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41. 发明授权

US07231629B2 Feature optimization using enhanced interference mapping lithography 有权
标题翻译：使用增强干涉映射光刻技术的特征优化
公开(公告)号：US07231629B2
公开(公告)日：2007-06-12
申请号：US10976306
申请日：2004-10-29
申请人： Thomas Laidig
发明人： Thomas Laidig
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： Disclosed concepts include a method of, and program product for, optimizing an intensity profile of a pattern to be formed in a surface of a substrate relative to a given mask using an optical system. Steps include mathematically representing resolvable feature(s) from the given mask, generating a mathematical expression, an eigenfunction, representing certain characteristics of the optical system, modifying the mathematical the eigenfunction by filtering, generating an interference map in accordance with the filtered eigenfunction and the mathematical expression of the given mask, and determining assist features for the given mask based on the interference map. As a result, undesired printing in the surface of the substrate may be minimized.
摘要翻译：公开的概念包括使用光学系统优化相对于给定掩模在衬底表面中形成的图案的强度分布的方法和程序产品。步骤包括在数学上表示来自给定掩模的可解析特征，产生表示光学系统的某些特性的数学表达式，本征函数，通过滤波修改数学本征函数，根据滤波后的特征函数产生干涉图，给定掩模的数学表达式，以及基于干涉图确定给定掩模的辅助特征。结果，可以使衬底表面中不期望的印刷最小化。

42. 发明申请

US20050149900A1 Feature optimization using enhanced interference mapping lithography 有权
标题翻译：使用增强干涉映射光刻技术的特征优化
公开(公告)号：US20050149900A1
公开(公告)日：2005-07-07
申请号：US10976306
申请日：2004-10-29
申请人： Thomas Laidig
发明人： Thomas Laidig
IPC分类号： G03F1/00 , G03F1/36 , H01L21/027 , G06F17/50
CPC分类号： G03F1/36
摘要： Disclosed concepts include a method of, and program product for, optimizing an intensity profile of a pattern to be formed in a surface of a substrate relative to a given mask using an optical system. Steps include mathematically representing resolvable feature(s) from the given mask, generating a mathematical expression, an eigenfunction, representing certain characteristics of the optical system, modifying the mathematical the eigenfunction by filtering, generating an interference map in accordance with the filtered eigenfunction and the mathematical expression of the given mask, and determining assist features for the given mask based on the interference map. As a result, undesired printing in the surface of the substrate may be minimized.
摘要翻译：公开的概念包括使用光学系统优化相对于给定掩模在衬底表面中形成的图案的强度分布的方法和程序产品。步骤包括在数学上表示来自给定掩模的可解析特征，产生表示光学系统的某些特性的数学表达式，本征函数，通过滤波修改数学本征函数，根据滤波后的特征函数产生干涉图，给定掩模的数学表达式，以及基于干涉图确定给定掩模的辅助特征。结果，可以使衬底表面中不期望的印刷最小化。

43. 发明授权

US08390786B2 Optical imaging writer system 有权
标题翻译：光学成像系统
公开(公告)号：US08390786B2
公开(公告)日：2013-03-05
申请号：US12897726
申请日：2010-10-04
申请人： Thomas Laidig
发明人： Thomas Laidig
IPC分类号： G03B27/54 , G03B27/42
CPC分类号： G03F7/70291 , G03F7/70475 , G03F7/70508
摘要： System and method for processing image data between adjacent imaging areas in a lithography manufacturing process are disclosed. In one embodiment, the method includes providing a parallel imaging writer system which has a plurality of spatial light modulator (SLM) imaging units arranged in one or more parallel arrays, receiving a mask data pattern to be written to a substrate, processing the mask data pattern to form a plurality of partitioned mask data patterns corresponding to different areas of the substrate, identifying an overlapping region between adjacent imaging areas to be imaged by corresponding SLMs, determining a stitching path for merging the adjacent imaging areas in the overlapping region in accordance with a set of predetermined cost functions, and controlling the plurality of SLM imaging units to write the plurality of partitioned mask data patterns to the substrate in parallel using the stitching path.
摘要翻译：公开了在光刻制造工艺中在相邻成像区域之间处理图像数据的系统和方法。在一个实施例中，该方法包括提供并行成像写入器系统，其具有布置在一个或多个并行阵列中的多个空间光调制器（SLM）成像单元，接收要写入衬底的掩模数据模式，处理掩模数据形成与衬底的不同区域相对应的多个划分的掩模数据图案，识别由相应的SLM成像的相邻成像区域之间的重叠区域，确定用于根据重叠区域合并相邻成像区域的缝合路径一组预定的成本函数，并且控制所述多个SLM成像单元使用所述缝合路径并行地将所述多个划分的掩模数据图案写入所述基板。

