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41. 发明授权

US07946503B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07946503B2
公开(公告)日：2011-05-24
申请号：US12510494
申请日：2009-07-28
申请人： Jun Koyama , Keitaro Imai
发明人： Jun Koyama , Keitaro Imai
IPC分类号： G06K19/06
CPC分类号： H01L27/13 , G11C17/16 , H01L27/12 , H01L27/1214 , H01L27/1266
摘要： A semiconductor device which may be used as an ID chip and data may be rewritten only one time. In addition, a semiconductor device may be used as an ID chip and data may be written except when manufacturing the chip. The invention has a modulating circuit, a demodulating circuit, a logic circuit, a memory circuit, and an antenna circuit over an insulating substrate. The modulating circuit and the demodulating circuit are electrically connected to an antenna circuit, the demodulating circuit is connected to the logic circuit, the memory circuit stores an output signal of the logic circuit, and the memory circuit is a fuse memory circuit using a fuse element.
摘要翻译：可以用作ID芯片和数据的半导体器件可以仅重写一次。此外，半导体器件可以用作ID芯片，并且可以写入数据，除非在制造芯片时。本发明在绝缘基板上具有调制电路，解调电路，逻辑电路，存储电路和天线电路。调制电路和解调电路电连接到天线电路，解调电路连接到逻辑电路，存储电路存储逻辑电路的输出信号，存储电路是使用熔丝元件的熔丝存储电路。

42. 发明授权

US07699232B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07699232B2
公开(公告)日：2010-04-20
申请号：US11044828
申请日：2005-01-28
申请人： Jun Koyama , Keitaro Imai
发明人： Jun Koyama , Keitaro Imai
IPC分类号： G06K19/06
CPC分类号： H01L27/13 , G11C17/16 , H01L27/12 , H01L27/1214 , H01L27/1266
摘要： A semiconductor device which may be used as an ID chip and data may be rewritten only one time. In addition, a semiconductor device may be used as an ID chip and data may be written except when manufacturing the chip. The invention has a modulating circuit, a demodulating circuit, a logic circuit, a memory circuit, and an antenna circuit over an insulating substrate. The modulating circuit and the demodulating circuit are electrically connected to an antenna circuit, the demodulating circuit is connected to the logic circuit, the memory circuit stores an output signal of the logic circuit, and the memory circuit is a fuse memory circuit using a fuse element.
摘要翻译：可以用作ID芯片和数据的半导体器件可以仅重写一次。此外，半导体器件可以用作ID芯片，并且可以写入数据，除非在制造芯片时。本发明在绝缘基板上具有调制电路，解调电路，逻辑电路，存储电路和天线电路。调制电路和解调电路电连接到天线电路，解调电路连接到逻辑电路，存储电路存储逻辑电路的输出信号，存储电路是使用熔丝元件的熔丝存储电路。

43. 发明授权

US07572688B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07572688B2
公开(公告)日：2009-08-11
申请号：US11797533
申请日：2007-05-04
申请人： Shunpei Yamazaki , Keitaro Imai , Shinji Maekawa , Makoto Furuno , Osamu Nakamura
发明人： Shunpei Yamazaki , Keitaro Imai , Shinji Maekawa , Makoto Furuno , Osamu Nakamura
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L27/12 , H01L27/1292 , H01L29/42384 , H01L29/66765
摘要： An object of the present invention is to provide a method for manufacturing a semiconductor device of which manufacturing process is simplified by improving usage rate of a material. A method for manufacturing a semiconductor device of the invention comprises the steps of: forming gate electrodes with a droplet discharge method on a substrate having an insulating surface; laminating gate insulating layers, semiconductor layers, and a semiconductor layer containing one-conductivity type impurity over the gate electrodes; forming first conductive layers serving as masks with a droplet discharge method in a position overlapping the gate electrodes, etching the semiconductor layer and the semiconductor layer containing one-conductivity type impurity with the first conductive layers, forming a second conductive layer serving as a source wiring or a drain wiring with a droplet discharge method over the first conductive layers; and etching the first conductive layers and the semiconductor layer containing one-conductivity type impurity, using the second conductive layers as masks.
摘要翻译：本发明的目的是提供一种通过提高材料的使用率来简化制造工艺的半导体器件的制造方法。本发明的半导体器件的制造方法包括以下步骤：在具有绝缘表面的基板上形成具有液滴喷射法的栅电极; 在栅电极上层叠栅绝缘层，半导体层和含有一导电型杂质的半导体层; 在与栅电极重叠的位置处形成用作液滴喷射法的掩模的第一导电层，用第一导电层蚀刻半导体层和含有一导电型杂质的半导体层，形成用作源极布线的第二导电层或在第一导电层上具有液滴喷射方法的漏极布线; 并且使用第二导电层作为掩模来蚀刻第一导电层和含有一种导电型杂质的半导体层。

