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41. 发明申请

US20050048674A1 Method and system for providing a magnetic element including passivation structures 失效
标题翻译：用于提供包括钝化结构的磁性元件的方法和系统
公开(公告)号：US20050048674A1
公开(公告)日：2005-03-03
申请号：US10781479
申请日：2004-02-17
申请人： Xizeng Shi , Po-Kang Wang , Yimin Guo , Tai Min
发明人： Xizeng Shi , Po-Kang Wang , Yimin Guo , Tai Min
IPC分类号： H01F20060101 , H01L21/00 , H01L21/8246 , H01L27/22 , H01L29/82 , H01L43/00 , H01L43/08
CPC分类号： H01L27/228 , B82Y10/00 , H01L43/08
摘要： A method and system for providing a magnetic element and a magnetic memory using the magnetic element are disclosed. The magnetic memory includes a plurality of magnetic elements. The method and system include providing a plurality of layers and a passivation layer for each of the plurality of magnetic elements. A portion of the layers in the magnetic element includes at least one magnetic layer. The plurality of layers also has a top and a plurality of sides. The passivation layer covers at least a portion of the plurality of sides.
摘要翻译：公开了一种使用该磁性元件提供磁性元件和磁性存储器的方法和系统。磁存储器包括多个磁性元件。该方法和系统包括为多个磁性元件中的每一个提供多个层和钝化层。磁性元件中的一部分层包括至少一个磁性层。多个层还具有顶部和多个侧面。钝化层覆盖多个边的至少一部分。

42. 发明授权

US06760966B2 Process of manufacturing a side reading reduced GMR for high track density 失效
标题翻译：制造侧读的过程降低了高磁轨密度的GMR
公开(公告)号：US06760966B2
公开(公告)日：2004-07-13
申请号：US10135097
申请日：2002-04-30
申请人： Po Kang Wang , Moris Dovek , Jibin Geng , Tai Min
发明人： Po Kang Wang , Moris Dovek , Jibin Geng , Tai Min
IPC分类号： G11B5147
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , C21D1/04 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3268 , H01F41/302 , Y10T29/49032 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044
摘要： As track density requirements for disk drives have grown more aggressive, GMR devices have been pushed to narrower track widths to match the track pitch of the drive width. Narrower track widths degrade stability, cause amplitude loss, due to the field originating from the hard bias structure, and side reading. This problem has been overcome in a process of manufacturing a device by adding an additional layer of soft magnetic material above the hard bias layers. The added layer provides flux closure to the hard bias layers thereby preventing flux leakage into the gap region. A non-magnetic layer must be included to prevent exchange coupling to the hard bias layers. In at least one embodiment the conductive leads are used to accomplish this.
摘要翻译：随着磁盘驱动器的磁道密度要求越来越高，GMR器件已被推到更窄的磁道宽度以匹配驱动器宽度的磁道间距。较窄的轨道宽度会降低稳定性，导致振幅损失，这是由于源自硬偏置结构的场和侧读。在通过在硬偏压层上方添加附加的软磁性材料层来制造器件的过程已经克服了这个问题。添加的层向硬偏置层提供磁通闭合，从而防止磁通量泄漏到间隙区域中。必须包括非磁性层以防止与硬偏置层的交换耦合。在至少一个实施例中，导电引线用于实现这一点。

43. 发明授权

US06385017B1 Continuous free layer spin valve sensor with patterned exchange underlayer stabilization 失效
标题翻译：连续自由层旋转阀传感器，具有图案交换底层稳定性
公开(公告)号：US06385017B1
公开(公告)日：2002-05-07
申请号：US09408492
申请日：1999-09-30
申请人： Tai Min , Po-Kang Wang , Moris Musa Dover
发明人： Tai Min , Po-Kang Wang , Moris Musa Dover
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , Y10T29/49032 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： A spin valve device comprises a free layer, a spacer layer, a pinned layer, an antiferromagnetic layer, and a patterned underlayer that includes a magnetic material for providing trackwidth and longitudinal bias. The patterned underlayer can comprise a buffer layer, an antiferromagnetic layer and a ferromagnetic layer. Alternatively, the patterned underlayer can comprises a buffer layer, a chromium layer and a hard biasing, permanent magnetic layer which provides trackwidth and longitudinal bias. A lower conductor can be located on the underlayer.
摘要翻译：自旋阀装置包括自由层，间隔层，钉扎层，反铁磁层和图案化的底层，其包括用于提供轨道宽度和纵向偏置的磁性材料。图案化的底层可以包括缓冲层，反铁磁层和铁磁层。或者，图案化的底层可以包括提供轨道宽度和纵向偏置的缓冲层，铬层和硬偏置永磁体层。下导体可以位于底层上。

