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    • 46. 发明授权
    • Solid image pickup apparatus
    • 固体摄像装置
    • US09509890B2
    • 2016-11-29
    • US13032839
    • 2011-02-23
    • Takashi Nakayama
    • Takashi Nakayama
    • H04N5/335H04N5/225A61B1/05
    • H04N5/2254A61B1/051
    • A solid image pickup apparatus according to an embodiment includes: a device chip including a first principal surface and a second principal surface, a CMOS device and an electrode portion being formed on the first principal surface; a holding block including a joining surface joined to the second principal surface and an inclined surface inclined inward at a predetermined angle relative to the joining surface; a wiring board including a distal end portion including a connection portion connected to the electrode portion on the first principal surface, an extending portion that is in contact with the inclined surface, the extending portion being joined to the inclined surface via a bonding layer; and a flexure portion flexed at the predetermined angle between the distal end portion and the extending portion.
    • 根据实施例的固体摄像装置包括:包括第一主表面和第二主表面的器件芯片,CMOS器件和形成在第一主表面上的电极部分; 保持块,其包括接合到第二主表面的接合表面和相对于接合表面以预定角度向内倾斜的倾斜表面; 布线板,其包括:具有与第一主表面上的电极部连接的连接部的前端部,与倾斜面接触的延伸部,延伸部经由接合层与倾斜面接合; 以及挠曲部分,其在所述前端部分和所述延伸部分之间以预定角度弯曲。
    • 49. 发明授权
    • Information processing device and emulation processing program and method
    • 信息处理设备和仿真处理程序及方法
    • US08984263B2
    • 2015-03-17
    • US13253640
    • 2011-10-05
    • Takashi NakayamaKazuyoshi Watanabe
    • Takashi NakayamaKazuyoshi Watanabe
    • G06F15/00G06F9/30G06F9/40G06F9/455G06F9/32G06F9/38
    • G06F9/45554G06F9/3017G06F9/32G06F9/3802
    • An emulation processing method causing a computer including a first and a second processor to execute emulation processing, the emulation processing method includes: calculate a next instruction address next to a received instruction address, and transmit, to the second processor, the calculated instruction address and instruction information read out on the basis of the calculated instruction address, transmit, to the first processor, a first instruction address that is an instruction address included in an execution result of executed processing, and execute processing based on the instruction information received from the first processor, when a second instruction address that is the instruction address received from the first processor is identical to the first instruction address, and read out instruction information on the basis of the first instruction address and execute processing based on the instruction information read out, when the second instruction address is not identical to the first instruction address.
    • 一种使包括第一处理器和第二处理器的计算机执行仿真处理的仿真处理方法,所述仿真处理方法包括:计算接收到的指令地址旁边的下一指令地址,并向所述第二处理器发送所计算的指令地址和 基于计算出的指令地址读出的指令信息,向第一处理器发送作为执行处理的执行结果中包含的指令地址的第一指令地址,并且基于从第一执行结果接收到的指令信息执行处理 处理器,当作为从第一处理器接收的指令地址的第二指令地址与第一指令地址相同,并且基于第一指令地址读出指令信息,并且基于读出的指令信息执行处理,当 第二个指令地址不一致 al到第一个指令地址。
    • 50. 发明授权
    • Tray for CVD and method for forming film using same
    • 用于CVD的托盘和使用其形成膜的方法
    • US08685855B2
    • 2014-04-01
    • US13513610
    • 2010-11-29
    • Takashi NakayamaTomoyuki KabasawaTakayuki Kihara
    • Takashi NakayamaTomoyuki KabasawaTakayuki Kihara
    • H01L21/44B31D3/00C23C16/00
    • C23C16/4585
    • A tray for film formation by a CVD method includes a tray main body (2) and a supporting member (3) mounted on the tray main body (2) for supporting a silicon wafer (5). The supporting member (3) has a holding portion (3c), on which the silicon wafer (5) is directly placed. The holding portion (3c) has its lower surface (3d) apart from a surface (2a) of the tray main body that is opposed to and apart from the supported silicon wafer (5), whereby the thickness distribution of an oxide film formed on the silicon wafer can be made uniform. The tray has a structure for reducing a contact area between the supporting member (3) and the tray main body (2), with the holding portion (3c) having a tilted surface with its inner circumferential side closer to the tray main body surface (2a) that is opposed to the silicon wafer.
    • 用于通过CVD法成膜的托盘包括托盘主体(2)和安装在用于支撑硅晶片(5)的托盘主体(2)上的支撑构件(3)。 支撑构件(3)具有保持部(3c),硅晶片(5)直接放置在该保持部分上。 保持部(3c)的下表面(3d)与托盘主体的与支撑硅晶片(5)相对且分开的表面(2a)分开,由此形成在氧化膜上的厚度分布 可以使硅晶片均匀。 托盘具有用于减小支撑构件(3)和托盘主体(2)之间的接触面积的结构,其中保持部分(3c)具有倾斜表面,其内周侧更接近托盘主体表面( 2a),其与硅晶片相对。