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41. 发明申请

US20050206271A1 Potassium niobate deposited body, method for manufacturing the same, piezoelectric thin film resonator, frequency filter, frequency oscillator, electronic circuit, and electronic apparatus 有权
标题翻译：铌酸钾沉积体，其制造方法，压电薄膜谐振器，频率滤波器，频率振荡器，电子电路和电子设备
公开(公告)号：US20050206271A1
公开(公告)日：2005-09-22
申请号：US11079241
申请日：2005-03-14
申请人： Takamitsu Higuchi , Setsuya Iwashita , Hiromu Miyazawa
发明人： Takamitsu Higuchi , Setsuya Iwashita , Hiromu Miyazawa
IPC分类号： C30B29/30 , C23C14/08 , H01L41/08 , H01L41/083 , H01L41/09 , H01L41/18 , H01L41/22 , H01L41/313 , H01L41/316 , H01L41/319 , H01L41/337 , H01L41/39 , H03B5/32 , H03H3/02 , H03H9/02 , H03H9/17
CPC分类号： H03H9/174 , H01L41/1873 , H01L41/319 , H03B5/32 , H03H9/02031 , Y10T29/49126 , Y10T29/4913 , Y10T29/49147 , Y10T29/49149 , Y10T29/49155
摘要： A potassium niobate deposited body includes a substrate, an electrode layer formed above the substrate, and a potassium niobate layer formed above the electrode layer. The potassium niobate layer can include a domain that epitaxially grows in a (110) or (001) orientation, when a lattice constant of orthorhombic potassium niobate is 21/2 c
摘要翻译：铌酸钾沉积体包括衬底，形成在衬底上方的电极层和形成在电极层上方的铌酸钾层。当正交铌酸钾的晶格常数为2×2/2 c

42. 发明申请

US20050200235A1 Potassium niobate deposited body, method for manufacturing the same, surface acoustic wave element, frequency filter, frequency oscillator, electronic circuit, and electronic apparatus 审中-公开
标题翻译：铌酸钾沉积体，其制造方法，表面声波元件，频率滤波器，频率振荡器，电子电路和电子设备
公开(公告)号：US20050200235A1
公开(公告)日：2005-09-15
申请号：US11075153
申请日：2005-03-08
申请人： Takamitsu Higuchi , Setsuya Iwashita , Hiromu Miyazawa
发明人： Takamitsu Higuchi , Setsuya Iwashita , Hiromu Miyazawa
IPC分类号： C30B29/30 , H01L41/09 , H01L41/18 , H01L41/311 , H01L41/316 , H01L41/319 , H01L41/337 , H01L41/39 , H03H3/08 , H03H9/02 , H03H9/05 , H03H9/145 , H03H9/25
CPC分类号： H03H9/0542 , H03H3/08 , H03H9/02543 , H03H9/02574 , H03H9/25
摘要： A potassium niobate deposited body includes a sapphire substrate, and a potassium niobate layer formed above the sapphire substrate. The potassium niobate deposited body further includes a buffer layer consisting of a metal oxide formed above the sapphire substrate, wherein the potassium niobate layer is formed above the buffer layer.
摘要翻译：铌酸钾沉积体包括蓝宝石衬底和形成在蓝宝石衬底之上的铌酸钾层。铌酸钾沉积体还包括由蓝宝石衬底上形成的金属氧化物构成的缓冲层，其中铌酸钾层形成在缓冲层上。

