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41. 发明申请

US20120206446A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20120206446A1
公开(公告)日：2012-08-16
申请号：US13367715
申请日：2012-02-07
申请人： Shunpei YAMAZAKI , Jun KOYAMA
发明人： Shunpei YAMAZAKI , Jun KOYAMA
IPC分类号： G06T15/00
CPC分类号： H04N13/366 , G02B27/2214 , H04N13/31 , H04N13/315 , H04N13/324
摘要： A display device includes a display panel including a matrix of pixel regions, and a shutter panel including a matrix of optical shutter regions each of which state is selected from a light-transmitting state and a light-shielding state. In a first display state, the display panel performs display regarding one pixel region as a display element unit, and each of the plurality of optical shutter regions in the shutter panel is brought into a light-transmitting state or a light-shielding state. In a second display state, the display panel performs display regarding at least two pixel regions as the display element unit, and each of the plurality of optical shutter regions in the shutter panel is brought into a light-transmitting state or a light-shielding state. As a result, the range of distance with which 3D images can be displayed can differ between the first display state and the second display state.
摘要翻译：显示装置包括包括像素区域矩阵的显示面板和包括光闸区域矩阵的快门面板，每个光闸区域的状态均选自透光状态和遮光状态。在第一显示状态下，显示面板执行关于一个像素区域的显示作为显示元件单元，并且快门面板中的多个光学快门区域中的每一个进入透光状态或遮光状态。在第二显示状态下，显示面板执行关于至少两个像素区域的显示作为显示元件单元，并且快门面板中的多个光学快门区域中的每一个进入透光状态或遮光状态。结果，可以显示3D图像的距离的范围可以在第一显示状态和第二显示状态之间不同。

42. 发明申请

US20120187396A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120187396A1
公开(公告)日：2012-07-26
申请号：US13355950
申请日：2012-01-23
申请人： Shunpei YAMAZAKI , Teruyuki FUJII , Sho NAGAMATSU
发明人： Shunpei YAMAZAKI , Teruyuki FUJII , Sho NAGAMATSU
IPC分类号： H01L29/786 , H01L21/44
CPC分类号： H01L29/7869 , H01L23/564 , H01L29/36 , H01L29/66742 , H01L29/66969 , H01L29/78606 , H01L29/78621 , H01L2924/0002 , H01L2924/00
摘要： A base insulating film is formed over a substrate. A first oxide semiconductor film is formed over the base insulating film, and then first heat treatment is performed to form a second oxide semiconductor film. Then, selective etching is performed to form a third oxide semiconductor film. An insulating film is formed over the first insulating film and the third oxide semiconductor film. A surface of the insulating film is polished to expose a surface of the third oxide semiconductor film, so that a sidewall insulating film is formed in contact with at least a side surface of the third oxide semiconductor film. Then, a source electrode and a drain electrode are formed over the sidewall insulating film and the third oxide semiconductor film. A gate insulating film and a gate electrode are formed.
摘要翻译：在基板上形成基极绝缘膜。在基底绝缘膜上形成第一氧化物半导体膜，然后进行第一热处理以形成第二氧化物半导体膜。然后，进行选择性蚀刻以形成第三氧化物半导体膜。绝缘膜形成在第一绝缘膜和第三氧化物半导体膜上。抛光绝缘膜的表面以暴露第三氧化物半导体膜的表面，使得形成与第三氧化物半导体膜的至少侧面接触的侧壁绝缘膜。然后，在侧壁绝缘膜和第三氧化物半导体膜上形成源电极和漏电极。形成栅极绝缘膜和栅电极。

