专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明授权

US09112224B2 Energy storage device and method for manufacturing the same 有权
标题翻译：储能装置及其制造方法
公开(公告)号：US09112224B2
公开(公告)日：2015-08-18
申请号：US13163879
申请日：2011-06-20
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： H01M4/38 , H01G11/06 , H01G11/50 , H01M4/134 , H01M4/36 , H01M4/40 , H01M4/04 , H01M10/052 , H01M4/02
CPC分类号： H01M4/386 , H01G11/06 , H01G11/30 , H01G11/50 , H01G11/66 , H01G11/76 , H01M4/0404 , H01M4/0419 , H01M4/0426 , H01M4/0471 , H01M4/134 , H01M4/366 , H01M4/405 , H01M4/661 , H01M10/052 , H01M2004/021 , Y02E60/122 , Y02E60/13 , Y02P70/54 , Y02T10/7011 , Y02T10/7022 , Y10T29/417 , Y10T29/49108 , Y10T29/49115
摘要： Provided are an energy storage device including an electrode in which lithium is introduced into a silicon layer and a method for manufacturing the energy storage device. A silicon layer is formed over a current collector, a solution including lithium is applied on the silicon layer, and heat treatment is performed thereon; thus, at least lithium can be introduced into the silicon layer. By using the solution including lithium, even when the silicon layer includes a plurality of silicon microparticles, the solution including lithium can enter a space between the microparticles and lithium can be introduced into the silicon microparticles which are in contact with the solution including lithium. Moreover, even when the silicon layer is a thin silicon film or includes a plurality of whiskers or whisker groups, the solution can be uniformly applied; accordingly, lithium can be included in silicon easily.
摘要翻译：提供了一种能量存储装置，其包括将锂引入硅层的电极和能量存储装置的制造方法。在集电器上形成硅层，将包含锂的溶液施加在硅层上，对其进行热处理; 因此，至少可以将锂引入到硅层中。通过使用包含锂的溶液，即使当硅层包括多个硅微粒时，包含锂的溶液可以进入微粒之间的空间，并且可以将锂引入与包括锂的溶液接触的硅微粒中。此外，即使当硅层是薄的硅膜或者包括多个晶须或晶须基团时，也可以均匀地施加溶液; 因此，锂可以容易地包含在硅中。

42. 发明授权

US09112036B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US09112036B2
公开(公告)日：2015-08-18
申请号：US13482398
申请日：2012-05-29
申请人： Junichi Koezuka , Shinji Ohno , Yuichi Sato , Shunpei Yamazaki
发明人： Junichi Koezuka , Shinji Ohno , Yuichi Sato , Shunpei Yamazaki
IPC分类号： H01L21/8232 , H01L29/786
CPC分类号： H01L29/7869
摘要： A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. In a manufacturing method of the transistor including the oxide semiconductor film including a channel formation region, an insulating film including a metal element is formed over the oxide semiconductor film, and low-resistance regions in which a dopant added through the insulating film by an implantation method is included are formed in the oxide semiconductor film. The channel formation region is positioned between the low-resistance regions in the channel length direction.
摘要翻译：提供了具有良好的导通状态特性的使用氧化物半导体的晶体管。提供了包括能够进行高速响应和高速运行的晶体管的高性能半导体器件。在包括具有沟道形成区域的氧化物半导体膜的晶体管的制造方法中，在氧化物半导体膜上形成包含金属元素的绝缘膜，以及通过注入在绝缘膜上添加的掺杂剂的低电阻区域包含的方法形成在氧化物半导体膜中。沟道形成区域位于沟道长度方向的低电阻区域之间。

43. 发明授权

US09099395B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09099395B2
公开(公告)日：2015-08-04
申请号：US13366933
申请日：2012-02-06
申请人： Masayuki Sakakura , Shunpei Yamazaki
发明人： Masayuki Sakakura , Shunpei Yamazaki
IPC分类号： H01L21/00 , H01L27/28 , H01L29/786 , H01L27/12 , H01L29/423
CPC分类号： H01L29/78645 , H01L27/12 , H01L27/124 , H01L27/283 , H01L29/42384 , H01L29/78696
摘要： It is an object to provide a transistor having a new multigate structure in which operating characteristics and reliability are improved. In a transistor having a multigate structure, which includes two gate electrodes electrically connected to each other and a semiconductor layer including two channel regions connected in series formed between a source region and a drain region, and a high concentration impurity region is formed between the two channel regions; the channel length of the channel region adjacent to the source region is longer than the channel length of the channel region adjacent to the drain region.
摘要翻译：本发明的目的是提供一种具有新的多重结构的晶体管，其中提高了操作特性和可靠性。在具有多重结构的晶体管中，其包括彼此电连接的两个栅电极和包括在源区和漏区之间串联连接的两个沟道区的半导体层，并且在两者之间形成高浓度杂质区渠道区域; 与源极区域相邻的沟道区域的沟道长度比与漏极区域相邻的沟道区域的沟道长度长。

