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41. 发明申请

US20080173942A1 STRUCTURE AND METHOD OF MANUFACTURING A STRAINED FinFET WITH STRESSED SILICIDE 审中-公开
标题翻译：具有应力硅化物的应变FinFET的结构和方法
公开(公告)号：US20080173942A1
公开(公告)日：2008-07-24
申请号：US11625431
申请日：2007-01-22
申请人： Huilong Zhu , Siddhartha Panda , Jay W. Strane , Sey-Ping Sun , Brian L. Tessier
发明人： Huilong Zhu , Siddhartha Panda , Jay W. Strane , Sey-Ping Sun , Brian L. Tessier
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/785 , H01L29/66795
摘要： A stressed semiconductor structure including at least one FinFET device on a surface of a substrate, typically a buried insulating layer of an initial semiconductor-on-insulator substrate, is provided. In a preferred embodiment, the at least one FinFET device includes a semiconductor Fin that is located on an unetched portion of the buried insulator layer which has a raised height as compared to an adjacent and adjoining etched portion of the buried insulating layer. The semiconductor Fin includes a gate dielectric on its sidewalls and optionally a hard mask located on an upper surface thereof. The inventive structure also includes a gate conductor, which is located on the surface of the substrate, typically the buried insulating layer, and the gate conductor is at least laterally adjacent to the gate dielectric located on the sidewalls of the semiconductor Fin. A stressed silicide is located on the gate conductor, which introduces stress into the channel of the FinFET device. The stressed silicide memorizes the stress from a sacrificial stressed film that is formed prior to forming the stressed silicide. The stress type of the stressed film is introduced into the silicide during a silicide anneal step.
摘要翻译：提供了一种应力半导体结构，其包括在衬底的表面上的至少一个FinFET器件，通常是初始绝缘体上半导体衬底的掩埋绝缘层。在优选实施例中，所述至少一个FinFET器件包括位于所述掩埋绝缘体层的未蚀刻部分上的半导体Fin，所述半导体Fin与所述掩埋绝缘层的相邻和相邻蚀刻部分相比具有升高的高度。半导体鳍包括其侧壁上的栅极电介质和任选地位于其上表面上的硬掩模。本发明的结构还包括栅极导体，其位于衬底的表面上，通常为掩埋绝缘层，并且栅极导体至少横向邻近位于半导体Fin的侧壁上的栅极电介质。应力硅化物位于栅极导体上，其将应力引入FinFET器件的沟道中。应力硅化物记忆在形成应力硅化物之前形成的牺牲应力膜的应力。在硅化物退火步骤期间，将应力膜的应力类型引入到硅化物中。

42. 发明申请

US20080078743A1 ELEVATED TEMPERATURE CHEMICAL OXIDE REMOVAL MODULE AND PROCESS 审中-公开
标题翻译：高温化学氧化物去除模块和工艺
公开(公告)号：US20080078743A1
公开(公告)日：2008-04-03
申请号：US11536388
申请日：2006-09-28
申请人： Andres F. Munoz , Siddhartha Panda , Michael R. Sievers , Richard Wise
发明人： Andres F. Munoz , Siddhartha Panda , Michael R. Sievers , Richard Wise
IPC分类号： C03C25/68 , B44C1/22 , C23F1/00
CPC分类号： H01L21/67248 , H01L21/02057
摘要： A temperature-controlled substrate holder having a high temperature substrate chuck is mounted within a chemical treatment chamber. The temperature-controlled substrate holder secures a substrate and maintains the substrate at a temperature that ranges from about 10° C. up to about 150° C. during execution of a chemical oxide removal process.
摘要翻译：具有高温基板卡盘的温度控制的基板保持器安装在化学处理室内。温度控制的衬底保持器固定衬底并且在执行化学氧化物去除过程期间将衬底维持在约10℃至约150℃的温度。

