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41. 发明授权

US07417274B2 Semiconductor device including direct contact between capacitor electrode and contact plug and method of manufacturing the same 失效
标题翻译：包括电容器电极和接触插塞之间的直接接触的半导体器件及其制造方法
公开(公告)号：US07417274B2
公开(公告)日：2008-08-26
申请号：US11491907
申请日：2006-07-25
申请人： Tohru Ozaki , Yoshinori Kumura , Yoshiro Shimojo , Susumu Shuto
发明人： Tohru Ozaki , Yoshinori Kumura , Yoshiro Shimojo , Susumu Shuto
IPC分类号： H01L27/108
CPC分类号： H01L27/11507 , H01L21/76834 , H01L21/76888 , H01L27/11502 , H01L28/57 , H01L28/65
摘要： A semiconductor device comprises an insulation film that is provided on a semiconductor substrate, a first contact plug that is provided in the insulation film and includes a metal, a first adhesive film that is provided on the insulation film, has a higher oxygen affinity than the metal, and includes an oxide, a second adhesive film that is provided on the first contact plug and has a film thickness that is smaller than a film thickness of the first adhesive film, a first capacitor electrode that is provided on the contact plug and the first adhesive film, has a part in direct contact with the first contact plug, a capacitor insulation film that is provided on the first capacitor electrode, and a second capacitor electrode that is provided on the capacitor insulation film.
摘要翻译：半导体器件包括设置在半导体衬底上的绝缘膜，设置在绝缘膜中并且包括金属的第一接触插塞，设置在绝缘膜上的第一粘合膜具有比该绝缘膜更高的氧亲和力金属，并且包括氧化物，第二粘合膜，其设置在第一接触插塞上并且具有小于第一粘合膜的膜厚度的膜厚度;设置在接触插塞上的第一电容器电极和第一粘合膜具有与第一接触插塞直接接触的部分，设置在第一电容器电极上的电容器绝缘膜和设置在电容器绝缘膜上的第二电容器电极。

42. 发明授权

US07348617B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07348617B2
公开(公告)日：2008-03-25
申请号：US11288204
申请日：2005-11-29
申请人： Yoshinori Kumura , Tohru Ozaki , Susumu Shuto , Yoshiro Shimojo , Iwao Kunishima
发明人： Yoshinori Kumura , Tohru Ozaki , Susumu Shuto , Yoshiro Shimojo , Iwao Kunishima
IPC分类号： H01L29/94
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/57 , H01L28/65
摘要： A semiconductor device comprising a ferroelectric capacitor having improved reliability is disclosed. According to one aspect of the present invention, it is provided a semiconductor device comprising a transistor formed on a semiconductor substrate, a ferroelectric capacitor formed above the transistor and comprising a lower electrode, a ferroelectric film and an upper electrode, a first hydrogen barrier film formed over the ferroelectric capacitor, an insulator formed over the first hydrogen barrier film, a contact plug disposed in the insulator and electrically connected with the upper electrode, a second hydrogen barrier film disposed between the contact plug and the insulator continuously, and a wiring connected with the contact plug.
摘要翻译：公开了一种包括具有改善的可靠性的铁电电容器的半导体器件。根据本发明的一个方面，提供了一种半导体器件，包括形成在半导体衬底上的晶体管，形成在晶体管上方的铁电电容器，包括下电极，铁电体膜和上电极，第一氢阻挡膜形成在所述铁电电容器上，形成在所述第一氢阻挡膜上的绝缘体，设置在所述绝缘体中并与所述上电极电连接的接触插塞，连续地配置在所述接触插塞和所述绝缘体之间的第二氢阻挡膜，与接触插头。

