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    • 41. 发明申请
    • AD CONVERTER AND TD CONVERTER CONFIGURED WITHOUT OPERATIONAL AMPLIFIER AND CAPACITOR
    • AD转换器和TD转换器配置无运算放大器和电容器
    • US20120286987A1
    • 2012-11-15
    • US13470605
    • 2012-05-14
    • Hiroshi KAWAGUCHIMasahiko YoshimotoToshihiro KonishiShintaro Izumi
    • Hiroshi KAWAGUCHIMasahiko YoshimotoToshihiro KonishiShintaro Izumi
    • H03M1/50
    • H03M1/50H03M3/416
    • An AD converter includes a VT converter circuit part which inputs an analog input voltage and a sampling clock, converts the analog input voltage to a corresponding delay time, and outputs time domain data. A ring oscillator circuit part of N stages inputs the time domain data, and an error propagation circuit part takes out delay information containing a quantization error from phase information of the ring oscillator circuit part of the previous stage, and propagate the delay information to the ring oscillator circuit part of a subsequent stage. A counter circuit part measures a number of waves of an output oscillation waveform of the ring oscillator circuit part of each stage, and an output signal generator part generates an output signal from an output counted value of each counter circuit part. A reset part resets each error propagation circuit part and each counter circuit part with a sampling clock.
    • AD转换器包括输入模拟输入电压和采样时钟的VT转换器电路部分,将模拟输入电压转换为相应的延迟时间,并输出时域数据。 N级的环形振荡器电路部分输入时域数据,误差传播电路部分从前级的环形振荡电路部分的相位信息中取出包含量化误差的延迟信息,并将延迟信息传播到环 振荡电路是后续阶段的一部分。 计数器电路部分测量每个级的环形振荡器电路部分的输出振荡波形的波数,并且输出信号发生器部分根据每个计数器电路部分的输出计数值产生输出信号。 复位部分将采样时钟复位每个误差传播电路部分和每个计数器电路部分。
    • 42. 发明授权
    • Semiconductor memory and program
    • 半导体存储器和程序
    • US08238140B2
    • 2012-08-07
    • US12809684
    • 2009-01-07
    • Masahiko YoshimotoHiroshi KawaguchiShunsuke OkumuraHidehiro Fujiwara
    • Masahiko YoshimotoHiroshi KawaguchiShunsuke OkumuraHidehiro Fujiwara
    • G11C11/24G11C11/00G11C7/00G11C7/02G11C29/00
    • G11C11/4125G11C5/005
    • A memory wherein the bit reliability of the memory cells can be dynamically varied depending on the application or the memory status, the operation stability is ensured, and thereby a low power consumption and a high reliability are realized. Either a mode (a 1-bit/1-cell mode) in which one bit is composed of one memory cell or a mode (a 1-bit/n-cell mode) in which one bit is composed of n (n is two or more) connected memory cells is dynamically selected. When the 1-bit/n-cell mode is selected, the read/write stability of one bit is enhanced, the cell current during read is increased (read is speeded up), and a bit error, if occurs, is self-corrected. Especially, a pair of CMOS transistors and a control line for performing control so as to permit the CMOS transistors to conduct are added between the data holding nodes of n adjacent memory cells. With this, the word line (WL) is controlled, and thereby the operation stability is further improved.
    • 可以根据应用或存储器状态来动态地改变存储器单元的位可靠性的存储器,从而确保操作稳定性,从而实现低功耗和高可靠性。 一个位由一个存储器单元组成的模式(1位/ 1单元模式)或其中一个位由n组成的模式(1位/ n单元模式) 或更多)连接的存储器单元被动态地选择。 当选择1位/ n单元模式时,增加了一位的读/写稳定性,读取期间的单元电流增加(读取速度加快),如果出现位错误,则自校正 。 特别地,在n个相邻的存储单元的数据保持节点之间添加一对CMOS晶体管和用于执行控制以允许CMOS晶体管导通的控制线。 由此,对字线(WL)进行控制,从而进一步提高操作稳定性。
    • 49. 发明授权
    • Redundancy-secured semiconductor memory
    • 冗余半导体存储器
    • US4606013A
    • 1986-08-12
    • US579604
    • 1984-02-13
    • Masahiko Yoshimoto
    • Masahiko Yoshimoto
    • G11C29/00G11C29/04G11C11/40
    • G11C29/789G11C29/832
    • A redundancy-secured semiconductor memory including a matrix of regular memory cells consisting of a plurality of regular memory cell trains, an extra memory cell train for redundant construction, and a taking-over system for enabling the extra memory cell train to take over the function of a faulty regular memory cell train including a faulty bit, wherein the taking-over system comprises a decoder and a monostable latching circuit connected to the decoder through a current conducting element capable of breakage in response to when one of the regular memory cell trains comes to include a faulty bit, thereby enabling the monostable latching circuit to fix its output to the low logic potential. Thus, the faulty regular memory cell train is kept in an unselected state without DC power consumption.
    • 一种冗余保护半导体存储器,包括由多个常规存储单元列组成的常规存储器单元矩阵,用于冗余结构的额外存储单元串,以及用于使额外存储单元串能够接管功能的接管系统 包括故障位的故障常规存储器单元串,其中,所述接收系统包括解码器和单稳态锁存电路,所述解调器和单稳态锁存电路通过电流传导元件连接到所述解码器,所述电流导电元件响应于当所述常规存储器单元列中的一个来自 以包括故障位,从而使单稳态锁存电路将其输出固定为低逻辑电位。 因此,故障的常规存储器单元串在没有DC功率消耗的情况下保持在未选择状态。