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41. 发明授权

US07731402B2 LED headlamp system 有权
标题翻译： LED头灯系统
公开(公告)号：US07731402B2
公开(公告)日：2010-06-08
申请号：US11885626
申请日：2006-03-03
申请人： Thomas Tessnow , Ralph Johnson
发明人： Thomas Tessnow , Ralph Johnson
IPC分类号： B60Q1/04
CPC分类号： F21S41/663 , F21S41/143 , F21S41/155 , F21S41/24 , F21Y2115/10
摘要： A vehicle headlamp includes a first planar array of low and high beam LED light sources; a first primary optical light guide receiving low and high beam light from the LEDs; a first secondary optical light guide receiving and focusing collimated low and high beam light from the first primary light guide as a combination of low and high beam hot spots; a second planar array of LED light sources having a low and high beam LEDs; a second primary optical light guide receiving and collimating low and high beam light from second LED light sources; a second secondary optical light guide receiving said collimated low and high beam light and spreading the light as a combination of low and high beam spread pattern; a housing to mechanically support the LED arrays, the first primary optic, the first secondary optic, the second primary light guide and the second secondary optic.
摘要翻译：车辆前照灯包括低光束和远光LED光源的第一平面阵列; 第一主光学导光板，其接收来自LED的低光束和远光; 第一次级光学导光器将来自第一主光导的准直的低光束和远光束作为低光束和高光束热点的组合接收和聚焦; 具有低光束和高光束LED的第二平面LED阵列阵列; 第二主光学光导，其接收和准直来自第二LED光源的低光束和远光; 接收所述准直的低光束和远光束并且将光作为低光束和高光束扩展图案的组合进行扩展的第二次级光学光导; 用于机械地支撑LED阵列的壳体，第一主光学元件，第一次光学元件，第二主光导和第二次光学元件。

42. 发明申请

US20070070645A1 LED lamp with direct optical coupling in axial arrangement 有权
标题翻译： LED灯具直接光耦合轴向排列
公开(公告)号：US20070070645A1
公开(公告)日：2007-03-29
申请号：US11477731
申请日：2006-06-29
申请人： Charles Coushaine , Ralph Johnson , Thomas Tessnow
发明人： Charles Coushaine , Ralph Johnson , Thomas Tessnow
IPC分类号： F21V7/04 , F21S8/10
CPC分类号： F21V29/74 , B60Q1/2696 , F21K9/00 , F21K9/61 , F21S43/14 , F21S43/237 , F21S43/241 , F21S43/243 , F21S43/245 , F21S43/247 , F21S45/47 , F21S48/215 , F21V29/773 , F21V2200/00 , F21Y2115/10 , G02B6/0001 , G02B6/4201 , G02B6/4249 , G02B6/4251 , G02B6/4256 , G02B6/4269 , G02B6/428 , G02B6/4292 , G02B6/4298 , G09F9/305 , Y10S362/80
摘要： An LED light source (10) comprises a heat sink (12) having a body (14) with a front surface (16) and a rear surface (18), the rear surface (18) being provided with heat dissipaters (20). The front surface (16) includes a pocket (22) for the receipt of components (24), the components including at least one LEDs (25) and electrical circuitry therefor. A housing (26) has a flange (28) and a tubular projection (30) fitted into the pocket (22) in a manner to fix the components (24) in the heat sink (12); and an optical light guide (32) having at least one light pipes (34) is positioned in the tubular projection (30), each of the at least one light pipes (34) having a light input end (34a) fixed in light gathering alignment with the at least one LEDs (25) in a one-to-one relationship.
摘要翻译： LED光源（10）包括具有前表面（16）和后表面（18）的主体（14）的散热器（12），所述后表面（18）设置有散热器（20）。前表面（16）包括用于接收部件（24）的凹部（22），所述部件包括至少一个LED（25）及其电路。壳体（26）具有凸缘（28）和以将组件（24）固定在散热器（12）中的方式装配到口袋中的管状突起）; 并且具有至少一个光管（34）的光导（32）定位在所述管状突起（30）中，所述至少一个光管（34）中的每一个具有固定在光聚集中的光输入端（34a）与一对一关系的至少一个LED（25）对齐。