43. 发明申请

US20080055962A1 Ferroelectric semiconductor memory device 失效
标题翻译：铁电半导体存储器件
公开(公告)号：US20080055962A1
公开(公告)日：2008-03-06
申请号：US11896044
申请日：2007-08-29
申请人： Susumu Shuto
发明人： Susumu Shuto
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： A memory cell includes a ferroelectric capacitor for holding a charge and a transistor connected in parallel with the ferroelectric capacitor. A plurality of the ferroelectric memory cells are connected in series to form a memory cell block. A selection transistor connects,to one end of the block. A bit line connects to the selection transistor. A plate line connects to the other end of the block. A control circuit changes potentials of the word line and the bit line. With the potential of the plate line being held constant, the potential of the word line is changed, thereby erasing information or writing information to the ferroelectric memory cells.
摘要翻译：存储单元包括用于保持电荷的铁电电容器和与铁电电容器并联连接的晶体管。多个铁电存储单元串联连接以形成存储单元块。选择晶体管连接到块的一端。位线连接到选择晶体管。板线连接到块的另一端。控制电路改变字线和位线的电位。在板线的电位保持恒定的情况下，字线的电位改变，从而擦除信息或将信息写入铁电存储单元。

44. 发明授权

US07339828B2 Nonvolatile semiconductor memory device with memory cells, each having an FG cell transistor and select gate transistor, and a method of writing data into the same 失效
标题翻译：具有存储单元的非易失性半导体存储器件，每个具有FG单元晶体管和选择栅极晶体管，以及将数据写入其中的方法
公开(公告)号：US07339828B2
公开(公告)日：2008-03-04
申请号：US11248303
申请日：2005-10-13
申请人： Takehiro Hasegawa , Susumu Shuto
发明人： Takehiro Hasegawa , Susumu Shuto
IPC分类号： G11C11/34
CPC分类号： G11C16/0425 , G11C16/10
摘要： A semiconductor device comprises a memory cell array and a source line driver. Each of the memory cells in the memory cell array has a floating gate cell transistor which stores data by accumulating charge in the floating gate and a select gate transistor whose drain is connected to the source of the cell transistor and whose source is connected to a source line. The source line driver is configured so as to drive the source line in a write operation at a potential between the substrate bias potential of the cell transistor and select gate transistor and the ground potential.
摘要翻译：半导体器件包括存储单元阵列和源极线驱动器。存储单元阵列中的每个存储单元具有浮置单元晶体管，其通过在浮置栅极中累积电荷来存储数据;以及选择栅极晶体管，其漏极连接到单元晶体管的源极，源极连接到源极线。源极线驱动器被配置为在写入操作中以单电池晶体管的衬底偏置电位和选择栅极晶体管的电位与地电位之间的电位驱动源极线。

45. 发明授权

US07289365B2 Nonvolatile semiconductor memory device in which write and erase threshold voltages are set at levels symmetrical about neutral threshold voltage of cell transistor 失效
标题翻译：非易失性半导体存储器件，其中写入和擦除阈值电压被设置为关于单元晶体管的中性阈值电压对称的电平
公开(公告)号：US07289365B2
公开(公告)日：2007-10-30
申请号：US11244287
申请日：2005-10-06
申请人： Susumu Shuto
发明人： Susumu Shuto
IPC分类号： G11C8/00
CPC分类号： G11C8/08 , G11C16/0433 , G11C16/10
摘要： A semiconductor device includes a memory cell and driver. The memory cell has a cell transistor which has one end of a current path connected to a bit line and stores data by storing charges in a floating gate, and a selector gate transistor which has one end of a current path connected to the other end of the current path of the cell transistor and the other end of the current path connected to a source line. The driver is configured to apply, to the control gate of the cell transistor in read, a potential of the same sign as that of a potential applied to the gate of the selector gate transistor.
摘要翻译：半导体器件包括存储器单元和驱动器。存储单元具有单元晶体管，其电流通路的一端连接到位线，并通过在浮动栅极中存储电荷来存储数据;以及选择栅极晶体管，其选择栅极晶体管的电流通路的一端连接到单元晶体管的电流路径和电流路径的另一端连接到源极线。驱动器被配置为向读取中的单元晶体管的控制栅极施加与施加到选择栅极晶体管的栅极的电位相同的符号的电位。

