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41. 发明公开

EP3314044A1 HIGH PRESSURE REACTOR AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS IN SUPERCRITICAL AMMONIA 有权
标题翻译：超高压反应器及超临界氨生长Ⅲ族氮化物晶体的方法
公开(公告)号：EP3314044A1
公开(公告)日：2018-05-02
申请号：EP16736703.6
申请日：2016-06-27
申请人： SixPoint Materials, Inc. , Seoul Semiconductor Co., Ltd.
发明人： HASHIMOTO, Tadao
IPC分类号： C30B7/10 , C30B29/40 , B01J3/00 , B01J3/04 , B01J3/06
CPC分类号： C30B29/406 , B01J3/008 , B01J3/042 , C30B7/105 , Y02P20/544
摘要： Provided is a high-pressure reactor suitable for a high-pressure process using supercritical ammonia grow bulk crystal of group III nitride having lateral dimension larger than 2 inches or to form various transition metal nitrides. The reactor has nutrient distributed along the reactor's longitudinal axis and seed material positioned at the reactor's inner wall and along the reactor's longitudinal axis. Nutrient diffuses through supercritical ammonia from the reactor's longitudinal axis and deposits on the seed material positioned by the reactor's inner wall. Both the nutrient and seed material are heated by the same heater. Material growth can primarily be due to material diffusion through supercritical ammonia. This configuration and methodology reduce convective movement of supercritical ammonia due to temperature differential, providing a more quiescent environment in which group III nitride or transition metal nitride is formed.

42. 发明授权

EP2291551B1 HIGH-PRESSURE VESSEL FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS USING HIGH-PRESSURE VESSEL AND GROUP III NITRIDE CRYSTAL 有权转让
标题翻译：用于生长III族氮化物晶体的高压容器和使用高压容器和III族氮化物晶体生长III族氮化物晶体的方法
公开(公告)号：EP2291551B1
公开(公告)日：2018-04-25
申请号：EP09759459.2
申请日：2009-06-04
申请人： SixPoint Materials, Inc.
发明人： HASHIMOTO, Tadao , LETTS, Edward , IKARI, Masanori
IPC分类号： B32B15/01 , C30B7/10 , C30B29/40 , C30B35/00 , B01J3/04
CPC分类号： C30B7/105 , B32B15/01 , C30B7/10 , C30B29/403 , C30B29/406 , C30B35/002 , Y10T428/12028
摘要： The present invention discloses a high-pressure vessel of large size formed with a limited size of e.g. Ni-Cr based precipitation hardenable superalloy. The vessel may have multiple zones. For instance, the high-pressure vessel may be divided into at least three regions with flow-restricting devices and the crystallization region is set higher temperature than other regions. This structure helps to reliably seal both ends of the high-pressure vessel, and at the same time, may help to greatly reduce unfavorable precipitation of group III nitride at the bottom of the vessel. This invention also discloses novel procedures to grow crystals with improved purity, transparency and structural quality. Alkali metal-containing mineralizers are charged with minimum exposure to oxygen and moisture until the high-pressure vessel is filled with ammonia. Several methods to reduce oxygen contamination during the process steps are presented. Also, back etching of seed crystals and a new temperature ramping scheme to improve structural quality are disclosed.

43. 发明授权

EP2286007B1 METHOD FOR TESTING GALLIUM NITRIDE WAFERS AND METHOD FOR PRODUCING GALLIUM NITRIDE WAFERS 有权转让
标题翻译：测试氮化镓晶片的方法及生产氮化镓晶片的方法
公开(公告)号：EP2286007B1
公开(公告)日：2018-04-04
申请号：EP09762938.0
申请日：2009-06-12
申请人： SixPoint Materials, Inc.
发明人： HASHIMOTO, Tadao , IKARI, Masanori , LETTS, Edward
IPC分类号： C30B7/10 , C30B29/40 , H01L21/66
CPC分类号： G01R31/2601 , C30B7/10 , C30B29/403 , H01L22/20 , H01L29/2003 , H01L2924/0002 , H01L2924/00
摘要： The present invention discloses a new testing method of group III-nitride wafers. By utilizing the ammonothermal method, GaN or other Group III-nitride wafers can be obtained by slicing the bulk GaN ingots. Since these wafers originate from the same ingot, these wafers have similar properties/qualities. Therefore, properties of wafers sliced from an ingot can be estimated from measurement data obtained from selected number of wafers sliced from the same ingot or an ingot before slicing. These estimated properties can be used for product certificate of untested wafers. This scheme can reduce a significant amount of time, labor and cost related to quality control.

