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    • 41. 发明授权
    • Columnar structured material and manufacturing method therefor
    • 柱状结构材料及其制造方法
    • US06930057B2
    • 2005-08-16
    • US10744390
    • 2003-12-23
    • Tatsuya SaitoTohru Den
    • Tatsuya SaitoTohru Den
    • G11B5/65C25D11/16G11B5/74G11B5/82G11B5/84G11B5/855G11B5/858H01L21/31B05D3/00H01L21/461
    • C25D11/16B82Y10/00G11B5/74G11B5/743G11B5/82G11B5/8404G11B5/855G11B5/858
    • To provide a method for manufacturing a magnetic recording medium which creates anodically oxidized aluminum nanoholes so as to have a rectangular or elliptical sectional shape and gives shape anisotropy to a magnetic material filled in the nanoholes to thereby always fix a relative positional relation between magnetizations of the magnetic material and a magnetic head that detects the magnetizations. The method for manufacturing a magnetic recording medium includes: preparing a member having regularly arranged plural pits; subjecting the member to anodic oxidation treatment so that formation of holes is started with the pits as starting points, and a porous region, which has a first portion where the holes are formed without branching and a second portion where branched holes are formed, is formed; filling a magnetic material in the formed holes; and removing the non-branching portions of the holes.
    • 为了提供一种制造磁记录介质的方法,该磁记录介质产生阳极氧化的铝纳米孔,从而具有矩形或椭圆形截面形状,并且对填充在该纳米孔中的磁性材料赋予形状各向异性,从而总是将相对位置关系固定在 磁性材料和检测磁化的磁头。 制造磁记录介质的方法包括:制备具有规则排列的多个凹坑的构件; 对构件进行阳极氧化处理,以便以凹坑为起点开始孔的形成,并且形成有多孔区域,其具有不分支形成孔的第一部分和形成有分支孔的第二部分 ; 在形成的孔中填充磁性材料; 并且去除所述孔的非分支部分。
    • 43. 发明授权
    • Phase-controlled source synchronous interface circuit
    • 相控源同步接口电路
    • US06813724B2
    • 2004-11-02
    • US09796557
    • 2001-03-02
    • Tatsuya Saito
    • Tatsuya Saito
    • G06F112
    • G06F13/423
    • A source synchronous type interface circuit in which, for fetch of a transmitted data, a source synchronous clock indicating a data transmission timing is transmitted from transmission to reception side along with the data, so that a reception clock is generated to define an operation timing of a first reception flip-flop for taking in a data from the reception signal of the source synchronous clock. The interface further includes a second reception flip-flop for feeding an output from the first reception flip-flop further to a second reception flip-flop in synchronization with a common system clock and a variable delay circuit for absorbing phase fluctuations of the first reception flip-flop depending on transmission delay time, to assure a phase difference required for correctly receiving the data. The variable delay circuit has a delay amount automatically controlled according to phase differences between the system clock and the source synchronous clock received.
    • 一种源同步型接口电路,其中为了获取发送数据,指示数据发送定时的源同步时钟与数据一起从发送发送到接收侧,使得产生接收时钟以定义操作定时 用于从源同步时钟的接收信号接收数据的第一接收触发器。 该接口还包括第二接收触发器,用于与公共系统时钟同步地向第二接收触发器馈送来自第一接收触发器的输出,以及用于吸收第一接收翻转的相位波动的可变延迟电路 -flop取决于传输延迟时间,以确保正确接收数据所需的相位差。 可变延迟电路具有根据系统时钟和接收的源同步时钟之间的相位差自动控制的延迟量。
    • 45. 发明授权
    • More-than-one detector
    • 多于一个的检测器
    • US5815007A
    • 1998-09-29
    • US632391
    • 1996-04-10
    • Tatsuya Saito
    • Tatsuya Saito
    • H03K19/20H03K19/0944H03K19/0948H03K19/23H03K19/094H03K19/082
    • H03K19/23H03K19/0948
    • In order to provide a detector with fewer switching elements for detecting simultaneous occurrence of more than one of logic `1` or logic `0` out of plural inputs, 4 inputs A, B, C and D for example, a detector of the invention detects more than one of logic `1` from NAND logic of outputs of 3 OR-NAND composit gates as follows. ##EQU1## Each OR-NAND composit gate is composed of 4 pMOS transistors for common use and 4 nMOS transistors and a NAND gate of 3 inputs is composed of 3 pMOS transistors and 3 nMOS transistors. Therefore, the detector of 4 inputs of the invention can be composed of 22 MOSFETs insted of 36 MOSFETs needed for a conventional detector of 6 NAND gates of 2 inputs and a NAND gate of 6 inputs.
    • 为了提供具有更少的开关元件的检测器,用于检测多个输入中的逻辑“1”或逻辑“0”的多于一个,例如4个输入A,B,C和D,本发明的检测器 从3个OR-NAND复合门的输出的NAND逻辑中检测多个逻辑“1”,如下。 A x B + A x C + A x D + B x C + B x D + C x D = NOT(NOT(A x(B + C + D))+ NOT((A + B)x(C + D))+ + TR NOT((A + B + C)×D))每个OR-NAND复合栅极由4个常用的pMOS晶体管和4个nMOS晶体管组成,3个输入的NAND门由3个pMOS 晶体管和3 nMOS晶体管。 因此,本发明的4个输入的检测器可以由22个MOSFET构成,其中36个MOSFET是用于2个输入的6个NAND门的常规检测器和6个输入的NAND门所需要的。
    • 48. 发明授权
    • Optical communication device
    • 光通信设备
    • US08445832B2
    • 2013-05-21
    • US13201212
    • 2009-03-05
    • Takashi TakemotoHiroki YamashitaTatsuya Saito
    • Takashi TakemotoHiroki YamashitaTatsuya Saito
    • H03F3/08H01J43/00H01J40/14G01R19/00
    • H03F3/087H03F1/223H03F1/34H03F3/082H03F3/3022H03F3/505H03F2200/453H04B10/6933
    • An optical communication device which can be operated at high speed is provided. For example, the optical communication device includes: a pre-amplifier circuit PREAMP1 amplifying a current signal Iin from a photodiode PD, and converting an amplified signal into a voltage signal; and an operating-point controller circuit VTCTL1 controlling an operation of the PREAMP1. The PREAMP1 includes a negative feedback path formed by a feedback resistance Rf1, and includes: a level-shift circuit LS1 level-shifting in accordance with an operating-point control signal Vcon; and an amplifier circuit AMP1 connected to a subsequent stage of the LS1 and performing an amplifying operation with a high gain. The VTCTL1 includes a replica circuit configured by the same circuit and circuit parameter as those of the AMP1 and electrically connected between the input and the output, and generates the Vcon so that an output DC level of this replica circuit is matched with an input DC level of the AMP1.
    • 提供可以高速运转的光通信装置。 例如,光通信装置包括:前置放大器电路PREAMP1,放大来自光电二极管PD的电流信号Iin,将放大后的信号变换为电压信号; 以及控制PREAMP1的操作的操作点控制器电路VTCTL1。 PREAMP1包括由反馈电阻Rf1形成的负反馈路径,并且包括:根据工作点控制信号Vcon的电平移位电路LS1电平移位; 以及连接到LS1的后级并且以高增益进行放大操作的放大器电路AMP1。 VTCTL1包括由与AMP1相同的电路和电路参数配置的电路复用电路,并且电连接在输入和输出端之间,并产生Vcon,使得该复制电路的输出直流电平与输入直流电平相匹配 的AMP1。