor Chan
发明人： Martinus Richter , Michael Pinzur , James DeOrio , Oliver Frick , Christophe Geisert , Thomas Loring , Stephen Gilbert , Victor Chan
IPC分类号： A61B17/86 , A61B17/56
CPC分类号： A61B17/8897 , A61B17/1642 , A61B17/1682 , A61B17/1697 , A61B17/1703 , A61B17/1717 , A61B17/1725 , A61B17/1775 , A61B17/7225 , A61B17/7291 , A61B17/86 , A61B17/8875 , A61B17/921 , A61B2090/3983
摘要： An ankle fusion device has a proximal portion generally aligned with a first longitudinal axis. The proximal portion includes a proximal end and a first fastener hole. The proximal portion has an arcuate curve such that the proximal end is spaced a distance from the first longitudinal axis in a first direction. The first fastener hole is configured to receive a first fastener along a first fastener axis. A distal portion of the ankle fusion device extends to a distal end from the proximal portion along a second longitudinal axis. The second longitudinal axis is angled in second and third directions relative to the first longitudinal axis. The second direction is perpendicular to the first direction and the third direction being opposite the first direction. The distal portion includes a second fastener hole configured to receive a second fastener along a second fastener axis.
摘要翻译：脚踝融合装置具有大致与第一纵向轴线对齐的近端部分。近端部分包括近端和第一紧固件孔。近端部分具有弓形曲线，使得近端在第一方向上与第一纵向轴线间隔开一定距离。第一紧固件孔构造成沿着第一紧固件轴线接收第一紧固件。脚踝融合装置的远端部分沿着第二纵向轴线从近端部分延伸到远端。第二纵向轴线相对于第一纵向轴线在第二和第三方向成角度。第二方向垂直于第一方向，第三方向与第一方向相反。远端部分包括第二紧固件孔，该第二紧固件孔构造成沿着第二紧固件轴线容纳第二紧固件。

50. 发明授权

US07901383B2 Systems and methods for administering a medical regimen 有权
标题翻译：用于管理医疗方案的系统和方法
公开(公告)号：US07901383B2
公开(公告)日：2011-03-08
申请号：US12423035
申请日：2009-04-14
申请人： Mark Follman , Ray Yao , Scott Gisler , Victor Chan
发明人： Mark Follman , Ray Yao , Scott Gisler , Victor Chan
IPC分类号： A61M5/00 , A61M31/00
CPC分类号： A61B5/14532 , A61B5/150022 , A61B5/150305 , A61B5/150358 , A61B5/150786 , A61B5/150793 , A61B5/150809 , A61B5/150824 , A61B5/15087 , A61B5/157 , A61B2562/0295 , A61M5/003 , A61M5/20 , A61M5/31525 , A61M2205/3569 , A61M2205/3576 , A61M2205/52 , G06F19/00 , G06F19/3468
摘要： A medical regimen can be administered with a diagnostic and medication delivery system. In one form the system includes a medication delivery pen with a controller and a monitor for monitoring a characteristic of a bodily fluid with a controller. A case includes a compartment for removably storing the medication delivery pen and the monitor. The case includes a communications link for establishing communication between the controller of the pen and the controller of the monitor. The medication delivery pen and monitor are operable in a first mode cooperative with one another and in a second mode independent of one another.
摘要翻译：医疗方案可以与诊断和药物输送系统一起使用。在一种形式中，系统包括具有控制器的药物输送笔和用于通过控制器监测体液特征的监测器。病例包括用于可移除地存储药物输送笔和监视器的隔间。该情况包括用于在笔的控制器和监视器的控制器之间建立通信的通信链路。药物输送笔和监视器可以彼此协作的第一模式和彼此独立的第二模式操作。

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