44. 发明公开

EP2900850A1 GROUP III NITRIDE WAFERS AND FABRICATION METHOD AND TESTING METHOD 有权转让
标题翻译： III族氮化物晶片和方法和测试程序
公开(公告)号：EP2900850A1
公开(公告)日：2015-08-05
申请号：EP13712085.3
申请日：2013-03-13
申请人： Sixpoint Materials Inc. , Seoul Semiconductor Co., Ltd.
发明人： HASHIMOTO, Tadao
IPC分类号： C30B7/10 , C30B29/40 , H01L21/66 , G01N23/201
CPC分类号： G01N23/207 , B24B37/044 , C01B21/0632 , C01P2002/74 , C30B7/105 , C30B29/403 , C30B29/406 , C30B33/00 , C30B33/06 , H01L21/0201 , H01L21/30625 , H01L21/78 , H01L22/12 , H01L29/045 , H01L29/2003 , H01L2924/0002 , H01L2924/00
摘要： The invention provides, in one instance, a group III nitride wafer sliced from a group III nitride ingot, polished to remove the surface damage layer and tested with x-ray diffraction. The x-ray incident beam is irradiated at an angle less than 15 degree and diffraction peak intensity is evaluated. The group III nitride wafer passing this test has sufficient surface quality for device fabrication. The invention also provides, in one instance, a method of producing group III nitride wafer by slicing a group III nitride ingot, polishing at least one surface of the wafer, and testing the surface quality with x-ray diffraction having an incident beam angle less than 15 degree to the surface. The invention also provides, in an instance, a test method for testing the surface quality of group III nitride wafers using x-ray diffraction having an incident beam angle less than 15 degree to the surface.

45. 发明公开

EP2890537A1 GROUP III NITRIDE WAFER AND ITS PRODUCTION METHOD 审中-公开
标题翻译： III族氮化物晶片及其制造方法
公开(公告)号：EP2890537A1
公开(公告)日：2015-07-08
申请号：EP13715053.8
申请日：2013-03-15
申请人： Sixpoint Materials Inc. , Seoul Semiconductor Co., Ltd.
发明人： HASHIMOTO, Tadao , LETTS, Edward , HOFF, Sierra
IPC分类号： B28D5/04 , B24B1/04 , C30B7/10 , C30B29/40 , C30B33/10 , H01L21/02
CPC分类号： H01L29/201 , C30B7/105 , C30B29/403 , C30B29/406 , C30B33/00 , C30B33/10 , H01L21/02013 , H01L21/02019 , H01L29/2003
摘要： The present invention discloses a group III nitride wafer such as GaN, AlN, InN and their alloys having one surface visually distinguishable from the other surface. After slicing of the wafer from a bulk crystal of group III nitride with a mechanical method such as multiple wire saw, the wafer is chemically etched so that one surface of the wafer is visually distinguishable from the other surface. The present invention also discloses a method of producing such wafers.

