会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 44. 发明授权
    • Method of making bipolar transistor
    • 制造双极晶体管的方法
    • US5739062A
    • 1998-04-14
    • US917467
    • 1997-08-26
    • Naohito YoshidaMasayuki Sakai
    • Naohito YoshidaMasayuki Sakai
    • H01L29/73H01L21/331H01L29/205H01L29/737
    • H01L29/66318
    • A method of fabricating a bipolar transistor includes successively growing a collector layer, a base layer, and a crystalline mask layer on a semiconductor substrate; forming an opening in the crystalline mask layer to expose a portion of the base layer; growing an emitter layer on the crystalline mask layer and on the base layer exposed in the opening of the mask layer; forming an emitter electrode on the emitter layer; removing part of the emitter layer using the emitter electrode as a mask; removing the crystalline mask layer; forming a first resist pattern for formation of base electrodes; forming base electrodes using the first resist pattern and the emitter electrode as masks; removing the first resist pattern; forming a second resist pattern for formation of collector electrodes covering base electrodes and the emitter electrode; using the second resist pattern as a mask, removing portions of the base layer and the collector layer; and forming collector electrodes in contact with the collector layer.
    • 制造双极晶体管的方法包括在半导体衬底上依次生长集电极层,基极层和结晶掩模层; 在所述结晶掩模层中形成开口以暴露所述基底层的一部分; 在所述结晶掩模层上和在所述掩模层的开口中暴露的所述基底层上生长发射极层; 在发射极层上形成发射电极; 使用发射电极作为掩模去除发射极层的一部分; 去除结晶掩模层; 形成用于形成基极的第一抗蚀图案; 使用第一抗蚀剂图案和发射极电极作为掩模形成基极; 去除第一抗蚀剂图案; 形成用于形成覆盖基极和发射极的集电极的第二抗蚀剂图案; 使用第二抗蚀剂图案作为掩模,去除基底层和集电体层的部分; 并形成与集电体层接触的集电极。