44. 发明授权

US09093328B2 Semiconductor device having an oxide semiconductor with a crystalline region and manufacturing method thereof 有权
标题翻译：具有结晶区域的氧化物半导体的半导体装置及其制造方法
公开(公告)号：US09093328B2
公开(公告)日：2015-07-28
申请号：US12938533
申请日：2010-11-03
申请人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake
IPC分类号： H01L29/12 , H01L27/12 , H01L29/786 , H01L21/02
CPC分类号： H01L27/1225 , H01L21/02603 , H01L27/0883 , H01L27/1251 , H01L27/127 , H01L27/1288 , H01L29/045 , H01L29/24 , H01L29/7869 , H01L29/78693 , H01L29/78696
摘要： An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. An intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from an oxide semiconductor and which has a larger energy gap than a silicon semiconductor is used. Electrical characteristics of the transistors can be controlled by controlling the potential of a pair of conductive films which are provided on opposite sides from each other with respect to the oxide semiconductor layer, each with an insulating film arranged therebetween, so that the position of a channel formed in the oxide semiconductor layer is determined.
摘要翻译：晶体管使用本征或基本上固有的并且包括氧化物半导体层的表面部分中的结晶区域的氧化物半导体层。使用从氧化物半导体去除作为电子给体（供体）的杂质并且具有比硅半导体更大的能隙的本征或本质上的本征半导体。可以通过控制一对导电膜的电位来控制晶体管的电特性，所述一对导电膜相对于氧化物半导体层彼此相对设置，每个具有布置在其间的绝缘膜，使得沟道的位置确定在氧化物半导体层中形成的氧化物半导体层。

45. 发明授权

US09048203B2 Light emitting device, method of manufacturing the same, and manufacturing apparatus therefor 有权
公开(公告)号：US09048203B2
公开(公告)日：2015-06-02
申请号：US13177647
申请日：2011-07-07
申请人： Shunpei Yamazaki , Toshiji Hamatani , Toru Takayama
发明人： Shunpei Yamazaki , Toshiji Hamatani , Toru Takayama
IPC分类号： H01L33/00 , H01L27/32 , H01L21/67 , H01L51/50 , H01L51/56 , H01L51/52
CPC分类号： H01L27/3211 , H01L21/67207 , H01L27/3209 , H01L27/3218 , H01L27/322 , H01L27/3244 , H01L27/3248 , H01L27/3258 , H01L27/3281 , H01L51/5036 , H01L51/504 , H01L51/5237 , H01L51/524 , H01L51/5253 , H01L51/5284 , H01L51/56 , H01L2251/5315
摘要： A light emitting device having high definition, a high aperture ratio, and high reliability is provided. The present invention achieves high definition and a high aperture ratio with a full color flat panel display using red, green, and blue color emission light by intentionally forming laminate portions, wherein portions of different organic compound layers of adjacent light emitting elements overlap with each other, without depending upon the method of forming the organic compound layers or the film formation precision.

46. 发明授权

US09047840B2 Display device and electronic appliance 有权
标题翻译：显示设备和电子设备
公开(公告)号：US09047840B2
公开(公告)日：2015-06-02
申请号：US13159593
申请日：2011-06-14
申请人： Jun Koyama , Shunpei Yamazaki
发明人： Jun Koyama , Shunpei Yamazaki
IPC分类号： G06F3/038 , G09G5/00 , G09G3/36 , G09G3/34
CPC分类号： G09G3/3666 , G09G3/3413 , G09G3/342 , G09G3/3659 , G09G2310/0235 , G09G2310/024 , G09G2310/0297 , G09G2320/0242 , G09G2360/16
摘要： Included are a display panel including first to third pixel regions and a driver circuit; a backlight portion divided into a first light source region where light is emitted in response to input of a video signal to the first pixel region, a second light source region where light is emitted in response to input of a video signal to the second pixel region, and a third light source region where light is emitted in response to input of a video signal to the third pixel region; a video signal selection circuit used to supply the video signals from plural memory circuits to the driver circuit; a control circuit that supplies a control signal for controlling the driver circuit; a sequence determination circuit that supplies a backlight control signal and a selection signal; and a random number generation circuit used for selection from colors in the sequence determination circuit.
摘要翻译：包括包括第一至第三像素区域和驱动器电路的显示面板; 响应于对第一像素区域的视频信号的输入而被分成发射光的第一光源区域的背光部分，响应于向第二像素区域输入视频信号而发光的第二光源区域以及响应于对第三像素区域的视频信号的输入而发光的第三光源区域; 视频信号选择电路，用于将来自多个存储电路的视频信号提供给驱动电路; 控制电路，其提供用于控制所述驱动电路的控制信号; 序列确定电路，其提供背光控制信号和选择信号; 以及用于从序列确定电路中的颜色中选择的随机数生成电路。

