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41. 发明公开

EP0866143A4 HIGH-STRENGTH, HIGH-TOUGHNESS ALUMINUM ALLOY AND PROCESS FOR PREPARING THE SAME 失效
标题翻译：高强度，高耐热铝合金和方法及其
公开(公告)号：EP0866143A4
公开(公告)日：1999-09-29
申请号：EP97939190
申请日：1997-09-05
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： HATTORI HISAO , KAJI TOSHIHIKO , HASHIKURA MANABU , TAKANO YOSHISHIGE
IPC分类号： C22F1/00 , C22C1/04 , C22C21/00 , C22C33/00 , C22C38/40 , C22C45/08 , C22F1/04 , B22F9/08
CPC分类号： C22C21/00 , C22C33/003 , C22C38/40 , C22C45/08
摘要： A process for preparing an aluminum alloy which can be produced on a commercial scale and has higher strength and toughness than the conventional aluminum alloys. The alloy comprises an alpha -aluminum phase comprising grains having an average diameter of 60 to 1000 nm and a phase of two or more intermetallic compounds comprising grains having an average diameter of 20 to 2000 nm, and the grains of the intermetallic compound are dispersed so that the connection between the intermetallic compound grains is intermittent.

42. 发明专利

JPH1112672A ALUMINUM ALLOY WITH HIGH TOUGHNESS AND HIGH HEAT RESISTANCE, AND ITS MANUFACTURE 失效
公开(公告)号：JPH1112672A
公开(公告)日：1999-01-19
申请号：JP11510998
申请日：1998-04-24
申请人： SUMITOMO ELECTRIC INDUSTRIES , JAPAN RES DEV CORP
发明人： HASHIKURA MANABU , HATTORI HISAO , KAJI TOSHIHIKO , KOUNO YOSHIE
IPC分类号： C22F1/00 , B22F9/08 , C22C1/04 , C22C21/00 , C22F1/04
摘要： PROBLEM TO BE SOLVED: To provide an aluminum alloy, capable of industrial production and combining toughness higher than heretofore with heat resistance also higher than heretofore, and its manufacture. SOLUTION: The metallic structure, after heating treatment for an aluminum (Al)-base supersaturated solid solution in which a transition metal element and a rare earth element are allowed to enter into solid solution, is a modulated structure in which an intermetallic compound 1 is precipitated into network state in a matrix composed of aluminum(Al) 2. The intermetallic compound 1 precipitated in the aluminum(Al) matrix is in a network state of 10 to 500 nm width (δ), and the spacing (λ) between nets of the network is regulated to 10 to 100 nm.

43. 发明专利

JPH065593A MANUFACTURE OF MULTILAYER INTERCONNECTION SUBSTRATE 失效
公开(公告)号：JPH065593A
公开(公告)日：1994-01-14
申请号：JP1751793
申请日：1993-02-04
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： HATTORI HISAO , IHARA HIROHIKO , YOSHINO KAN , YAMANAKA SEISAKU
IPC分类号： H01L21/3205 , H01L21/48 , H01L21/768 , H01L23/12 , H01L23/29 , H01L23/31 , H01L23/522 , H01L23/538 , H05K1/02 , H05K1/03 , H05K3/46 , H01L21/90
摘要： PURPOSE:To reduce the generation of crosstalk between each wiring of wiring layers without degrading the wiring density of a multilayer interconnection board. CONSTITUTION:A first wiring 1 adjoins a second wiring layer 2 by way of an insulating layer where the first wiring layer is formed in the shape of meshes with a large number of holes 1a bored and the second wiring layer 2 comprises wiring layers 2a and 2b respectively. Each wiring of the wirings 2a and 2b is vertically corrugated and curved and partially sinks into the holes 1a of the first wiring layer 1. This construction makes it possible to reinforce static coupling between the mesh-shaped first wiring layer 1 and each of the wiring layers 2a and 2b.

