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    • 49. 发明申请
    • GALLIUM NITRIDE BULK CRYSTALS AND THEIR GROWTH METHOD
    • 氮化钾块状晶体及其生长方法
    • WO2009039398A1
    • 2009-03-26
    • PCT/US2008077056
    • 2008-09-19
    • UNIV CALIFORNIAHASHIMOTO TADAONAKAMURA SHUJI
    • HASHIMOTO TADAONAKAMURA SHUJI
    • C30B23/02
    • C30B29/406C30B7/10
    • A gallium nitride crystal with a polyhedron shape having exposed {10-10} m- planes and an exposed (000-1) N-polar c-plane, wherein a surface area of the exposed (000-1) N-polar c-plane is more than 10 mm2 and a total surface area of the exposed {10-10} m-planes is larger than half of the surface area of (000-1) N-polar c-plane. The GaN bulk crystals were grown by an ammonothermal method with a higher temperature and temperature difference than is used conventionally, and using an autoclave having a high-pressure vessel with an upper region and a lower region. The temperature of the lower region of the high-pressure vessel is at or above 55O0C, the temperature of the upper region of the high-pressure vessel is set at or above 5000C, and the temperature difference between the lower and upper regions is maintained at or above 3O0C. GaN seed crystals having a longest dimension along the c-axis and exposed large area m-planes are used.
    • 具有暴露的{10-10} m面的多面体形状和暴露的(000-1)N-极性c面的氮化镓晶体,其中暴露(000-1)N-极性c-面的表面积, 平面大于10平方毫米,暴露的{10-10} m面的总表面积大于(000-1)N极C面的表面积的一半。 通过具有比常规使用的更高的温度和温度差的氨热法生长GaN块状晶体,并且使用具有上部区域和下部区域的高压容器的高压釜。 高压容器的下部区域的温度为550℃以上,高压容器的上部区域的温度为500℃以上,下部和上部区域之间的温度差保持在 或高于30℃。 使用沿着c轴具有最长尺寸和暴露的大面积m面的GaN晶种。