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41. 发明授权

US07573556B2 In-plane switching mode liquid crystal display device and method of manufacturing the same 有权
标题翻译：面内切换模式液晶显示装置及其制造方法
公开(公告)号：US07573556B2
公开(公告)日：2009-08-11
申请号：US11477385
申请日：2006-06-30
申请人： Soon Sung Yoo , Heung Lyul Cho
发明人： Soon Sung Yoo , Heung Lyul Cho
IPC分类号： G02F1/1343
CPC分类号： G02F1/134363 , G02F2201/40
摘要： A method of manufacturing an in-plane switching mode liquid crystal display device includes forming an insulation layer on a substrate, patterning a resist layer on the insulation layer, etching the insulation layer to form an insulation layer pattern having tapered edges, forming electrode layers on exposed surfaces of the substrate, the tapered edges, and the resist layer, etching the electrode layers formed on the exposed surfaces and on the resist layer, and removing the resist layer to form the common electrode and the pixel electrode with slopes and that are arranged parallel to each other on the tapered edges of the insulation layer. The common electrode and the pixel electrode each have a width less than 1 μm, which increases aperture ratio and transmittance.
摘要翻译：一种面内切换模式液晶显示装置的制造方法包括在基板上形成绝缘层，在绝缘层上形成抗蚀剂层，蚀刻绝缘层，形成具有锥形边缘的绝缘层图案，形成电极层衬底的暴露表面，锥形边缘和抗蚀剂层，蚀刻形成在暴露表面和抗蚀剂层上的电极层，并且去除抗蚀剂层以形成具有斜面的公共电极和像素电极，并且布置在绝缘层的锥形边缘上彼此平行。公共电极和像素电极各自具有小于1um的宽度，这增加了开口率和透射率。

42. 发明授权

US07492430B2 In-plane switching mode liquid crystal display device and method of manufacturing the same 有权
标题翻译：面内切换模式液晶显示装置及其制造方法
公开(公告)号：US07492430B2
公开(公告)日：2009-02-17
申请号：US11474498
申请日：2006-06-26
申请人： Heung Lyul Cho , Soon Sung Yoo
发明人： Heung Lyul Cho , Soon Sung Yoo
IPC分类号： G02F1/1343 , G02F1/13
CPC分类号： G02F1/134363 , G02F2201/123 , G02F2201/40
摘要： A method of manufacturing an IPS switching mode liquid crystal display device includes forming a first insulation layer on a substrate, forming an electrode layer on the substrate containing the first insulation layer, forming a second insulation layer on the electrode layer, etching the second insulation layer such that the second insulation layer remains on sides of the first insulation layer, and etching the electrode layer using the remaining second insulation layer as a mask to form a plurality of electrodes. The plurality of electrodes are formed to have widths of about 0.1 μm to 2 μm, thus aperture ratio and transmittance are increased.
摘要翻译：一种制造IPS开关模式液晶显示装置的方法包括在基板上形成第一绝缘层，在包含第一绝缘层的基板上形成电极层，在电极层上形成第二绝缘层，蚀刻第二绝缘层使得第二绝缘层保留在第一绝缘层的侧面上，并且使用剩余的第二绝缘层作为掩模来蚀刻电极层以形成多个电极。多个电极形成为具有约0.1μm至2μm的宽度，因此孔径比和透射率增加。