44. 发明专利

JPH04182317A FORMATION OF OXIDE SUPERCONDUCTING THIN FILM 失效
公开(公告)号：JPH04182317A
公开(公告)日：1992-06-29
申请号：JP30945590
申请日：1990-11-15
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： NAGAISHI RYUKI , HATTORI HISAO , ITOZAKI HIDEO
IPC分类号： C01G29/00 , C01G1/00 , C23C14/28 , C30B29/22 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To form the high-quality Bi-based thin film by the laser-beam abrasion method by specifying the pulse rate of the laser beam and the growth rate of the thin film. CONSTITUTION:The pulse rate of a laser beam to irradiate a target is controlled to 1Hz. The irradiation with the laser beam is suspended each time the oxide superconducting thin film is grown to a thickness corresponding to 1/2 or one unit lattice of the Bi-Sr-Ca-Cu-O-based oxide superconductor, and the thin film is grown at the average growth rate of

45. 发明专利

JPH0450104A PRODUCTION OF HIGH-QUALITY OXIDE SUPERCONDUCTING THIN FILM AND EQUIPMENT THEREFOR 失效
公开(公告)号：JPH0450104A
公开(公告)日：1992-02-19
申请号：JP16107690
申请日：1990-06-19
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： HATTORI HISAO , HARADA KEIZO , NAKANISHI SHUSUKE , ITOZAKI HIDEO
IPC分类号： C01B13/14 , C01G1/00 , C01G3/00 , C01G29/00 , C30B29/22
摘要： PURPOSE:To obtain the title thin film with improved quality by making a film formation while irradiating a substrate with laser beams and observing the thin film crystal on the substrate and by proceeding with the film formation by changing the wavelength of the laser beams according to the crystal state. CONSTITUTION:A chamber 1 is evacuated to a high vacuum, a substrate 5 is heated to a specified temperature with a heater 4, and the evaporation sources 10 for superconductor constituents are heated and evaporated under control with K-cells 2 along with feeding a reaction gas, thus forming an oxide thin film on the substrate. The crystal state of the thin film is observed through the reflective high-speed electron beam diffraction technique, and the thin film is irradiated with laser beams from a laser equipment 7 by varying the wavelength according to the crystal state, thus forming the objective high-quality oxide superconducting thin film. The K-cells 2, heater 4, laser equipment 7 and reaction gas feed pipe 6 etc., are each controlled by a microcomputer 11, thus setting in-chamber atmosphere, temperature conditions, crystal structure etc.

46. 发明专利

JPH0320093A THIN FILM MANUFACTURING DEVICE 失效
公开(公告)号：JPH0320093A
公开(公告)日：1991-01-29
申请号：JP1042689
申请日：1989-01-19
申请人： NAT RES INST METALS , HITACHI CABLE , SUMITOMO ELECTRIC INDUSTRIES
发明人： NAKAMURA KEIKICHI , KAISE MASAJI , OGAWA KEIICHI , SATO JUNICHI , HATTORI HISAO
IPC分类号： C01B13/20 , C01B13/32 , C23C14/56 , H01L39/24
摘要： PURPOSE:To set optimum atmosphere conditions readily for a deposition source chamber and a growth chamber, respectively without changing a location of a substrate by separating them by a shield having an opening and closing window and by enabling control of atmosphere of both chambers independently. CONSTITUTION:A deposition source chamber 2 and a growth chamber 1 are separated by a shield 3, and windows 3a to 3c which can be opened and closed freely are provided to the shield 3. The windows 3a to 3c are opened and closed to intermittently control arrival of a deposition substance flow from a specified deposition source of the deposition source chamber 2 to a substrate 4 of the growth chamber 1, and to realize an atmosphere which is suitable for deposition when the window is opened and an atmosphere which is suitable for growth when closed to carry out deposition to the substrate 4 and growth of a deposition film alternative and continuously. Thereby, it is possible to perform formation and growth of a deposition film repeatedly under optimum atmospheric pressure conditions optimum for each of them and to acquire a good lamination film.

