专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明申请

US20100135063A1 SEMICONDUCTOR DEVICE INCLUDING BIT LINE GROUPS 有权
标题翻译：包括位线组的半导体器件
公开(公告)号：US20100135063A1
公开(公告)日：2010-06-03
申请号：US12628835
申请日：2009-12-01
申请人： Kiyoshi Nakai , Shuichi Tsukada
发明人： Kiyoshi Nakai , Shuichi Tsukada
IPC分类号： G11C7/12 , G11C11/00 , G11C7/00
CPC分类号： G11C7/18 , G11C2207/005
摘要： A semiconductor device includes: a first read/write amplifier; a second read/write amplifier; a first group of bit lines belonging to the first read/write amplifier; a second group of bit lines belonging to the second read/write amplifier and mixed with the first group of bit lines. One of the first group of bit lines and one of the second group of bit lines are selected in parallel. A reference potential is supplied to at least one of the first non-selected bit lines adjacent to the first selected bit line selected from the first group of bit lines, and to at least one of the second non-selected bit lines adjacent to the second selected bit line selected from the first group of bit lines. At least one of remaining ones of the first and second non-selected bit lines is set into a floating state.
摘要翻译：半导体器件包括：第一读/写放大器; 第二读/写放大器; 属于第一读/写放大器的第一组位线; 属于第二读/写放大器的第二组位线，并与第一组位线混合。第一组位线之一和第二组位线之一并行选择。将参考电位提供给与从第一组位线选择的第一选定位线相邻的第一非选择位线中的至少一个以及与第二组相邻的第二非选择位线中的至少一个从第一组位线选择的选定位线。将第一和第二未选择位线中的剩余的位中的至少一个设置为浮置状态。

42. 发明授权

US07556704B2 Pneumatic tire and manufacturing method thereof 有权
标题翻译：气动轮胎及其制造方法
公开(公告)号：US07556704B2
公开(公告)日：2009-07-07
申请号：US10806209
申请日：2004-03-23
申请人： Shuichi Tsukada , Hiroshi Yamauchi , Yasuji Akiyoshi
发明人： Shuichi Tsukada , Hiroshi Yamauchi , Yasuji Akiyoshi
IPC分类号： B29D30/00 , B60C15/00
CPC分类号： B29D30/0681 , B29D2030/0682 , B60C3/00 , B60C15/024 , B60C19/00 , B60C19/002 , Y10T152/10495 , Y10T152/10819
摘要： A method for manufacturing a pneumatic tire, including the steps of intermittently crimping volume adjusting members on both side sections of a sheet inner liner material in a longitudinal direction thereof beforehand, winding the inner liner material on an outer peripheral side of a forming drum, winding a sheet carcass material on an outer peripheral side of the inner liner material, forming an unvulcanized tire containing the inner liner material and the carcass material, and vulcanizing the unvulcanized tire. The volume adjusting members are intermittently arranged in a tire circumferential direction between the inner liner material and the carcass material.
摘要翻译：一种充气轮胎的制造方法，其特征在于，包括以下步骤：预先在片材内衬材料的两个侧面上间歇地卷曲体积调节构件，将内衬材料卷绕在成形滚筒的外周侧，卷绕在内衬材料的外周侧形成片状胎体材料，形成含有内衬材料和胎体材料的未硫化轮胎，硫化未硫化轮胎。体积调节构件在轮胎周向上间歇地布置在内衬材料和胎体材料之间。

43. 发明申请

US20080211528A1 Inspection contact structure and probe card 有权
标题翻译：检查接触结构和探针卡
公开(公告)号：US20080211528A1
公开(公告)日：2008-09-04
申请号：US11819273
申请日：2007-06-26
申请人： Takashi Amemiya , Shuichi Tsukada
发明人： Takashi Amemiya , Shuichi Tsukada
IPC分类号： G01R31/02 , H01R12/00
CPC分类号： H01R13/2464 , G01R1/07314 , G01R1/0735 , H01R2201/20
摘要： In the present invention, an inspection contact structure is attached to the lower surface side of a circuit board in a probe card. In the inspection contact structure, elastic sheets with protruding conductive portions are respectively attached to both surfaces of a silicone substrate. The silicone substrate is formed with current-carrying paths passing therethrough in the vertical direction, and the sheet conductive portions are in contact with the current-carrying paths from above and below. The conductive portions on the upper side are in contact with connecting terminals of the circuit board. At the time of inspection of electric properties of a wafer, electrode pads on the wafer are pressed against the conductive portions on the lower side and thereby brought into contact with them.
摘要翻译：在本发明中，在探针卡的电路基板的下表面侧安装有检查接触结构。在检查接触结构中，具有突出导电部分的弹性片分别安装在硅树脂基底的两个表面上。硅基板在垂直方向上形成有通过其的通电路径，并且片状导电部分从上方和下方与导流路径接触。上侧的导电部与电路基板的连接端子接触。在检查晶片的电性的时候，晶片上的电极焊盘被压在下侧的导电部分上，从而与它们接触。