43. 发明授权

US07488632B2 Thin film transistor substrate for display device and fabricating method thereof 有权
标题翻译：用于显示装置的薄膜晶体管基板及其制造方法
公开(公告)号：US07488632B2
公开(公告)日：2009-02-10
申请号：US11713046
申请日：2007-03-02
申请人： Byung Chul Ahn , Soon Sung Yoo , Heung Lyul Cho
发明人： Byung Chul Ahn , Soon Sung Yoo , Heung Lyul Cho
IPC分类号： H01L29/15 , G02F1/1365
CPC分类号： G02F1/136227 , G02F1/136213 , H01L27/124 , H01L27/1255 , H01L27/1288
摘要： A thin film transistor (TFT) substrate is fabricated in three mask processes. In a first mask process, a gate line and a gate electrode are formed. In a second mask process, a data line, a source electrode, a drain electrode, a semiconductor layer, and a first upper storage electrode overlapping the gate line are formed from a gate insulating film, undoped and doped amorphous silicon layers, and a data metal layer. In a third mask process, a pixel hole is formed through protective and gate insulating films within and outside a pixel area, the first upper storage electrode is partially removed, a pixel electrode contacts a side of the drain electrode within the pixel hole at the pixel area, and a second upper storage electrode contacts a side of the first upper storage electrode in the pixel hole outside the pixel area.
摘要翻译：在三个掩模工艺中制造薄膜晶体管（TFT）衬底。在第一掩模工艺中，形成栅极线和栅电极。在第二掩模处理中，从栅极绝缘膜，未掺杂和掺杂的非晶硅层形成数据线，源电极，漏极，半导体层和与栅极线重叠的第一上部存储电极，以及数据金属层。在第三掩模处理中，通过像素区域内和外部的保护栅极绝缘膜形成像素孔，部分地去除第一上部存储电极，像素电极在像素的像素孔内接触漏电极的一侧并且第二上部存储电极接触像素区域外的像素孔中的第一上部存储电极的一侧。

44. 发明授权

US07470932B2 Liquid crystal display panel and fabricating method thereof 有权
标题翻译：液晶显示面板及其制造方法
公开(公告)号：US07470932B2
公开(公告)日：2008-12-30
申请号：US11715889
申请日：2007-03-09
申请人： Soon Sung Yoo , Youn Gyoung Chang , Heung Lyul Cho
发明人： Soon Sung Yoo , Youn Gyoung Chang , Heung Lyul Cho
IPC分类号： H01L29/04
CPC分类号： H01L27/1288 , G02F1/133707 , G02F1/13394 , G02F1/13458 , G02F2001/136231 , H01L27/1214
摘要： A liquid crystal display (LCD) panel is fabricated in a simplified process. The LCD panel includes a thin film transistor (TFT) array substrate with a gate and data lines crossing each other to define a pixel area, a TFT at the crossings of the gate and data lines, a protective film, and a pixel electrode connected to the TFT and formed within a pixel opening that is arranged at the pixel area and formed through the protective film and a gate insulating film. A color filter array substrate is joined to the TFT array substrate. A pattern spacer is between the TFT and color filter array substrate and overlaps at least one of the gate line, the data line, and the thin film transistor. A rib is formed from the same layer as the pattern spacer and overlaps the pixel electrode. Liquid crystal material is provided within the LCD panel.
摘要翻译：以简化的工艺制造液晶显示器（LCD）面板。 LCD面板包括薄膜晶体管（TFT）阵列基板，栅极和数据线彼此交叉以限定像素区域，在栅极和数据线的交叉处的TFT，保护膜和连接到 TFT形成在像素区域内，并形成在像素区域并形成在保护膜和栅极绝缘膜上的像素开口内。滤色器阵列基板连接到TFT阵列基板。图案间隔物位于TFT和滤色器阵列基板之间，并与栅极线，数据线和薄膜晶体管中的至少一个重叠。肋由与图案间隔物相同的层形成，并且与像素电极重叠。液晶材料设置在LCD面板内。