43. 发明申请

US20070053399A1 VERTICAL CAVITY SURFACE EMITTING LASER INCLUDING TRENCH AND PROTON IMPLANT ISOLATION 有权
标题翻译：垂直孔表面发射激光，包括TRENCH和PROTON植入物分离
公开(公告)号：US20070053399A1
公开(公告)日：2007-03-08
申请号：US11554473
申请日：2006-10-30
申请人： Ralph Johnson , R. Penner , James Biard
发明人： Ralph Johnson , R. Penner , James Biard
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , H01S5/0425 , H01S5/18311 , H01S5/1833 , H01S5/18341 , H01S5/18358 , H01S5/305 , H01S5/3095
摘要： A VCSEL with nearly planar intracavity contact. A bottom DBR mirror is formed on a substrate. A first conduction layer region is formed on the bottom DBR mirror. An active layer, including quantum wells, is on the first conduction layer region. A trench is formed into the active layer region. The trench is formed in a wagon wheel configuration with spokes providing mechanical support for the active layer region. The trench is etched approximately to the first conduction layer region. Proton implants are provided in the wagon wheel and configured to render the spokes of the wagon wheel insulating. A nearly planar electrical contact is formed as an intracavity contact for connecting the bottom of the active region to a power supply. The nearly planar electrical contact is formed in and about the trench.
摘要翻译：具有几乎平面的腔内接触的VCSEL。在基板上形成底部DBR反射镜。在底部DBR镜上形成第一导电层区域。包括量子阱的有源层在第一导电层区域上。沟槽形成有源层区域。沟槽形成为具有为活动层区域提供机械支撑的轮辐车轮构造。沟槽被蚀刻到第一导电层区域附近。质子植入物被提供在货车轮中并且被配置成使得货车车轮的轮辐绝缘。形成近似平面的电接触件作为用于将有源区域的底部连接到电源的腔内接触。几乎平面的电接触形成在沟槽中和周围。

44. 发明申请

US20060268954A1 LIGHT EMITTING SEMICONDUCTOR DEVICE HAVING AN ELECTRICAL CONFINEMENT BARRIER NEAR THE ACTIVE REGION 有权
标题翻译：具有活动区域附近的电气限制障碍物的发光半导体器件
公开(公告)号：US20060268954A1
公开(公告)日：2006-11-30
申请号：US11461353
申请日：2006-07-31
申请人： Ralph Johnson , James Biard , James Guenter
发明人： Ralph Johnson , James Biard , James Guenter
IPC分类号： H01S5/00
CPC分类号： H01S5/18358 , B82Y20/00 , H01L33/105 , H01S5/18311 , H01S5/3054 , H01S5/3211 , H01S5/3432
摘要： Light emitting semiconductor devices such as VCSELs, SELs, and LEDs are manufactured to have a thin electrical confinement barrier in a confining layer near the active region of the device. The thin confinement barrier comprises a III-V semiconductor material having a high aluminum content (e.g. 80%-100% of the type III material). The aluminum content of the adjacent spacer layer is lower than that of the confinement barrier. In one embodiment the spacer layer has an aluminum content of less than 40% and a direct bandgap. The aluminum profile reduces series resistance and improves the efficiency of the semiconductor device.
摘要翻译：制造诸如VCSEL，SEL和LED的发光半导体器件在靠近器件的有源区域的约束层中具有薄的电限制屏障。薄限制屏障包括具有高铝含量（例如III型材料的80％-100％）的III-V半导体材料。相邻间隔层的铝含量低于限制屏障的铝含量。在一个实施方案中，间隔层具有小于40％的铝含量和直接的带隙。铝型材降低了串联电阻并提高了半导体器件的效率。

45. 发明申请

US20060239325A1 Surface gratings on VCSELs for polarization pinning 有权
标题翻译： VCSEL上的表面光栅用于极化锁定
公开(公告)号：US20060239325A1
公开(公告)日：2006-10-26
申请号：US11299638
申请日：2005-12-12
申请人： Ralph Johnson , James Guenter
发明人： Ralph Johnson , James Guenter
IPC分类号： H01S3/08 , H01S5/00
CPC分类号： H01S5/18355 , H01S5/18311 , H01S5/18319 , H01S5/18386
摘要： A polarization pinned vertical cavity surface emitting laser (VCSEL). A VCSEL designed to be polarization pinned includes an upper mirror. An active region is connected on the upper mirror. A lower mirror is connected to the active region. A grating layer is deposited to the upper mirror. The grating layer includes a low index of refraction layer formed by deposition on the upper mirror. The grating layer further includes a high index of refraction layer formed by deposition on the low index of refraction layer. A grating is formed into the grating layer.
摘要翻译：偏振锁定垂直腔表面发射激光器（VCSEL）。被设计为偏振锁定的VCSEL包括上镜。有源区连接在上镜上。下反射镜连接到活动区域。光栅层沉积到上镜。光栅层包括通过沉积在上反射镜上形成的低折射率折射率层。光栅层还包括通过沉积在低折射率折射率层上形成的高折射率折射率层。格栅形成光栅层。

