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41. 发明授权

US6132800A Production process of color liquid crystal display device 失效
标题翻译：彩色液晶显示装置的生产工艺
公开(公告)号：US6132800A
公开(公告)日：2000-10-17
申请号：US804406
申请日：1997-02-21
申请人： Tetsuya Shimada , Shigetoshi Sugawa , Takeshi Miyazaki , Takeshi Ichikawa
发明人： Tetsuya Shimada , Shigetoshi Sugawa , Takeshi Miyazaki , Takeshi Ichikawa
IPC分类号： G02B5/20 , G02B6/44 , G02F1/1335 , G02F1/1343 , G02F1/136 , G02F1/1368 , H01L21/336 , H01L29/786 , B05D5/06
CPC分类号： G02B6/4494 , G02F1/133516
摘要： Disclosed herein is a process for producing a color liquid crystal display device, which comprises the steps of forming a plurality of switching elements on a first transparent substrate; providing a coating layer on the plural switching elements; separately applying curable inks to predetermined opening areas between the switching elements by an ink-jet system to form a color filter; forming a transparent electrode on the color filter; forming a transparent electrode on a second transparent substrate; and charging a liquid crystal into a space between the first and second transparent substrates.
摘要翻译：本发明公开了一种制造彩色液晶显示装置的方法，包括在第一透明基板上形成多个开关元件的步骤; 在所述多个开关元件上设置涂层; 通过喷墨系统将可固化油墨分别施加到开关元件之间的预定开口区域以形成滤色器; 在滤色器上形成透明电极; 在第二透明基板上形成透明电极; 并将液晶装入第一和第二透明基板之间的空间。

42. 发明授权

US6127998A Matrix substrate, liquid-crystal device incorporating the matrix substrate, and display device incorporating the liquid-crystal device 失效
标题翻译：矩阵基板，结合了矩阵基板的液晶装置以及结合了液晶装置的显示装置
公开(公告)号：US6127998A
公开(公告)日：2000-10-03
申请号：US953725
申请日：1997-10-17
申请人： Takeshi Ichikawa , Mamoru Miyawaki , Katsumi Kurematsu , Osamu Koyama
发明人： Takeshi Ichikawa , Mamoru Miyawaki , Katsumi Kurematsu , Osamu Koyama
IPC分类号： G02F1/1335 , G02F1/133 , G02F1/13357 , G02F1/1343 , G02F1/1368 , G09F9/35 , G09G3/36
CPC分类号： G09G3/3688 , G09G3/3648 , G09G3/3677 , G09G2300/0823 , G09G2310/0205 , G09G2310/0251 , G09G2310/0283 , G09G2310/0297 , G09G2320/041 , G09G2330/021
摘要： A matrix substrate comprises a plurality of pixel electrodes arrayed in a matrix pattern, a plurality of switching elements connected to the pixel electrodes, a plurality of signal lines for supplying video signals to the plurality of switching elements, a plurality of scanning lines for supplying scanning signals to the plurality of switching elements, a horizontal driving circuit for supplying the video signals to the plurality of signal lines, and a vertical driving circuit for supplying the scanning signals to the plurality of scanning lines, wherein the horizontal driving circuit is comprised of a dynamic type circuit and the vertical driving circuit is comprised of a static type circuit.
摘要翻译：矩阵基板包括以矩阵图案排列的多个像素电极，连接到像素电极的多个开关元件，用于向多个开关元件提供视频信号的多条信号线，用于提供扫描的多条扫描线信号到多个开关元件，用于将视频信号提供给多条信号线的水平驱动电路和用于将扫描信号提供给多条扫描线的垂直驱动电路，其中水平驱动电路由动态类型电路和垂直驱动电路由静态电路组成。

