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41. 发明授权

US5087868A Rotary actuator 失效
标题翻译：旋转执行器
公开(公告)号：US5087868A
公开(公告)日：1992-02-11
申请号：US563866
申请日：1990-08-07
申请人： Takehisa Ishibashi , Shinobu Kakizaki , Yoshiaki Watanabe , Fukashi Kanai
发明人： Takehisa Ishibashi , Shinobu Kakizaki , Yoshiaki Watanabe , Fukashi Kanai
IPC分类号： B60G17/015 , F16F9/46
CPC分类号： F16F9/462 , B60G17/0152
摘要： A rotary actuator is designed for rotatingly drive a rotary body, such as a rotary valve member for adjusting damping force to be created by a variable damping force shock absorber. The rotary actuator takes a layout of a permanent magnet and an electromagnet arranged in vertically spaced relationship. Vertical layout of the permanent magnet and the electromagnet reduces plane area required for installation.

42. 发明授权

US5071779A Method for producing a silicon thin film transistor 失效
标题翻译：生产硅薄膜晶体管的方法
公开(公告)号：US5071779A
公开(公告)日：1991-12-10
申请号：US494037
申请日：1990-03-15
申请人： Sakae Tanaka , Yoshiaki Watanabe , Katsuo Shirai , Yoshihisa Ogiwara
发明人： Sakae Tanaka , Yoshiaki Watanabe , Katsuo Shirai , Yoshihisa Ogiwara
IPC分类号： H01L21/336 , H01L29/786
CPC分类号： H01L29/66765 , H01L29/78618 , H01L29/78621 , H01L29/78624 , H01L29/7866 , H01L29/78669
摘要： A silicon thin film transistor array includes a plurality of silicon thin film transistors in an array-like form, each silicon thin film transistor including an insulating substrate, a gate electrode formed on the insulating substrate, a gate insulating layer formed on the insulating substrate containing the gate electrode, a pair of first impurity contained silicon layers formed on the gate insulating layer in such a manner as to transversely cross a terminal part of the gate electrode, an intrinsic silicon layer formed on the pair of first impurity contained silicon layers and on the gate insulating layer between the pair of first impurity contained silicon layers in such a manner as to connect the pair of first impurity contained silicon layers, a protective insulation layer formed on the intrinsic silicon layer, and a source electrode and a drain electrode formed at contact parts of the pair of first impurity contained silicon layers; gate wiring for connecting the gate electrodes of the silicon thin film transistors to each other; and source wiring for connecting the source electrodes of the silicon thin film transistors to each other.

43. 发明授权

US5045485A Method for producing amorphous silicon thin film transistor array substrate 失效
标题翻译：非晶硅薄膜晶体管阵列基板的制造方法
公开(公告)号：US5045485A
公开(公告)日：1991-09-03
申请号：US383119
申请日：1989-07-19
申请人： Sakae Tanaka , Yoshiaki Watanabe
发明人： Sakae Tanaka , Yoshiaki Watanabe
IPC分类号： H01L21/77 , H01L21/84
CPC分类号： H01L27/1214
摘要： A method for producing an amorphous silicon thin film transistor array substrate comprising successively coating a gate insulating layer, an amorphous silicon layer and a protective insulating layer on a glass substrate provided with a gate electrode and a gate wiring having a predetermined shape, in such a manner as to not cover the connecting terminal region of the gate wiring. A protective insulating layer is patterned into a predetermined shape. After passing through a predetermined production process to produce an amorphous silicon thin film transistor array, at least a gate wiring and a source wiring are provided. The step of patterning the protective insulating layer comprises covering the connecting terminals of the gate wiring and the exposed region of the glass substrate with a photoresist.

