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41. 发明申请

US20100248149A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION 有权
标题翻译：化学敏感性或辐射敏感性树脂组合物和耐蚀膜和使用组合物的图案形成方法
公开(公告)号：US20100248149A1
公开(公告)日：2010-09-30
申请号：US12729336
申请日：2010-03-23
申请人： Tomotaka Tsuchimura , Hidenori Takahashi , Takayuki Ito , Takeshi Inasaki , Shohei Kataoka
发明人： Tomotaka Tsuchimura , Hidenori Takahashi , Takayuki Ito , Takeshi Inasaki , Shohei Kataoka
IPC分类号： G03F7/20 , C08F12/24 , C08F214/16 , C08F224/00
CPC分类号： C08F224/00 , C08F12/20 , C08F12/22 , C08F12/24 , C08F12/30 , C08F12/32 , C08F212/14 , C09D125/18 , G03F7/0045 , G03F7/029 , G03F7/0392 , G03F7/2037 , Y10S430/122 , C08F220/16 , C08F212/32 , C08F2220/1883 , C08F2220/1825
摘要： Provided is an actinic ray-sensitive or radiation-sensitive resin composition including (P) a resin which contains (A) a repeating unit having an ionic structure moiety capable of producing an acid anion on the side chain upon irradiation with an actinic ray or radiation, wherein a cation moiety of the ionic structure moiety has an acid-decomposable group or an alkali-decomposable group.
摘要翻译：本发明提供一种光活性射线敏感性或辐射敏感性树脂组合物，其包含（P）树脂，该树脂含有（A）具有离子结构部分的重复单元，该离子结构部分能够在照射光化学射线或辐射时在侧链上产生酸性阴离子，其中所述离子结构部分的阳离子部分具有酸可分解基团或碱可分解基团。

42. 发明申请

US20100055859A1 Semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20100055859A1
公开(公告)日：2010-03-04
申请号：US12591085
申请日：2009-11-06
申请人： Takayuki Ito , Toshihiko Iinuma , Kyoichi Suguro
发明人： Takayuki Ito , Toshihiko Iinuma , Kyoichi Suguro
IPC分类号： H01L21/336 , H01L21/425
CPC分类号： H01L21/26506 , H01L21/26513 , H01L21/2686 , H01L29/6653 , H01L29/66575 , H01L29/6659
摘要： Disclosed is a method for manufacturing a semiconductor device comprising implanting ions of an impurity element into a semiconductor region, implanting, into the semiconductor region, ions of a predetermined element which is a group IV element or an element having the same conductivity type as the impurity element and larger in mass number than the impurity element, and irradiating a region into which the impurity element and the predetermined element are implanted with light to anneal the region, the light having an emission intensity distribution, a maximum point of the distribution existing in a wavelength region of not more than 600 nm.
摘要翻译：公开了一种制造半导体器件的方法，包括将杂质元素的离子注入到半导体区域中，将作为IV族元素的预定元素或与杂质相同的导电类型的元素的离子注入半导体区域元素，并且质量数大于杂质元素，并且用光照射杂质元素和预定元素被注入的区域以使该区域退火，该光具有发光强度分布，存在于a的分布的最大点波长区域不大于600nm。

43. 发明授权

US07650515B2 Secure processing device, method and program 有权
标题翻译：安全处理设备，方法和程序
公开(公告)号：US07650515B2
公开(公告)日：2010-01-19
申请号：US12160281
申请日：2007-02-02
申请人： Takayuki Ito , Yoshikatsu Ito
发明人： Takayuki Ito , Yoshikatsu Ito
IPC分类号： G06F11/30 , G06F12/14
CPC分类号： H04L9/3236 , H04L2209/603
摘要： A secure processing device having a power saving mode, which is used for built-in apparatuses, calculates a hash value of secure data that needs to be saved when switching to the power saving mode, stores the calculated hash value in a protection storage unit whose data is not lost even in the power saving mode, encrypts the secure data and stores the encrypted data in an external memory when switching to the power saving mode. When switching back to the normal power mode, the secure processing device decrypts the encrypted data, calculates a hash value of the decrypted data and compares the hash value with the hash value stored in the protection storage unit. The decrypted data is restored to the protection storage unit when the hash values are identical, but discarded together with the encrypted data stored in the external memory when the hash values are not identical.
摘要翻译：具有省电模式的安全处理装置，用于内置装置，计算切换到省电模式时需要保存的安全数据的哈希值，将计算出的散列值存储在保护存储部中，即使在省电模式下数据也不会丢失，在切换到省电模式时，加密安全数据并将加密数据存储在外部存储器中。当切换回正常功率模式时，安全处理装置解密加密数据，计算解密数据的散列值，并将哈希值与存储在保护存储单元中的散列值进行比较。当哈希值相同时，解密的数据被恢复到保护存储单元，但是当哈希值不相同时，被解密的数据与存储在外部存储器中的加密数据一起被丢弃。