44. 发明授权

US6136166A Apparatus for producing a uniform magnetic field over a large surface area of a wafer 失效
标题翻译：用于在晶片的大表面积上产生均匀磁场的装置
公开(公告)号：US6136166A
公开(公告)日：2000-10-24
申请号：US49222
申请日：1998-03-27
申请人： Yong Shen , Tai Min , Yiming Huai
发明人： Yong Shen , Tai Min , Yiming Huai
IPC分类号： C23C14/35 , H01J37/34 , C23C14/34
CPC分类号： H01J37/3266 , C23C14/351 , H01J37/3402
摘要： An apparatus for producing in a deposition system an aligned uniform magnetic field across a workpiece or a wafer having a large surface area includes spaced flux guides which are formed with tapered sections that narrow towards the central region of the wafer. Magnetic members which may be permanent magnets or electromagnets are disposed close to the wafer and co-act with the flux guides to achieve the desired uniform magnetic field. In this way, thin films deposited within the deposition system are formed with uniform thickness and magnetic properties.
摘要翻译：用于在沉积系统中制造跨越具有大表面积的工件或晶片的对准的均匀磁场的装置包括形成有朝向晶片的中心区域缩小的锥形部分的间隔的磁通引导件。可以是永磁体或电磁体的磁性构件设置在晶片附近并与磁通引导件共同作用以实现期望的均匀磁场。以这种方式，沉积在沉积系统内的薄膜形成均匀的厚度和磁性。

45. 发明授权

US08385020B2 Modified shield design to eliminate the far-field WATE problem 有权
标题翻译：改良屏蔽设计，消除远场WATE问题
公开(公告)号：US08385020B2
公开(公告)日：2013-02-26
申请号：US12927797
申请日：2010-11-24
申请人： Tai Min
发明人： Tai Min
IPC分类号： G11B5/127
CPC分类号： G11B5/1278 , G11B5/3116
摘要： A shield design for a magnetic write head is described that eliminates the far-field WATE problem while still maintaining side shielding ability. This is achieved by moving all but the central sections of the three shields (LS, SS, and WS) and, optionally, the top yoke a short distance further away from the recording medium than the ABS.
摘要翻译：描述了用于磁写头的屏蔽设计，其在保持侧屏蔽能力的同时消除了远场WATE问题。这通过移动三个屏蔽件（LS，SS和WS）中的所有中心部分，并且可选地将顶部磁轭移动到比ABS更远离记录介质的距离处。

46. 发明授权

US07715224B2 MRAM with enhanced programming margin 有权
标题翻译： MRAM具有增强的编程余量
公开(公告)号：US07715224B2
公开(公告)日：2010-05-11
申请号：US11787330
申请日：2007-04-16
申请人： Tai Min , Po Kang Wang
发明人： Tai Min , Po Kang Wang
IPC分类号： G11C11/00 , G11C11/14 , G11C11/15
CPC分类号： G11C11/16
摘要： An MRAM that is not subject to accidental writing of half-selected memory elements is described, together with a method for its manufacture. The key features of this MRAM are a C-shaped memory element used in conjunction with a segmented bit line architecture.
摘要翻译：描述了不会偶然写入半选择的存储元件的MRAM及其制造方法。该MRAM的主要特征是与分段位线结构一起使用的C形存储元件。

47. 发明授权

US07696548B2 MRAM with super-paramagnetic sensing layer 有权
标题翻译： MRAM具有超顺磁感应层
公开(公告)号：US07696548B2
公开(公告)日：2010-04-13
申请号：US11200380
申请日：2005-08-09
申请人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
发明人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
IPC分类号： H01L29/94
CPC分类号： H01L43/08
摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.
摘要翻译：公开了一种MRAM，其具有由沿第一轴的磁化方向的铁磁层，超顺磁性（SP）自由层和在它们之间形成的绝缘层构成的MTJ。 SP自由层具有在没有外部场的情况下基本为零的残余磁化，并且其中磁化大致与外部场成正比，直到达到饱和值。在一个实施例中，单独的存储层形成在MTJ的上方，下方或附近，并且具有沿其易于轴线平行于第一轴线的磁化方向的单轴各向异性。在第二实施例中，存储层形成在MTJ内的非磁性导电间隔层上，并与MTJ同时构图。 SP自由层可以是CoFeB的多层或层压层。存储层可以具有SyAP配置和层压结构。