47. 发明专利

JPH01286921A SUPERCONDUCTING MATERIAL AND PRODUCTION THEREOF 失效
公开(公告)号：JPH01286921A
公开(公告)日：1989-11-17
申请号：JP4633889
申请日：1989-02-27
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： ITOZAKI HIDEO , TANAKA SABURO , HIGAKI KENJIRO , HATTORI HISAO , FUJIMORI NAOHARU , YATSU SHUJI , JODAI TETSUJI
IPC分类号： C01G15/00 , C01G1/00 , H01B12/00 , H01B13/00 , H01L39/24
摘要： PURPOSE:To make it possible to provide a stable superconducting material having high critical temperature, by adding a multielement based complex oxide consisting of Tl, Ca, Ba and Cu having a specific composition as a main component. CONSTITUTION:The aimed superconducting material essentially contains a complex oxide having a composition expressed by the formula TlxCayBaCuzOa, wherein x, y and z are each within the range expressed by the formulas of 0.5

48. 发明专利

JPH1088268A ALUMINUM ALLOY WITH HIGH STRENGTH AND HIGH TOUGHNESS, AND ITS PRODUCTION 失效
公开(公告)号：JPH1088268A
公开(公告)日：1998-04-07
申请号：JP23759796
申请日：1996-09-09
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： HATTORI HISAO , KAJI TOSHIHIKO , HASHIKURA MANABU , KOUNO YOSHIE
IPC分类号： C22F1/00 , C22C1/04 , C22C21/00 , C22C33/00 , C22C38/40 , C22C45/08 , C22F1/04
摘要： PROBLEM TO BE SOLVED: To obtain an aluminum alloy having high strength and excellent in toughness by providing a structure which has an α-aluminum phase and phases of plural intermetallic compounds, having respectively specified average crystalline grain sizes, and also dispersing the crystalline grains of the intermetallic compounds so that they are connected intermittently. SOLUTION: The aluminum alloy, which has an α-aluminum phase consisting of crystalline grains of 60-1000nm average crystalline grain size and phases of two or more intermetallic compounds (Al-additive element), consisting of crystalline grains of 20-2000nm average crystalline grain size, and in which the crystalline grains of the intermetallic compounds are dispersed so that the connection among the crystalline grains of the intermetallic compounds becomes intermittent, is prepared. Moreover, the preffered composition of the aluminum alloy is represented by Ala Zrb Xc Zd , where X is Ti, V, Cr, etc., and Z is one or more elements among Y, La, Ce, etc., and the symbols (a) and (b) stand for 90-97 atomic % and 0.5-4 atomic %, resectively, and further, the symbols (c) and (d) are the values within the region of the shaded region enclosed with lines connecting point A (0, 1, 4), point B (0, 1, 1), point C (2, 5, 1), and point D (1, 5, 3) in the figure.

49. 发明专利

JPH06275938A FORMING METHOD OF MINUTE WIRING 失效
公开(公告)号：JPH06275938A
公开(公告)日：1994-09-30
申请号：JP8397093
申请日：1993-03-17
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： HATTORI HISAO
IPC分类号： H05K1/09 , H05K3/06 , H05K3/44 , H05K3/46
摘要： PURPOSE:To enable formation of a minute wiring at a low cost by a method wherein a metal layer and an organic resist are formed sequentially on an insulating base, the metal layer is etched with the organic resist used as a mask and the organic resist is peeled off. CONSTITUTION:A metal layer 12 is formed on an insulating base 11 and an organic resist 14 of high viscosity is formed in the same pattern as a desired minute wiring on this metal layer 12. Next, the metal layer 12 is etched with this organic resist 14 used as a mask and then the organic resist is peeled off. As for the minute wiring of high precision of which the wire width is 50mum or below in particular, in this case, the organic resist of which the viscosity at a shear speed 3 (1/S) is 1000 to 6000PS and that at a shear speed 1(1/S) 10000 to 30000 PS is used preferably as the organic resist 14 of high viscosity. According to this constitution, the minute wiring having the wire width of 100mum or below can be formed at a low cost.

50. 发明专利

JPH04331716A FORMATION OF MULTIPLE OXIDE SUPERCONDUCTING THIN FILM 失效
公开(公告)号：JPH04331716A
公开(公告)日：1992-11-19
申请号：JP13184291
申请日：1991-05-07
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： HATTORI HISAO , HIGAKI KENJIRO , ITOZAKI HIDEO
IPC分类号： C01B13/14 , C01G1/00 , C01G3/00 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To form the title thin film excellent in film characteristics. CONSTITUTION:In the film formation using an evaporation source for oxides or a multiple oxide, the evaporation source is put to oxygen-enriching treatment in advance.

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