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    • 45. 发明授权
    • Process and apparatus for purifying silicon tetrachloride or germanium tetrachloride containing hydrogen compounds
    • 用于纯化含有氢化合物的四氯化硅或四氯化锗的方法和装置
    • US08002954B2
    • 2011-08-23
    • US11659084
    • 2005-06-10
    • Hanns-Peter PoppRainer NicolaiHartwig RaulederJürgen Lang
    • Hanns-Peter PoppRainer NicolaiHartwig RaulederJürgen Lang
    • B01J19/08
    • C01B33/10778B01J19/088B01J2219/00853B01J2219/0093B01J2219/0809B01J2219/0815B01J2219/083B01J2219/0841B01J2219/0847B01J2219/0849B01J2219/0896C01G17/04
    • The invention relates to a process for the purification's of silicon tetrachloride or germanium tetrachloride contaminated with at least one hydrogen-containing compound, in which the silicon tetrachloride or germanium tetrachloride to be purified is treated in a targeted manner by means of a cold plasma and purified silicon tetrachloride or germanium tetrachloride is isolated from the phase which has been treated in this way. The present invention further relates to an apparatus for carrying out the process of the invention, which comprises a stock and vaporization unit for silicon or germanium tetrachloride (4.1 or 5.1) which is connected via a connecting line with the inlet of the reactor (4.3 or 5.3) with control unit (4.4 or 5.4) for producing the dielectrically hindered discharges whose outlet leads via a pipe either directly or indirectly via at least one further reactor (5.5) to a condensation unit (4.5 or 5.11) with downstream collection vessel (4.6 or 5.12) which is connected via an offtake line (4.6.2 or 5.12.1) to a distillation unit (4.8 or 5.13) and, if appropriate, is equipped with a feed line (4.6.1) to the unit (4.1).
    • 本发明涉及一种用至少一种含氢化合物污染的四氯化硅或四氯化锗的净化方法,其中待冷却的四氯化硅或四氯化锗将以冷等离子体的方式以目标方式进行处理 从已经以这种方式处理的相中分离出四氯化硅或四氯化锗。 本发明还涉及一种用于实施本发明方法的装置,其包括用于硅或四氯化锗(4.1或5.1)的原料和蒸发单元,其通过连接管线与反应器的入口(4.3或 控制单元(4.4或5.4)用于产生介电阻碍排放物,其出口通过管道直接或间接地通过至少一个另外的反应器(5.5)引导到具有下游收集容器(4.6)的冷凝单元(4.5或5.11) 或5.12),其通过出口管线(4.6.2或5.12.1)连接到蒸馏单元(4.8或5.13),并且如果合适的话,配备有到该单元(4.1)的进料管线(4.6.1) 。