48. 发明申请

US20090096043A1 MRAM with means of controlling magnetic anisotropy 有权
标题翻译： MRAM具有控制磁各向异性的方法
公开(公告)号：US20090096043A1
公开(公告)日：2009-04-16
申请号：US11973751
申请日：2007-10-10
申请人： Tai Min , Po Kang Wang
发明人： Tai Min , Po Kang Wang
IPC分类号： H01L43/08 , H01L43/12
CPC分类号： H01L43/08 , G11C11/1675 , H01L43/12
摘要： We describe the manufacturing process for and structure of a CPP MTJ MRAM unit cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The strength of the switching field, Hs of the cell is controlled by the magnetic anisotropy of the cell which, in turn, is controlled by a combination of the shape anisotropy and the stress and magnetostriction of the cell free layer. The coefficient of magnetostriction of the free layer can be adjusted by methods such as adding Nb or Hf to alloys of Ni, Fe, Co and B or by forming the free layer as a lamination of layers having different values of their coefficients of magnetostriction. Thus, by tuning the coefficient of magnetostriction of the cell free layer it is possible to produce a switching field of sufficient magnitude to render the cell thermally stable while maintaining a desirable switching current.
摘要翻译：我们描述了使用自旋角动量转移作为改变自由层的磁矩方向的机制的CPP MTJ MRAM单元的制造过程和结构。开关场的强度，电池的Hs由电池的磁各向异性控制，电池的磁各向异性又由形状各向异性和无电解层的应力和磁致伸缩的组合控制。自由层的磁致伸缩系数可以通过添加Nb，Hf等Ni，Fe，Co，B的合金的方法来进行，也可以通过形成自由层作为其磁致伸缩系数不同的层的叠层来进行。因此，通过调谐无电解层的磁致伸缩系数，可以产生足够大的开关场，使电池热稳定，同时保持理想的开关电流。

49. 发明授权

US07443707B2 Magnetic random access memory array with free layer locking mechanism and method of its use 失效
标题翻译：磁性随机存取存储阵列具有自由层锁定机制及其使用方法
公开(公告)号：US07443707B2
公开(公告)日：2008-10-28
申请号：US11732073
申请日：2007-04-02
申请人： Yimin Guo , Po-Kang Wang , Xizeng Shi , Tai Min
发明人： Yimin Guo , Po-Kang Wang , Xizeng Shi , Tai Min
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A method of using an MTJ MRAM cell element having two magnetization states of greater and lesser stability. During switching, the free layer is first placed in the less stable state by a word line current, so that a small bit line current can switch its magnetization direction. After switching, the state reverts to its more stable form as a result of magnetostatic interaction with a SAL (soft adjacent layer), which is a layer of soft magnetic material formed on an adjacent current carrying line, which prevents it from being accidentally rewritten when it is not actually selected and also provides stability against thermal agitation.
摘要翻译：一种使用具有较高和较小稳定性的两种磁化状态的MTJ MRAM单元元件的方法。在切换期间，自由层首先通过字线电流处于较不稳定的状态，使得小的位线电流可以切换其磁化方向。在切换之后，由于与在相邻的载流线上形成的软磁材料层的SAL（软相邻层）的静磁相互作用的结果，状态恢复到更稳定的形式，这防止了在相邻的载流线上形成的软磁材料层它实际上并没有被选中，也提供了抗热搅拌的稳定性。

50. 发明申请

US20080160641A1 Multi-state thermally assisted storage 有权
标题翻译：多状态热辅助存储
公开(公告)号：US20080160641A1
公开(公告)日：2008-07-03
申请号：US12012576
申请日：2008-02-04
申请人： Tai Min , Po-Kang Wang
发明人： Tai Min , Po-Kang Wang
IPC分类号： H01L21/00
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/161 , G11C11/1675 , G11C11/5607
摘要： A process for manufacturing a random access memory cell, that is capable of storing multiple information states in a single physical bit, is described. The basic structure combines a conventional MTJ with a reference stack that is magnetostatically coupled to the MTJ. The MTJ is read in the usual way but data is written and stored in the reference stack. Through use of two bit lines, the direction of magnetization of the free layer can be changed in small increments each unique direction representing a different information state.
摘要翻译：描述了能够在单个物理位中存储多个信息状态的随机存取存储器单元的制造过程。基本结构将传统的MTJ与静磁耦合到MTJ的参考堆叠相结合。 MTJ以通常的方式读取，但是数据被写入并存储在参考堆栈中。通过使用两个位线，自由层的磁化方向可以以小的增量改变每个独特的方向代表不同的信息状态。

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