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41. 发明申请

US20080132047A1 METHOD FOR DOPING IMPURITIES 有权
标题翻译：污染方法
公开(公告)号：US20080132047A1
公开(公告)日：2008-06-05
申请号：US11566814
申请日：2006-12-05
申请人： Greg Thomas Dunne , Jesse Berkley Tucker , Stanislav Ivanovich Soloviev , Zachary Matthew Stum
发明人： Greg Thomas Dunne , Jesse Berkley Tucker , Stanislav Ivanovich Soloviev , Zachary Matthew Stum
IPC分类号： H01L21/425
CPC分类号： H01L21/2258 , H01L21/0455
摘要： A method for doping impurities into a device layer is provided. The method includes providing a carbonized dopant layer over a device layer, wherein the carbonized dopant layer comprises one or more dopant impurities, and heat treating the carbonized dopant layer to thermally diffuse the dopant impurities into the device layer.
摘要翻译：提供了将杂质掺杂到器件层中的方法。该方法包括在器件层上提供碳化掺杂剂层，其中碳化掺杂剂层包括一种或多种掺杂剂杂质，以及热处理碳化掺杂剂层以将掺杂剂杂质热扩散到器件层中。

42. 发明授权

US07351637B2 Semiconductor transistors having reduced channel widths and methods of fabricating same 有权
标题翻译：具有减小的沟道宽度的半导体晶体管及其制造方法
公开(公告)号：US07351637B2
公开(公告)日：2008-04-01
申请号：US11400842
申请日：2006-04-10
申请人： Jesse Berkley Tucker
发明人： Jesse Berkley Tucker
IPC分类号： H01L21/336 , H01L21/8222 , H01L21/425
CPC分类号： H01L29/66068 , H01L21/046 , H01L29/7827
摘要： A method of forming a channel in a semiconductor device including forming an opening in a masking layer to expose a portion of an underlying semiconductor layer through the opening is provided. The method further includes disposing a screening layer and implanting a first type of ions in the portion of the underlying semiconductor layer through the screening layer and through the opening in the masking layer. A second type of ions are implanted in the portion of the underlying semiconductor layer through the screening layer and through the opening in the masking layer at an oblique ion implantation angle wherein a lateral spread of second type ions is greater than a lateral spread of first type ions. Semiconductor devices fabricated in accordance to above said method is also provided.
摘要翻译：提供一种在半导体器件中形成通道的方法，包括在掩模层中形成开口以通过开口暴露下面的半导体层的一部分。该方法还包括设置屏蔽层并且通过屏蔽层和穿过屏蔽层中的开口将下一半导体层的部分中的第一类型的离子注入。第二类型的离子通过屏蔽层注入到下面的半导体层的部分中，并以斜离子注入角通过掩模层中的开口，其中第二类型离子的横向扩展大于第一类型的横向扩展离子。还提供了根据上述方法制造的半导体器件。

43. 发明申请

US20090267141A1 METHOD FOR FABRICATING SILICON CARBIDE VERTICAL MOSFET DEVICES 审中-公开
标题翻译：制造碳化硅垂直MOSFET器件的方法
公开(公告)号：US20090267141A1
公开(公告)日：2009-10-29
申请号：US12498630
申请日：2009-07-07
申请人： Kevin Sean Matocha , Jody Alan Fronheiser , Larry Burton Rowland , Jesse Berkley Tucker , Stephen Daley Arthur , Zachary Matthew Stum
发明人： Kevin Sean Matocha , Jody Alan Fronheiser , Larry Burton Rowland , Jesse Berkley Tucker , Stephen Daley Arthur , Zachary Matthew Stum
IPC分类号： H01L29/78 , H01L21/22
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/1095 , H01L29/1608 , H01L29/41766 , H01L29/66068
摘要： A method of forming a vertical MOSFET device includes forming a trench within a drift layer substrate, the drift layer comprising a first polarity type, the trench generally defining a well region of a second polarity type opposite the first polarity type. An ohmic contact layer is formed within a bottom surface of the trench, the ohmic contact layer comprising a material of the second polarity type. A layer of the second polarity type is epitaxially grown over the drift layer, sidewall surfaces of the trench, and the ohmic contact layer. A layer of the first polarity type is epitaxially grown over the epitaxially grown layer of the second polarity type so as to refill the trench, and the epitaxially grown layers of the first and second polarity type are planarized so as to expose an upper surface of the drift layer substrate.
摘要翻译：形成垂直MOSFET器件的方法包括在漂移层衬底内形成沟槽，漂移层包括第一极性类型，沟槽通常限定与第一极性类型相反的第二极性类型的阱区。欧姆接触层形成在沟槽的底表面内，欧姆接触层包括第二极性类型的材料。在漂移层，沟槽的侧壁表面和欧姆接触层上外延生长第二极性类型的层。第一极性类型的层在第二极性类型的外延生长层上外延生长，以便重新填充沟槽，并且将第一和第二极性类型的外延生长层平坦化，以暴露出第二极性类型的上表面漂移层基板。