44. 发明授权

US07374977B2 Droplet discharge device, and method for forming pattern, and method for manufacturing display device 有权
标题翻译：液滴放电装置及其形成方法，以及显示装置的制造方法
公开(公告)号：US07374977B2
公开(公告)日：2008-05-20
申请号：US11010532
申请日：2004-12-13
申请人： Shunpei Yamazaki , Keitaro Imai
发明人： Shunpei Yamazaki , Keitaro Imai
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： G02F1/136286 , G02F2001/136295 , H01L27/124 , H01L27/1292 , H05K3/125 , H05K2203/013 , H05K2203/0139 , H05K2203/0195
摘要： It is an object of the present invention to improve the usability of a material, and to provide a display device which can be manufactured by simplifying the manufacturing process and a manufacturing technique thereof. It is also an object of the invention to provide a technique in which a pattern of a wiring or the like constituting these display devices can be formed to have a desired shape with favorable controllability. One feature of a droplet discharge device of the invention comprises: a discharge means for discharging a composition including a pattern forming material; and a shape means for shaping the shape of the composition before the composition is attached to a formation region, in which the shape means is provided between the discharge means and the formation region.
摘要翻译：本发明的目的是提高材料的可用性，并提供可以通过简化制造工艺制造的显示装置及其制造技术。本发明的另一个目的是提供一种技术，其中构成这些显示装置的布线等的图案可以形成为具有良好可控性的所需形状。本发明的液滴喷射装置的一个特征包括：排出包括图案形成材料的组合物的排出装置; 以及用于在将组合物附接到形成区域之前使组合物的形状成形的形状装置，其中形状装置设置在排出装置和形成区域之间。

45. 发明授权

US07232773B2 Liquid drop jetting apparatus using charged beam and method for manufacturing a pattern using the apparatus 有权
公开(公告)号：US07232773B2
公开(公告)日：2007-06-19
申请号：US10827711
申请日：2004-04-20
申请人： Keitaro Imai , Shunpei Yamazaki
发明人： Keitaro Imai , Shunpei Yamazaki
IPC分类号： H01L21/26
CPC分类号： B05B5/053 , B05B5/025 , B05B12/12 , B05C5/0212 , B05C5/0279
摘要： The invention drastically improves the accuracy of adhesion position of a liquid drop discharged by a liquid drop discharge method and makes it possible to form a fine and highly accurate pattern directly on a substrate. Therefore, one object of the invention is to provide a method for manufacturing a wiring, a conductive layer and a display device that can respond to upsizing of a substrate. Moreover, another object of the invention is to provide a method for manufacturing a wiring, a conductive layer and a display device that can improve throughput and the efficiency of use of material. The invention can improve the accuracy of adhesion position of a liquid drop drastically at the time of patterning a resist material, a wiring material, or the like directly by the liquid drop discharge method mainly on a substrate having an insulating surface. To be more specific, the invention is characterized in that: a liquid adhesion position on the surface of the substrate is scanned with a charged beam in accordance with a desired pattern immediately before a liquid drop is discharged by the liquid drop discharge method; and immediately thereafter, the liquid drop is charged with an electric charge of a polarity opposite to the charged beam and is discharged to improve the controllability of the adhesion position of the liquid drop to a great extent.