44. 发明申请

US20090309133A1 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件和半导体器件的制造方法
公开(公告)号：US20090309133A1
公开(公告)日：2009-12-17
申请号：US12483728
申请日：2009-06-12
申请人： Takayuki Ito , Yusuke Oshiki , Kouji Matsuo , Kenichi Yoshino , Takaharu Itani , Takuo Ohashi , Toshihiko Iinuma , Kiyotaka Miyano , Kunihiro Miyazaki
发明人： Takayuki Ito , Yusuke Oshiki , Kouji Matsuo , Kenichi Yoshino , Takaharu Itani , Takuo Ohashi , Toshihiko Iinuma , Kiyotaka Miyano , Kunihiro Miyazaki
IPC分类号： H01L29/04 , H01L21/20
CPC分类号： H01L21/823807 , H01L21/2686 , H01L21/823814 , H01L21/823878 , H01L29/165 , H01L29/66636 , H01L29/78 , H01L29/7848
摘要： A manufacturing method for semiconductor device includes: forming an opening, in a surface of a semiconductor substrate being composed of first atom, the opening having an opening ratio y to an area of the surface of the semiconductor substrate ranging from 5 to 30%; forming an epitaxial layer in the opening, the epitaxial layer being made of a mixed crystal containing a second atom in a concentration ranging from 15 to 25%, and the second atom having a lattice constant different from a lattice constant of the first atom; implanting impurity ion into the epitaxial layer; and performing activation annealing at a predetermined temperature T, the predetermined temperature T being equal to or higher than 1150° C. and satisfies a relationship of y≦1E-5exp(21541/T).
摘要翻译：一种半导体装置的制造方法，其特征在于，在半导体基板的由第一原子构成的表面上形成有与半导体基板的表面的面积为5〜30％的开口率y的开口的开口部; 在所述开口中形成外延层，所述外延层由含有15〜25％的浓度的第二原子的混合晶体构成，所述第二原子的晶格常数不同于所述第一原子的晶格常数; 将杂质离子注入到外延层中; 并在预定温度T下进行活化退火，预定温度T等于或高于1150℃，并且满足y <= 1E-5exp（21541 / T）的关系。

45. 发明申请

US20090143623A1 Production Process of Cyanoethyl Ether 审中-公开
标题翻译：氰乙醚的生产工艺
公开(公告)号：US20090143623A1
公开(公告)日：2009-06-04
申请号：US12276524
申请日：2008-11-24
申请人： Taiji Katsumata , Takayuki Ito , Masayuki Harada
发明人： Taiji Katsumata , Takayuki Ito , Masayuki Harada
IPC分类号： C07C43/04
CPC分类号： C07C255/13 , C07C255/30 , C07C2601/14 , C07C2602/28
摘要： Provided is a production process of a cyanoethyl ether by reacting an alcohol and acrylonitrile in a two-phase system of a non-ether solvent/an aqueous alkali solution.
摘要翻译：本发明提供了在非醚溶剂/碱水溶液的两相体系中使醇与丙烯腈反应的氰乙醚的制造方法。

46. 发明申请

US20090138728A1 Program update method and server 有权
公开(公告)号：US20090138728A1
公开(公告)日：2009-05-28
申请号：US12081889
申请日：2008-04-23
申请人： Makoto Fujiwara , Yusuke Nemoto , Junichi Yasui , Takuji Maeda , Takayuki Ito , Yasushi Yamada , Shinji Inoue
发明人： Makoto Fujiwara , Yusuke Nemoto , Junichi Yasui , Takuji Maeda , Takayuki Ito , Yasushi Yamada , Shinji Inoue
IPC分类号： G06F12/14
CPC分类号： G06F21/123 , G06F21/572 , G06F21/72
摘要： A system including a secure LSI 1 establishes a communication path to/from a server 3 (UD1), and receives a common key-encrypted program generated by encryption with a common key and transmitted from the server 3 (UD6 and UD7). The received common key-encrypted program is decrypted to generate a raw program, and the raw program is re-encrypted with an inherent key to newly generate an inherent key-encrypted program, which is stored in an external memory.

47. 发明申请

US20080268660A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20080268660A1
公开(公告)日：2008-10-30
申请号：US12108589
申请日：2008-04-24
申请人： Takaharu Itani , Kenichi Yoshino , Takayuki Ito , Takashi Kawakami , Tetsuya Kugimiya
发明人： Takaharu Itani , Kenichi Yoshino , Takayuki Ito , Takashi Kawakami , Tetsuya Kugimiya
IPC分类号： H01L21/02 , H01L21/00
CPC分类号： H01L21/02087 , H01L21/26513 , H01L21/2686 , H01L21/67115 , H01L29/66575
摘要： A method of manufacturing a semiconductor device that involves a heat treatment of a semiconductor substrate, has removing a superficial layer from an upper surface of an edge part of said semiconductor substrate, a bevel surface of the edge part of said semiconductor substrate and a side surface of the edge part of said semiconductor substrate; and conducting the heat treatment of said semiconductor substrate by irradiating said semiconductor substrate with light having a pulse width of 0.1 milliseconds to 100 milliseconds from a light source after said superficial layer is removed.
摘要翻译：制造涉及半导体衬底的热处理的半导体器件的方法，从所述半导体衬底的边缘部分的上表面，所述半导体衬底的边缘部分的斜面以及侧表面的所述半导体衬底的边缘部分; 以及在去除所述表面层之后，从光源照射具有0.1毫秒至100毫微秒的脉冲宽度的光，从而对所述半导体衬底进行热处理。