43. 发明授权

US5918115A Method of manufacturing a surrounding gate type MOSFET 失效
公开(公告)号：US5918115A
公开(公告)日：1999-06-29
申请号：US901936
申请日：1997-07-29
申请人： Shin Kikuchi , Mamoru Miyawaki , Genzo Monma , Hayao Ohzu , Shunsuke Inoue , Yoshio Nakamura , Takeshi Ichikawa , Osamu Ikeda , Tetsunobu Kohchi
发明人： Shin Kikuchi , Mamoru Miyawaki , Genzo Monma , Hayao Ohzu , Shunsuke Inoue , Yoshio Nakamura , Takeshi Ichikawa , Osamu Ikeda , Tetsunobu Kohchi
IPC分类号： H01L27/115 , H01L21/332
CPC分类号： H01L27/115 , H01L2924/0002
摘要： A semiconductor device including: an insulated gate type transistor having a columnar semiconductor region formed on the main side of a semiconductor substrate, a gate electrode formed on the side surface of the columnar semiconductor region while interposing a gate insulating film and main electrode regions respectively formed on and formed below the columnar semiconductor region; and a memory element which is formed on the upper main electrode region and which can be broken electrically.

44. 发明授权

US5849163A Process for formation of epitaxial film 失效
标题翻译：外延膜形成工艺
公开(公告)号：US5849163A
公开(公告)日：1998-12-15
申请号：US468233
申请日：1995-06-06
申请人： Takeshi Ichikawa , Hidemasa Mizutani
发明人： Takeshi Ichikawa , Hidemasa Mizutani
IPC分类号： C23C14/14 , C23C14/34 , C23C14/35 , C23C14/56 , C30B23/02 , C30B23/08 , H01L21/203
CPC分类号： C23C14/345 , C23C14/14 , C23C14/35 , C23C14/564 , C30B23/002 , C30B23/02 , C30B23/08 , C30B29/06 , C30B29/36
摘要： A process for forming an epitaxial film on a biased substrate by sputtering a target to which a bias voltage and a plasma-generating high-frequency power are applied, wherein the film formation is carried out in an atmosphere having H.sub.2 O, CO and CO.sub.2 partial pressures controlled at 1.0.times.10.sup.-8 Torr, with the substrate temperature maintained in the range of from 400.degree. to 700.degree. C. The epitaxial film obtained by the process has excellent interface characteristics, very low impurity contents, good crystallinity and excellent step coverage, and is suitable for application to semiconductor devices.
摘要翻译：一种通过溅射施加了偏压和等离子体产生高频功率的靶的偏置衬底上形成外延膜的方法，其中成膜在具有H 2 O，CO和CO 2分压的气氛中进行控制在1.0×10-8乇，衬底温度保持在400〜700℃的范围内。通过该方法获得的外延膜具有优异的界面特性，非常低的杂质含量，良好的结晶度和优异的阶梯覆盖率，以及适用于半导体器件。

45. 发明授权

US5466961A Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US5466961A
公开(公告)日：1995-11-14
申请号：US872295
申请日：1992-04-22
申请人： Shin Kikuchi , Mamoru Miyawaki , Genzo Monma , Hayao Ohzu , Shunsuke Inoue , Yoshio Nakamura , Takeshi Ichikawa , Osamu Ikeda , Tetsunobu Kohchi
发明人： Shin Kikuchi , Mamoru Miyawaki , Genzo Monma , Hayao Ohzu , Shunsuke Inoue , Yoshio Nakamura , Takeshi Ichikawa , Osamu Ikeda , Tetsunobu Kohchi
IPC分类号： H01L27/115 , H01L27/02 , H01L29/10
CPC分类号： H01L27/115 , H01L2924/0002
摘要： A semiconductor device including: an insulated gate type transistor having a columnar semiconductor region formed on the main side of a semiconductor substrate, a gate electrode formed on the side surface of the columnar semiconductor region while interposing a gate insulating film and main electrode regions respectively formed on and formed below the columnar semiconductor region; and a memory element which is formed on the upper main electrode region and which can be broken electrically.
摘要翻译：一种半导体器件，包括：绝缘栅型晶体管，其具有形成在半导体衬底的主侧上的柱状半导体区域，形成在柱状半导体区域的侧表面上的栅电极，同时插入栅极绝缘膜和分别形成的主电极区域形成在柱状半导体区域的下方; 以及形成在上主电极区域上并且可以被电断开的存储元件。

