会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 43. 发明授权
    • Apparatus for changing a plate cylinder in a web-fed rotary gravure press
    • 用于在卷筒纸式旋转凹版印刷机中更换印版滚筒的装置
    • US5224813A
    • 1993-07-06
    • US802134
    • 1991-12-03
    • Hiroki NakamuraToshiya SaekiHideyuki AraiSadayoshi Naito
    • Hiroki NakamuraToshiya SaekiHideyuki AraiSadayoshi Naito
    • B41F9/18B41F13/24
    • B41F9/18
    • An apparatus for changing a plate cylinder in a web-fed rotary gravure press comprises supporting mechanisms for detachably supporting both ends of a plate cylinder, a palette for carrying the plate cylinder, an elevator having a first conveying mechanism for conveying the palette in an axial direction of the plate cylinder and being vertically movable between a first position where the plate cylinder is supported by the supporting mechanism and a second position where the plate cylinder is conveyed in the axial direction by the conveying mechanism, and a truck movable in a direction perpendicular to the axial direction of the plate cylinder and having a pair of second conveying mechanisms parallel to each other for conveying the palette in the axial direction of the plate cylinder when the elevator is at the second position.
    • 用于改变卷筒纸式旋转凹版印刷机中的印版滚筒的装置包括用于可拆卸地支撑印版滚筒的两端的支撑机构,用于承载印版滚筒的调色板,具有第一传送机构的升降机,用于沿着轴向传送调色板 并且可以在印版滚筒由支撑机构支撑的第一位置和印版滚筒沿轴向方向由输送机构输送的第二位置和可沿垂直方向移动的卡盘之间垂直移动; 并且具有彼此平行的一对第二输送机构,用于当电梯处于第二位置时沿着印版滚筒的轴向方向输送调色板。
    • 45. 发明授权
    • Method of producing a solid-state image sensing device including solid-state image sensor having a pillar-shaped semiconductor layer
    • 制造具有柱状半导体层的固态图像传感器的固体摄像装置的制造方法
    • US08664032B2
    • 2014-03-04
    • US13101833
    • 2011-05-05
    • Fujio MasuokaHiroki Nakamura
    • Fujio MasuokaHiroki Nakamura
    • H01L31/18
    • H01L27/14812H01L27/14837H01L31/035281H01L31/03529Y02E10/50
    • It is an object to provide a CCD solid-state image sensor, in which an area of a read channel is reduced and a rate of a surface area of a light receiving portion (photodiode) to an area of one pixel is increased. There is provided a solid-state image sensor, including: a first conductive type semiconductor layer; a first conductive type pillar-shaped semiconductor layer formed on the first conductive type semiconductor layer; a second conductive type photoelectric conversion region formed on the top of the first conductive type pillar-shaped semiconductor layer, an electric charge amount of the photoelectric conversion region being changed by light; and a high-concentrated impurity region of the first conductive type formed on a surface of the second conductive type photoelectric conversion region, the impurity region being spaced apart from a top end of the first conductive type pillar-shaped semiconductor layer by a predetermined distance, wherein a transfer electrode is formed on the side of the first conductive type pillar-shaped semiconductor layer via a gate insulating film, a second conductive type CCD channel region is formed below the transfer electrode, and a read channel is formed in a region between the second conductive type photoelectric conversion region and the second conductive type CCD channel region.
