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    • 47. 发明授权
    • Nonvolatile memory
    • 非易失性存储器
    • US08223563B2
    • 2012-07-17
    • US13086383
    • 2011-04-13
    • Kenji KozakaiTakeshi NakamuraTatsuya IshiiMotoyasu TsunodaShinya IguchiJunichi Maruyama
    • Kenji KozakaiTakeshi NakamuraTatsuya IshiiMotoyasu TsunodaShinya IguchiJunichi Maruyama
    • G11C5/14
    • G06F12/0246G06F11/1068G06F12/06G06F2212/1036G11C16/04G11C16/10G11C16/349G11C29/44G11C29/76G11C2029/0409
    • For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.
    • 对于允许电子写入和擦除要存储的信息(例如闪存)的非易失性存储器,系统开发者的负载将被减少,并且即使这样的系统的重要数据也可以避免 由于管理和地址转换信息被破坏,系统无法运行的异常状态。 非易失性存储器设置有替换功能,以替换包括不能正常写入或擦除的缺陷存储器单元的存储器单元组,所述存储器单元不包括不存在缺陷存储器单元的存储单元组,重写次数用于掌握数量 的每个存储器单元组中的数据重写,并且因此执行存储单元组的替换,使得多个存储单元组之间的重写次数可能没有显着差异,以及用于检测和校正任何错误的错误校正功能 存储在存储器阵列中的数据,其中从替换功能导出的第一地址转换信息和从重写平均函数导出的第二地址转换信息被存储在存储器阵列中的分别规定的区域中,并且第一地址转换信息和第二地址 关于相同存储单元组的翻译信息是sto 以时间序列的多个集合中的红色。
    • 48. 发明授权
    • Electro-optical device, method of driving the same, and electronic apparatus
    • 电光装置及其驱动方法以及电子装置
    • US07804548B2
    • 2010-09-28
    • US11421952
    • 2006-06-02
    • Tatsuya Ishii
    • Tatsuya Ishii
    • H04N3/14G09G3/36
    • G09G3/3648G09G2310/0218G09G2310/0297G09G2320/0233H04N9/3176
    • An electro-optical device includes: a plurality of scanning lines; a plurality of data lines which are divided into blocks each composed of m data lines (m is an integer equal to or larger than 2); pixels which are provided at intersections of the plurality of scanning lines and the plurality of data lines and each of which emits light at a gray-scale level designated by a data signal sampled to the data line when the scanning line is selected; a scanning line driving circuit which selects at least one of the scanning lines in a horizontal scanning period; a sampling signal output circuit which outputs sampling signals for sequentially selecting the blocks in the horizontal scanning period; a rotation circuit which inputs the data signals to m pixels corresponding to the selected scanning line and the data lines belonging to the selected block and distributes the input data signals corresponding to the m pixels to m image signal lines according to a correspondence prescribed by one or more predetermined control signals; and sampling switches each of which is provided to the data line and samples the data signals distributed to the m image signal lines to the m data lines belonging to one block on the basis of the sampling signal.
    • 电光装置包括:多条扫描线; 多个数据线,被划分成由m个数据线(m是等于或大于2的整数)组成的块; 设置在所述多条扫描线和所述多条数据线的交点处的各像素,其中,当选择所述扫描线时,所述多个扫描线和所述多条数据线的每个以由被采样到所述数据线的数据信号指定的灰度级发光; 扫描线驱动电路,其在水平扫描期间中选择至少一条扫描线; 采样信号输出电路,其输出用于在水平扫描周期中顺序选择块的采样信号; 将数据信号输入到与所选择的扫描线对应的m个像素和属于所选择的块的数据线的旋转电路,根据由m个像素指定的对应关系将m个像素对应的输入数据信号分配给m个图像信号线, 更多预定的控制信号; 以及每个被提供给数据线的采样开关,并且基于采样信号将分配给m个图像信号线的数据信号采样到属于一个块的m个数据线。
    • 49. 发明申请
    • NONVOLATILE MEMORY
    • 非易失性存储器
    • US20090187702A1
    • 2009-07-23
    • US12409386
    • 2009-03-23
    • Kenji KOZAKAITakeshi NakamuraTatsuya IshiiMotoyasu TsunodaShinya IguchiJunichi Maruyama
    • Kenji KOZAKAITakeshi NakamuraTatsuya IshiiMotoyasu TsunodaShinya IguchiJunichi Maruyama
    • G06F12/02G06F12/00
    • G06F12/0246G06F11/1068G06F12/06G06F2212/1036G11C16/04G11C16/10G11C16/349G11C29/44G11C29/76G11C2029/0409
    • For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.
    • 对于允许电子写入和擦除要存储的信息(例如闪存)的非易失性存储器,系统开发者的负载将被减少,并且即使这样的系统的重要数据也可以避免 由于管理和地址转换信息被破坏,系统无法运行的异常状态。 非易失性存储器设置有替换功能,以替换包括不能正常写入或擦除的缺陷存储器单元的存储器单元组,所述存储器单元不包括不存在缺陷存储器单元的存储单元组,重写次数用于掌握数量 的每个存储器单元组中的数据重写,并且因此执行存储单元组的替换,使得多个存储单元组之间的重写次数可能没有显着差异,以及用于检测和校正任何错误的错误校正功能 存储在存储器阵列中的数据,其中从替换功能导出的第一地址转换信息和从重写平均函数导出的第二地址转换信息被存储在存储器阵列中的分别规定的区域中,并且第一地址转换信息和第二地址 关于相同存储单元组的翻译信息是sto 以时间序列的多个集合中的红色。
    • 50. 发明授权
    • Circuit board for electro-optical device, electro-optical device, and electronic apparatus
    • 电光装置用电路板,电光装置及电子装置
    • US07554120B2
    • 2009-06-30
    • US11779579
    • 2007-07-18
    • Tatsuya Ishii
    • Tatsuya Ishii
    • H01L29/786
    • H01L27/124G02F1/136209H01L29/42384H01L29/78633H01L29/78648
    • A circuit board includes: a plurality of data lines and a plurality of scanning lines; a transistor that has a semiconductor layer and a gate electrode. The semiconductor layer includes a first junction region that is formed between the channel region and the data-line-side source/drain region, and a second junction region that is formed between the channel region and the pixel-electrode-side source/drain region, wherein the first insulator film has an elongated groove, which extends along at least one of the first junction region and the second junction region over the substrate in plan view, and the gate electrode has an inner groove portion that is provided in an extending manner from a portion thereof overlapping the channel region to at least a part inside the groove.
    • 电路板包括:多条数据线和多条扫描线; 具有半导体层和栅电极的晶体管。 半导体层包括形成在沟道区域和数据线侧源极/漏极区域之间的第一结区域,以及形成在沟道区域和像素电极侧源极/漏极区域之间的第二接合区域 其中,所述第一绝缘膜具有细长槽,所述细长槽在平面图中沿着所述基板上的所述第一接合区域和所述第二接合区域中的至少一个延伸,并且所述栅电极具有以延伸方式设置的内槽部分 从其与沟道区域重叠的部分到槽内的至少一部分。