46. 发明申请

US20060087861A1 Light emitting diode module for automotive headlamp 有权
标题翻译：汽车前照灯用发光二极管模块
公开(公告)号：US20060087861A1
公开(公告)日：2006-04-27
申请号：US11121230
申请日：2005-05-03
申请人： Thomas Tessnow , Michael Tucker , Ralph Johnson , Steven Sidwell
发明人： Thomas Tessnow , Michael Tucker , Ralph Johnson , Steven Sidwell
IPC分类号： F21S8/10 , F21V8/00
CPC分类号： G02B6/4298 , F21S41/143 , F21S41/155 , F21S41/24 , F21Y2115/10 , G02B6/0073
摘要： A light gathering module (10) has a body (12) with a first end (14) comprising a single light transmitting surface (16) and a second end (18) having a plurality of arms (20), each arm (20) having an independent light gathering terminus (22) that is rectangular. In a preferred embodiment of the invention, the first end (14) of the body also is rectangular. The light gathering module (10) can be fabricated from acrylic, plastic, glass or other suitable material and preferably has no cladding so that light output I maximized. When combined in a housing (32) with a projector lens (34) the light gathering module (10) provides a vehicle headlamp (30).
摘要翻译：集光模块（10）具有主体（12），其具有包括单个透光表面（16）的第一端（14）和具有多个臂（20）的第二端（18），每个臂（20）具有矩形的独立的光收集终端（22）。在本发明的优选实施例中，本体的第一端（14）也是矩形的。光收集模块（10）可以由丙烯酸，塑料，玻璃或其它合适的材料制成，并且优选地不具有包层，使得光输出I最大化。当在壳体（32）中与投影透镜（34）组合时，聚光模块（10）提供车辆前照灯（30）。

47. 发明申请

US20060045162A1 Distributed bragg reflector for optoelectronic device 有权
标题翻译：光电器件分布式布拉格反射器
公开(公告)号：US20060045162A1
公开(公告)日：2006-03-02
申请号：US11091656
申请日：2005-03-28
申请人： Ralph Johnson
发明人： Ralph Johnson
IPC分类号： H01S3/08
CPC分类号： H01S5/423 , B82Y20/00 , H01L33/105 , H01S5/18311 , H01S5/18338 , H01S5/18361 , H01S5/3054 , H01S5/3077 , H01S5/3211 , H01S5/3432
摘要： A Distributed Bragg Reflector (DBR) that has relatively low light absorption, relatively low electrical resistance, and/or relatively good thermal conductivity. The DBR may include a first mirror layer and a second mirror layer, with an interface therebetween. A step transition is provided in the aluminum concentration and in the doping concentration at or near the interface between the first mirror layer and the second mirror layer. To reduce optical absorption, the interface between the first and second mirror layers may be positioned at or near a null in the optical electric field within the DBR. A graded junction may also be provided. The graded junction may be more lightly doped, have a graded aluminum concentration, and may be placed at or near a peak in the optical electric field.
摘要翻译：具有相对低的光吸收，相对低的电阻和/或相对良好的导热性的分布式布拉格反射器（DBR）。 DBR可以包括第一镜层和第二镜层，其间具有界面。提供铝浓度和在第一镜层和第二镜层之间的界面处或附近的掺杂浓度的阶跃转换。为了减少光吸收，第一和第二镜层之间的界面可以位于DBR内的光电场中或接近零位。还可以提供分级连接点。分级结可以更轻掺杂，具有梯度铝浓度，并且可以放置在光电场中或附近的峰值处。