    • 本发明的目的是提供一种CCD固态图像传感器,其中读取通道的面积减小,并且光接收部分(光电二极管)到一个像素的区域的表面积的比率增加。 提供了一种固态图像传感器,包括:第一导电型半导体层; 形成在第一导电型半导体层上的第一导电型柱状半导体层; 第二导电型光电转换区,形成在第一导电型柱状半导体层的顶部,光电转换区域的电荷量由光改变; 以及形成在所述第二导电型光电转换区域的表面上的所述第一导电类型的高浓度杂质区域,所述杂质区域与所述第一导电型柱状半导体层的顶端隔开预定距离, 其中,在所述第一导电型柱状半导体层的侧面经由栅极绝缘膜形成有转印电极,在所述转印电极的下方形成第二导电型CCD沟道区,在所述第二导电型柱状半导体层之间的区域形成读取沟道 第二导电型光电转换区域和第二导电型CCD沟道区域。
    • 46. 发明授权
    • Semiconductor device and production method therefor
    • 半导体装置及其制造方法
    • US08642426B2
    • 2014-02-04
    • US13534615
    • 2012-06-27
    • Fujio MasuokaHiroki Nakamura
    • Fujio MasuokaHiroki Nakamura
    • H01L21/336H01L21/8238H01L21/8249H01L21/31H01L21/469
    • H01L27/092H01L21/823828H01L21/823878H01L21/823885H01L21/84H01L27/1203H01L29/78642
    • It is an object to allow an inverter to be made up using a single island-shaped semiconductor, so as to provide a semiconductor device comprising a highly-integrated SGT-based CMOS inverter circuit. The object is achieved by a semiconductor device which comprises an island-shaped semiconductor layer, a first gate dielectric film surrounding a periphery of the island-shaped semiconductor layer, a gate electrode surrounding a periphery of the first gate dielectric film, a second gate dielectric film surrounding a periphery of the gate electrode, a tubular semiconductor layer surrounding a periphery of the second gate dielectric film, a first first-conductive-type high-concentration semiconductor layer disposed on top of the island-shaped semiconductor layer, a second first-conductive-type high-concentration semiconductor layer disposed underneath the island-shaped semiconductor layer, a first second-conductive-type high-concentration semiconductor layer disposed on top of the tubular semiconductor layer, and a second second-conductive-type high-concentration semiconductor layer disposed underneath the tubular semiconductor layer.
    • 本发明的目的是允许使用单个岛状半导体构成逆变器,以提供包括高度集成的基于SGT的CMOS反相器电路的半导体器件。 该目的通过一种半导体器件实现,该半导体器件包括岛状半导体层,围绕岛状半导体层的周围的第一栅极电介质膜,围绕第一栅极电介质膜周围的栅电极,第二栅极电介质 围绕所述栅电极的周围的薄膜,围绕所述第二栅极电介质膜的周围的管状半导体层,设置在所述岛状半导体层的顶部的第一第一导电型高浓度半导体层, 布置在岛状半导体层下方的导电型高浓度半导体层,设置在管状半导体层顶部的第一第二导电型高浓度半导体层和第二第二导电型高浓度半导体层 层设置在管状半导体层下方。
    • 48. 发明授权
    • Gaming machine and control method thereof
    • 游戏机及其控制方法
    • US08382576B2
    • 2013-02-26
    • US12944389
    • 2010-11-11
    • Hiroki Nakamura
    • Hiroki Nakamura
    • A63F9/24
    • G07F17/3267G07F17/32G07F17/3209G07F17/3244G07F17/3262G07F17/3288
    • To provide a gaming machine and a control method therefor, having a new entertainment characteristics, a slot machine 10 of the present invention, when a “BONUS” symbol 250 associated with a pick-up bonus game is selected, receives selection of any one of twenty little pig's noses 210 displayed. Then, a benefit associated with the selected little pig's nose 210 is awarded. When the benefit to be awarded is a “stick house” 218 which means “step-up”, a step-up occurs to the stick house stage and the expectation value for a payout is raised. Thus, when one little pig's nose 210 is selected out of the twenty little pig's noses 210 displayed in the stick house stage, the payout amount of the benefit associated with the little pig's nose 210 is increased.
