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41. 发明授权

US07961439B2 High-frequency oscillation element, magnetic information recording head, and magnetic storage device 有权
标题翻译：高频振荡元件，磁信息记录头和磁存储装置
公开(公告)号：US07961439B2
公开(公告)日：2011-06-14
申请号：US10878387
申请日：2004-06-29
申请人： Rie Sato , Koichi Mizushima
发明人： Rie Sato , Koichi Mizushima
IPC分类号： G11B5/39
CPC分类号： G11B5/314 , G11B2005/0005 , H03B15/006
摘要： A high-frequency oscillation element has a ferromagnetic material which exhibits thermal fluctuation of magnetization and generates spin fluctuations in conduction electrons, a nonmagnetic conductive material which is laminated on the first magnetic material and transfers the conduction electrons, a magnetic material which is laminated on the nonmagnetic conductive material, generates magnetic resonance upon injection of the conduction electrons, and imparts magnetic dipole interaction to magnetization of a neighboring magnetic area by means of magnetic vibration stemming from the magnetic resonance, a first electrode electrically coupled with the first magnetic material, and a second electrode electrically coupled with the second magnetic material.
摘要翻译：高频振荡元件具有表现出磁化强度波动并产生导电电子自旋波动的铁磁材料，层叠在第一磁性材料上并传导导电电子的非磁性导电材料，层叠在第一磁性材料上的磁性材料非磁性导电材料在注入导电电子时产生磁共振，并且借助于从磁共振产生的磁振动，与第一磁性材料电耦合的第一电极和相互磁性区域的电磁耦合，使相邻磁场的磁化与磁偶极相互作用，以及与第二磁性材料电耦合的第二电极。

42. 发明申请

US20110013304A1 SIGNAL REPRODUCING METHOD, MAGNETIC HEAD AND MAGNETIC RECORDING AND REPRODUCING APPARATUS 有权
标题翻译：信号再现方法，磁头和磁记录和再现装置
公开(公告)号：US20110013304A1
公开(公告)日：2011-01-20
申请号：US12889686
申请日：2010-09-24
申请人： Rie Sato , Koichi Mizushima
发明人： Rie Sato , Koichi Mizushima
IPC分类号： G11B20/06
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/398 , G11B20/10009 , G11B2005/001 , G11B2005/0024 , G11B2005/3996
摘要： A magnetic head, includes a magnetic oscillation element, the oscillation frequency of which is modulated by a medium magnetic field, and a reproducing device configured to detect a phase difference between the adjacent oscillation signals derived from the magnetic oscillation element and output a phase difference signal as a reproduced signal.
摘要翻译：一种磁头，包括其振荡频率由中等磁场调制的磁振动元件，以及再现装置，被配置为检测从磁振动元件导出的相邻振荡信号之间的相位差，并输出相位差信号作为再生信号。

43. 发明授权

US07813087B2 Magnetic memory device having spin wave oscillator arranged to heat magnetic tunnel junction element 有权
标题翻译：具有自旋波振荡器的磁存储器件被布置成加热磁性隧道结元件
公开(公告)号：US07813087B2
公开(公告)日：2010-10-12
申请号：US12332382
申请日：2008-12-11
申请人： Rie Sato , Koichi Mizushima
发明人： Rie Sato , Koichi Mizushima
IPC分类号： G11B5/39 , G11C11/14
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3196 , G11B20/10009 , G11B20/10046 , G11B20/24 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L43/08
摘要： A magnetic memory device includes a magnetic tunnel junction element having a plurality of ferromagnetic layers stacked with a dielectric layer interposed between the adjacent ferromagnetic layers and storing magnetic information through reversal of magnetization of at least one of the magnetization layers, and a spin wave oscillator having a magnetization free layer, a nonmagnetic layer stacked on the magnetization free layer, a magnetization pinned layer stacked on the nonmagnetic layer, and a pair of electrodes adapted to apply current in the direction perpendicular to the surface of the magnetization free layer, the nonmagnetic layer and the magnetization pinned layer to thereby generate a spin wave. The spin wave oscillator is arranged in vicinity of the magnetic tunnel junction element to allow heating of the magnetic tunnel junction element and reversal of magnetization.
摘要翻译：一种磁存储器件包括磁性隧道结元件，该磁性隧道结元件具有叠置在相邻铁磁层之间的电介质层的多个铁磁层，并且通过使至少一个磁化层反转磁化来存储磁信息;以及自旋波振荡器，磁化自由层，层叠在无磁化层上的非磁性层，层叠在非磁性层上的磁化固定层，以及一对电极，其适于在与磁化自由层的表面垂直的方向上施加电流，非磁性层和磁化固定层，从而产生自旋波。自旋波振荡器布置在磁性隧道结元件附近，以允许加热磁性隧道结元件并使磁化反转。