44. 发明授权

US07362636B2 Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：US07362636B2
公开(公告)日：2008-04-22
申请号：US11516701
申请日：2006-09-07
申请人： Shuichi Tsukada
发明人： Shuichi Tsukada
IPC分类号： G11C7/00
CPC分类号： G11C11/4091 , G11C5/146 , G11C7/065 , G11C11/4074 , G11C2207/065
摘要： A semiconductor memory device comprising: a sense amplifier which includes a pair of first NMOS transistors and a pair of PMOS transistors connected to a bit line pair as a complementary pair; a back bias generating circuit which generates a back bias voltage to be applied to the first NMOS transistors in a state in which a predetermined current is flowing through a second NMOS transistor having approximately the same operating characteristic as that of the first NMOS transistors, and performs a feedback control in response to a threshold voltage of the second NMOS transistor; and control means which performs control in a sensing operation of the sense amplifier such that the pair of first NMOS transistors operates previously and after a lapse of a predetermined time the pair of first PMOS transistors operates.
摘要翻译：一种半导体存储器件，包括：读出放大器，包括一对第一NMOS晶体管和连接到位线对作为互补对的一对PMOS晶体管; 背偏置产生电路，其在预定电流流过具有与第一NMOS晶体管的工作特性大致相同的第二NMOS晶体管的状态下产生要施加到第一NMOS晶体管的反向偏置电压，并执行响应于所述第二NMOS晶体管的阈值电压的反馈控制; 以及控制装置，其在感测放大器的感测操作中执行控制，使得该对第一NMOS晶体管先前工作，并且在该对第一PMOS晶体管工作之后经过预定时间。

45. 发明授权

US07224186B2 Semiconductor circuit device 有权
标题翻译：半导体电路器件
公开(公告)号：US07224186B2
公开(公告)日：2007-05-29
申请号：US11060391
申请日：2005-02-17
申请人： Shuichi Tsukada
发明人： Shuichi Tsukada
IPC分类号： H03K19/0175
CPC分类号： H03K19/018521 , H03K19/0013 , H03K19/0027 , H03K19/01707
摘要： The present invention relates to a semiconductor circuit device including a logic circuit and a signal line driving circuit. The logic circuit is operated at high supply voltage and outputs a signal with a high voltage amplitude. The signal line driving circuit receives a lower supply voltage and has a low-threshold transistor. With the above configuration, a signal can be transmitted at a high speed with a low voltage amplitude and low power consumption. Thus, the semiconductor circuit device including the signal line driving circuit can reduce operating current and can be operated with a low amplitude and low standby current at a high speed.
摘要翻译：本发明涉及包括逻辑电路和信号线驱动电路的半导体电路器件。逻辑电路在高电源电压下运行，并输出高电压幅度的信号。信号线驱动电路接收较低的电源电压并具有低阈值晶体管。利用上述配置，可以以低电压振幅和低功耗的高速传输信号。因此，包括信号线驱动电路的半导体电路装置能够降低工作电流，能够以低振幅和低待机电流高速运转。

46. 发明申请

US20050190591A1 Dynamic semiconductor memory device 有权
标题翻译：动态半导体存储器件
公开(公告)号：US20050190591A1
公开(公告)日：2005-09-01
申请号：US11064837
申请日：2005-02-25
申请人： Shuichi Tsukada
发明人： Shuichi Tsukada
IPC分类号： G11C11/409 , G11C7/00 , G11C7/02 , G11C7/12 , G11C11/24 , G11C11/401 , G11C11/4078 , G11C11/4094 , G11C29/00
CPC分类号： G11C7/12 , G11C7/02 , G11C11/4094 , G11C29/83 , G11C2207/2227
摘要： To provide a dynamic semiconductor memory device wherein it is possible to perform a reliable redundancy relief with a small layout area and high redundancy relieving rate while properly dealing with the standby current fault caused by a short-circuit defect between a bit line and word line. A common current-limiting element is provided for an equalizer circuit for a bit line pair on one side and another equalizer circuit for another bit line pair on the other side in a shared sense amplifier, and a bit line precharge potential is supplied to the equalizer circuits on the both sides through the current-limiting element.
摘要翻译：提供一种动态半导体存储器件，其中可以在正确处理由位线和字线之间的短路缺陷引起的待机电流故障的同时，以小的布局面积和高的冗余缓解率执行可靠的冗余度。一个公共限流元件用于位于一侧的位线对的均衡器电路和用于共享读出放大器另一侧的另一个位线对的另一个均衡器电路，位线预充电电位被提供给均衡器两侧的电路通过限流元件。

47. 发明授权

US5458526A Method of slicing a semiconductor wafer and an apparatus 失效
标题翻译：切割半导体晶片和设备的方法
公开(公告)号：US5458526A
公开(公告)日：1995-10-17
申请号：US65755
申请日：1993-05-24
申请人： Shuichi Tsukada , Takeshi Doi
发明人： Shuichi Tsukada , Takeshi Doi
IPC分类号： B24B27/06 , B23D59/00 , B28D5/02 , H01L21/304 , B24B49/10 , B24B49/08
CPC分类号： B23D59/002 , B28D5/028
摘要： The present invention aims at proposing a method of slicing a semiconductor wafer and an apparatus therefor which can manufacture a bowl-shaped wafer. When the blade displacement is detected with the sensor 32, the displacement value of the blade 14 to the outer peripheral edge of the ingot 18 is obtained by the control unit 26. The air pad 30 is moved under controlling the air pressure control device 36 by the control unit 26 to make the blade displacement at the outer peripheral edge zero. As a result of this, the displacement of the wafer at the outer peripheral edge becomes zero, so that a bowl-shaped wafer can be manufactured.
摘要翻译：本发明的目的在于提出一种可制造碗形晶片的半导体晶片的切片方法及其装置。当利用传感器32检测到叶片位移时，通过控制单元26获得叶片14相对于锭18的外周边缘的位移值。气垫30在气压控制装置36的控制下移动控制单元26使刀片在外周边缘处的位移为零。结果，晶片在外周缘处的位移变为零，从而可以制造碗形晶片。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式