48. 发明申请

US20050047474A1 Hybrid mirror VCSEL 有权
标题翻译：混合镜VCSEL
公开(公告)号：US20050047474A1
公开(公告)日：2005-03-03
申请号：US10933876
申请日：2004-09-03
申请人： Ralph Johnson , Tzu-Yu Wang
发明人： Ralph Johnson , Tzu-Yu Wang
IPC分类号： H01S3/08 , H01S5/00 , H01S5/042 , H01S5/183 , H01S5/20
CPC分类号： H01S5/18313 , H01S5/0425 , H01S5/18358 , H01S5/18369 , H01S5/18377 , H01S5/2063
摘要： The invention is generally concerned with vertical cavity surface emitting lasers. In one example, the vertical cavity surface emitting laser includes, among other things, an upper mirror structure having a metal contact, a top mirror above the metal contact, and a semiconductive top DBR having an insulation region, wherein the top DBR is no more than 3.5 microns thick and is disposed below the metal contact. Thus, the top DBR is sufficiently thick as to enable adequate current spreading, but thin enough to enable fabrication of an isolation region using relatively low energy ion implantation or relatively shallow etching.
摘要翻译：本发明通常涉及垂直腔表面发射激光器。在一个示例中，垂直腔表面发射激光器包括具有金属接触件的上反射镜结构，金属接触件上方的顶镜和具有绝缘区域的半导体顶部DBR，其中顶部DBR不再超过3.5微米厚，并设置在金属接触件的下方。因此，顶部DBR足够厚以使得能够进行足够的电流扩展，但是足够薄以使得能够使用相对低能量的离子注入或相对浅的蚀刻来制造隔离区域。

49. 发明申请

US20050034661A1 System for developing a nitrogen-containing active region 审中-公开
标题翻译：用于开发含氮活性区的系统
公开(公告)号：US20050034661A1
公开(公告)日：2005-02-17
申请号：US10931162
申请日：2004-08-31
申请人： Ralph Johnson , Virgil Blasingame
发明人： Ralph Johnson , Virgil Blasingame
IPC分类号： H01L21/203 , H01L33/00 , H01S5/183 , H01S5/32 , H01S5/323 , H01S5/34 , H01S5/343 , C23C16/00
CPC分类号： B82Y20/00 , H01L33/007 , H01S5/18308 , H01S5/3201 , H01S5/32358 , H01S5/32366 , H01S5/34 , H01S5/3403 , H01S5/3406 , H01S5/34306 , H01S5/34313 , H01S5/34346 , H01S5/34353 , H01S2302/00
摘要： Systems produce flattening layers associated with nitrogen-containing quantum wells and prevent 3-D growth of nitrogen containing layers using high As fluxes. MEE (Migration Enhanced Epitaxy) is used to flatten layers and enhance smoothness of quantum well interfaces and to achieve narrowing of the spectrum of light emitted from nitrogen containing quantum wells. MEE is performed by alternately depositing single atomic layers of group III and V before, and/or after, and/or in-between quantum wells. Where GaAs is used, the process can be accomplished by alternately opening and closing Ga and As shutters in an MBE system, while preventing both from being open at the same time. Where nitrogen is used, the system incorporates a mechanical means of preventing nitrogen from entering the MBE processing chamber, such as a gate valve. The gate valve allows the nitrogen source to be completely cut-off from the chamber during non-nitrogen processing steps.
摘要翻译：系统产生与含氮量子阱相关的扁平层，并且使用高As助熔剂防止含氮层的3-D生长。 MEE（迁移增强外延）用于平坦化层并增强量子阱界面的平滑度，并实现从含氮量子阱发射的光的光谱变窄。通过在量子阱之间，之前和/或之后交替沉积III族和V族的单一原子层来执行MEE。在使用GaAs的情况下，可以通过在MBE系统中交替地打开和关闭Ga和As快门来实现该过程，同时防止两者同时打开。在使用氮气的情况下，该系统包含防止氮气进入MBE处理室（例如闸阀）的机械装置。闸阀允许氮源在非氮处理步骤期间与室完全切断。

50. 发明授权

US4929224A Plastic bag forming machine 失效
标题翻译：塑料袋成型机
公开(公告)号：US4929224A
公开(公告)日：1990-05-29
申请号：US202695
申请日：1988-06-03
申请人： Violet Hanson , Ralph Johnson
发明人： Violet Hanson , Ralph Johnson
IPC分类号： B31B29/00
CPC分类号： B31B29/00 , B31B2221/20 , B31B2221/407
摘要： A method and apparatus for the automatic manufacture of flat bottom bags from a substantially continuous supply of a sealable material whereby the material is formed as a bag having a reinforced sealed flat bottom formed by an interior bag forming assembly that is cooperable with a relatively movable folder assembly that folds the bottom of the bag and removes it from the bag former assembly after a length of the bag is severed from the remainder of the material.
摘要翻译：一种用于从基本上连续供应可密封材料自动制造平底袋的方法和装置，由此材料形成为具有通过内部袋形成组件形成的加强的密封平底的袋，该内部袋形成组件可与相对可移动的夹该组件折叠袋的底部，并且在袋的长度与剩余的材料分离之后将其从袋形成器组件中移出。

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