48. 发明授权

US07253972B2 Telephoto lens system 有权
标题翻译：长焦镜头系统
公开(公告)号：US07253972B2
公开(公告)日：2007-08-07
申请号：US11208525
申请日：2005-08-23
申请人： Junichi Fujisaki , Takayuki Ito
发明人： Junichi Fujisaki , Takayuki Ito
IPC分类号： G02B13/02
CPC分类号： G02B13/02
摘要： A telephoto lens system of a four-lens-group arrangement includes a negative first lens group, a positive or negative second lens group, a negative third lens group and a positive fourth lens group. The telephoto lens system of the four-lens-group arrangement is constituted by less than six lens elements in total. The positive or negative second lens group is constituted by a positive lens element and a negative lens element which are cemented to each other, in this order from the object. The positive lens element has a convex surface with a larger curvature facing toward the object. The positive or negative second lens group satisfies the following condition: 0.8
摘要翻译：四透镜组布置的长焦透镜系统包括负第一透镜组，正或负第二透镜组，负第三透镜组和正第四透镜组。四透镜组布置的长焦透镜系统总共由少于六个透镜元件构成。正或负第二透镜组由从物体的顺序彼此粘合的正透镜元件和负透镜元件构成。正透镜元件具有面向物体的较大曲率的凸面。正或负第二透镜组满足以下条件：<？in-line-formula description =“In-line formula”end =“lead”？> 0.8

49. 发明授权

US07209300B2 Wide-angle lens system 有权
标题翻译：广角镜头系统
公开(公告)号：US07209300B2
公开(公告)日：2007-04-24
申请号：US11302163
申请日：2005-12-14
申请人： Sachiko Ryu , Takayuki Ito
发明人： Sachiko Ryu , Takayuki Ito
IPC分类号： G02B13/04 , G02B9/04
CPC分类号： G02B13/04
摘要： A wide-angle lens system includes a positive front lens group, a diaphragm, and a positive rear lens group. The front lens group includes a negative first-sub-lens group and a positive second-sub-lens group.The negative first-sub-lens group includes a negative lens element, a positive lens element, and a negative lens element.The front lens group satisfies the following conditions: 0.5
摘要翻译：广角镜头系统包括正前透镜组，光圈和正后透镜组。前透镜组包括负的第一子透镜组和正的第二子透镜组。负的第一子透镜组包括负透镜元件，正透镜元件和负透镜元件。前透镜组满足以下条件：<？in-line-formula description =“In-line Formulas”end =“lead”？> 0.5 <0.75 ）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> 0.5 <| f < ＆lt;＆lt;＆lt;＆lt;＆lt;＆gt;＆lt; 1b＆lt; 1＆lt; 1.0（2）＆lt;？in-line-formula description =“In-line Formulas”end =“tail” -formulae description =“In-line Formulas”end =“lead”？> 0.35 <0.6（3）<？in-line-formula description =“In-line Formulas” end =“tail”？>其中f：整个透镜系统的焦距; f 1a：负第一子透镜组的焦距; f1b1：正二次透镜组的焦距; f 1比特：正二次透镜组的最大像侧表面的焦距; 1×1bi ：正二次透镜组的最大像侧表面的曲率半径; 和N 1比特：正二次透镜组的最大像侧透镜元件的折射率。

50. 发明申请

US20060126192A1 Wide-angle lens system 有权
标题翻译：广角镜头系统
公开(公告)号：US20060126192A1
公开(公告)日：2006-06-15
申请号：US11302163
申请日：2005-12-14
申请人： Sachiko Ryu , Takayuki Ito
发明人： Sachiko Ryu , Takayuki Ito
IPC分类号： G02B13/04
CPC分类号： G02B13/04
摘要： A wide-angle lens system includes a positive front lens group, a diaphragm, and a positive rear lens group. The front lens group includes a negative first-sub-lens group and a positive second-sub-lens group. The negative first-sub-lens group includes a negative lens element, a positive lens element, and a negative lens element. The front lens group satisfies the following conditions: 0.5
摘要翻译：广角镜头系统包括正前透镜组，光圈和正后透镜组。前透镜组包括负的第一子透镜组和正的第二子透镜组。负的第一子透镜组包括负透镜元件，正透镜元件和负透镜元件。前透镜组满足以下条件：<？in-line-formula description =“In-line Formulas”end =“lead”？> 0.5 <0.75。。。（1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line formula”end =“lead”？> 1＆lt; 1a＆gt; / f＆lt; 1b＆lt; 1.0。。。（2）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> 0.35 1bi<0.6。。。（3）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中f：整个透镜系统的焦距; f 1a：负第一子透镜组的焦距; f1b1：正二次透镜组的焦距; f 1比特：正二次透镜组的最大像侧表面的焦距; 1×1bi ：正二次透镜组的最大像侧表面的曲率半径; 和N 1比特：正二次透镜组的最大像侧透镜元件的折射率。

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