46. 发明申请

US20070211512A1 Ferroelectric memory device 失效
标题翻译：铁电存储器件
公开(公告)号：US20070211512A1
公开(公告)日：2007-09-13
申请号：US11511212
申请日：2006-08-29
申请人： Susumu Shuto
发明人： Susumu Shuto
IPC分类号： G11C11/22 , G11C7/04
CPC分类号： G11C11/22 , G11C7/04 , G11C7/22
摘要： A ferroelectric memory device includes a memory cell, read circuit, temperature sensing circuit, and read controller. The memory cell includes a ferroelectric capacitor. The read circuit is configured to read data from the memory cell. The temperature sensing circuit is configured to sense the ambient temperature of the memory cell. The read controller is configured to receive a temperature sensing signal from the temperature sensing circuit, and inhibit a data read operation by the read circuit when the temperature sensed by the temperature sensing circuit is higher than a preset temperature.
摘要翻译：铁电存储器件包括存储单元，读电路，温度检测电路和读控制器。存储单元包括铁电电容器。读取电路被配置为从存储器单元读取数据。温度感测电路被配置为感测存储器单元的环境温度。读取控制器被配置为从温度感测电路接收温度感测信号，并且当温度感测电路感测的温度高于预设温度时，禁止读取电路的数据读取操作。

47. 发明申请

US20070054462A1 Semiconductor device including direct contact between capacitor electrode and contact plug and method of manufacturing the same 失效
标题翻译：包括电容器电极和接触插塞之间的直接接触的半导体器件及其制造方法
公开(公告)号：US20070054462A1
公开(公告)日：2007-03-08
申请号：US11491907
申请日：2006-07-25
申请人： Tohru Ozaki , Yoshinori Kumura , Yoshiro Shimojo , Susumu Shuto
发明人： Tohru Ozaki , Yoshinori Kumura , Yoshiro Shimojo , Susumu Shuto
IPC分类号： H01L21/20 , H01L21/8242 , H01L21/00
CPC分类号： H01L27/11507 , H01L21/76834 , H01L21/76888 , H01L27/11502 , H01L28/57 , H01L28/65
摘要： A semiconductor device comprises an insulation film that is provided on a semiconductor substrate, a first contact plug that is provided in the insulation film and includes a metal, a first adhesive film that is provided on the insulation film, has a higher oxygen affinity than the metal, and includes an oxide, a second adhesive film that is provided on the first contact plug and has a film thickness that is smaller than a film thickness of the first adhesive film, a first capacitor electrode that is provided on the contact plug and the first adhesive film, has a part in direct contact with the first contact plug, a capacitor insulation film that is provided on the first capacitor electrode, and a second capacitor electrode that is provided on the capacitor insulation film.
摘要翻译：半导体器件包括设置在半导体衬底上的绝缘膜，设置在绝缘膜中并且包括金属的第一接触插塞，设置在绝缘膜上的第一粘合膜具有比该绝缘膜更高的氧亲和力金属，并且包括氧化物，第二粘合膜，其设置在第一接触插塞上并且具有小于第一粘合膜的膜厚度的膜厚度;设置在接触插塞上的第一电容器电极和第一粘合膜具有与第一接触插塞直接接触的部分，设置在第一电容器电极上的电容器绝缘膜和设置在电容器绝缘膜上的第二电容器电极。