43. 发明申请

US20080026488A1 Method and apparatus for detecting endpoint in a dry etching system by monitoring a superimposed DC current 失效
标题翻译：通过监测叠加的直流电流来检测干蚀刻系统中的端点的方法和装置
公开(公告)号：US20080026488A1
公开(公告)日：2008-01-31
申请号：US11495725
申请日：2006-07-31
申请人： Siddhartha Panda , Richard Wise , Lee Chen , Michael Sievers
发明人： Siddhartha Panda , Richard Wise , Lee Chen , Michael Sievers
IPC分类号： H01L21/66 , C23F1/00
CPC分类号： H01J37/32935 , H01J37/32963 , H01L22/26
摘要： A method and apparatus for detecting the endpoint in a dry plasma etching system comprising a first electrode (e.g., upper electrode) and a second electrode (e.g., lower electrode) upon which a substrate rests is described. A direct current (DC) voltage is applied between the first electrode and a ring electrode surrounding the second electrode, and the DC current is monitored to determine the endpoint of the etching process. The DC current is affected by the impedance of the plasma, and therefore responds to many variations including, for example, the plasma density, electron/ion flux to exposed surfaces, the electron temperature, etc.
摘要翻译：描述了一种用于检测干等离子体蚀刻系统中的端点的方法和装置，其包括第一电极（例如，上电极）和第二电极（例如下电极），基板搁置在该第二电极上。在第一电极和围绕第二电极的环形电极之间施加直流（DC）电压，并且监视直流电流以确定蚀刻工艺的终点。直流电流受等离子体的阻抗影响，因此响应于许多变化，包括例如等离子体密度，暴露表面的电子/离子通量，电子温度等。

44. 发明授权

US07278300B2 Gas filled reactive atomic force microscope probe 失效
标题翻译：充气反应原子力显微镜探针
公开(公告)号：US07278300B2
公开(公告)日：2007-10-09
申请号：US11162958
申请日：2005-09-29
申请人： Michael R. Sievers , Siddhartha Panda , Richard Wise
发明人： Michael R. Sievers , Siddhartha Panda , Richard Wise
IPC分类号： G01B5/28
CPC分类号： G01Q60/38
摘要： An atomic force microscope (AFM) having a hollowed cantilever ending in a hollowed tip is described, wherein the end of the tip is immersed in a liquid. The AFM includes a gas source that provides and controls the flow of gas into the hollowed tip. The flow rate of the gas is regulated to form and sustain a static bubble at the end of the hollowed tip. The formation of the static bubble is verified optically. A gas control manifold allows an easy switch of gasses that are fed into the probe tip. The gas that is introduced acts like a chemically modified tip, and is selected to increase the deflection signal for the material of interest. The tip of the present invention is a highly versatile AFM tool that is easily adjusted to provide optimized imaging for a wide variety of materials, in contrast with standard AFMs that require a plethora of chemically modified tips to obtain equivalent results. Moreover, there is a much lower propensity for the tip to damage the sample or to be damaged from inadvertent contact with the surface of the sample.
摘要翻译：描述了一种具有终止在中空尖端中的中空悬臂的原子力显微镜（AFM），其中尖端的端部浸入液体中。 AFM包括提供和控制气体进入中空尖端的气体源。调节气体的流速以在中空末端的端部形成并维持静止气泡。静态气泡的形成被光学验证。气体控制歧管允许容易地切换进入探针尖端的气体。被引入的气体类似于化学改性的尖端，并且被选择以增加感兴趣的材料的偏转信号。本发明的尖端是一种高度通用性的AFM工具，其易于调节以为各种材料提供优化的成像，与需要大量化学修饰的尖端以获得等效结果的标准AFM相反。此外，尖端损坏样品或由于与样品表面无意接触而损坏的倾向低得多。

45. 发明申请

US20070158753A1 SEMICONDUCTOR DEVICE STRUCTURE HAVING LOW AND HIGH PERFORMANCE DEVICES OF SAME CONDUCTIVE TYPE ON SAME SUBSTRATE 失效
标题翻译：具有相同基板上的相同导电类型的低性能和高性能器件的半导体器件结构
公开(公告)号：US20070158753A1
公开(公告)日：2007-07-12
申请号：US11306716
申请日：2006-01-09
申请人： John C. Arnold , Dureseti Chidambarrao , Ying Li , Rajeev Malik , Shreesh Narasimha , Siddhartha Panda , Brian L. Tessier , Richard Wise
发明人： John C. Arnold , Dureseti Chidambarrao , Ying Li , Rajeev Malik , Shreesh Narasimha , Siddhartha Panda , Brian L. Tessier , Richard Wise
IPC分类号： H01L21/8238 , H01L21/336
CPC分类号： H01L21/823807 , H01L21/823864 , H01L27/0922 , H01L29/6656 , H01L29/7842 , H01L29/7843
摘要： A method for making a semiconductor device structure, includes: providing a substrate; forming on the substrate a first gate with first spacers, a second gate with second spacers, respective source and drain regions of a same conductive type adjacent to the first gate and the second gate, an isolation region disposed intermediate of the first gate and the second gate, silicides on the first gate, the second gate and respective source and drain regions; forming additional spacers on the first spacers to produce an intermediate structure, and then disposing a stress layer over the entire intermediate structure.
摘要翻译：一种制造半导体器件结构的方法，包括：提供衬底; 在衬底上形成具有第一间隔物的第一栅极，具有第二间隔物的第二栅极，与第一栅极和第二栅极相邻的相同导电类型的相应源极和漏极区域，设置在第一栅极和第二栅极之间的隔离区域栅极，第一栅极上的硅化物，第二栅极和相应的源极和漏极区域; 在第一间隔物上形成附加间隔物以产生中间结构，然后在整个中间结构上设置应力层。