46. 发明公开

EP2888390A1 A BISMUTH-DOPED SEMI-INSULATING GROUP III NITRIDE WAFER AND ITS PRODUCTION METHOD 审中-公开
标题翻译： WISMUT掺杂半绝缘III族氮化物晶片和PROCESS FOR PRODUCING
公开(公告)号：EP2888390A1
公开(公告)日：2015-07-01
申请号：EP13711762.8
申请日：2013-02-28
申请人： Sixpoint Materials Inc. , Seoul Semiconductor Co., Ltd.
发明人： HASHIMOTO, Tadao , LETTS, Edward , HOFF, Sierra
IPC分类号： C30B29/40 , C30B7/10 , C30B28/04 , C30B9/00
CPC分类号： C30B7/105 , B24B37/042 , B28D5/00 , C30B9/00 , C30B28/04 , C30B29/403 , H01L21/02013 , H01L21/02389 , H01L29/2003 , H01L29/207 , H01L29/22
摘要： The present invention discloses a semi-insulating wafer of Ga
x A1
Y In
1-x-y N(0≤x≤1,0≤x+y≤1) which is doped with bismuth (Bi). The semi-insulating wafer has the resistivity of 10
4 ohm -cm or more. Although it is very difficult to obtain a single crystal ingot of group III nitride, the ammonothermal method can grow highly-oriented poly or single crystal ingot of group III nitride having the density of dislocations/grain boundaries less than 10
5 cm
-2 . The invention also disclose the method of fabricating the semi-insulating group III nitride bulk crystals and wafers.

47. 发明公开

EP2724356A1 ULTRACAPACITORS WITH ELECTRODES CONTAINING TRANSITION METAL NITRIDE 审中-公开
标题翻译： WITH PADS含锂过渡金属氮化物超级电容器
公开(公告)号：EP2724356A1
公开(公告)日：2014-04-30
申请号：EP12730334.5
申请日：2012-06-15
申请人： Sixpoint Materials Inc.
发明人： HASHIMOTO, Tadao
IPC分类号： H01G9/22 , H01G9/042
CPC分类号： H01G11/30 , B82Y30/00 , C01B21/0615 , C01B21/0617 , C01P2004/64 , C01P2006/12 , H01G9/042 , H01G9/058 , H01G11/12 , H01G11/50 , H01G11/86 , Y02E60/13 , Y02P20/544 , Y02T10/7022 , Y10T29/417 , Y10T428/2982 , Y10T428/2991 , Y10T428/2993
摘要： The present invention discloses a method of synthesizing transition metal nitride by using supercritical ammonia. Transition metal nitride such as vanadium nitride, molybdenum nitride, titanium nitride, nickel nitride, neodymium nitride, iron nitride, etc. can be synthesized in supercritical ammonia with reducing mineralizers such as potassium, sodium, lithium, magnesium, calcium, and aluminum. Since supercritical ammonia has characteristics of both gas and liquid, it can over complicated fine structure or fine particles. The new method is suitable for forming a protective coating on complicated structure or forming micro- to nano-sized particles.

48. 发明公开

EP2723680A1 SYNTHESIS METHOD OF TRANSITION METAL NITRIDE AND TRANSITION METAL NITRIDE 审中-公开
标题翻译：法的合成与过渡金属氮化物的过渡金属氮化物
公开(公告)号：EP2723680A1
公开(公告)日：2014-04-30
申请号：EP12731245.2
申请日：2012-06-15
申请人： Sixpoint Materials Inc.
发明人： HASHIMOTO, Tadao
IPC分类号： C01B21/06
CPC分类号： H01G11/30 , B82Y30/00 , C01B21/0615 , C01B21/0617 , C01P2004/64 , C01P2006/12 , H01G9/042 , H01G9/058 , H01G11/12 , H01G11/50 , H01G11/86 , Y02E60/13 , Y02P20/544 , Y02T10/7022 , Y10T29/417 , Y10T428/2982 , Y10T428/2991 , Y10T428/2993
摘要： The present invention discloses a method of synthesizing transition metal nitride by using supercritical ammonia. Transition metal nitride such as vanadium nitride, molybdenum nitride, titanium nitride, nickel nitride, neodymium nitride, iron nitride, etc. can be synthesized in supercritical ammonia with reducing mineralizers such as potassium, sodium, lithium, magnesium, calcium, and aluminum. Since supercritical ammonia has characteristics of both gas and liquid, it can cover complicated fine structure or fine particles. The new method is suitable for forming a protective coating on complicated structure or forming micro- to nano-sized particles.