45. 发明授权

US07411217B2 Thin film transistor array substrate and manufacturing method of the same 有权
标题翻译：薄膜晶体管阵列基板及其制造方法相同
公开(公告)号：US07411217B2
公开(公告)日：2008-08-12
申请号：US11594950
申请日：2006-11-09
申请人： Soon Sung Yoo , Youn Gyoung Chang , Heung Lyul Cho
发明人： Soon Sung Yoo , Youn Gyoung Chang , Heung Lyul Cho
IPC分类号： H01L29/04
CPC分类号： H01L27/124 , G02F1/13458 , G02F1/136213 , G02F1/136227 , G02F2001/136236 , H01L27/1214 , H01L27/1255 , H01L27/1288 , Y10S438/942
摘要： A thin film transistor array substrate has a gate electrode of the thin film transistor, a gate line connected to the gate electrode, and a gate pad connected to the gate line; a source/drain pattern including a source electrode and a drain electrode of the thin film transistor, a data line connected to the source electrode, a data pad connected to the data line, a storage electrode formed and superimposed with the gate line; a semiconductor pattern formed in low part of the substrate; a transparent electrode pattern including a pixel electrode connected to the drain electrode and the storage electrode, a gate pad protection electrode covering the gate pad, and a data pad protection electrode covering the data pad; and a protection pattern and a gate insulation pattern stacked in a region other than the region where the transparent electrode pattern is formed.
摘要翻译：薄膜晶体管阵列基板具有薄膜晶体管的栅电极，连接到栅电极的栅极线和连接到栅极线的栅极焊盘; 源极/漏极图案，包括薄膜晶体管的源电极和漏电极，连接到源电极的数据线，连接到数据线的数据焊盘，形成并与栅极线重叠的存储电极; 形成在基板的低部分的半导体图案; 包括连接到漏电极和存储电极的像素电极的透明电极图案，覆盖栅极焊盘的栅极焊盘保护电极和覆盖数据焊盘的数据焊盘保护电极; 以及层叠在除了形成透明电极图案的区域之外的区域中的保护图案和栅极绝缘图案。

46. 发明授权

US07749823B2 Thin film transistor substrate of horizontal electric field type liquid crystal display device and fabricating method thereof 失效
标题翻译：水平电场型液晶显示装置薄膜晶体管基板及其制造方法
公开(公告)号：US07749823B2
公开(公告)日：2010-07-06
申请号：US12475130
申请日：2009-05-29
申请人： Byung Chul Ahn , Oh Nam Kwon , Heung Lyul Cho
发明人： Byung Chul Ahn , Oh Nam Kwon , Heung Lyul Cho
IPC分类号： H01L21/336
CPC分类号： H01L27/124 , G02F1/134363 , G02F1/136213 , G02F1/1368 , G02F2001/136295 , H01L27/1288
摘要： A thin film transistor substrate of horizontal electric field type includes: a gate line and a first common line formed on a substrate to be in parallel to each other; a data line crossing the gate line and the first common line with a gate insulating film therebetween to define a pixel area; a second common line crossing the first common line having the gate insulating film therebetween; a thin film transistor connected to the gate line and the data line; a common electrode extending from the second common line in said pixel area; a pixel electrode that is parallel to the common electrode and the second common line; a protective film for covering the thin film transistor; a gate pad having a lower gate pad electrode connected to an upper gate pad electrode through a first contact hole; a common pad having a lower common pad electrode connected to an upper common pad electrode through a second contact hole; and a data pad having a lower data pad electrode connected to an upper data pad electrode provided within a third contact hole.
摘要翻译：水平电场型薄膜晶体管基板包括：形成在彼此平行的基板上的栅极线和第一公共线; 跨越所述栅极线和所述第一公共线的数据线，其间具有栅极绝缘膜，以限定像素区域; 第二公共线与其间具有栅绝缘膜的第一公共线交叉; 连接到栅极线和数据线的薄膜晶体管; 在所述像素区域中从所述第二公共线延伸的公共电极; 平行于公共电极和第二公共线的像素电极; 用于覆盖薄膜晶体管的保护膜; 栅极焊盘，其具有通过第一接触孔连接到上部栅极焊盘电极的下部栅极焊盘电极; 公共焊盘，其具有通过第二接触孔连接到上公共焊盘电极的下公共焊盘电极; 以及数据焊盘，其具有连接到设置在第三接触孔内的上数据焊盘电极的下数据焊盘电极。

