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41. 发明授权

US07296939B2 Laser module with sealed package containing limited optical components 有权
标题翻译：具有密封包装的激光模块，包含有限的光学元件
公开(公告)号：US07296939B2
公开(公告)日：2007-11-20
申请号：US11188648
申请日：2005-07-26
申请人： Shinichiro Sonoda , Kazuhiko Nagano , Hideo Miura
发明人： Shinichiro Sonoda , Kazuhiko Nagano , Hideo Miura
IPC分类号： G02B6/36
CPC分类号： G02B6/4204 , G02B6/4248
摘要： A laser module includes: one or more semiconductor laser elements which emit one or more divergent laser beams; one or more collimator lenses which collimate the one or more divergent laser beams; a condensing lens which condenses the one or more collimated laser beams, and make the one or more collimated laser beams converge at a convergence position; an optical fiber which is arranged in such a manner that the convergence position is located on the light-entrance end face; and a package which contains the one or more semiconductor laser elements and the one or more collimator lenses, does not contain the condensing lens and the light-entrance end face, and is hermetically sealed.
摘要翻译：激光模块包括：发射一个或多个发散激光束的一个或多个半导体激光元件; 一个或多个准直透镜，其准直一个或多个发散激光束; 聚光透镜，其使所述一个或多个准直激光束聚光，并使所述一个或多个准直激光束会聚在会聚位置; 光纤，其以会聚位置位于光入射端面上的方式配置; 以及包含所述一个以上的半导体激光元件和所述一个以上的准直透镜的封装，不包含所述聚光透镜和所述光入射端面，并且被密封。

42. 发明申请

US20070187823A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20070187823A1
公开(公告)日：2007-08-16
申请号：US11783983
申请日：2007-04-13
申请人： Naotaka Tanaka , Tomio Iwasaki , Hideo Miura , Yasuyuki Nakajima , Tomoo Matsuzawa
发明人： Naotaka Tanaka , Tomio Iwasaki , Hideo Miura , Yasuyuki Nakajima , Tomoo Matsuzawa
IPC分类号： H01L23/48
CPC分类号： H01L23/53238 , H01L21/563 , H01L23/3128 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/78 , H01L24/85 , H01L25/0657 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/05624 , H01L2224/1134 , H01L2224/13144 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/45015 , H01L2224/45144 , H01L2224/4807 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48453 , H01L2224/48465 , H01L2224/4851 , H01L2224/48624 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/78301 , H01L2224/85045 , H01L2224/85205 , H01L2225/06558 , H01L2225/06568 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01105 , H01L2924/014 , H01L2924/04941 , H01L2924/05042 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/19043 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20303 , H01L2924/20304 , H01L2924/20305 , H01L2924/20751 , H01L2924/00014 , H01L2224/13099 , H01L2924/00 , H01L2924/00012 , H01L2924/00011 , H01L2924/00015
摘要： An object of the present invention is to establish, for an LSI having a stacked interconnection structure of Cu interconnect/Low-k material, a narrow pitch wire bonding technique enabling a reduction in damage to a bonding pad and application similar to the conventional LSI of an aluminum interconnection. In a semiconductor device having a multilayer interconnection made of a Cu interconnect/Low-k dielectric material, the above-described object can be attained by a bonding pad structure in which all the wiring layers up to the uppermost cap interconnect are formed of a Cu wiring layer and a bonding pad portion formed of a Cu layer is equipped with a refractory intermediate metal layer such as Ti (titanium) filmor (tungsten) film on the Cu layer and an aluminum alloy layer on the intermediate metal layer.
摘要翻译：本发明的目的在于，对于具有Cu互连/ Low-k材料的堆叠互连结构的LSI，可以实现能够减少对焊盘的损伤的窄间距引线接合技术和类似于传统LSI的铝互连。在具有由Cu互连/ Low-k电介质材料制成的多层互连的半导体器件中，上述目的可以通过一种焊盘结构来实现，其中所有的布线层直到最上盖互连件都是由Cu 布线层和由Cu层形成的接合焊盘部分在Cu层上装有诸如Ti（钛）膜（钨）的耐火材料中间金属层和中间金属层上的铝合金层。