44. 发明授权

US08390781B2 Optical imaging writer system 有权
标题翻译：光学成像系统
公开(公告)号：US08390781B2
公开(公告)日：2013-03-05
申请号：US12960535
申请日：2010-12-05
申请人： Thomas Laidig
发明人： Thomas Laidig
IPC分类号： G03B27/42 , G03B27/54
CPC分类号： G03F7/70275 , G03F7/70258 , G03F7/70291 , G03F7/70508
摘要： System and method for applying mask data patterns to substrate in a lithography manufacturing process are disclosed. In one embodiment, the method includes providing a parallel imaging writer system having a plurality of spatial light modulator (SLM) imaging units arranged in one or more parallel arrays, receiving a mask data pattern to be written to a substrate, processing the mask data pattern to form a plurality of partitioned mask data patterns corresponding to different areas of the substrate, identifying objects in an area of the substrate to be imaged by corresponding SLMs, selecting evaluation points along edges of the objects, configuring the parallel imaging writer system to image the objects using the evaluations points, and performing multiple exposures to image the objects in the area of the substrate by controlling the plurality of SLMs to write the plurality of partitioned mask data patterns in parallel.
摘要翻译：公开了在光刻制造工艺中将掩模数据图案应用于衬底的系统和方法。在一个实施例中，该方法包括提供并行成像写入器系统，其具有布置在一个或多个并行阵列中的多个空间光调制器（SLM）成像单元，接收要写入衬底的掩模数据模式，处理掩模数据模式形成对应于基板的不同区域的多个划分的掩模数据图案，通过对应的SLM识别要成像的基板的区域中的对象，沿对象边缘选择评估点，配置并行成像写入器系统以对使用评估点的对象，并且通过控制多个SLM以并行写入多个分割的掩码数据模式，执行多次曝光以对基板区域中的对象进行成像。

45. 发明申请

US20120262465A1 Parallel Image Processing System 有权
标题翻译：并行图像处理系统
公开(公告)号：US20120262465A1
公开(公告)日：2012-10-18
申请号：US13109563
申请日：2011-05-17
申请人： Barry KEANE , Thomas Laidig
发明人： Barry KEANE , Thomas Laidig
IPC分类号： G06F15/80
CPC分类号： G06T1/20 , G03F7/70425 , G06T11/40
摘要： System and method for a parallel image processing mechanism for applying mask data patterns to substrate in a lithography manufacturing process are disclosed. In one embodiment, the parallel image processing system includes a graphics engine configured to partition an object into a plurality of trapezoids and form an edge list for representing each of the plurality of trapezoids, and a distributor configured to receive the edge list from the graphics engine and distribute the edge list to a plurality of scan line image processing units. The system further includes a sentinel configured to synchronize operations of the plurality of scan line image processing units, and a plurality of buffers configured to store image data from corresponding scan line image processing units and outputs the stored image data using the sentinel.
摘要翻译：公开了一种用于在光刻制造工艺中将掩模数据图案应用于衬底的并行图像处理机构的系统和方法。在一个实施例中，并行图像处理系统包括被配置为将对象分割成多个梯形并形成用于表示多个梯形中的每一个的边缘列表的图形引擎，以及被配置为从图形引擎接收边缘列表的分配器并将边缘列表分发到多个扫描线图像处理单元。该系统还包括被配置为使多个扫描线图像处理单元的操作同步的多个缓冲器以及被配置为存储来自相应的扫描线图像处理单元的图像数据的多个缓冲器，并且使用该前哨输出所存储的图像数据。