43. 发明授权

US06930339B2 Ferroelectric memory and electronic apparatus 失效
标题翻译：铁电存储器和电子设备
公开(公告)号：US06930339B2
公开(公告)日：2005-08-16
申请号：US10105002
申请日：2002-03-22
申请人： Takamitsu Higuchi , Setsuya Iwashita , Hiromu Miyazawa , Kazumasa Hasegawa , Eiji Natori
发明人： Takamitsu Higuchi , Setsuya Iwashita , Hiromu Miyazawa , Kazumasa Hasegawa , Eiji Natori
IPC分类号： G11C11/22 , H01L21/8246 , H01L27/105 , H01L31/119
CPC分类号： H01L27/105
摘要： The present invention relates to a ferroelectric memory having a matrix-type memory cell array which has a superior degree of integration, in which the angularity of the ferroelectric layer's hysteresis curve is improved, the production yield is increased and costs are reduced.A ferroelectric memory having improved angularity in the hysteresis curve, and superior memory characteristics, production yield and costs is realized as follows. Namely, a peripheral circuit chip and a memory cell array chip are engaged onto an inexpensive assembly base 300 such as glass or plastic. In memory cell array chip 200, a ferroelectric layer is made to undergo epitaxial growth on to a Si single crystal via a buffer layer and first signal electrode. As a result, a ferroelectric memory can be realized which has improved angularity in the hysteresis curve and superior memory characteristics, production yield, and cost.
摘要翻译：本发明涉及一种具有优异的集成度的矩阵式存储单元阵列的铁电存储器，其中提高了铁电层磁滞曲线的角度，提高了生产成本并降低了成本。具有改善的滞后曲线的角度，优异的存储特性，生产成本和成本的铁电存储器实现如下。也就是说，外围电路芯片和存储单元阵列芯片被接合到诸如玻璃或塑料的便宜的组装基座300上。在存储单元阵列芯片200中，使铁电体层通过缓冲层和第一信号电极进行Si单晶的外延生长。结果，可以实现具有改善的滞后曲线的角度和优异的记忆特性，产量和成本的铁电存储器。

44. 发明申请

US20050155202A1 Piezoelectric device, liquid jet head, and methods for manufacturing the same, and thin film forming apparatus 有权
标题翻译：压电元件，液体喷射头及其制造方法以及薄膜形成装置
公开(公告)号：US20050155202A1
公开(公告)日：2005-07-21
申请号：US11001651
申请日：2004-12-01
申请人： Takamitsu Higuchi , Setsuya Iwashita , Hiromu Miyazawa
发明人： Takamitsu Higuchi , Setsuya Iwashita , Hiromu Miyazawa
IPC分类号： B41J2/045 , B41J2/055 , B41J2/135 , B41J2/14 , B41J2/16 , H01L41/08 , H01L41/09 , H01L41/18 , H01L41/187 , H01L41/22 , H01L41/319 , H02N2/00 , H04R17/00 , H04R31/00
CPC分类号： B41J2/161 , B41J2/1623 , B41J2/1628 , B41J2/1629 , B41J2/1634 , B41J2/1645 , B41J2/1646 , H01L41/1876 , H01L41/316 , H04R17/00 , H04R31/00 , Y10T29/42 , Y10T29/435 , Y10T29/49155 , Y10T29/49401
摘要： A method is provided for effectively manufacturing a piezoelectric device equipped with a piezoelectric film with a crystal orientation that is aligned in a desired direction. An interlayer that is bi-axially oriented is formed on a surface of a substrate by conducting ion beam assisted laser ablation in a disposition in which a center axis of an ablation plume to be irradiated is angled at approximately 55 degrees to a direction normal to the substrate. A lower electrode is formed on the interlayer. A piezoelectric film is formed on the lower electrode. An upper electrode is formed on the piezoelectric film. The lower electrode and the piezoelectric film are formed by epitaxial growth.
摘要翻译：提供了一种有效地制造具有在期望方向上排列的晶体取向的压电薄膜的压电装置的方法。通过在衬底的表面上通过导电离子束辅助激光烧蚀形成沿轴向取向的中间层，其中待照射的消融羽流的中心轴线与垂直于该辐射的方向成大约55度基质。在中间层上形成下电极。在下电极上形成压电薄膜。在压电膜上形成上电极。下电极和压电膜通过外延生长形成。