46. 发明授权

US5466631A Method for producing semiconductor articles 失效
标题翻译：半导体制品的制造方法
公开(公告)号：US5466631A
公开(公告)日：1995-11-14
申请号：US392685
申请日：1995-02-23
申请人： Takeshi Ichikawa , Takao Yonehara , Masaru Sakamoto , Yasuhiro Naruse , Jun Nakayama , Kenji Yamagata , Kiyofumi Sakaguchi
发明人： Takeshi Ichikawa , Takao Yonehara , Masaru Sakamoto , Yasuhiro Naruse , Jun Nakayama , Kenji Yamagata , Kiyofumi Sakaguchi
IPC分类号： H01L21/02 , H01L21/304 , H01L21/306 , H01L21/762 , H01L27/12 , H01L21/76
CPC分类号： H01L21/76264 , H01L21/30604 , H01L21/76256 , H01L21/76275 , H01L21/76283 , H01L21/76289 , Y10S148/012 , Y10S438/96 , Y10S438/977
摘要： A method for producing a semiconductor article comprises the steps of preparing a first substrate having a non-porous semiconductor layer on a porous semiconductor region, forming unevenness on the surface at the side of said semiconductor layer of said first substrate; bonding the surface of said first substrate having said unevenness formed thereon to the surface of said second substrate so as to be in contact with each other, and removing said porous semiconductor under the state that said semiconductor layer is bonded to said second substrate to thereby transfer said semiconductor layer from said first substrate onto said second substrate.
摘要翻译：一种制造半导体产品的方法包括以下步骤：在多孔半导体区域上制备具有无孔半导体层的第一衬底，在所述第一衬底的所述半导体层侧的表面上形成凹凸; 将形成有所述凹凸的所述第一基板的表面接合到所述第二基板的表面以彼此接触，并且在所述半导体层接合到所述第二基板的状态下去除所述多孔半导体，从而转移所述半导体层从所述第一衬底到所述第二衬底上。

47. 发明授权

US5361015A Electron emission element 失效
标题翻译：电子发射元件
公开(公告)号：US5361015A
公开(公告)日：1994-11-01
申请号：US011006
申请日：1993-01-29
申请人： Masahiko Okunuki , Akira Suzuki , Isamu Shimoda , Tetsuya Kaneko , Takeo Tsukamoto , Toshihiko Takeda , Takao Yonehara , Takeshi Ichikawa
发明人： Masahiko Okunuki , Akira Suzuki , Isamu Shimoda , Tetsuya Kaneko , Takeo Tsukamoto , Toshihiko Takeda , Takao Yonehara , Takeshi Ichikawa
IPC分类号： H01J1/304 , H01J3/02 , H01J9/02 , H01J31/12 , H01J7/06 , H01L21/02
CPC分类号： H01J9/025 , H01J1/3042 , H01J3/022 , H01J31/127 , H01J2201/30446
摘要： A multi type electron emission element comprises a plurality of electrodes formed on a deposition surface of an insulating material and each having a conical portion of a single crystal, an insulating layer formed on the deposition surface and having openings respectively centered on the conical portions, and a deriving electrodes, part of which is formed near at least the conical portions, the deriving electrode being formed on the insulating layer.
摘要翻译：多型电子发射元件包括形成在绝缘材料的沉积表面上并且各自具有单晶的锥形部分的多个电极，形成在沉积表面上并具有分别以锥形部分为中心的开口的绝缘层，以及导电电极，其一部分形成在至少锥形部分附近，导电电极形成在绝缘层上。

48. 发明授权

US09143247B2 Wireless communication method and apparatus 有权
标题翻译：无线通信方法及装置
公开(公告)号：US09143247B2
公开(公告)日：2015-09-22
申请号：US13479317
申请日：2012-05-24
申请人： Takeshi Ichikawa
发明人： Takeshi Ichikawa
IPC分类号： H04B17/00 , H04B17/26 , H04B17/23 , H04W24/10
CPC分类号： H04B17/26 , H04B17/23 , H04W24/10
摘要： A wireless communication method and apparatus that produce only a small amount of transmission delay even when carrier sensing is performed. Intensity indication data indicating the radio wave intensity of a received wireless signal is generated. The intensity indication data is intermittently captured and retained. An average of the retained intensity indication data is calculated. If the average is less than or equal to a threshold, a wireless transmission operation is enabled. The average is calculated with a frequency according to the frequency of capturing of the intensity indication data. The average and the threshold are compared at a frequency corresponding to the frequency of calculation of the average.
摘要翻译：即使在执行载波检测时也仅产生少量传输延迟的无线通信方法和装置。产生指示所接收的无线信号的无线电波强度的强度指示数据。间歇地捕获并保留强度指示数据。计算保留强度指示数据的平均值。如果平均值小于或等于阈值，则启用无线传输操作。平均值根据强度指示数据的拍摄频率以频率计算。在与平均值的计算频率对应的频率下对平均值和阈值进行比较。