47. 发明授权

US09042161B2 Memory device 有权
标题翻译：内存设备
公开(公告)号：US09042161B2
公开(公告)日：2015-05-26
申请号：US13230184
申请日：2011-09-12
申请人： Jun Koyama , Shunpei Yamazaki
发明人： Jun Koyama , Shunpei Yamazaki
IPC分类号： G11C11/24 , G11C5/02 , G11C11/404 , G11C11/4097 , G11C8/08
CPC分类号： G11C11/407 , G11C5/025 , G11C8/08 , G11C11/404 , G11C11/4097
摘要： In a memory device, memory capacity per unit area is increased while a period in which data is held is ensured. The memory device includes a driver circuit provided over a substrate, and a plurality of memory cell arrays which are provided over the driver circuit and driven by the driver circuit. Each of the plurality of memory cell arrays includes a plurality of memory cells. Each of the plurality of memory cells includes a first transistor including a first gate electrode overlapping with an oxide semiconductor layer, and a capacitor including a source electrode or a drain electrode, a first gate insulating layer, and a conductive layer. The plurality of memory cell arrays is stacked to overlap. Thus, in the memory device, memory capacity per unit area is increased while a period in which data is held is ensured.
摘要翻译：在存储装置中，确保了保持数据的期间的每单位面积的存储容量。存储器件包括设置在衬底上的驱动器电路和设置在驱动器电路上并由驱动器电路驱动的多个存储单元阵列。多个存储单元阵列中的每一个包括多个存储单元。多个存储单元中的每一个包括第一晶体管，其包括与氧化物半导体层重叠的第一栅电极，以及包括源电极或漏电极，第一栅绝缘层和导电层的电容器。堆叠多个存储单元阵列以重叠。因此，在存储装置中，确保了保持数据的期间的每单位面积的存储容量。

48. 发明授权

US09030298B2 Thin semiconductor device and operation method of thin semiconductor device 有权
标题翻译：薄型半导体器件及薄型半导体器件的操作方法
公开(公告)号：US09030298B2
公开(公告)日：2015-05-12
申请号：US13424737
申请日：2012-03-20
申请人： Shunpei Yamazaki , Takeshi Osada , Yasuyuki Arai , Yuko Tachimura
发明人： Shunpei Yamazaki , Takeshi Osada , Yasuyuki Arai , Yuko Tachimura
IPC分类号： G06K9/00 , H01L23/66 , G06K19/07 , G06K7/00 , G06K19/077
CPC分类号： G06K19/072 , G06K7/0008 , G06K19/0723 , G06K19/07718 , G06K19/07749
摘要： The present invention provides a thin semiconductor device in which its security such as prevention of counterfeit or information leakage is to be enhanced. One feature of the present invention is a thin semiconductor device in which a plurality of thin film integrated circuits are mounted and in which at least one integrated circuit is different from the other integrated circuits in any one of a specification, layout, frequency for transmission or reception, a memory, a communication means, a communication rule and the like. According to the present invention, a thin semiconductor device tag having the plurality of thin film integrated circuits communicates with a reader/writer and at least one of the thin film integrated circuits receives a signal to write information in a memory, and the information written in the memory determines which of the thin film integrated circuits communicates.
摘要翻译：本发明提供一种薄型半导体器件，其中要防止伪造或信息泄漏的安全性得到提高。本发明的一个特征是薄型半导体器件，其中安装了多个薄膜集成电路，并且其中至少一个集成电路与其他集成电路不同，其中任何一个规格，布局，传输频率或接收，存储器，通信装置，通信规则等。根据本发明，具有多个薄膜集成电路的薄的半导体器件标签与读取器/写入器通信，并且至少一个薄膜集成电路接收将信息写入存储器的信号，并且写入的信息存储器确定薄膜集成电路中的哪一个通信。