44. 发明授权

US07265394B2 Spin tunnel transistor 有权
标题翻译：旋转隧道晶体管
公开(公告)号：US07265394B2
公开(公告)日：2007-09-04
申请号：US11446245
申请日：2006-06-05
申请人： Rie Sato , Koichi Mizushima
发明人： Rie Sato , Koichi Mizushima
IPC分类号： H01L29/739 , H01L31/00
CPC分类号： H01L29/66984 , H01L43/08
摘要： Some spin tunnel transistors with a larger current transmittance and a higher MR ratio are described.One of the spin tunnel transistor comprises a collector; an emitter; abase formed between the collector and the emitter, including a first ferromagnetic metal layer variable in its magnetization under an external magnetic field; a barrier layer formed between the first ferromagnetic metal layer and one of the collector and the emitter, the other of the collector and the emitter including a semiconductor crystal layer; and a transition metal silicide crystal layer between the semiconductor crystal layer and the base. The transition metal silicide crystal layer may be replaced with a palladium layer, a transition metal nitride layer, or a transition metal carbide layer.
摘要翻译：描述了具有较大电流透射率和较高MR比的一些自旋隧道晶体管。一个自旋隧道晶体管包括集电极; 发射器在集电极和发射极之间形成，包括在外部磁场下其磁化可变的第一强磁性金属层; 形成在所述第一强磁性金属层与所述集电极和发射极中的一个之间的阻挡层，所述集电极和所述发射极中的另一个包括半导体晶体层; 以及在半导体晶体层和基底之间的过渡金属硅化物晶体层。过渡金属硅化物晶体层可以用钯层，过渡金属氮化物层或过渡金属碳化物层代替。

45. 发明申请

US20050079665A1 Spin tunnel transistor 失效
标题翻译：旋转隧道晶体管
公开(公告)号：US20050079665A1
公开(公告)日：2005-04-14
申请号：US10926090
申请日：2004-08-26
申请人： Rie Sato , Koichi Mizushima
发明人： Rie Sato , Koichi Mizushima
IPC分类号： H01L29/82 , H01L21/8238 , H01L29/66 , H01L43/08
CPC分类号： H01L29/66984 , H01L43/08
摘要： Some spin tunnel transistors with a larger current transmittance and a higher MR ratio are described. One of the spin tunnel transistor comprises a collector; an emitter; a base formed between the collector and the emitter, including a first ferromagnetic metal layer variable in its magnetization under an external magnetic field; a barrier layer formed between the first ferromagnetic metal layer and one of the collector and the emitter, the other of the collector and the emitter including a semiconductor crystal layer; and a transition metal silicide crystal layer between the semiconductor crystal layer and the base. The transition metal silicide crystal layer may be replaced with a palladium layer, a transition metal nitride layer, or a transition metal carbide layer.
摘要翻译：描述了具有较大电流透射率和较高MR比的一些自旋隧道晶体管。一个自旋隧道晶体管包括集电极; 发射器形成在集电极和发射极之间的基底，包括在外部磁场下磁化可变的第一强磁性金属层; 形成在所述第一强磁性金属层与所述集电极和发射极中的一个之间的阻挡层，所述集电极和所述发射极中的另一个包括半导体晶体层; 以及在半导体晶体层和基底之间的过渡金属硅化物晶体层。过渡金属硅化物晶体层可以用钯层，过渡金属氮化物层或过渡金属碳化物层代替。

46. 发明授权

US07817375B2 Magnetic recording head having spin wave oscillator which locally heats a recording track 有权
标题翻译：磁记录头具有本地加热记录轨道的自旋波振荡器
公开(公告)号：US07817375B2
公开(公告)日：2010-10-19
申请号：US12332393
申请日：2008-12-11
申请人： Rie Sato , Koichi Mizushima
发明人： Rie Sato , Koichi Mizushima
IPC分类号： G11B5/39 , G11B5/10 , G11B5/127
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3196 , G11B20/10009 , G11B20/10046 , G11B20/24 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L43/08
摘要： A magnetic recording head includes a spin wave oscillator having a lamination film including a first magnetic layer and a second magnetic layer, and a pair of electrodes adapted to inject a current between the first magnetic layer and the second magnetic layer to generate a spin wave in one of the first magnetic layer and the second magnetic layer; and a recording magnetic pole provided on one side with the spin wave oscillator, the spin wave oscillator locally heating the recording track prior to recording by the recording magnetic pole.
摘要翻译：磁记录头包括具有包括第一磁性层和第二磁性层的叠层膜的自旋波振荡器，以及适于在第一磁性层和第二磁性层之间注入电流以产生自旋波的一对电极第一磁性层和第二磁性层之一; 以及设置在自旋波振荡器的一侧的记录磁极，自旋波振荡器在由记录磁极记录之前对记录磁道进行局部加热。