45. 发明申请

US20050076829A1 Method of manufacturing potassium niobate single crystal thin film, surface acoustic wave element, frequency filter, frequency oscillator, electronic circuit, and electronic apparatus 有权
标题翻译：铌酸钾单晶薄膜，表面声波元件，频率滤波器，频率振荡器，电子电路和电子设备的制造方法
公开(公告)号：US20050076829A1
公开(公告)日：2005-04-14
申请号：US10916208
申请日：2004-08-11
申请人： Takamitsu Higuchi , Setsuya Iwashita , Hiromu Miyazawa
发明人： Takamitsu Higuchi , Setsuya Iwashita , Hiromu Miyazawa
IPC分类号： C30B19/00 , C30B19/12 , H03H3/08 , H03H9/02 , H03H9/05 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： H03H9/02543 , C30B19/00 , C30B19/12 , C30B29/30 , H03H3/08 , H03H9/02574 , H03H9/0542
摘要： A method of manufacturing KNbO3 single crystal thin film having single-phase high quality and excellent morphology on each of single crystal substrates. A surface acoustic wave element, frequency filter, frequency oscillator, electronics circuit, and electronic device employ the thin film manufactured by the method, and have high k2, and are wideband, reduced in size and economical in power consumption. A plasma plume containing K, Nb, and O in the range 0.5≦x≦xE is supplied to a substrate, where x is a mole ratio of niobium (Nb) to potassium (K) in KxNb1-xOy, and xE is a mole composition ratio at the eutectic point for KNbO3 and 3K2O.Nb2O5 under a predetermined oxygen partial pressure. Maintaining the temperature Ts of the substrate in the range TE≦Ts≦Tm where TE represents the temperature at the eutectic point and Tm represents a complete melting temperature, the KNbO3 single crystal is precipitated from the KxNb1-xOy deposited on the substrate.
摘要翻译：在单晶基板上制造具有单相高质量和优异形态的KNbO3单晶薄膜的方法。表面声波元件，频率滤波器，频率振荡器，电子电路和电子器件采用通过该方法制造的薄膜，并且具有高k <2>，并且具有宽带，尺寸减小并且功耗经济。将含有0.5 <= X＆LE; XE的K，Nb和O的等离子体羽流供给到基板，其中x是KxNb1-xOy中铌（Nb）与钾（K）的摩尔比，xE是在预定的氧分压下在共晶点处的KNbO 3和3K 2 O·Nb 2 O 5的摩尔组成比。保持基板的温度Ts在TE <= Ts <= Tm范围内，其中TE表示共晶点处的温度，Tm表示完全熔融温度，KNbO3单晶从沉积在基板上的KxNb1-xOy沉淀。

46. 发明申请

US20050018019A1 Piezoelectric element, ink jet recording head, ink jet printer, surface acoustic wave element, frequency-dependent filter, oscillator, electronic circuit, thin film piezoelectric resonator, and electronic apparatus 有权
标题翻译：压电元件，喷墨记录头，喷墨打印机，表面声波元件，频率依赖滤波器，振荡器，电子电路，薄膜压电谐振器和电子设备
公开(公告)号：US20050018019A1
公开(公告)日：2005-01-27
申请号：US10866721
申请日：2004-06-15
申请人： Hiromu Miyazawa , Takamitsu Higuchi , Setsuya Iwashita
发明人： Hiromu Miyazawa , Takamitsu Higuchi , Setsuya Iwashita
IPC分类号： B41J2/045 , B41J2/055 , B41J2/135 , B41J2/14 , H01L41/08 , H01L41/09 , H01L41/18 , H01L41/22 , H01L41/29 , H01L41/319 , H01L41/39 , H02N2/00 , H03H3/02 , H03H3/08 , H03H9/02 , H03H9/05 , H03H9/17 , H03H9/25
CPC分类号： B41J2/14233 , H01L41/0478 , H01L41/0815 , H01L41/1878 , H01L41/316 , H01L41/319 , H03H3/02 , H03H9/02094 , H03H9/02133 , H03H9/0542 , H03H9/172 , H03H9/173 , H03H9/174
摘要： A piezoelectric element includes a piezoelectric material film made of BiFeO3. The piezoelectric element can be used in an ink jet recording head which includes a cavity with a variable internal volume, wherein the internal volume of the cavity changes depending on deformation of the piezoelectric material film included in the piezoelectric element.
摘要翻译：压电元件包括由BiFeO 3制成的压电材料膜。压电元件可以用在包括具有可变内部体积的空腔的喷墨记录头中，其中腔的内部体积根据包含在压电元件中的压电材料膜的变形而改变。