49. 发明授权

US09029184B2 Photoelectric conversion device and method for manufacturing the same 有权
标题翻译：光电转换装置及其制造方法
公开(公告)号：US09029184B2
公开(公告)日：2015-05-12
申请号：US12405465
申请日：2009-03-17
申请人： Shunpei Yamazaki , Akihisa Shimomura
发明人： Shunpei Yamazaki , Akihisa Shimomura
IPC分类号： H01L31/18 , H01L31/0392 , H01L31/0224 , H01L31/0236 , H01L31/068 , H01L31/0687 , H01L31/072 , H01L31/0725 , H01L31/075 , H01L31/076 , H01L31/00
CPC分类号： H01L31/03921 , H01L21/76254 , H01L31/022425 , H01L31/0236 , H01L31/02363 , H01L31/068 , H01L31/0687 , H01L31/072 , H01L31/0725 , H01L31/075 , H01L31/076 , H01L31/18 , H01L31/1804 , H01L31/182 , H01L31/1896 , Y02E10/544 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： To provide a resource-saving photoelectric conversion device with excellent photoelectric conversion characteristics. Thin part of a single crystal semiconductor substrate, typically a single crystal silicon substrate, is detached to structure a photoelectric conversion device using a thin single crystal semiconductor layer, which is the detached thin part of the single crystal semiconductor substrate. The thin part of the single crystal semiconductor substrate is detached by a method in which a substrate is irradiated with ions accelerated by voltage, or a method in which a substrate is irradiated with a laser beam which makes multiphoton absorption occur. A so-called tandem-type photoelectric conversion device is obtained by stacking a unit cell including a non-single-crystal semiconductor layer over the detached thin part of the single crystal semiconductor substrate.
摘要翻译：提供具有优异光电转换特性的资源节约型光电转换装置。分离单晶半导体衬底（通常为单晶硅衬底）的薄部分，以使用作为单晶半导体衬底的分离薄的部分的薄单晶半导体层来构造光电转换器件。通过利用电压加速的离子照射基板的方法或者使用产生多光子吸收的激光束照射基板的方法来分离单晶半导体基板的薄部分。通过在单晶半导体衬底的分离薄的部分上堆叠包括非单晶半导体层的单位电池，可以获得所谓的串联型光电转换装置。

50. 发明授权

US09012993B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09012993B2
公开(公告)日：2015-04-21
申请号：US13549864
申请日：2012-07-16
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： H01L29/786 , H01L29/417 , H01L27/02 , H01L27/07 , H01L27/108 , H01L27/115 , H01L27/12 , H01L49/02 , G11C11/404
CPC分类号： H01L27/1255 , G11C11/404 , H01L27/0207 , H01L27/0733 , H01L27/10805 , H01L27/1085 , H01L27/10873 , H01L27/1156 , H01L27/1225 , H01L28/40 , H01L28/60 , H01L29/24 , H01L29/41733 , H01L29/78618 , H01L29/7869 , H01L29/78696
摘要： An object of the present invention is to provide a semiconductor device in which stored data can be held even when power is not supplied for a certain time. Another object is to increase the degree of integration of a semiconductor device and to increase the storage capacity per unit area. A semiconductor device is formed with a material capable of sufficiently reducing off-state current of a transistor, such as an oxide semiconductor material that is a wide-bandgap semiconductor. With the use of a semiconductor material capable of sufficiently reducing off-state current of a transistor, the semiconductor device can hold data for a long time. Furthermore, a wiring layer provided under a transistor, a high-resistance region in an oxide semiconductor film, and a source electrode are used to form a capacitor, thereby reducing the area occupied by the transistor and the capacitor.
摘要翻译：本发明的一个目的是提供一种即使在一定时间内没有供电也可以保存存储的数据的半导体器件。另一个目的是增加半导体器件的集成度并增加每单位面积的存储容量。半导体器件形成有能够充分降低诸如作为宽带隙半导体的氧化物半导体材料的晶体管的截止电流的材料。通过使用能够充分降低晶体管的截止电流的半导体材料，半导体器件可以长时间保存数据。此外，使用设置在晶体管下方的布线层，氧化物半导体膜中的高电阻区域和源电极来形成电容器，从而减小晶体管和电容器占据的面积。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式