44. 发明授权

US5021850A Silicon thin film transistor 失效
标题翻译：硅薄膜晶体管
公开(公告)号：US5021850A
公开(公告)日：1991-06-04
申请号：US377873
申请日：1989-07-10
申请人： Sakae Tanaka , Yoshiaki Watanabe , Katsuo Shirai , Yoshihisa Ogiwara
发明人： Sakae Tanaka , Yoshiaki Watanabe , Katsuo Shirai , Yoshihisa Ogiwara
IPC分类号： H01L21/336 , H01L29/786
CPC分类号： H01L29/66765 , H01L29/78618 , H01L29/78621 , H01L29/78624 , H01L29/7866 , H01L29/78669
摘要： A silicon thin film transistor array includes a plurality of silicon thin film transistors in an array-like form, each silicon thin film transistor including an insulating substrate, a gate electrode formed on the insulating substrate, a gate insulating layer formed on the insulating substrate containing the gate electrode, a pair of first impurity contained silicon layers formed on the gate insulating layer in such a manner as to transversely cross a terminal part of the gate electrode, an intrinsic silicon layer formed on the pair of first impurity contained silicon layers and on the gate insulating layer between the pair of first impurity contained silicon layers in such a manner as to connect the pair of first impurity contained silicon layers, a protective insulation layer formed on the intrinsic silicon layer, and a source electrode and a drain electrode formed at contact parts of the pair of first impurity contained silicon layers; gate wiring for connecting the gate electrodes of the silicon thin film transistors to each other; and source wiring for connecting the source electrodes of the silicon thin film transistors to each other.
摘要翻译：硅薄膜晶体管阵列包括阵列状形式的多个硅薄膜晶体管，每个硅薄膜晶体管包括绝缘基板，形成在绝缘基板上的栅电极，形成在绝缘基板上的栅绝缘层，栅电极，一对第一杂质含有在栅极绝缘层上形成的跨越栅电极的端部的硅层，形成在一对第一杂质上的本征硅层含有硅层和在一对第一杂质之间的栅极绝缘层包含硅层，以便连接一对第一杂质含硅层，形成在本征硅层上的保护绝缘层，以及形成在源极电极和漏电极该对第一杂质的接触部分含有硅层; 用于将硅薄膜晶体管的栅电极彼此连接的栅极布线; 以及用于将硅薄膜晶体管的源电极彼此连接的源极布线。

45. 发明授权

US5018880A Dynamic pressure bearing device 失效
标题翻译：动压轴承装置
公开(公告)号：US5018880A
公开(公告)日：1991-05-28
申请号：US372613
申请日：1989-06-28
申请人： Mikio Nakasugi , Yoshiaki Watanabe
发明人： Mikio Nakasugi , Yoshiaki Watanabe
IPC分类号： F16C33/10
CPC分类号： F16C33/107 , F16C17/107
摘要： A dynamic pressure bearing device a relatively rotatable shaft member and sleeve member, accommodating the shaft member, are relatively supported with respect to a thrust direction and a radial direction, and wherein there is provided a circulation passageway for circulating a fluid along at least a part of a thrust surface between the shaft member and the sleeve member.
摘要翻译：容纳轴构件的相对旋转的轴构件和套筒构件的动态压力承载装置相对于推力方向和径向相对地相对地支撑，并且其中设置有循环通道，用于沿至少一部分循环流体在轴构件和套筒构件之间的推力表面。

46. 发明授权

US5005056A Amorphous-silicon thin film transistor array substrate 失效
标题翻译：非晶硅薄膜晶体管阵列基板
公开(公告)号：US5005056A
公开(公告)日：1991-04-02
申请号：US306373
申请日：1989-02-03
申请人： Noboru Motai , Sakae Tanaka , Yoshiaki Watanabe
发明人： Noboru Motai , Sakae Tanaka , Yoshiaki Watanabe
IPC分类号： H01L23/52 , G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/3205 , H01L27/12 , H01L29/45 , H01L29/78 , H01L29/786
CPC分类号： H01L29/458 , G02F1/1368 , G02F2001/136263 , G02F2202/103
摘要： A reverse staggered amorphous-silicon thin film transistor array substrate includes amorphous silicon thin film transistors in an array, gate wirings interconnecting the gate electrodes of the transistors, and source wirings of a transparent conductive layer connecting the source electrodes. An auxiliary source wiring of the material of the source electrodes of said transistors is provided under the source wiring.
摘要翻译：反向交错的非晶硅薄膜晶体管阵列基板包括阵列中的非晶硅薄膜晶体管，互连晶体管的栅极的栅极布线和连接源电极的透明导电层的源极布线。所述晶体管的源电极的材料的辅助源极布线设置在源极布线的下方。