47. 发明授权

US06720599B2 Ferroelectric memory and electronic apparatus 失效
标题翻译：铁电存储器和电子设备
公开(公告)号：US06720599B2
公开(公告)日：2004-04-13
申请号：US10105001
申请日：2002-03-22
申请人： Takamitsu Higuchi , Setsuya Iwashita , Hiromu Miyazawa
发明人： Takamitsu Higuchi , Setsuya Iwashita , Hiromu Miyazawa
IPC分类号： H01L31119
CPC分类号： G11C11/22
摘要： In case capacitor-type ferroelectric memory is formed by using SrB2Ta2O9 having superior fatigue resistance for ferroelectric layer, non-orientation layer is inferior in angularity, and SBT of orientation layer is subject to be oriented to c-axis orientation, polarization moment of a-axis direction was not effectively used, on Si single crystal substrate, a buffer layer and a bottom electrode layer composed of conductive oxide having perovskite structure are grown in epitaxially, furthermore the epitaxial growth of ferroelectric layer composed of SBT is performed with slanting c-axis to the substrate by 45 to 55 degrees.
摘要翻译：在通过使用对于铁电层具有优异的耐疲劳性的SrB 2 Ta 2 O 9形成电容器型铁电存储器的情况下，非取向层的角度差，取向层的SBT取向为c轴取向，在Si单晶衬底上，由外延生长了由具有钙钛矿结构的导电氧化物构成的缓冲层和底部电极层，此外，由SBT构成的铁电层的外延生长以斜向c轴 45〜55度。

48. 发明授权

US07707701B2 Method for manufacturing a piezoelectric element 有权
标题翻译：压电元件的制造方法
公开(公告)号：US07707701B2
公开(公告)日：2010-05-04
申请号：US11358836
申请日：2006-02-20
申请人： Setsuya Iwashita , Koji Ohashi , Takamitsu Higuchi
发明人： Setsuya Iwashita , Koji Ohashi , Takamitsu Higuchi
IPC分类号： H01L41/22 , H01L41/00 , B41J2/045
CPC分类号： H01L41/319 , B41J2/161 , B41J2/1623 , B41J2/1629 , B41J2/1646 , H01L41/0477 , H01L41/0478 , H01L41/0973 , H01L41/1871 , H01L41/1873 , H01L41/1875 , H01L41/29 , Y10T29/42 , Y10T29/43 , Y10T29/435 , Y10T29/49005 , Y10T29/49155 , Y10T29/49401
摘要： A method for manufacturing a piezoelectric element includes the steps of forming a first electrode above a substrate, forming above the first electrode a piezoelectric layer composed of a piezoelectric material having a perovskite structure, and forming a second electrode above the piezoelectric layer, wherein the step of forming the first electrode includes forming a lanthanum nickelate layer that is oriented to a cubic (100) by a sputter method, and a ratio of nickel to lanthanum (Ni/La) in a target used for the sputter method is greater than 1 but smaller than 1.5.
摘要翻译：一种制造压电元件的方法包括以下步骤：在基板上形成第一电极，在第一电极上方形成由具有钙钛矿结构的压电材料构成的压电层，并在压电层上方形成第二电极，其中步骤形成第一电极包括通过溅射法形成定向为立方（100）的镍酸镧层，并且用于溅射法的靶中的镍与镧（Ni / La）的比例大于1，但是小于1.5。