    • 为了提供具有新的娱乐特征的游戏机及其控制方法,本发明的老虎机10当选择与拾取奖励游戏相关联的奖励符号250时,接收二十个中的任一个的选择 显示猪的鼻子210。 然后,授予与所选小猪鼻子210相关的益处。 当被授予的利益是一个意味着升级的棍棒218时,棍棒屋阶段发生升压,提高了支付的期望值。 因此,当从出现在棒房阶段的二十只小猪的鼻子210中选出一只小猪的鼻子210时,与小猪鼻子210相关联的利益的支付量增加。
    • 49. 发明授权
    • Solid-state imaging device
    • 固态成像装置
    • US08330089B2
    • 2012-12-11
    • US12700294
    • 2010-02-04
    • Fujio MasuokaHiroki Nakamura
    • Fujio MasuokaHiroki Nakamura
    • H01L27/00H01L31/00
    • H01L27/14603H01L27/14609H01L27/14612H01L27/14689
    • It is intended to provide a CMOS image sensor with a high degree of pixel integration. A solid-state imaging device comprises a signal line formed on a Si substrate, an island-shaped semiconductor formed on the signal line, and a pixel selection line. The island-shaped semiconductor includes: a first semiconductor layer connected to the signal line; a second semiconductor layer located above and adjacent to the first semiconductor layer; a gate connected to the second semiconductor layer through an insulating film; and a charge storage section comprised of a third semiconductor layer connected to the second semiconductor layer and adapted, in response to receiving light, to undergo a change in amount of electric charges therein; a fourth semiconductor layer located above and adjacent to the second and third semiconductor layers. The pixel selection line is connected to the fourth semiconductor layer formed as a top portion of the island-shaped semiconductor.
    • 旨在提供具有高度像素集成度的CMOS图像传感器。 固态成像装置包括形成在Si衬底上的信号线,形成在信号线上的岛状半导体和像素选择线。 岛状半导体包括:连接到信号线的第一半导体层; 位于第一半导体层上方并与其相邻的第二半导体层; 通过绝缘膜与第二半导体层连接的栅极; 以及电荷存储部,包括连接到所述第二半导体层并且响应于接收光而适应于其中的电荷量的变化的第三半导体层; 位于第二和第三半导体层上方并与其相邻的第四半导体层。 像素选择线连接到形成为岛状半导体的顶部的第四半导体层。
    • 50. 发明申请
    • SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME
    • 半导体器件及其制造方法
    • US20120299068A1
    • 2012-11-29
    • US13478359
    • 2012-05-23
    • Fujio MasuokaShintaro AraiHiroki NakamuraTomohiko Kudo
    • Fujio MasuokaShintaro AraiHiroki NakamuraTomohiko Kudo
    • H01L29/78
    • H01L29/78642H01L29/42392H01L29/66772
    • It is an object to provide an SGT production method capable of obtaining a structure for reducing a resistance of a gate, a desired gate length, desired source and drain configurations and a desired diameter of a pillar-shaped semiconductor. The object is achieved by a semiconductor device production method which comprises the steps of: forming a pillar-shaped first-conductive-type semiconductor layer; forming a second-conductive-type semiconductor layer underneath the pillar-shaped first-conductive-type semiconductor layer; forming a gate dielectric film and a gate electrode around the pillar-shaped first-conductive-type semiconductor layer; forming a sidewall-shaped dielectric film on an upper region of a sidewall of the pillar-shaped first-conductive-type semiconductor layer and in contact with a top of the gate; forming a sidewall-shaped dielectric film on a sidewall of the gate; and forming a second-conductive-type semiconductor layer in an upper portion of the pillar-shaped first-conductive-type semiconductor layer and on the second-conductive-type semiconductor layer formed underneath the pillar-shaped first-conductive-type semiconductor layer.
    • 本发明的目的是提供一种能够获得用于降低栅极的电阻,期望的栅极长度,期望的源极和漏极配置以及柱状半导体的期望直径的结构的SGT制造方法。 该目的通过一种半导体器件制造方法来实现,该方法包括以下步骤:形成柱状的第一导电型半导体层; 在所述柱状第一导电型半导体层的下方形成第二导电型半导体层; 在柱状第一导电型半导体层周围形成栅极电介质膜和栅电极; 在所述柱状第一导电型半导体层的侧壁的上部区域上形成与所述栅极的顶部接触的侧壁状的电介质膜; 在所述浇口的侧壁上形成侧壁状的电介质膜; 以及在柱状第一导电型半导体层的上部和形成在柱状的第一导电型半导体层下方的第二导电型半导体层上形成第二导电型半导体层。