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    • 42. 发明申请
    • LIGHT EMITTING DIODE
    • 发光二极管
    • US20130328082A1
    • 2013-12-12
    • US13729506
    • 2012-12-28
    • TSINGHUA UNIVERSITYHON HAI PRECISION INDUSTRY CO., LTD.
    • JUN ZHUHAO-SU ZHANGQUN-QING LIGUO-FAN JINSHOU-SHAN FAN
    • H01L33/58
    • H01L33/58H01L33/04H01L33/22H01L33/44H01L2933/0091
    • A light emitting diode includes a substrate, a source layer, a metallic plasma generating layer, a first optical symmetric layer, a second optical symmetric layer, a first electrode, and a second electrode. The source layer includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked on a surface of the substrate in series. The first electrode is electrically connected with the first semiconductor layer. The second electrode is electrically connected with the second semiconductor layer. The metallic plasma generating layer is disposed on a surface of the source layer away from the substrate. The first optical symmetric layer is disposed on a surface of the metallic plasma generating layer away from the substrate. The second optical symmetric layer is disposed on a surface of the first optical symmetric layer away from the substrate.
    • 发光二极管包括基板,源极层,金属等离子体产生层,第一光学对称层,第二光学对称层,第一电极和第二电极。 源极层包括层叠在基板的表面上的第一半导体层,有源层和第二半导体层。 第一电极与第一半导体层电连接。 第二电极与第二半导体层电连接。 金属等离子体产生层设置在远离基板的源极层的表面上。 第一光学对称层设置在远离基板的金属等离子体产生层的表面上。 第二光学对称层设置在远离基板的第一光学对称层的表面上。
    • 43. 发明申请
    • LIGHT EMITTING DIODE
    • 发光二极管
    • US20130328081A1
    • 2013-12-12
    • US13729351
    • 2012-12-28
    • TSINGHUA UNIVERSITYHON HAI PRECISION INDUSTRY CO., LTD.
    • HAO-SU ZHANGJUN ZHUQUN-QING LIGUO-FAN JINSHOU-SHAN FAN
    • H01L33/36
    • H01L33/36H01L33/22H01L33/44H01L2933/0091
    • A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a third optical symmetric layer, a metallic layer, a fourth optical symmetric layer, and a first optical symmetric layer, and a second optical symmetric layer stacked with other in the listed sequence. The light emitting diode further includes a first electrode electrically connected with the first semiconductor layer and a second electrode electrically connected with the second semiconductor layer. A refractive index of the third optical symmetric layer or the fourth optical symmetric layer is in a range from about 1.2 to about 1.5. A refractive index difference between the source layer and the first optical symmetric layer is less than or equal to 0.3. A refractive difference between the second optical symmetric layer and the substrate is less than or equal to 0.1.
    • 发光二极管包括基板,第一半导体层,有源层,第二半导体层,第三光对称层,金属层,第四光对称层和第一光对称层,以及第二光对称层 层与列出的序列中的其他层堆叠。 发光二极管还包括与第一半导体层电连接的第一电极和与第二半导体层电连接的第二电极。 第三光学对称层或第四光学对称层的折射率在约1.2至约1.5的范围内。 源极层与第一光学对称层之间的折射率差小于或等于0.3。 第二光学对称层与基板之间的折射差小于或等于0.1。