46. 发明授权

US07229862B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07229862B2
公开(公告)日：2007-06-12
申请号：US10885636
申请日：2004-07-08
申请人： Shunpei Yamazaki , Keitaro Imai , Shinji Maekawa , Makoto Furuno , Osamu Nakamura
发明人： Shunpei Yamazaki , Keitaro Imai , Shinji Maekawa , Makoto Furuno , Osamu Nakamura
IPC分类号： H01L21/84
CPC分类号： H01L27/12 , H01L27/1292 , H01L29/42384 , H01L29/66765
摘要： An object of the present invention is to provide a method for manufacturing a semiconductor device of which manufacturing process is simplified by improving usage rate of a material. A method for manufacturing a semiconductor device of the invention comprises the steps of: forming gate electrodes with a droplet discharge method on a substrate having an insulating surface; laminating gate insulating layers, semiconductor layers, and a semiconductor layer containing one-conductivity type impurity over the gate electrodes; forming first conductive layers serving as masks with a droplet discharge method in a position overlapping the gate electrodes, etching the semiconductor layer and the semiconductor layer containing one-conductivity type impurity with the first conductive layers, forming a second conductive layer serving as a source wiring or a drain wiring with a droplet discharge method over the first conductive layers; and etching the first conductive layers and the semiconductor layer containing one-conductivity type impurity, using the second conductive layers as masks.
摘要翻译：本发明的目的是提供一种通过提高材料的使用率来简化制造工艺的半导体器件的制造方法。本发明的半导体器件的制造方法包括以下步骤：在具有绝缘表面的基板上形成具有液滴喷射法的栅电极; 在栅电极上层叠栅绝缘层，半导体层和含有一导电型杂质的半导体层; 在与栅电极重叠的位置处形成用作液滴喷射法的掩模的第一导电层，用第一导电层蚀刻半导体层和含有一导电型杂质的半导体层，形成用作源极布线的第二导电层或在第一导电层上具有液滴喷射方法的漏极布线; 并且使用第二导电层作为掩模来蚀刻第一导电层和含有一种导电型杂质的半导体层。

47. 发明授权

US07211454B2 Manufacturing method of a light emitting device including moving the source of the vapor deposition parallel to the substrate 有权
标题翻译：一种发光器件的制造方法，包括使所述气相沉积源平行于所述衬底移动
公开(公告)号：US07211454B2
公开(公告)日：2007-05-01
申请号：US10894434
申请日：2004-07-20
申请人： Shunpei Yamazaki , Keitaro Imai , Shinji Maekawa , Makoto Furuno , Osamu Nakamura , Masakazu Murakami
发明人： Shunpei Yamazaki , Keitaro Imai , Shinji Maekawa , Makoto Furuno , Osamu Nakamura , Masakazu Murakami
IPC分类号： H01L21/00 , H01L21/84 , H01L21/44
CPC分类号： H01L51/56 , H01L27/3244
摘要： The present invention provides an active matrix substrate which can be fabricated at a lower cost and a light emitting device having a large display area fabricated by a vapor deposition system which makes a film with uniform thickness for a large substrate. According to the invention, an organic light-emitting device can be fabricated by performing vapor deposition toward a large substrate provided with a pixel portion (and a driver circuit) including an n-channel TFT having a amorphous silicon film, semi-amorphous semiconductor film or an organic semiconductor film as an active layer.
摘要翻译：本发明提供了一种能够以较低成本制造的有源矩阵基板和具有由气相沉积系统制造的具有大的显示面积的发光器件，该气相沉积系统制造了具有均匀厚度的薄膜用于大基片。根据本发明，可以通过向具有包括具有非晶硅膜，半非晶半导体膜的n沟道TFT的像素部分（和驱动电路）的大型衬底进行气相沉积来制造有机发光器件或有机半导体膜作为活性层。

