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    • 41. 发明授权
    • Cartridge library apparatus having an inner door to close an opening of the apparatus body
    • 墨盒库设备具有内门以封闭设备主体的开口
    • US06614619B1
    • 2003-09-02
    • US09504583
    • 2000-02-15
    • Tsutomu Satoh
    • Tsutomu Satoh
    • G11B1568
    • G11B33/027G11B15/68G11B17/22
    • A cartridge library apparatus comprises door 3 provided openably to an opening portion formed in apparatus body B and having a plurality of cells 4 for housing cartridges in its inner surface, inner door 1 provided movably in the apparatus body for opening and closing the opening portion of apparatus body B, and a motion converting mechanism (2, 5, 6 and 11) for driving the opening and closing of the inner door interlocking with opening and closing operations of the door between inner door 1 and door 3. When the door is pivotally moved in an opening direction, the motion converting mechanism causes the inner door to close the opening portion. When door 3 is pivotally moved in a closing direction, inner door 1 is moved to cause the opening portion to be opened.
    • 盒式库装置包括可开启地设置在设备主体B中的开口部分的门3,并且具有多个用于在其内表面容纳盒的单元4,内门1可移动地设置在设备主体中,用于打开和关闭 装置主体B和用于驱动内门打开和关闭的运动转换机构(2,5,6和11),其与内门1和门3之间的门的打开和关闭操作互锁。当门枢转 在打开方向上移动,运动转换机构使内门关闭开口部。 当门3沿关闭方向枢转运动时,内门1移动以使开口部分打开。
    • 43. 发明授权
    • Method for fabricating silicon semiconductor discrete wafer
    • 制造硅半导体分立晶片的方法
    • US6066562A
    • 2000-05-23
    • US898550
    • 1997-07-22
    • Hisashi OhshimaTsutomu Satoh
    • Hisashi OhshimaTsutomu Satoh
    • B24B7/22B24B37/04B28D5/02H01L21/02H01L21/304H01L21/306H01L21/302B24B53/00
    • H01L21/02013B24B37/04B24B7/228B28D5/028H01L21/306
    • A method of fabricating a silicon semiconductor discrete wafer is disclosed that assures excellent finishing accuracy and productivity. The method for fabricating a discrete wafer having a double-layer structure including an impurity diffused layer at one side and an impurity non-diffused layer at the opposite side includes cutting a wafer, having one of the impurity diffused layers formed on both surfaces of the silicon semiconductor wafer and having an oxide film formed on the surface of the diffused layer, into two pieces at the center of thickness with an ID saw slicing machine. Then, both surfaces of the cutting surface are ground to a predetermined thickness with a surface grinding machine, and the grinding surfaces are lapped with abrasive grains having a count of at least #2000 and no more than #6000. The processing surface is wet-etched as the final processing.
    • 公开了一种制造硅半导体分立晶片的方法,其确保优异的精加工精度和生产率。 用于制造具有包括一侧的杂质扩散层和相对侧的杂质非扩散层的双层结构的分立晶片的方法包括:切割晶片,其中形成有在两个表面上的杂质扩散层之一 硅半导体晶片,并且在扩散层的表面上形成具有ID锯切机的厚度中心的两片。 然后,利用表面研磨机将切割面的两面研磨成规定的厚度,研磨表面用至少#2000且不超过#6000的磨粒研磨。 作为最终处理,将处理表面湿式蚀刻。