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    • 46. 发明申请
    • Method of fabricating semiconductor device
    • 制造半导体器件的方法
    • US20110263124A1
    • 2011-10-27
    • US13067840
    • 2011-06-29
    • Shinichi HirasawaShinya Watanabe
    • Shinichi HirasawaShinya Watanabe
    • H01L21/28
    • H01L27/11521H01L29/40114H01L29/7881
    • A method of fabricating a semiconductor device according to one embodiment includes: forming a plurality of Si-based pattern portions above a semiconductor substrate, the plurality of Si-based pattern portions being adjacent in a direction substantially parallel to a surface of the semiconductor substrate via insulating films; forming a metal film above the plurality of Si-based pattern portions and the insulating films so as to contact with the plurality of Si-based pattern portions; processing whole areas or upper portions of the plurality of Si-based pattern portions into a plurality of silicide layers by a silicidation reaction between the plurality of Si-based pattern portions and the metal film by heat treatment; and removing the plurality of silicide layers formed above the insulating films by applying planarizing treatment to the plurality of silicide layers.
    • 根据一个实施例的制造半导体器件的方法包括:在半导体衬底之上形成多个Si基图案部分,所述多个Si基图案部分在基本上平行于半导体衬底的表面的方向上相邻的方向 绝缘膜; 在所述多个Si基图案部分和所述绝缘膜之上形成金属膜以与所述多个Si基图案部分接触; 通过多个Si基图案部分和金属膜之间的硅化反应将多个Si基图案部分的整个区域或上部处理成多个硅化物层; 以及通过对所述多个硅化物层进行平坦化处理来去除在所述绝缘膜上形成的所述多个硅化物层。
    • 48. 发明授权
    • High frequency module
    • 高频模块
    • US07711389B2
    • 2010-05-04
    • US10595782
    • 2004-10-21
    • Koji FurutaniShinya Watanabe
    • Koji FurutaniShinya Watanabe
    • H04M1/00
    • H04B1/0057H04B1/005H04B1/406H04B1/48
    • A high frequency module for transmitting and receiving, for example, communication signals of GSM/DCS/PCS/WCDMA systems through a single antenna, is provided at a relatively small size and low cost. The high frequency module includes a diplexer arranged to separate communication signals from the antenna into GSM communication signals in lower frequency bands and POS/DOS/WODMA communication signals in higher frequency bands, a diode switch circuit that is connected to a input and output terminal of the GSM communication signal of the diplexer and is arranged to switch transmission and reception of the GSM communication signal, and a multipoint GaAsIC switch that is connected to the GSM/DCS/PCS/WCDMA communication signals of the diplexer and is arranged to switch transmission and reception of these signals. The high frequency module switches the four types of communication signals by changing the patterns of controls signals VcG, VC1, and Vc2 that are applied to the diode switch circuit and the GaAsIC switch.
    • 以相对较小的尺寸和低成本提供用于例如通过单个天线发送和接收例如GSM / DCS / PCS / WCDMA系统的通信信号的高频模块。 高频模块包括:双工器,被配置为将来自天线的通信信号分离成较低频带的GSM通信信号和较高频带的POS / DOS / WODMA通信信号;二极管开关电路,连接到输入和输出端子 双工器的GSM通信信号,并且被设置为切换GSM通信信号的发送和接收,以及连接到双工器的GSM / DCS / PCS / WCDMA通信信号的多点GaAsIC开关,并且被布置成切换传输和 接收这些信号。 高频模块通过改变施加到二极管开关电路和GaAsIC开关的控制信号VcG,VC1和Vc2的模式来切换四种类型的通信信号。
    • 50. 发明申请
    • SEMICONDUCTOR DEVICE
    • 半导体器件
    • US20090257212A1
    • 2009-10-15
    • US12376541
    • 2007-07-25
    • Fumitomo TakanoShinya WatanabeTsukasa AibaJoji NakashimaHiroshi Otsuka
    • Fumitomo TakanoShinya WatanabeTsukasa AibaJoji NakashimaHiroshi Otsuka
    • H05K1/14
    • H01L25/071H01L25/18H01L2224/48091H01L2224/48247H01L2224/49113H01L2924/1305H01L2924/13055H01L2924/13091H01L2924/30107H01L2924/3011H01L2924/00014H01L2924/00
    • A semiconductor device includes first and second assembled bodies (12A, 12B). The first assembled body is provided with a first semiconductor chip, a high voltage bus bar (21) connected to one surface of the first semiconductor chip, a first metal wiring board (24-1) connected to the other surface of the first semiconductor chip with a bonding wire, and a third metal wiring board (24-3) connected to the first metal wiring board. The second assembled body is provided with a second semiconductor chip, a low voltage bus bar (23) connected to one surface of the second semiconductor chip with a bonding wire, a second metal wiring board (24-2) connected to the other surface of the second semiconductor chip, and a fourth metal wiring board (24-4) connected by being returned from an end portion of the second metal wiring board and arranged in parallel to the second metal wiring board. The first assembled body and the second assembled body are arranged in a stacked structure wherein the assembled bodies are being separated. Inductance of a main circuit is reduced by the semiconductor module structure.
    • 半导体器件包括第一和第二组装体(12A,12B)。 第一组装体设置有第一半导体芯片,连接到第一半导体芯片的一个表面的高压母线(21),连接到第一半导体芯片的另一个表面的第一金属布线板(24-1) 和与第一金属布线板连接的第三金属布线板(24-3)。 第二组装体设置有第二半导体芯片,利用接合线连接到第二半导体芯片的一个表面的低压母线(23),连接到第二半导体芯片的另一个表面的第二金属布线板(24-2) 第二半导体芯片和第四金属布线板(24-4),通过从第二金属布线板的端部返回并与第二金属布线板平行地布置。 第一组装体和第二组装体被布置成堆叠结构,其中组装体被分离。 通过半导体模块结构减小主电路的电感。