46. 发明授权

US07355681B2 Optical proximity correction using chamfers and rounding at corners 有权
标题翻译：使用倒角进行光学邻近校正，并在角落四舍五入
公开(公告)号：US07355681B2
公开(公告)日：2008-04-08
申请号：US11101649
申请日：2005-04-08
申请人： Thomas Laidig , Markus Franciscus Antonius Eurlings
发明人： Thomas Laidig , Markus Franciscus Antonius Eurlings
IPC分类号： G03B27/32 , G03B27/42 , G03F9/00
CPC分类号： G03F1/36
摘要： Disclosed is a method of optimizing a design to be formed on a substrate. The method includes approximating rounding of at least one corner of an image of the design; generating a representation of the design further to the approximate rounding of the at least one corner; generating an initial representation of a mask utilized to image the design based on the representation; and performing Optical Proximity Correction (OPC) further to the initial representation of the mask.
摘要翻译：公开了一种优化要在基板上形成的设计的方法。该方法包括近似设计图像的至少一个角的舍入; 产生所述设计的表示进一步到所述至少一个角的近似舍入; 生成用于基于所述表示对所述设计进行成像的掩模的初始表示; 并进一步执行光学近距校正（OPC）以进行掩模的初始表示。

47. 发明申请

US20070162889A1 Method and apparatus for providing optical proximity features to a reticle pattern for deep sub-wavelength optical lithography 有权
公开(公告)号：US20070162889A1
公开(公告)日：2007-07-12
申请号：US11714147
申请日：2007-03-06
申请人： Douglas Broeke , Jang Chen , Thomas Laidig , Kurt Wampler , Stephen Hsu
发明人： Douglas Broeke , Jang Chen , Thomas Laidig , Kurt Wampler , Stephen Hsu
IPC分类号： H01L21/302 , H01L21/461 , G06F17/50 , G03F1/00
CPC分类号： G03F1/36 , G03F7/70441
摘要： A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining an interference map based on the target pattern, the interference map defining areas of constructive interference and areas of destructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; and placing assist features in the mask design based on the areas of constructive interference and the areas of destructive interference.

48. 发明申请

US20070031740A1 Method, program product and apparatus for performing mask feature pitch decomposition for use in a multiple exposure process 有权
标题翻译：用于进行多次曝光处理中使用的掩模特征间距分解的方法，程序产品和装置
公开(公告)号：US20070031740A1
公开(公告)日：2007-02-08
申请号：US11472544
申请日：2006-06-22
申请人： Jang Chen , Duan-Fu Hsu , Douglas Van Den Broeke , Thomas Laidig
发明人： Jang Chen , Duan-Fu Hsu , Douglas Van Den Broeke , Thomas Laidig
IPC分类号： G03F1/00
CPC分类号： G03F7/70466 , G03F1/70
摘要： A method for forming exposure masks for imaging a target pattern having features to be imaged on a substrate in a multi-exposure process. The method includes the steps of generating a set of decomposition rules defining whether a given feature of the target pattern is assigned to a first exposure mask or a second exposure mask; applying the decomposition rules to each of the features in the target pattern so as to assign each of the features in the target pattern to one of the first exposure mask or second exposure mask; and generating the first exposure mask and the second exposure mask containing the respective features assigned to each mask.
摘要翻译：一种形成曝光掩模的方法，用于在多曝光过程中对具有要被成像的特征的目标图案进行成像。该方法包括以下步骤：产生一组分解规则，定义目标图案的给定特征是否被分配给第一曝光掩模或第二曝光掩模; 将分解规则应用于目标图案中的每个特征，以将目标图案中的每个特征分配给第一曝光掩模或第二曝光掩模之一; 以及生成包含分配给每个掩模的各个特征的第一曝光掩模和第二曝光掩模。