43. 发明授权

US07226222B2 Laser module with sealed packages having reduced total volume 有权
标题翻译：具有密封包装的激光模块，总体积减小
公开(公告)号：US07226222B2
公开(公告)日：2007-06-05
申请号：US11197592
申请日：2005-08-05
申请人： Kazuhiko Nagano , Hideo Miura , Shinichiro Sonoda
发明人： Kazuhiko Nagano , Hideo Miura , Shinichiro Sonoda
IPC分类号： G02B6/36
CPC分类号： G02B6/4248 , G02B6/3897 , G02B6/4249 , G02B6/4292
摘要： In a laser module in which laser beams emitted from semiconductor laser elements are collimated by collimator lenses, and condensed by an optical condensing system so that the laser beams converge at a light-entrance end face of an optical fiber. The semiconductor laser elements and the collimator lenses are contained in a hermetically sealed, first package which includes a front wall having a window arranged for passage of the laser beams, and a portion of the optical condensing system and the light-entrance end face are contained in a hermetically sealed, second package which is fixed to the front wall. The cross section of the second package perpendicular to the optical axis of the optical fiber at the light-entrance end face is smaller than the cross section of the first package parallel to the cross section of the second package.
摘要翻译：在从半导体激光元件射出的激光束通过准直透镜准直的激光模块中，通过光聚光系统进行聚光，使得激光束会聚在光纤的光入射端面。半导体激光元件和准直透镜被包含在气密密封的第一封装中，该封装包括具有布置成用于激光束通过的窗口的前壁，并且包含光聚光系统和光入射端面的一部分在密封的第二包装中，其被固定到前壁。在光入射端面处垂直于光纤的光轴的第二封装的横截面小于与第二封装的横截面平行的第一封装的横截面。

44. 发明申请

US20070096189A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20070096189A1
公开(公告)日：2007-05-03
申请号：US11594780
申请日：2006-11-09
申请人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
发明人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
IPC分类号： H01L29/94 , H01L21/8242
CPC分类号： H01L29/517 , H01L21/28185 , H01L21/28194 , H01L21/31604 , H01L27/10814 , H01L28/40 , H01L28/60 , H01L29/513
摘要： In order to supply a semiconductor device having high-reliability, there are used a first capacitor electrode, a capacitor insulating film formed in contact with the first capacitor electrode and mainly composed of titanium oxide, and a second capacitor electrode formed in contact with the capacitor insulating film, and there is used a conductive oxide film mainly composed of ruthenium oxide or iridium oxide for the first capacitor electrode and the second capacitor electrode. Alternatively, there is used a gate insulating film having a titanium silicate film and titanium oxide which suppress leakage current.
摘要翻译：为了提供具有高可靠性的半导体器件，使用第一电容器电极，形成为与第一电容器电极接触并主要由氧化钛构成的电容器绝缘膜，以及形成为与电容器接触的第二电容器电极并且使用主要由氧化钌或氧化铱构成的导电氧化物膜用于第一电容器电极和第二电容器电极。或者，使用具有抑制漏电流的钛硅酸盐膜和氧化钛的栅极绝缘膜。

45. 发明授权

US06960832B2 Semiconductor device and its production process 失效
标题翻译：半导体器件及其生产工艺
公开(公告)号：US06960832B2
公开(公告)日：2005-11-01
申请号：US10761333
申请日：2004-01-22
申请人： Hiromi Shimazu , Tomio Iwasaki , Hiroyuki Ohta , Hideo Miura , Shuji Ikeda
发明人： Hiromi Shimazu , Tomio Iwasaki , Hiroyuki Ohta , Hideo Miura , Shuji Ikeda
IPC分类号： H01L21/285 , H01L21/336 , H01L21/768 , H01L23/12 , H01L21/00
CPC分类号： H01L29/665 , H01L21/28518 , H01L21/76877
摘要： In a semiconductor device having a cobalt silicide film, at least nickel or iron is contained in the cobalt silicide film for preventing the rise of resistance incidental to thinning of the film.
摘要翻译：在具有钴硅化物膜的半导体器件中，钴硅化物膜中至少含有镍或铁，以防止附着于薄膜变薄的电阻上升。