43. 发明申请

US20120181522A1 LIGHT EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：US20120181522A1
公开(公告)日：2012-07-19
申请号：US13417551
申请日：2012-03-12
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Hisao IKEDA , Yasuo NAKAMURA , Keiko SAITO
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Hisao IKEDA , Yasuo NAKAMURA , Keiko SAITO
IPC分类号： H01L27/32
CPC分类号： H01L27/3272 , H01L27/1218 , H01L27/1222 , H01L27/3211 , H01L27/322 , H01L27/3244 , H01L27/3248 , H01L33/08 , H01L33/36 , H01L33/50 , H01L33/56 , H01L33/58 , H01L51/5052 , H01L51/5088 , H01L51/5092 , H01L51/5203 , H01L51/5212 , H01L51/5228 , H01L51/5237 , H01L51/5246 , H01L51/5253 , H01L51/5259 , H01L51/5262 , H01L51/5284 , H01L51/56 , H01L2251/5315
摘要： The present invention provides a light-emitting device comprising a first light-emitting element that emits red light, a second light-emitting element that emits green light, a third light-emitting element that emits blue light, and a color filter, where the color filter comprises a first coloring layer that selectively transmits red light, a second coloring layer that selectively transmits green light, and a third coloring layer that selectively transmits blue light, the first to third light-emitting elements respectively correspond to the first to third coloring layers, wherein each of the first to third light-emitting elements has a first electrode, an electroluminescent layer on the first electrode, and a second electrode on the electroluminescent layer, and wherein the electroluminescent layer includes a layer in contact with the second electrode, and a metal oxide or a benzoxazole derivative is included in the layer in contact with the second electrode.
摘要翻译：本发明提供一种包括发射红光的第一发光元件，发出绿光的第二发光元件，发出蓝光的第三发光元件和滤色器的发光器件，其中滤色器包括选择性地透射红光的第一着色层，选择性地透射绿光的第二着色层和选择性地透射蓝光的第三着色层，第一至第三发光元件分别对应于第一至第三着色层层，其中第一至第三发光元件中的每一个具有第一电极，第一电极上的电致发光层和电致发光层上的第二电极，并且其中电致发光层包括与第二电极接触的层，并且在与第二电极接触的层中包含金属氧化物或苯并恶唑衍生物。

44. 发明申请

US20120175610A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20120175610A1
公开(公告)日：2012-07-12
申请号：US13346072
申请日：2012-01-09
申请人： Shunpei YAMAZAKI
发明人： Shunpei YAMAZAKI
IPC分类号： H01L29/786 , H01L21/34
CPC分类号： H01L29/66969 , H01L21/477 , H01L29/7869
摘要： A manufacturing method of a semiconductor device includes the steps of: forming a gate electrode over a substrate; forming a gate insulating film over the gate electrode; forming an oxide semiconductor film; performing heat treatment to form a second oxide semiconductor film after the step of forming the first oxide semiconductor film; forming a first conductive film; forming a first resist mask including regions whose thicknesses are different; etching the second oxide semiconductor film and the first conductive film using the first resist mask to form a third oxide semiconductor film and a second conductive film; reducing the size of the first resist mask to form a second resist mask; selectively etching the second conductive film using the second resist mask to remove a part of the second conductive film so that a source electrode and a drain electrode are formed.
摘要翻译：半导体器件的制造方法包括以下步骤：在衬底上形成栅电极; 在栅电极上形成栅极绝缘膜; 形成氧化物半导体膜; 在形成第一氧化物半导体膜的步骤之后进行热处理以形成第二氧化物半导体膜; 形成第一导电膜; 形成包括厚度不同的区域的第一抗蚀剂掩模; 使用第一抗蚀剂掩模蚀刻第二氧化物半导体膜和第一导电膜，以形成第三氧化物半导体膜和第二导电膜; 减小第一抗蚀剂掩模的尺寸以形成第二抗蚀剂掩模; 使用第二抗蚀剂掩模选择性地蚀刻第二导电膜以去除第二导电膜的一部分，从而形成源电极和漏电极。