47. 发明授权

US07445724B2 Method for manufacturing printing plate 有权
标题翻译：印版制造方法
公开(公告)号：US07445724B2
公开(公告)日：2008-11-04
申请号：US11416016
申请日：2006-05-02
申请人： Oh Nam Kwon , Heung Lyul Cho
发明人： Oh Nam Kwon , Heung Lyul Cho
IPC分类号： B44C1/22
CPC分类号： G03F7/00
摘要： A method for manufacturing a printing plate to acheive a precise and fine pattern by minimizing a variation of etching critical dimension is disclosed. The method uses a hard mask having an opening on an insulating substrate to form a first trench having a first depth in the insulating substrate. A first etching stopper and a first photoresist may be applied on a surface of the insulating substrate including the first trench for patterning the first photoresist by exposing the first photoresist. Likewise, a second and third trench may be formed.
摘要翻译：公开了一种通过最小化蚀刻临界尺寸的变化来制造印版以获得精确和精细图案的方法。该方法使用在绝缘基板上具有开口的硬掩模，以在绝缘基板中形成具有第一深度的第一沟槽。第一蚀刻停止器和第一光致抗蚀剂可以施加在包括第一沟槽的绝缘基板的表面上，用于通过暴露第一光致抗蚀剂来图案化第一光致抗蚀剂。类似地，可以形成第二和第三沟槽。

48. 发明授权

US07556988B2 Thin film transistor substrate of horizontal electric field type liquid crystal display device and fabricating method thereof 有权
标题翻译：水平电场型液晶显示装置薄膜晶体管基板及其制造方法
公开(公告)号：US07556988B2
公开(公告)日：2009-07-07
申请号：US11345370
申请日：2006-02-02
申请人： Byung Chul Ahn , Oh Nam Kwon , Heung Lyul Cho
发明人： Byung Chul Ahn , Oh Nam Kwon , Heung Lyul Cho
IPC分类号： H01L21/82
CPC分类号： H01L27/124 , G02F1/134363 , G02F1/136213 , G02F1/1368 , G02F2001/136295 , H01L27/1288
摘要： A thin film transistor substrate of horizontal electric field type includes: a gate line and a first common line formed on a substrate to be in parallel to each other; a data line crossing the gate line and the first common line with a gate insulating film therebetween to define a pixel area; a second common line crossing the first common line having the gate insulating film therebetween; a thin film transistor connected to the gate line and the data line; a common electrode extending from the second common line in said pixel area; a pixel electrode that is parallel to the common electrode and the second common line; a protective film for covering the thin film transistor; a gate pad having a lower gate pad electrode connected to an upper gate pad electrode through a first contact hole; a common pad having a lower common pad electrode connected to an upper common pad electrode through a second contact hole; and a data pad having a lower data pad electrode connected to an upper data pad electrode provided within a third contact hole.
摘要翻译：水平电场型薄膜晶体管基板包括：形成在彼此平行的基板上的栅极线和第一公共线; 跨越所述栅极线和所述第一公共线的数据线，其间具有栅极绝缘膜，以限定像素区域; 第二公共线与其间具有栅绝缘膜的第一公共线交叉; 连接到栅极线和数据线的薄膜晶体管; 在所述像素区域中从所述第二公共线延伸的公共电极; 平行于公共电极和第二公共线的像素电极; 用于覆盖薄膜晶体管的保护膜; 栅极焊盘，其具有通过第一接触孔连接到上部栅极焊盘电极的下部栅极焊盘电极; 公共焊盘，其具有通过第二接触孔连接到上公共焊盘电极的下公共焊盘电极; 以及数据焊盘，其具有连接到设置在第三接触孔内的上数据焊盘电极的下数据焊盘电极。