47. 发明授权

US4979006A Reverse staggered type silicon thin film transistor 失效
标题翻译：反向交错型硅薄膜晶体管
公开(公告)号：US4979006A
公开(公告)日：1990-12-18
申请号：US358035
申请日：1989-05-26
申请人： Sakae Tanaka , Yoshiaki Watanabe , Katsuo Shirai , Yoshihisa Ogiwara
发明人： Sakae Tanaka , Yoshiaki Watanabe , Katsuo Shirai , Yoshihisa Ogiwara
IPC分类号： H01L27/12 , G02F1/136 , G02F1/1368 , H01L29/78 , H01L29/786
CPC分类号： H01L29/78669
摘要： A reverse staggered type silicon thin film transistor includes a substrate having a gate electrode; a gate insulating layer on the substrate and the gate electrode, the gate insulating layer having a transistor-forming portion; a lower layer silicon film on the transistor-forming portion of the gate insulating layer and in contact therewith, the lower layer silicon film being formed at a first temperature and with a first thickness; an upper layer silicon film formed on the transistor-forming portion of the gate insulating layer at a second temperature which is lower than the first temperature and with a second thickness greater than the first thickness; and n-type silicon layer on the upper layer silicon film and in contact therewith; a source electrode on the n-type silicon layer; and a drain electrode on the n-type silicon layer.
摘要翻译：反向交错型硅薄膜晶体管包括具有栅电极的基板; 在所述基板上的栅极绝缘层和所述栅电极，所述栅极绝缘层具有晶体管形成部分; 在所述栅极绝缘层的所述晶体管形成部分上与其接触的下层硅膜，所述下层硅膜以第一温度和第一厚度形成; 上层硅膜，形成在所述栅极绝缘层的所述晶体管形成部分上，所述第二温度低于所述第一温度，第二厚度大于所述第一厚度; 和n型硅层在上层硅膜上并与其接触; n型硅层上的源电极; 和n型硅层上的漏电极。

48. 发明授权

US4921953A Cephalosporin derivatives 失效
标题翻译：头孢菌素衍生物
公开(公告)号：US4921953A
公开(公告)日：1990-05-01
申请号：US309160
申请日：1989-02-13
申请人： Chihiro Yokoo , Akira Onodera , Hiroshi Fukushima , Yoshiaki Watanabe , Kaoru Sota
发明人： Chihiro Yokoo , Akira Onodera , Hiroshi Fukushima , Yoshiaki Watanabe , Kaoru Sota
IPC分类号： A61K31/545 , C07D501/36 , C07D501/59
CPC分类号： C07D501/59 , Y02P20/55
摘要： A cephalosporin derivative represented by the formula ##STR1## wherein R.sup.1 is a hydrogen atom or a protecting group of the amino group, R.sup.2 is a hydrogen atom or a protecting group of the hydroxyl group, R.sup.3 is a hydrogen atom or a protecting group of the carboxyl group, X is a halogen atom, a cyano group, a vinyl group, a lower alkoxy group having 1 to 4 carbon atoms or a lower alkylthio group having 1 to 4 carbon atoms and n is an integer of 1 to 3, and a non-toxic salt thereof are useful as antibacterial agents for oral administration.
摘要翻译：由下式表示的头孢菌素衍生物，其中R1为氢原子或氨基保护基，R2为氢原子或羟基保护基，R3为氢原子或保护基，羧基，X为卤素原子，氰基，乙烯基，碳原子数1〜4的低级烷氧基或碳原子数1〜4的低级烷硫基，n为1〜3的整数，其无毒盐可用作口服给药的抗菌剂。