49. 发明公开

EP2291551A1 HIGH-PRESSURE VESSEL FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS USING HIGH-PRESSURE VESSEL AND GROUP III NITRIDE CRYSTAL 有权转让
标题翻译：高压容器用于育种III族氮化物晶体和方法繁殖的III族氮化物晶体使用高压力容器，III族氮化物晶体
公开(公告)号：EP2291551A1
公开(公告)日：2011-03-09
申请号：EP09759459.2
申请日：2009-06-04
申请人： Sixpoint Materials Inc.
发明人： HASHIMOTO, Tadao , LETTS, Edward , IKARI, Masanori
IPC分类号： C30B7/10 , C30B29/40 , C30B35/00 , B01J3/04
CPC分类号： C30B7/105 , B32B15/01 , C30B7/10 , C30B29/403 , C30B29/406 , C30B35/002 , Y10T428/12028
摘要： The present invention discloses a high-pressure vessel of large size formed with a limited size of e.g. Ni—Cr based precipitation hardenable superalloy. The vessel may have multiple zones. For instance, the high-pressure vessel may be divided into at least three regions with flow-restricting devices and the crystallization region is set higher temperature than other regions. This structure helps to reliably seal both ends of the high-pressure vessel, and at the same time, may help to greatly reduce unfavorable precipitation of group III nitride at the bottom of the vessel. This invention also discloses novel procedures to grow crystals with improved purity, transparency and structural quality. Alkali metal-containing mineralizers are charged with minimum exposure to oxygen and moisture until the high-pressure vessel is filled with ammonia. Several methods to reduce oxygen contamination during the process steps are presented. Also, back etching of seed crystals and a new temperature ramping scheme to improve structural quality are disclosed.
摘要翻译：本发明光盘解除与E.G.的有限的尺寸形成，大尺寸的高压容器镍铬基于沉淀硬化超合金。该容器可以有多个区域。例如，在高压容器可以被划分成至少三个区域与流量限制装置和结晶区域比其它区域设置更高的温度。这种结构有助于可靠地密封两个高压容器的端部，并且在所述的Sametime，可以有助于大大减少III族氮化物的不利沉淀在容器的底部。本发明因此无盘新颖程序具有改进的纯度，透明性和结构质量生长晶体。含有碱金属的矿化剂的收费与最小曝光氧和水分，直到高压容器中填充有氨。几种方法来减少氧污染时的过程步骤的叙述。所以，籽晶的背面蚀刻和一个新的温度斜坡方案，以提高结构的质量是游离缺失光盘。

50. 发明公开

EP2286007A1 METHOD FOR TESTING GROUP-III NITRIDE WAFERS AND GROUP III-NITRIDE WAFERS WITH TEST DATA 有权转让
标题翻译：方法GROUP III NITRIDWAFERN和第三组NITRIDWAFER与测试数据测试
公开(公告)号：EP2286007A1
公开(公告)日：2011-02-23
申请号：EP09762938.0
申请日：2009-06-12
申请人： Sixpoint Materials, Inc.
发明人： HASHIMOTO, Tadao , IKARI, Masanori , LETTS, Edward
IPC分类号： C30B29/40 , H01L21/66
CPC分类号： G01R31/2601 , C30B7/10 , C30B29/403 , H01L22/20 , H01L29/2003 , H01L2924/0002 , H01L2924/00
摘要： The present invention discloses a new testing method of group III-nitride wafers. By utilizing the ammonothermal method, GaN or other Group III-nitride wafers can be obtained by slicing the bulk GaN ingots. Since these wafers originate from the same ingot, these wafers have similar properties/qualities. Therefore, properties of wafers sliced from an ingot can be estimated from measurement data obtained from selected number of wafers sliced from the same ingot or an ingot before slicing. These estimated properties can be used for product certificate of untested wafers. This scheme can reduce a significant amount of time, labor and cost related to quality control.

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