49. 发明授权

US07413938B2 Thin film transistor array substrate and method of manufacturing the same 有权
标题翻译：薄膜晶体管阵列基板及其制造方法
公开(公告)号：US07413938B2
公开(公告)日：2008-08-19
申请号：US11706392
申请日：2007-02-15
申请人： Soon Sung Yoo , Heung Lyul Cho
发明人： Soon Sung Yoo , Heung Lyul Cho
IPC分类号： H01L21/00
CPC分类号： H01L27/1248 , H01L27/124 , H01L27/1255 , H01L29/458
摘要： A thin film transistor array substrate includes a gate pattern on a substrate. The gate pattern includes a gate electrode, a gate line connected to the gate electrode, and a lower gate pad electrode connected to the gate line. A source/drain pattern includes a source electrode and a drain electrode, a data line connected to the source electrode, and a lower data pad electrode connected to the data line. A semiconductor pattern is formed beneath the source/drain pattern. A transparent electrode pattern includes a pixel electrode connected to the drain electrode, an upper gate pad electrode connected to the lower gate pad electrode, and an upper data pad electrode connected to the lower data pad electrode. The thin film array substrate further includes a gate insulating pattern and a passivation film pattern stacked at remaining areas excluding areas within which the transparent electrode pattern is formed.
摘要翻译：薄膜晶体管阵列基板在基板上包括栅极图案。栅极图案包括栅电极，连接到栅电极的栅极线和连接到栅极线的下栅极焊盘电极。源极/漏极图案包括源电极和漏电极，连接到源电极的数据线和连接到数据线的下数据焊盘电极。在源极/漏极图案之下形成半导体图案。透明电极图案包括连接到漏电极的像素电极，连接到下栅极焊盘电极的上栅极焊盘电极和连接到下数据焊盘电极的上数据焊盘电极。薄膜阵列基板还包括层叠在除了形成透明电极图案的区域之外的其余区域的栅极绝缘图案和钝化膜图案。

50. 发明授权

US07206057B2 Liquid crystal display panel and fabricating method thereof 有权
标题翻译：液晶显示面板及其制造方法
公开(公告)号：US07206057B2
公开(公告)日：2007-04-17
申请号：US10981542
申请日：2004-11-05
申请人： Soon Sung Yoo , Youn Gyoung Chang , Heung Lyul Cho
发明人： Soon Sung Yoo , Youn Gyoung Chang , Heung Lyul Cho
IPC分类号： G02F1/1339 , G02F1/1337
CPC分类号： H01L27/1288 , G02F1/133707 , G02F1/13394 , G02F1/13458 , G02F2001/136231 , H01L27/1214
摘要： A liquid crystal display (LCD) panel is fabricated in a simplified process. The LCD panel includes a thin film transistor (TFT) array substrate with a gate and data lines crossing each other to define a pixel area, a TFT at the crossings of the gate and data lines, a protective film, and a pixel electrode connected to the TFT and formed within a pixel opening that is arranged at the pixel area and formed through the protective film and a gate insulating film. A color filter array substrate is joined to the TFT array substrate. A pattern spacer is between the TFT and color filter array substrate and overlaps at least one of the gate line, the data line, and the thin film transistor. A rib is formed from the same layer as the pattern spacer and overlaps the pixel electrode. Liquid crystal material is provided within the LCD panel.
摘要翻译：以简化的工艺制造液晶显示器（LCD）面板。 LCD面板包括薄膜晶体管（TFT）阵列基板，栅极和数据线彼此交叉以限定像素区域，在栅极和数据线的交叉处的TFT，保护膜和连接到 TFT形成在像素区域内，并形成在像素区域并形成在保护膜和栅极绝缘膜上的像素开口内。滤色器阵列基板连接到TFT阵列基板。图案间隔物位于TFT和滤色器阵列基板之间，并与栅极线，数据线和薄膜晶体管中的至少一个重叠。肋由与图案间隔物相同的层形成，并与像素电极重叠。液晶材料设置在LCD面板内。

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