46. 发明申请

US20070068234A1 GAS FILLED REACTIVE ATOMIC FORCE MICROSCOPE PROBE 失效
标题翻译：气体填充反应原子力显微镜探针
公开(公告)号：US20070068234A1
公开(公告)日：2007-03-29
申请号：US11162958
申请日：2005-09-29
申请人： Michael Sievers , Siddhartha Panda , Richard Wise
发明人： Michael Sievers , Siddhartha Panda , Richard Wise
IPC分类号： G01B5/28
CPC分类号： G01Q60/38
摘要： An atomic force microscope (AFM) having a hollowed cantilever ending in a hollowed tip is described, wherein the end of the tip is immersed in a liquid. The AFM includes a gas source that provides and controls the flow of gas into the hollowed tip. The flow rate of the gas is regulated to form and sustain a static bubble at the end of the hollowed tip. The formation of the static bubble is verified optically. A gas control manifold allows an easy switch of gasses that are fed into the probe tip. The gas that is introduced acts like a chemically modified tip, and is selected to increase the deflection signal for the material of interest. The tip of the present invention is a highly versatile AFM tool that is easily adjusted to provide optimized imaging for a wide variety of materials, in contrast with standard AFMs that require a plethora of chemically modified tips to obtain equivalent results. Moreover, there is a much lower propensity for the tip to damage the sample or to be damaged from inadvertent contact with the surface of the sample.
摘要翻译：描述了一种具有终止在中空尖端中的中空悬臂的原子力显微镜（AFM），其中尖端的端部浸入液体中。 AFM包括提供和控制气体进入中空尖端的气体源。调节气体的流速以在中空末端的端部形成并维持静止气泡。静态气泡的形成被光学验证。气体控制歧管允许容易地切换进入探针尖端的气体。被引入的气体类似于化学改性的尖端，并且被选择以增加感兴趣的材料的偏转信号。本发明的尖端是一种高度通用性的AFM工具，其易于调节以为各种材料提供优化的成像，与需要大量化学修饰的尖端以获得等效结果的标准AFM相反。此外，尖端损坏样品或由于与样品表面无意接触而损坏的倾向低得多。

47. 发明授权

US07186660B2 Silicon precursors for deep trench silicon etch processes 失效
标题翻译：用于深沟槽硅蚀刻工艺的硅前体
公开(公告)号：US07186660B2
公开(公告)日：2007-03-06
申请号：US10338964
申请日：2003-01-08
申请人： Siddhartha Panda , Richard S. Wise
发明人： Siddhartha Panda , Richard S. Wise
IPC分类号： H01L21/302
CPC分类号： H01L21/3065 , H01L27/10861
摘要： The present invention relates to etch chemistry and methods for the etching of silicon substrates. The method is particularly useful for deep trench etching of silicon substrates and produces a trench having a high aspect ratio. In this type of deep trench etching, control of the profile of the trench is addressed by the etch chemistry disclosed herein. The etchant described in the present invention comprises silicon and a halogen component, and may be gaseous, liquid or solid. The etchant disclosed is also substantially free of hydrogen and carbon.
摘要翻译：本发明涉及用于蚀刻硅衬底的蚀刻化学和方法。该方法对于硅衬底的深沟槽蚀刻特别有用，并且产生具有高纵横比的沟槽。在这种类型的深沟槽蚀刻中，通过本文公开的蚀刻化学处理对沟槽轮廓的控制。本发明中描述的蚀刻剂包括硅和卤素组分，并且可以是气态，液态或固体。所公开的蚀刻剂也基本上不含氢和碳。