46. 发明申请

US20050196935A1 Semiconductor device and process for producing the same 有权
公开(公告)号：US20050196935A1
公开(公告)日：2005-09-08
申请号：US11108827
申请日：2005-04-19
申请人： Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Norio Suzuki , Yasushi Matsuda , Yasuko Yoshida , Hirohiko Yamamoto , Masamichi Kobayashi , Akira Takamatsu , Hirofumi Shimizu , Kazushi Fukuda , Shinichi Horibe , Toshio Nozoe
发明人： Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Norio Suzuki , Yasushi Matsuda , Yasuko Yoshida , Hirohiko Yamamoto , Masamichi Kobayashi , Akira Takamatsu , Hirofumi Shimizu , Kazushi Fukuda , Shinichi Horibe , Toshio Nozoe
IPC分类号： H01L21/31 , H01L21/76 , H01L21/762
CPC分类号： H01L21/76232 , H01L21/76235 , H01L29/78
摘要： A process of producing a semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step. The device is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.

47. 发明授权

US06907059B1 Optical component fixing method and optical component support 失效
标题翻译：光学部件固定方法和光学部件支撑
公开(公告)号：US06907059B1
公开(公告)日：2005-06-14
申请号：US09534034
申请日：2000-03-24
申请人： Hideo Miura , Kazumi Kubo
发明人： Hideo Miura , Kazumi Kubo
IPC分类号： G02B7/00 , H01S3/02 , H01S3/08 , B32B17/00 , B32B31/00 , C03C27/00
CPC分类号： H01S3/025 , H01S3/0401 , H01S3/0405 , H01S3/042 , H01S3/09415 , Y10T156/1064
摘要： A method of fixing an optical component includes the steps of scoring a surface of a support, bringing an optical component into close contact with the scored surface of the support, and flowing a fluid adhesive along kerfs produced by the scoring. An optical component support has a surface provided with scoring kerts for fixing the optical component. The method and support enable fixing of an optical component by a thin, uniform adhesive layer, without fine polishing of the optical component and the surface of the support.
摘要翻译：固定光学部件的方法包括以下步骤：对支撑体的表面进行刻痕，使光学部件与支撑体的刻痕表面紧密接触，并且使流体粘合剂沿着由刻痕产生的切口流动。光学部件支撑件具有设置有用于固定光学部件的刻痕警报器的表面。该方法和支持使得能够通过薄的均匀的粘合剂层固定光学部件，而不会精细地抛光光学部件和支撑体的表面。

48. 发明授权

US06881646B2 Semiconductor device and process for producing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06881646B2
公开(公告)日：2005-04-19
申请号：US10392916
申请日：2003-03-21
申请人： Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Norio Suzuki , Yasushi Matsuda , Yasuko Yoshida , Hirohiko Yamamoto , Masamichi Kobayashi , Akira Takamatsu , Hirofumi Shimizu , Kazushi Fukuda , Shinichi Horibe , Toshio Nozoe
发明人： Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Norio Suzuki , Yasushi Matsuda , Yasuko Yoshida , Hirohiko Yamamoto , Masamichi Kobayashi , Akira Takamatsu , Hirofumi Shimizu , Kazushi Fukuda , Shinichi Horibe , Toshio Nozoe
IPC分类号： H01L21/31 , H01L21/76 , H01L21/762
CPC分类号： H01L21/76232 , H01L21/76235 , H01L29/78
摘要： A process of producing a semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step. The device is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.
摘要翻译：一种制造半导体器件的方法，该半导体器件具有高度可靠的凹槽隔离结构，其具有在凹槽上边缘处形成的所需曲率半径，并且不形成任何步骤。通过减小半导体衬底上的元件隔离槽的槽上边缘周围的应力产生，从而优化元件隔离槽的形状并使器件更精细并提高器件电气特性来制造器件。