48. 发明申请

US20070051952A1 Liquid crystal display device and method for manufacturing the same, and liquid crystal television receiver 有权
标题翻译：液晶显示装置及其制造方法以及液晶电视接收机
公开(公告)号：US20070051952A1
公开(公告)日：2007-03-08
申请号：US10574829
申请日：2004-10-25
申请人： Shunpei Yamazaki , Shinji Maekawa , Makoto Furuno , Osamu Nakamura , Keitaro Imai
发明人： Shunpei Yamazaki , Shinji Maekawa , Makoto Furuno , Osamu Nakamura , Keitaro Imai
IPC分类号： H01L29/04
CPC分类号： H01L33/08 , G02F1/1368 , G02F2001/136295 , H01L21/76838 , H01L27/12 , H01L27/1285 , H01L27/1292 , H01L29/66765 , H01L2924/0002 , Y10T428/24421 , H01L2924/00
摘要： At least one or more of a conductive layer which forms a wiring or an electrode and a pattern necessary for manufacturing a display panel such as a mask for forming a predetermined pattern is formed by a method capable of selectively forming a pattern to manufacture a liquid crystal display device. A droplet discharge method capable of forming a predetermined pattern by selectively discharging a droplet of a composition in accordance with a particular object is used as a method capable of selectively forming a pattern in forming a conductive layer, an insulating layer, or the like.
摘要翻译：通过能够选择性地形成图案以制造液晶的方法形成至少一个或多个形成布线或电极的导电层和制造用于形成预定图案的掩模等显示面板所需的图案显示设备。使用能够通过根据特定目的选择性地排出组合物的液滴来形成预定图案的液滴喷射方法作为能够在形成导电层，绝缘层等中选择性地形成图案的方法。

49. 发明授权

US07151288B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US07151288B2
公开(公告)日：2006-12-19
申请号：US10678061
申请日：2003-10-06
申请人： Keitaro Imai , Koji Yamakawa
发明人： Keitaro Imai , Koji Yamakawa
IPC分类号： H01L29/51
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/75
摘要： A semiconductor device comprises a semiconductor substrate, a conductive plug electrically connected to the semiconductor substrate, a silicon carbide film provided on the conductive plug, a metal compound film provided on the silicon carbide film and containing a metal carbide, and an electrode provided on the metal compound film.
摘要翻译：半导体器件包括半导体衬底，与半导体衬底电连接的导电插塞，设置在导电插塞上的碳化硅膜，设置在碳化硅膜上并含有金属碳化物的金属化合物膜，以及设置在该半导体衬底上的电极金属化合物膜。

50. 发明授权

US06924521B2 Semiconductor device comprising a capacitor using a ferroelectric material 失效
标题翻译：包括使用铁电材料的电容器的半导体器件
公开(公告)号：US06924521B2
公开(公告)日：2005-08-02
申请号：US10760499
申请日：2004-01-21
申请人： Osamu Arisumi , Keitaro Imai , Koji Yamakawa , Bum-ki Moon
发明人： Osamu Arisumi , Keitaro Imai , Koji Yamakawa , Bum-ki Moon
IPC分类号： H01L21/02 , H01L31/119 , H01L29/00
CPC分类号： H01L28/56 , H01L28/55
摘要： A semiconductor device comprises a bottom electrode, a top electrode, and a dielectric film provided between the bottom electrode and the top electrode and made of a perovskite type ferroelectrics containing Pb, Zr, Ti and O, the dielectric film comprising a first portion formed of a plurality of crystal grains partitioned by grain boundaries having a plurality of directions.
摘要翻译：半导体器件包括底电极，顶电极和设置在底电极和顶电极之间并由包含Pb，Zr，Ti和O的钙钛矿型铁电体制成的电介质膜，该电介质膜包括由第一部分形成的第一部分由具有多个方向的晶界划分的多个晶粒。

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