49. 发明申请

US20050186491A1 Method for improved lithographic patterning utilizing multiple coherency optimized exposures and high transmission attenuated PSM 有权
公开(公告)号：US20050186491A1
公开(公告)日：2005-08-25
申请号：US11108665
申请日：2005-04-19
申请人： Michael Hsu , Stephen Hsu , Thomas Laidig , Douglas Broeke , Jang Chen
发明人： Michael Hsu , Stephen Hsu , Thomas Laidig , Douglas Broeke , Jang Chen
IPC分类号： G03F1/00 , G03F7/20 , H01L21/027 , G03F7/00
CPC分类号： G03F1/32 , G03F7/70091 , G03F7/70125 , G03F7/70283 , G03F7/70466 , G03F7/70591
摘要： A method for optically transferring a lithographic pattern corresponding to an integrated circuit utilizing a high transmission attenuated phase-shift mask onto a semiconductor substrate by use of an optical exposure tool. The method comprising the steps of generating a diffraction pattern corresponding to the lithographic pattern, where the diffraction pattern indicates a plurality of spatial frequency components corresponding to the lithographic pattern; determining which of the spatial frequency components need to be captured by a lens in the optical exposure tool in order to accurately reproduce the lithographic pattern; determining a set of illumination conditions required for the optical exposure tool to capture the spatial frequency components necessary for accurately reproducing the lithographic pattern; and illuminating the high transmission attenuated phase-shift mask with this set of illumination conditions.

50. 发明申请

US20050125765A1 Method and apparatus for decomposing semiconductor device patterns into phase and chrome regions for chromeless phase lithography 有权
标题翻译：将半导体器件图案分解为无铬相光刻的相位和铬区域的方法和装置
公开(公告)号：US20050125765A1
公开(公告)日：2005-06-09
申请号：US11035737
申请日：2005-01-18
申请人： Doug Broeke , Jang Chen , Thomas Laidig , Kurt Wampler , Stephen Hsu
发明人： Doug Broeke , Jang Chen , Thomas Laidig , Kurt Wampler , Stephen Hsu
IPC分类号： G03F1/00 , G03F7/20 , H01L21/027 , G06F17/50 , G03F9/00 , G21K5/00
CPC分类号： G03F1/34 , G03F1/36 , G03F7/70125 , G03F7/70425 , G03F7/70466 , G03F7/70941
摘要： A method of generating a mask of use in printing a target pattern on a substrate. The method includes the steps of (a) determining a maximum width of features to be imaged on the substrate utilizing phase-structures formed in the mask; (b) identifying all features contained in the target pattern having a width which is equal to or less than the maximum width; (c) extracting all features having a width which is equal to or less than the maximum width from the target pattern; (d) forming phase-structures in the mask corresponding to all features identified in step (b); and (e) forming opaque structures in the mask for all features remaining in target pattern after performing step (c).
摘要翻译：一种生成用于在基板上印刷目标图案的掩模的方法。该方法包括以下步骤：（a）使用形成在掩模中的相位结构来确定要在基板上成像的特征的最大宽度; （b）识别具有等于或小于最大宽度的宽度的目标图案中包含的所有特征; （c）从目标图案提取具有等于或小于最大宽度的宽度的所有特征; （d）在对应于在步骤（b）中识别的所有特征的掩模中形成相位结构; 和（e）在执行步骤（c）之后，在掩模中形成不透明结构以保持目标图案中的所有特征。

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