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41. 发明授权

US5159417A Semiconductor device having short channel field effect transistor with extended gate electrode structure and manufacturing method thereof 失效
标题翻译：具有扩展门电极结构的短路通道场效应晶体管的半导体器件及其制造方法
公开(公告)号：US5159417A
公开(公告)日：1992-10-27
申请号：US678636
申请日：1991-04-02
申请人： Hiroji Ozaki
发明人： Hiroji Ozaki
IPC分类号： H01L21/336 , H01L29/78
CPC分类号： H01L29/6659 , H01L29/66659 , H01L29/7831
摘要： A semiconductor device comprises a semiconductor substrate (1), a source region (5) and a drain region (6) a first gate electrode (4), a second gate electrode (8), an insulator layer (9) and a conductor layer (10). The semiconductor substrate (1) contains impurity of a first conductive type in a predetermined concentration. The source region (5) and the drain region (6) are formed and spaced on the main surface of the semiconductor substrate (1), and contains impurity of a second conductive type in a concentration which is 10 to 10.sup.3 times as large as that of the impurity of the first conductive type. The first gate electrode (4) is located between the source and drain regions (5) and (6) and formed on the main surface of the semiconductor substrate (1) with an insulating film (3) therebetween. The second gate electrode (8) is formed to have portions overlapping a portion of the source region (5) and a portion of the first gate electrode (4) with an insulating film (7 ) therebetween. The insulator layer (9) has an opening (20) through which surfaces of at least the first and second gate electrodes (4) and (8) are exposed. The conductor layer (10) electrically contacts the surfaces of the first and second gate electrodes (4) and (8) through the opening (20). The field effect transistor has a high current drive capacity and a high resistance to the hot carriers. The field effect transistor can have a gate length of a quarter micron order.
摘要翻译：半导体器件包括半导体衬底（1），源极区（5）和漏极区（6），第一栅电极（4），第二栅电极（8），绝缘体层（9）和导体层（10）。半导体衬底（1）含有预定浓度的第一导电类型的杂质。源极区域（5）和漏极区域（6）在半导体衬底（1）的主表面上形成并间隔开，并且含有浓度为10至103倍的浓度的第二导电类型的杂质的第一导电类型的杂质。第一栅极（4）位于源极和漏极区域（5）和（6）之间并且在半导体衬底（1）的主表面上形成有绝缘膜（3）。第二栅电极（8）形成为具有与源极区（5）的一部分和第一栅电极（4）的一部分之间的绝缘膜（7）重叠的部分。绝缘体层（9）具有至少第一和第二栅电极（4）和（8）的表面露出的开口（20）。导体层（10）通过开口（20）与第一和第二栅电极（4）和（8）的表面电接触。场效应晶体管具有高电流驱动能力和对热载流子的高电阻。场效应晶体管可以具有四分之一微米级的栅极长度。

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