48. 发明申请

US20060118718A1 ENDPOINT DETECTION FOR THE PATTERNING OF LAYERED MATERIALS 有权
标题翻译：用于分层材料的端点检测
公开(公告)号：US20060118718A1
公开(公告)日：2006-06-08
申请号：US10904883
申请日：2004-12-02
申请人： Michael Sievers , Siddhartha Panda , Richard Wise
发明人： Michael Sievers , Siddhartha Panda , Richard Wise
IPC分类号： G01N23/227
CPC分类号： G01N23/227 , H01L22/26
摘要： Photoelectron emissions are used to detect an endpoint of a thickness alteration of a topmost layer in a set of layers undergoing patterning. The set of layers are irradiated, which causes an emission of photoelectrons. Upon receipt of or absence of a photoelectron emission, patterning endpoint is detected.
摘要翻译：光电子发射用于检测经历图案化的一组层中最上层的厚度变化的端点。该层被照射，这导致光电子的发射。在接收到或不存在光电子发射时，检测到图案化端点。

49. 发明授权

US5525320A Process for aluminum nitride powder production 失效
标题翻译：氮化铝粉末生产工艺
公开(公告)号：US5525320A
公开(公告)日：1996-06-11
申请号：US273360
申请日：1994-07-11
申请人： Sotiris E. Pratsinis , M. Kamal Akhtar , Guizhi Wang , Siddhartha Panda
发明人： Sotiris E. Pratsinis , M. Kamal Akhtar , Guizhi Wang , Siddhartha Panda
IPC分类号： C01B21/06 , C01B21/072 , C01B21/064 , C01B21/076
CPC分类号： B82Y30/00 , C01B21/06 , C01B21/072 , C01P2002/60 , C01P2002/80 , C01P2004/03 , C01P2004/50 , C01P2004/51 , C01P2004/52 , C01P2004/61 , C01P2004/62 , C01P2004/64 , C01P2006/12
摘要： Processes for the direct manufacture of nitride powders suitable for low temperature sintering are provided. An elemental vapor is contacted with a nitriding gas at temperatures between 1400 and 1973 K and atmospheric pressure to produce nitride powder.
摘要翻译：提供了用于直接制造适用于低温烧结的氮化物粉末的方法。元素蒸汽在1400和1973K之间的温度和大气压下与氮化气体接触以产生氮化物粉末。

50. 发明授权

US08048325B2 Method and apparatus for multilayer photoresist dry development 有权
标题翻译：多层光刻胶干式显影的方法和装置
公开(公告)号：US08048325B2
公开(公告)日：2011-11-01
申请号：US11970062
申请日：2008-01-07
申请人： Vaidyanathan Balasubramaniam , Koichiro Inazawa , Rie Inazawa , Rich Wise , Arpan Mahorawala , Siddhartha Panda
发明人： Vaidyanathan Balasubramaniam , Koichiro Inazawa , Rie Inazawa , Rich Wise , Arpan Mahorawala , Siddhartha Panda
IPC分类号： B44C1/22
CPC分类号： H01L21/67069 , H01L21/31138
摘要： A method for etching an organic anti-reflective coating (ARC) layer on a substrate in a plasma processing system comprising: introducing a process gas comprising ammonia (NH3), and a passivation gas; forming a plasma from the process gas; and exposing the substrate to the plasma. The process gas can, for example, constitute NH3 and a hydrocarbon gas such as at least one of C2H4, CH4, C2H2, C2H6, C3H4, C3H6, C3H8, C4H6, C4H8, C4H10, C5H8, C5H10, C6H6, C6H10, and C6H12. Additionally, the process chemistry can further comprise the addition of helium. The present invention further presents a method for forming a bilayer mask for etching a thin film on a substrate, wherein the method comprises: forming the thin film on the substrate; forming an ARC layer on the thin film; forming a photoresist pattern on the ARC layer; and transferring the photoresist pattern to the ARC layer with an etch process using a process gas comprising ammonia (NH3), and a passivation gas.
摘要翻译：一种在等离子体处理系统中蚀刻衬底上的有机抗反射涂层（ARC）层的方法，包括：引入包含氨（NH 3）和钝化气体的工艺气体; 从工艺气体形成等离子体; 并将衬底暴露于等离子体。处理气体可以例如构成NH 3和烃气体，例如C 2 H 4，CH 4，C 2 H 2，C 2 H 6，C 3 H 4，C 3 H 6，C 3 H 8，C 4 H 6，C 4 H 8，C 4 H 10，C 5 H 8，C 5 H 10，C 6 H 6，C 6 H 10和C 6 H 12中的至少一种。另外，工艺化学可以进一步包括添加氦。本发明还提供一种用于形成用于在衬底上蚀刻薄膜的双层掩模的方法，其中所述方法包括：在所述衬底上形成所述薄膜; 在薄膜上形成ARC层; 在ARC层上形成光刻胶图案; 以及使用包含氨（NH 3）和钝化气体的工艺气体的蚀刻工艺将光致抗蚀剂图案转移到ARC层。

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