48. 发明申请

US20070014182A1 Nonvolatile semiconductor memory device which reads by decreasing effective threshold voltage of selector gate transistor 失效
标题翻译：通过降低选择栅极晶体管的有效阈值电压来读取的非易失性半导体存储器件
公开(公告)号：US20070014182A1
公开(公告)日：2007-01-18
申请号：US11242895
申请日：2005-10-05
申请人： Susumu Shuto
发明人： Susumu Shuto
IPC分类号： G11C8/00 , G11C11/34
CPC分类号： G11C8/08 , G11C16/0433 , G11C16/08 , G11C16/26
摘要： A semiconductor device includes memory cells and a driver. Each memory cell has a cell transistor which has one end of a current path connected to a bit line and stores data by storing charges in a floating gate, and a selector gate transistor which has one end of a current path connected to the other end of the current path of the cell transistor and the other end of the current path connected to a source line. The driver is configured to selectively drive the memory cells, and in read, apply, to a source line connected to a memory cell subjected to read, a potential of a sign opposite to that of a potential applied to the gate of the selector gate transistor in the memory cell to read.
摘要翻译：半导体器件包括存储器单元和驱动器。每个存储单元具有一个单元晶体管，该单元晶体管具有连接到位线的电流通路的一端，并通过在浮动栅极中存储电荷来存储数据;以及选择栅极晶体管，其选择栅极晶体管的电流通路的一端连接到单元晶体管的电流路径和电流路径的另一端连接到源极线。驱动器被配置为选择性地驱动存储器单元，并且在读取中应用于连接到被读取的存储器单元的源极线，与施加到选择栅极晶体管的栅极的电位相反的符号的电位在内存单元中读取。

49. 发明申请

US20060214206A1 Ferroelectric memory device and method of manufacturing the same 审中-公开
标题翻译：铁电存储器件及其制造方法
公开(公告)号：US20060214206A1
公开(公告)日：2006-09-28
申请号：US11377166
申请日：2006-03-17
申请人： Susumu Shuto
发明人： Susumu Shuto
IPC分类号： H01L29/94
CPC分类号： H01L27/115 , H01L27/11521 , H01L29/513 , H01L29/7881
摘要： There is disclosed a ferroelectric memory device comprising an MIS transistor formed on a substrate, a ferroelectric film which is formed above the MIS transistor through an interlayer insulating film, and which has a width substantially equal to a channel length of the MIS transistor, and a same wiring layer which connects a diffusion layer of the MIS transistor formed in a surface region of the substrate to a side surface of the ferroelectric film.
摘要翻译：公开了一种铁电存储器件，其包括形成在衬底上的MIS晶体管，通过层间绝缘膜形成在MIS晶体管上方并且具有与MIS晶体管的沟道长度基本相等的宽度的铁电体膜，以及相同的布线层，其将形成在基板的表面区域中的MIS晶体管的扩散层连接到铁电体膜的侧表面。

50. 发明申请

US20060114709A1 Semiconductor storage device, operation method of the same and test method of the same 失效
标题翻译：半导体存储器件的操作方法和测试方法相同
公开(公告)号：US20060114709A1
公开(公告)日：2006-06-01
申请号：US11236560
申请日：2005-09-28
申请人： Yuki Yamada , Susumu Shuto
发明人： Yuki Yamada , Susumu Shuto
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： A semiconductor storage device comprises a bit line; a word line; a plate line; a ferroelectric capacitor having a ferroelectric substance between electrodes, one of the electrodes being connected to the plate line, the ferroelectric capacitor being capable of storing data; a selection transistor connected between the other of the electrodes of the ferroelectric capacitor and the bit line, the selection transistor being capable of selectively connecting the ferroelectric capacitor to the bit line on the basis of a potential on the word line; a bit line driver corresponding to the bit line to drive the bit line; a word line driver corresponding to the word line to drive the word line; and a plate line driver corresponding to the plate line, the plate line driver including a plurality of plate voltage lines so as to be able to apply a plurality of different voltage values to the plate line, the plate line driver connecting a common single plate voltage line included in the plate voltage lines to the plate line when a data is written or rewritten into the ferroelectric capacitor.
摘要翻译：半导体存储装置包括位线; 字线板线在电极之间具有铁电体的铁电电容器，其中一个电极与板线连接，强电介质电容器能够存储数据; 连接在所述铁电电容器的另一个电极和所述位线之间的选择晶体管，所述选择晶体管能够基于所述字线上的电位选择性地将所述铁电电容器连接到所述位线; 对应于位线驱动位线的位线驱动器; 与字线对应的字线驱动器驱动字线; 以及对应于所述板线的板线驱动器，所述板线驱动器包括多个板电压线，以便能够对所述板线施加多个不同的电压值，所述板线驱动器将公共单板电压当数据被写入或重写到铁电电容器中时，包括在板电压线中的线。

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