49. 发明授权

US07268472B2 Piezoelectric device, liquid jetting head, ferroelectric device, electronic device and methods for manufacturing these devices 失效
标题翻译：压电元件，液体喷射头，铁电元件，电子器件及其制造方法
公开(公告)号：US07268472B2
公开(公告)日：2007-09-11
申请号：US10705251
申请日：2003-11-12
申请人： Takamitsu Higuchi , Setsuya Iwashita , Hiromu Miyazawa , Koji Sumi , Masami Murai , Maki Ito , Li Xin-Shan
发明人： Takamitsu Higuchi , Setsuya Iwashita , Hiromu Miyazawa , Koji Sumi , Masami Murai , Maki Ito , Li Xin-Shan
IPC分类号： H01L41/047 , H01L41/22
CPC分类号： H01L41/04 , B41J2/161 , B41J2/1623 , B41J2/1628 , B41J2/1629 , B41J2/1634 , B41J2/1642 , B41J2/1643 , B41J2/1645 , B41J2/1646 , H01L21/31691 , H01L41/0973 , H01L41/316
摘要： An intermediate film (15, 12, 53) is formed on a substrate (11, 52), a bottom electrode (13, 542) is formed on top of this intermediate film, a ferroelectric film (24) or piezoelectric film (543) is formed on top of this bottom electrode by an ion beam assist method, and a top electrode (25, 541) is formed on top of this ferroelectric film or piezoelectric film. The ferroelectric film or piezoelectric film is formed by PZT, BST or a relaxer material. As a result of the use of an ion beam assist method in the formation of any one of the intermediate film, bottom electrode, ferroelectric film or piezoelectric film, a piezoelectric device or ferroelectric device which has a piezoelectric film or ferroelectric film with an in-plane orientation can be manufactured with good efficiency.
摘要翻译：在基板（11,52）上形成中间膜（15,12,53），在该中间膜的顶部，铁电体膜（24）或压电膜（543）上形成有底部电极（13,542）通过离子束辅助法形成在该底部电极的顶部上，并且在该铁电体膜或压电膜的顶部上形成顶部电极（25,541）。铁电体膜或压电膜由PZT，BST或松弛材料形成。通过使用离子束辅助方法来形成中间膜，底部电极，铁电体膜或压电膜中的任一个的结果，具有压电膜或铁电体膜的压电器件或铁电体器件，可以以高效率制造平面取向。

50. 发明授权

US07247551B2 Substrate for electronic device, method for manufacturing substrate for electronic device, and electronic device 失效
标题翻译：电子设备用基板，电子设备用基板的制造方法以及电子设备
公开(公告)号：US07247551B2
公开(公告)日：2007-07-24
申请号：US10968957
申请日：2004-10-21
申请人： Takamitsu Higuchi , Setsuya Iwashita , Hiromu Miyazawa
发明人： Takamitsu Higuchi , Setsuya Iwashita , Hiromu Miyazawa
IPC分类号： H01L21/44
CPC分类号： C30B23/02 , C30B29/24 , C30B29/32 , H01L21/02197 , H01L21/02266 , H01L21/02304 , H01L21/31691 , H01L28/55 , H01L28/60 , H01L29/045 , H01L41/316
摘要： The invention provides a substrate for an electronic device including a conductive oxide layer which is formed by epitaxial growth with cubic crystal (100) orientation or pseudo-cubic crystal (100) orientation and which contains a metal oxide having a perovskite structure, a method for manufacturing a substrate for an electronic device, and an electronic device provided with such a substrate for an electronic device. A substrate for an electronic device includes a Si substrate, a buffer layer which is formed by epitaxial growth on the Si substrate and which contains a metal oxide having a NaCl structure, and a conductive oxide layer which is formed by epitaxial growth with cubic crystal (100) orientation or pseudo-cubic crystal (100) orientation on the buffer layer and which contains a metal oxide having a perovskite structure. The Si substrate is preferably a (100) substrate or a (110) substrate from which a natural oxidation film is not removed. The buffer layer preferably has an average thickness of 10 nm or less.
摘要翻译：本发明提供了一种电子器件用基板，其包括通过外延生长而具有立方晶（100）取向或假立方晶体（100）取向形成的导电氧化物层，并且其包含具有钙钛矿结构的金属氧化物，制造用于电子设备的基板，以及设置有这种电子设备用基板的电子设备。用于电子器件的衬底包括Si衬底，通过在Si衬底上外延生长并且含有具有NaCl结构的金属氧化物形成的缓冲层和通过用立方晶体外延生长形成的导电氧化物层（ 100）取向或假立方晶体（100）取向，并且其包含具有钙钛矿结构的金属氧化物。 Si衬底优选是不去除天然氧化膜的（100）衬底或（110）衬底。缓冲层的平均厚度优选为10nm以下。

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