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    • 41. 发明授权
    • Semiconductor memory cell and semiconductor device
    • 半导体存储单元和半导体器件
    • US08861261B2
    • 2014-10-14
    • US13327458
    • 2011-12-15
    • Seung Hwan Kim
    • Seung Hwan Kim
    • G11C11/24H01L27/108
    • H01L27/10876H01L27/10885H01L27/10888
    • A technology is a semiconductor cell and a semiconductor device capable of reducing the coupling capacitance between adjacent bit lines by forming a bit line junction region in a separated island shape when forming a buried bit line, thereby improving characteristics of the semiconductor devices. The semiconductor cell includes a transistor including a gate and a gate junction region, a plurality of buried bit lines disposed to intersect the gate, and a plurality of bit line junction regions, each bit line junction region having an island shape formed between the buried bit lines and connected to the buried bit line.
    • 一种技术是通过在形成掩埋位线时形成分离岛形状的位线结区域,能够减小相邻位线之间的耦合电容,从而提高半导体器件的特性的半导体单元和半导体器件。 半导体单元包括晶体管,其包括栅极和栅极结区域,与栅极交叉设置的多个埋入位线以及多个位线结区域,每个位线结区域形成在掩埋位之间 线并连接到埋地线。
    • 45. 发明授权
    • Semiconductor device with vertical gate and method for manufacturing the same
    • 具有垂直栅极的半导体器件及其制造方法
    • US08507374B2
    • 2013-08-13
    • US12969537
    • 2010-12-15
    • Seung Hwan Kim
    • Seung Hwan Kim
    • H01L27/108H01L21/28
    • H01L27/10826H01L27/10885
    • A semiconductor device and a method for manufacturing the same are disclosed. The method for manufacturing the semiconductor device comprises: forming a plurality of first pillar patterns each of which includes a sidewall contact by selectively etching a semiconductor substrate; forming a buried bit line at a lower portion of a region between two neighboring first pillar patterns; forming a plurality of second pillar patterns by selectively etching upper portions of the first pillar patterns; and forming a gate coupling second pillar patterns arranged in a direction crossing the bit line, the gate enclosing the second pillar patterns.
    • 公开了一种半导体器件及其制造方法。 制造半导体器件的方法包括:通过选择性蚀刻半导体衬底,形成多个第一柱状图案,每个第一柱状图案包括侧壁接触; 在两个相邻的第一柱状图案之间的区域的下部形成掩埋位线; 通过选择性地蚀刻第一柱图案的上部来形成多个第二柱图案; 以及形成沿与所述位线交叉的方向布置的栅极耦合第二柱状图案,所述栅极包围所述第二柱状图案。
    • 48. 发明申请
    • SYSTEM AND METHOD FOR PROVIDING A SMART CARD-BASED WIDGET SERVICE, AND SMART CARD FOR THE SAME
    • 用于提供基于智能卡的宽带服务的系统和方法,以及用于其的智能卡
    • US20110263295A1
    • 2011-10-27
    • US13132255
    • 2010-07-08
    • Seung Hwan Kim
    • Seung Hwan Kim
    • H04W88/02
    • G06F8/38G06F9/451
    • A system and method provide a smart card-based widget service, and a smart card for the same. Status information including information about a service icon and an active status for at least one widget service embedded according to the specification of a user is set. A widget waiting screen image including the service icon of the widget service set in the active status is made and provided to the user terminal. A widget service corresponding to a specific icon is executed according to the selection of the user for the specific icon so that an execution screen image of the executed widget service is provided. A widget service for a waiting screen image is provided regardless of the type and the specification of a user terminal for the smart card. Even if the user terminal is replaced with new one, information of the smart card is maintained.
    • 一种系统和方法提供基于智能卡的小部件服务以及用于其的智能卡。 设置包括根据用户的说明书嵌入的至少一个小部件服务的关于服务图标的信息和活动状态的状态信息。 制作包括在活动状态中设置的小窗口服务的服务图标的窗口小部件等待屏幕图像并将其提供给用户终端。 根据特定图标的用户的选择来执行对应于特定图标的小部件服务,从而提供所执行的小部件服务的执行画面图像。 提供用于等待屏幕图像的小部件服务,而不管智能卡的用户终端的类型和规格如何。 即使用新的用户终端被替换,维护智能卡的信息。