44. 外观设计

USD666169S1 Monitoring earbud 有权
标题翻译：监听耳塞
公开(公告)号：USD666169S1
公开(公告)日：2012-08-28
申请号：US29403770
申请日：2011-10-11
申请人： Jesse Berkley Tucker , Allen Wendell Moore
设计人： Jesse Berkley Tucker , Allen Wendell Moore

45. 发明授权

US08089097B2 Homoepitaxial gallium-nitride-based electronic devices and method for producing same 有权
标题翻译：同质外延氮化镓基电子器件及其制造方法
公开(公告)号：US08089097B2
公开(公告)日：2012-01-03
申请号：US10329982
申请日：2002-12-27
申请人： Mark Phillip D'Evelyn , Nicole Andrea Evers , An-Ping Zhang , Jesse Berkley Tucker , Jeffrey Bernard Fedison
发明人： Mark Phillip D'Evelyn , Nicole Andrea Evers , An-Ping Zhang , Jesse Berkley Tucker , Jeffrey Bernard Fedison
IPC分类号： H01L29/66
CPC分类号： C30B25/02 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/6631 , H01L29/66318 , H01L29/66462 , H01L29/732 , H01L29/7371 , H01L29/7787 , H03K17/567
摘要： There is provided an electronic device. The electronic device includes at least one epitaxial semiconductor layer disposed on a single crystal substrate comprised of gallium nitride having a dislocation density less than about 105 per cm2. A method of forming an electronic device is also provided. The method includes providing a single crystal substrate comprised of gallium nitride having a dislocation density less than about 105 per cm2, and homoepitaxially forming at least one semiconductor layer on the substrate.
摘要翻译：提供电子设备。该电子器件包括至少一个外延半导体层，该外延半导体层设置在由氮化镓构成的单晶衬底上，位错密度小于约每平方厘米105。还提供了一种形成电子设备的方法。该方法包括提供由氮化镓构成的单晶衬底，该氮化镓具有小于每平方厘米约105的位错密度，以及在该衬底上同轴外延形成至少一个半导体层。

46. 发明申请

US20080050876A1 METHOD FOR FABRICATING SILICON CARBIDE VERTICAL MOSFET DEVICES 有权
标题翻译：制造碳化硅垂直MOSFET器件的方法
公开(公告)号：US20080050876A1
公开(公告)日：2008-02-28
申请号：US11466488
申请日：2006-08-23
申请人： Kevin Sean Matocha , Jody Alan Fronheiser , Larry Burton Rowland , Jesse Berkley Tucker , Stephen Daley Arthur , Zachary Matthew Stum
发明人： Kevin Sean Matocha , Jody Alan Fronheiser , Larry Burton Rowland , Jesse Berkley Tucker , Stephen Daley Arthur , Zachary Matthew Stum
IPC分类号： H01L21/336
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/1095 , H01L29/1608 , H01L29/41766 , H01L29/66068
摘要： A method of forming a vertical MOSFET device includes forming a trench within a drift layer substrate, the drift layer comprising a first polarity type, the trench generally defining a well region of a second polarity type opposite the first polarity type. An ohmic contact layer is formed within a bottom surface of the trench, the ohmic contact layer comprising a material of the second polarity type. A layer of the second polarity type is epitaxially grown over the drift layer, sidewall surfaces of the trench, and the ohmic contact layer. A layer of the first polarity type is epitaxially grown over the epitaxially grown layer of the second polarity type so as to refill the trench, and the epitaxially grown layers of the first and second polarity type are planarized so as to expose an upper surface of the drift layer substrate.
摘要翻译：形成垂直MOSFET器件的方法包括在漂移层衬底内形成沟槽，漂移层包括第一极性类型，沟槽通常限定与第一极性类型相反的第二极性类型的阱区。欧姆接触层形成在沟槽的底表面内，欧姆接触层包括第二极性类型的材料。在漂移层，沟槽的侧壁表面和欧姆接触层上外延生长第二极性类型的层。第一极性类型的层在第二极性类型的外延生长层上外延生长，以便重新填充沟槽，并且将第一和第二极性类型的外延生长层平坦化，以暴露出第二极性类型的上表面漂移层基板。

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