45. 发明申请

US20120175608A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120175608A1
公开(公告)日：2012-07-12
申请号：US13345795
申请日：2012-01-09
申请人： Shunpei YAMAZAKI
发明人： Shunpei YAMAZAKI
IPC分类号： H01L29/786 , H01L21/34
CPC分类号： H01L27/1288 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/467 , H01L21/469 , H01L21/477 , H01L27/1214 , H01L27/1259 , H01L27/127 , H01L29/66969 , H01L29/7869 , H01L29/78693
摘要： The semiconductor device includes a gate electrode over a substrate, a gate insulating layer over the gate electrode, an oxide semiconductor layer over the gate insulating layer, and a source electrode and a drain electrode over the oxide semiconductor layer. A length of part of an outer edge of the oxide semiconductor layer from an outer edge of the source electrode to an outer edge of the drain electrode is more than three times, preferably more than five times as long as a channel length of the semiconductor device. Further, oxygen is supplied from the gate insulating layer to the oxide semiconductor layer by heat treatment. In addition, an insulating layer is formed after the oxide semiconductor layer is selectively etched.
摘要翻译：该半导体器件包括：衬底上的栅电极，栅电极上的栅极绝缘层，栅极绝缘层上的氧化物半导体层，以及氧化物半导体层上的源电极和漏电极。从源电极的外边缘到漏电极的外边缘的氧化物半导体层的外边缘的一部分的长度是半导体器件的沟道长度的三倍以上，优选大于五倍。此外，通过热处理从栅极绝缘层向氧化物半导体层提供氧。此外，在氧化物半导体层被选择性蚀刻之后形成绝缘层。

46. 发明申请

US20120161125A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120161125A1
公开(公告)日：2012-06-28
申请号：US13330811
申请日：2011-12-20
申请人： Shunpei YAMAZAKI
发明人： Shunpei YAMAZAKI
IPC分类号： H01L29/12 , H01L21/336 , H01L21/425 , H01L29/78
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78618 , H01L29/78693
摘要： A semiconductor device capable of high speed operation is provided. Further, a highly reliable semiconductor device is provided. An oxide semiconductor having crystallinity is used for a semiconductor layer of a transistor. A channel formation region, a source region, and a drain region are formed in the semiconductor layer. The source region and the drain region are formed in such a manner that one or more of elements selected from rare gases and hydrogen are added to the semiconductor layer by an ion doping method or an ion implantation method with the use of a channel protective layer as a mask.
摘要翻译：提供能够进行高速运转的半导体装置。此外，提供了高度可靠的半导体器件。具有结晶性的氧化物半导体用于晶体管的半导体层。沟道形成区域，源极区域和漏极区域形成在半导体层中。源极区域和漏极区域以这样的方式形成，即通过使用沟道保护层的离子掺杂方法或离子注入方法将选自稀有气体和氢气中的一种或多种元素添加到半导体层中一个面具

47. 发明申请

US20120161124A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
公开(公告)号：US20120161124A1
公开(公告)日：2012-06-28
申请号：US13330801
申请日：2011-12-20
申请人： Shunpei YAMAZAKI
发明人： Shunpei YAMAZAKI
IPC分类号： H01L29/78 , H01L21/34
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/426 , H01L27/1203 , H01L27/1225 , H01L27/1229 , H01L29/04 , H01L29/0847 , H01L29/36 , H01L29/42364 , H01L29/42384 , H01L29/4908 , H01L29/66969 , H01L29/78621 , H01L29/78696
摘要： A semiconductor device in which fluctuation in electric characteristics due to miniaturization is less likely to be caused is provided. The semiconductor device includes an oxide semiconductor film including a first region, a pair of second regions in contact with side surfaces of the first region, and a pair of third regions in contact with side surfaces of the pair of second regions; a gate insulating film provided over the oxide semiconductor film; and a first electrode that is over the gate insulating film and overlaps with the first region. The first region is a CAAC oxide semiconductor region. The pair of second regions and the pair of third regions are each an amorphous oxide semiconductor region containing a dopant. The dopant concentration of the pair of third regions is higher than the dopant concentration of the pair of second regions.

48. 发明申请

US20120161122A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120161122A1
公开(公告)日：2012-06-28
申请号：US13330772
申请日：2011-12-20
申请人： Shunpei YAMAZAKI
发明人： Shunpei YAMAZAKI
IPC分类号： H01L29/78 , H01L21/34
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02631
摘要： A miniaturized semiconductor device including a transistor in which a channel formation region is formed using an oxide semiconductor film and variation in electric characteristics due to a short-channel effect is suppressed is provided. In addition, a semiconductor device whose on-state current is improved is provided. A semiconductor device is provided with an oxide semiconductor film including a pair of second oxide semiconductor regions which are amorphous regions and a first oxide semiconductor region located between the pair of second oxide semiconductor regions, a gate insulating film, and a gate electrode provided over the first oxide semiconductor region with the gate insulating film interposed therebetween. One or more kinds of elements selected from Group 15 elements such as nitrogen, phosphorus, and arsenic are added to the second oxide semiconductor regions.
摘要翻译：提供一种小型半导体器件，其包括使用氧化物半导体膜形成沟道形成区域并且由于短沟道效应引起的电特性的变化的晶体管。另外，提供了导通状态电流改善的半导体装置。半导体器件设置有氧化物半导体膜，该氧化物半导体膜包括一对非晶区域的第二氧化物半导体区域和位于一对第二氧化物半导体区域之间的第一氧化物半导体区域，栅极绝缘膜和设置在该第二氧化物半导体区域上的栅电极第一氧化物半导体区域，其间具有栅极绝缘膜。从第15族元素如氮，磷和砷中选出的一种或多种元素被添加到第二氧化物半导体区域。