49. 发明授权

US08538336B2 Radio LSI device and interfering wave detecting circuit 有权
标题翻译：无线电LSI装置和干扰波检测电路
公开(公告)号：US08538336B2
公开(公告)日：2013-09-17
申请号：US12619705
申请日：2009-11-17
申请人： Takeshi Ichikawa
发明人： Takeshi Ichikawa
IPC分类号： H04B1/00 , H04B1/38 , H03K9/00
CPC分类号： H04N5/4403 , H04B1/1027 , H04B1/202 , H04N21/42207 , H04N21/42221 , H04N2005/4407 , H04N2005/4426
摘要： A radio LSI device includes an interfering wave detecting circuit that receives an RSSI signal for a current transmit/receive channel. The interfering wave detecting circuit includes a field intensity determiner that determines whether or not the value of the RSSI signal is greater than a predetermined threshold value. The interfering wave detecting circuit also includes a duration counter that counts the duration of an interfering wave whose RSSI value is greater than the predetermined threshold value. The interfering wave detecting circuit also includes a duration comparator that, if the duration exceeds a duration comparative value, generates an interrupt signal. The radio LSI device changes the setting of the current transmit/receive channel in response to the interrupt signal.
摘要翻译：无线电LSI装置包括干扰波检测电路，其接收当前发送/接收信道的RSSI信号。干扰波检测电路包括确定RSSI信号的值是否大于预定阈值的场强确定器。干扰波检测电路还包括对RSSI值大于预定阈值的干扰波的持续时间进行计数的持续时间计数器。干扰波检测电路还包括持续时间比较器，如果持续时间超过持续时间比较值，则产生中断信号。无线电LSI装置响应于中断信号改变当前发送/接收信道的设置。

50. 发明授权

US08501520B2 Manufacturing method for a solid-state image sensor 有权
标题翻译：固态图像传感器的制造方法
公开(公告)号：US08501520B2
公开(公告)日：2013-08-06
申请号：US12697420
申请日：2010-02-01
申请人： Katsunori Hirota , Akira Ohtani , Kazuaki Tashiro , Yusuke Onuki , Takanori Watanabe , Takeshi Ichikawa
发明人： Katsunori Hirota , Akira Ohtani , Kazuaki Tashiro , Yusuke Onuki , Takanori Watanabe , Takeshi Ichikawa
IPC分类号： H01L51/40
CPC分类号： H01L27/14689 , H01L21/26513 , H01L21/324 , H01L27/14621 , H01L27/14643 , H01L27/14698
摘要： A manufacturing method for a solid-state image sensor, the method comprises the steps of: forming a charge storage region in a photoelectric converting unit by implanting a semiconductor substrate with ions of an impurity of a first conductivity type, using a first mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); forming a surface region of the charge storage region by implanting the semiconductor substrate with ions of an impurity of a second conductivity type, using a second a mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); and forming an antireflection film that covers the photoelectric converting unit at a temperature of less than 800° C., after the step of forming the surface region, in this order.
摘要翻译：一种固态图像传感器的制造方法，该方法包括以下步骤：利用第一掩模，通过用第一导电类型的杂质的离子注入半导体衬底，在光电转换单元中形成电荷存储区域; 通过RTA（快速热退火）在不低于800℃且不超过1200℃的温度下加热半导体衬底; 通过使用第二掩模将具有第二导电类型的杂质的离子注入半导体衬底来形成电荷存储区域的表面区域; 通过RTA（快速热退火）在不低于800℃且不超过1200℃的温度下加热半导体衬底; 以及在形成表面区域的步骤之后依次形成在小于800℃的温度下覆盖光电转换单元的抗反射膜。

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