47. 发明授权

US06990013B2 Magnetic memory, and method for writing the same 失效
标题翻译：磁记忆体及其写入方法
公开(公告)号：US06990013B2
公开(公告)日：2006-01-24
申请号：US10808404
申请日：2004-03-25
申请人： Rie Sato , Koichi Mizushima
发明人： Rie Sato , Koichi Mizushima
IPC分类号： G11C11/00
CPC分类号： G11C11/15
摘要： A magnetic memory includes: a spin polarization unit configured to spin-polarize electrons constituting a write current; a hot electron generation unit configured to convert electrons constituting the write current into hot electrons; and a magnetic layer which is subjected to magnetization reversal by the write current that has been spin-polarized by the spin polarization unit and converted into hot electrons by the hot electron generation unit.
摘要翻译：磁存储器包括：自旋极化单元，被配置为使构成写入电流的电子自旋极化; 配置为将构成写入电流的电子转换为热电子的热电子生成单元; 以及通过已经被自旋极化单元自旋极化并由热电子发生单元转换成热电子的写入电流而被磁化反转的磁性层。

48. 发明授权

US06501143B2 Spin-valve transistor 失效
公开(公告)号：US06501143B2
公开(公告)日：2002-12-31
申请号：US09893447
申请日：2001-06-29
申请人： Rie Sato , Koichi Mizushima
发明人： Rie Sato , Koichi Mizushima
IPC分类号： H01L2982
CPC分类号： H01F10/325 , B82Y10/00 , B82Y25/00 , B82Y40/00 , H01F41/302 , H01L29/66984
摘要： A spin-valve transistor has an emitter, a base including a spin-valve film in which two magnetic layers are stacked with interposing a nonmagnetic layer between the two magnetic layers, and a collector, the spin-valve film having a stacked structure of M/A/M′ or M/B/M′ and the spin-valve film being (100)-oriented, where each of M and M′ includes at least one element selected from the group consisting of Fe, Co, Ni and an alloy including Fe, Co, Ni, A includes at least one element selected from the group consisting of Au, Ag, Pt, Cu and Al, and B includes at least one element selected from the group consisting of Cr and Mn.

49. 发明授权

US07580227B2 Magnetic element, magnetic information reproducing head, and magnetic information reproducing apparatus 有权
标题翻译：磁性元件，磁信息再现头和磁信息重放装置
公开(公告)号：US07580227B2
公开(公告)日：2009-08-25
申请号：US10875273
申请日：2004-06-25
申请人： Rie Sato , Koichi Mizushima
发明人： Rie Sato , Koichi Mizushima
IPC分类号： G11B5/39
CPC分类号： G11B5/31 , G11B5/127 , G11B5/33
摘要： A magnetic element has a first magnetic material exhibiting thermal fluctuation of magnetization which depends on an external magnetic field and generates spin fluctuation in conduction electrons; a nonmagnetic conductive material which is laminated on the first magnetic material and transfers the conduction electrons; a second magnetic material which is laminated on the nonmagnetic conductive material and generates a magnetic resonance upon injection of the conduction electrons; a first electrode electrically coupled with the first magnetic material; and a second electrode electrically coupled with the second magnetic material.
摘要翻译：磁性元件具有表现出取决于外部磁场的磁化热波动的第一磁性材料，并产生传导电子的自旋波动; 非磁性导电材料，层压在第一磁性材料上并传导传导电子; 第二磁性材料层压在非磁性导电材料上并在注入导电电子时产生磁共振; 与第一磁性材料电耦合的第一电极; 以及与第二磁性材料电耦合的第二电极。

50. 发明授权

US07084470B2 Spin tunnel transistor 失效
标题翻译：旋转隧道晶体管
公开(公告)号：US07084470B2
公开(公告)日：2006-08-01
申请号：US10926090
申请日：2004-08-26
申请人： Rie Sato , Koichi Mizushima
发明人： Rie Sato , Koichi Mizushima
IPC分类号： H01L29/82 , H01L43/00
CPC分类号： H01L29/66984 , H01L43/08
摘要： Some spin tunnel transistors with a larger current transmittance and a higher MR ratio are described.One of the spin tunnel transistor comprises a collector; an emitter; a base formed between the collector and the emitter, including a first ferromagnetic metal layer variable in its magnetization under an external magnetic field; a barrier layer formed between the first ferromagnetic metal layer and one of the collector and the emitter, the other of the collector and the emitter including a semiconductor crystal layer; and a transition metal silicide crystal layer between the semiconductor crystal layer and the base. The transition metal silicide crystal layer may be replaced with a palladium layer, a transition metal nitride layer, or a transition metal carbide layer.
摘要翻译：描述了具有较大电流透射率和较高MR比的一些自旋隧道晶体管。一个自旋隧道晶体管包括集电极; 发射器形成在集电极和发射极之间的基底，包括在外部磁场下磁化可变的第一强磁性金属层; 形成在所述第一强磁性金属层与所述集电极和发射极中的一个之间的阻挡层，所述集电极和所述发射极中的另一个包括半导体晶体层; 以及在半导体晶体层和基底之间的过渡金属硅化物晶体层。过渡金属硅化物晶体层可以用钯层，过渡金属氮化物层或过渡金属碳化物层代替。

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