49. 发明申请

US20120145799A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20120145799A1
公开(公告)日：2012-06-14
申请号：US13372877
申请日：2012-02-14
申请人： Jun KOYAMA , Shunpei YAMAZAKI
发明人： Jun KOYAMA , Shunpei YAMAZAKI
IPC分类号： G06K19/077
CPC分类号： G06K19/0723 , G06K19/0719
摘要： A semiconductor device with improved reliability, in which increase in power consumption can be reduced. The semiconductor device includes an antenna for transmitting and receiving a wireless signal to/from a communication device and at least first and second functional circuits electrically connected to the antenna. The first functional circuit includes a power supply control circuit for controlling power supply voltage output from a power supply circuit in the second functional circuit. A power supply control circuit in the second functional circuit includes a transistor of which first terminal is electrically connected to an output terminal of the power supply circuit and second terminal is electrically connected to a ground line. A gate terminal of the transistor is electrically connected to the power supply control circuit included in one functional circuit.
摘要翻译：具有可靠性提高的能够降低功耗增加的半导体装置。半导体器件包括用于向/从通信设备发送和接收无线信号的天线以及电连接到天线的至少第一和第二功能电路。第一功能电路包括用于控制从第二功能电路中的电源电路输出的电源电压的电源控制电路。第二功能电路中的电源控制电路包括晶体管，其第一端子电连接到电源电路的输出端子，并且第二端子电连接到接地线。晶体管的栅极端子电连接到包括在一个功能电路中的电源控制电路。

50. 发明申请

US20120122277A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE 有权
标题翻译：用于制造半导体器件的半导体器件和方法
公开(公告)号：US20120122277A1
公开(公告)日：2012-05-17
申请号：US13356044
申请日：2012-01-23
申请人： Shunpei YAMAZAKI , Kengo AKIMOTO
发明人： Shunpei YAMAZAKI , Kengo AKIMOTO
IPC分类号： H01L21/34
CPC分类号： H01L29/78696 , H01L21/02318 , H01L21/02323 , H01L21/0234 , H01L21/02565 , H01L29/247 , H01L29/4908 , H01L29/66969 , H01L29/7869 , H01L29/78693
摘要： An object is to provide favorable interface characteristics of a thin film transistor including an oxide semiconductor layer without mixing of an impurity such as moisture. Another object is to provide a semiconductor device including a thin film transistor having excellent electric characteristics and high reliability, and a method by which a semiconductor device can be manufactured with high productivity. A main point is to perform oxygen radical treatment on a surface of a gate insulating layer. Accordingly, there is a peak of the oxygen concentration at an interface between the gate insulating layer and a semiconductor layer, and the oxygen concentration of the gate insulating layer has a concentration gradient. The oxygen concentration is increased toward the interface between the gate insulating layer and the semiconductor layer.
摘要翻译：本发明的目的是提供一种薄膜晶体管的有利的界面特性，该薄膜晶体管包括氧化物半导体层，而不混入杂质如水分。另一个目的是提供一种包括具有优异的电特性和高可靠性的薄膜晶体管的半导体器件，以及可以以高生产率制造半导体器件的方法。要点是在栅极绝缘层的表面进行氧自由基处理。因此，在栅极绝缘层与半导体层之间的界面处存在氧浓度的峰值，并且栅极绝缘层的氧浓度具有浓度梯度。氧浓度朝向栅极绝缘层和半导体层之间的界面增加。

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