49. 发明申请

US20050079667A1 Semiconductor device and production method therefor 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050079667A1
公开(公告)日：2005-04-14
申请号：US10503350
申请日：2003-02-05
申请人： Tomio Iwasaki , Norio Ishitsuka , Hideo Miura
发明人： Tomio Iwasaki , Norio Ishitsuka , Hideo Miura
IPC分类号： H01L21/265 , H01L21/336 , H01L21/8244 , H01L21/8247 , H01L27/11 , H01L27/115 , H01L29/49 , H01L29/78 , H01L29/788 , H01L29/792 , H01L21/425 , H01L21/8234 , H01L21/8238 , H01L29/76 , H01L29/94
CPC分类号： H01L29/6659 , H01L21/26513 , H01L29/4925 , H01L29/4983 , H01L29/7833
摘要： A semiconductor device having a high degree of reliability is provided. A second object of the invention is to provide a semiconductor device of high yield. The semiconductor includes a silicon substrate, a gate dielectric film formed on one main surface of the silicon substrate, a gate electrode formed by being stacked on the gate dielectric film and a diffusion layer containing arsenic and phosphorus. Both of the concentration of the highest concentration portion of arsenic and the concentration of the highest concentration portion of phosphorus are each at 1026 atoms/m3 or more and 1027 atoms/m3 or less, and the depth of the highest concentration portion of phosphorus from the surface of the silicon substrate is less than the depth of the highest concentration portion of arsenic.
摘要翻译：提供了具有高可靠性的半导体器件。本发明的第二个目的是提供一种高产率的半导体器件。半导体包括硅衬底，形成在硅衬底的一个主表面上的栅极电介质膜，通过层叠在栅极电介质膜上形成的栅电极和含有砷和磷的扩散层。砷的最高浓度部分的浓度和磷的最高浓度部分的浓度分别为10 26个/ m 3以上且10 27个/ m 3以下，并且来自硅衬底的表面的磷的最高浓度部分的深度小于砷的最高浓度部分的深度。

50. 发明授权

US06856021B1 Semiconductor device having aluminum alloy conductors 失效
标题翻译：具有铝合金导体的半导体器件
公开(公告)号：US06856021B1
公开(公告)日：2005-02-15
申请号：US09648455
申请日：2000-08-28
申请人： Tomio Iwasaki , Hideo Miura , Takashi Nakajima , Hiroyuki Ohta , Shinji Nishihara , Masashi Sahara
发明人： Tomio Iwasaki , Hideo Miura , Takashi Nakajima , Hiroyuki Ohta , Shinji Nishihara , Masashi Sahara
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/532
CPC分类号： H01L21/76844 , H01L21/32051 , H01L21/76843 , H01L21/7685 , H01L23/53219 , H01L23/53223 , H01L2221/1078 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device is provided which includes a semiconductor substrate, metal conductors formed on a side of a main face of the substrate, which metal conductors contain aluminum as a main constituent thereof, and copper as an additive element, the metal conductors being made to contain such an element as to suppress the precipitation of copper or being made to have such a film adjacent to the metal conductor as to suppress the precipitation of copper or being made to have such a film adjacent to the metal conductor as to suppress the precipitation of copper.
摘要翻译：提供了一种半导体器件，其包括半导体衬底，形成在衬底的主面一侧的金属导体，该金属导体以铝为主要成分，铜作为添加元素，金属导体被制成含有抑制铜的析出或使金属导体附近具有这样的膜的元素，以抑制铜的沉淀，或者使该膜与金属导体相邻，以抑制铜的析出。

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