49. 发明授权

US4130355A Photographic camera with an automatic exposure control adapter unit detachably mounted thereon 失效
标题翻译：具有可拆卸地安装在其上的自动曝光控制适配器单元的照相机
公开(公告)号：US4130355A
公开(公告)日：1978-12-19
申请号：US740310
申请日：1976-11-09
申请人： Shohei Ohtaki , Soichi Nakamoto , Tomonori Iwashita , Yoshiaki Watanabe , Susumu Kozuki
发明人： Shohei Ohtaki , Soichi Nakamoto , Tomonori Iwashita , Yoshiaki Watanabe , Susumu Kozuki
IPC分类号： G03B7/091 , G03B7/16
CPC分类号： G03B7/097
摘要： An automatic exposure control system permitting for a photographic camera to make an exposure in either of the shutter preselection automatic exposure range and the diaphragm preselection automatic exposure range is established by combination of an adapter unit with the camera. This adapter unit has a housing attachable to and detachable from the camera body, and includes an exposure operation and control circuit capable, upon preselection of an exposure time, of deriving an exposure value representing an effective exposure aperture, and, upon preselection of diaphragm value, of deriving an exposure value representing an exposure time. Responsive to the output of the adapter unit, the control device in the camera body controls operation of the shutter and diaphragm mechanisms thereof selectively in accordance with the exposure value derived from said exposure operation and control circuit. The provision for permitting the camera to make an exposure in an automatic flash exposure range is also made at the exposure operation and control circuit of the adapter unit in a manner to determine the period of energization of a flash unit associated with the camera.
摘要翻译：通过适配器单元与照相机的组合，建立允许照相机在快门预选自动曝光范围和光圈预选自动曝光范围中的曝光的自动曝光控制系统。该适配器单元具有可附接到照相机主体并且可从相机主体拆卸的外壳，并且包括曝光操作和控制电路，该曝光操作和控制电路能够在预选曝光时间之后得到表示有效曝光孔径的曝光值，并且在预先选择光阑值得出表示曝光时间的曝光值。响应于适配器单元的输出，照相机主体中的控制装置根据从所述曝光操作和控制电路导出的曝光值选择性地控制快门和光阑机构的操作。在适配器单元的曝光操作和控制电路中，也可以以确定与相机相关联的闪光单元的通电周期的方式来允许相机在自动闪光曝光范围内曝光的设置。

50. 发明授权

US4091395A Electrical power supply transfer system for a camera 失效
标题翻译：摄像机电源传输系统
公开(公告)号：US4091395A
公开(公告)日：1978-05-23
申请号：US784523
申请日：1977-04-04
申请人： Susumu Kozuki , Akio Sunouchi , Yoshiaki Watanabe
发明人： Susumu Kozuki , Akio Sunouchi , Yoshiaki Watanabe
IPC分类号： G03B9/08 , G03B17/00 , G03B17/18 , G03B17/42 , G03B1/18 , H02J7/00
CPC分类号： G03B17/00 , G03B17/425 , G03B7/0807 , Y10T307/625
摘要： In a combination of a photographic camera with an accessory equipment such as a motor drive unit attached thereto, when the voltage of a power source or battery provided in the camera for application to an automatic exposure control circuit thereof has fallen below a satisfactory operating level, a transfer switch is automatically operated to shift the connection of the exposure control circuit from the battery of the camera to an electrical power source or battery provided in the accessory equipment.
摘要翻译：在照相机与附加电动机驱动单元等附属设备的组合中，当设置在摄像机中的用于其自动曝光控制电路的电源或电池的电压已经降到满意的操作电平以下时，转移开关被自动操作以将曝光控制电路的连接从相机的电池移动到设置在附件设备中的电源或电池。

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