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41. 发明授权

US07479456B2 Gasless high voltage high contact force wafer contact-cooling electrostatic chuck 有权
标题翻译：无气高压高接触力晶片接触冷却静电吸盘
公开(公告)号：US07479456B2
公开(公告)日：2009-01-20
申请号：US10929104
申请日：2004-08-26
申请人： Douglas A. Buchberger, Jr. , Daniel J. Hoffman , Kartik Ramaswamy , Andrew Nguyen , Hiorji Hanawa , Kenneth S. Collins , Amir Al-Bayati
发明人： Douglas A. Buchberger, Jr. , Daniel J. Hoffman , Kartik Ramaswamy , Andrew Nguyen , Hiorji Hanawa , Kenneth S. Collins , Amir Al-Bayati
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/67109 , H01L21/6831
摘要： A method of electrostatically chucking a wafer while removing heat from the wafer in a plasma reactor includes providing a polished generally continuous surface on a puck, placing the wafer on the polished surface of the puck and cooling the puck. A chucking voltage is applied to an electrode within the puck to electrostatically pull the wafer onto the surface of the puck with sufficient force to attain a selected heat transfer coefficient between contacting surfaces of the puck and wafer.
摘要翻译：在等离子体反应器中从晶片去除热量的同时静电夹持晶片的方法包括在圆盘上提供抛光的大致连续的表面，将晶片放置在圆盘的抛光表面上并冷却圆盘。将夹持电压施加到圆盘内的电极，以足够的力将晶片静电拉到圆盘的表面上，以获得在圆盘和晶片的接触表面之间选择的传热系数。

42. 发明授权

US07132618B2 MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression 有权
公开(公告)号：US07132618B2
公开(公告)日：2006-11-07
申请号：US10359989
申请日：2003-02-06
申请人： Daniel J. Hoffman , Yan Ye , Dan Katz , Douglas A. Buchberger, Jr. , Xiaoye Zhao , Kang-Lie Chiang , Robert B. Hagen , Matthew L. Miller
发明人： Daniel J. Hoffman , Yan Ye , Dan Katz , Douglas A. Buchberger, Jr. , Xiaoye Zhao , Kang-Lie Chiang , Robert B. Hagen , Matthew L. Miller
IPC分类号： B23K9/00
CPC分类号： H01J37/3244 , H01J37/32082 , H01J37/32183 , H01J37/3266
摘要： A plasma reactor for processing a semiconductor workpiece, includes reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor support, the electrode comprising a portion of the chamber wall, an RF power generator for supplying power at a frequency of the generator to the overhead electrode and capable of maintaining a plasma within the chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that the overhead electrode and the plasma formed in the chamber at the desired plasma ion density resonate together at an electrode-plasma resonant frequency, the frequency of the generator being at least near the electrode-plasma resonant frequency. The reactor further includes a set of MERIE magnets surrounding the plasma process area overlying the wafer surface that produce a slowly circulating magnetic field which stirs the plasma to improve plasma ion density distribution uniformity.

43. 发明申请

US20090140828A1 METHODS AND APPARATUS FOR CONTROLLING CHARACTERISTICS OF A PLASMA 有权
标题翻译：用于控制等离子体特性的方法和装置
公开(公告)号：US20090140828A1
公开(公告)日：2009-06-04
申请号：US11934197
申请日：2007-11-02
申请人： Steven C. Shannon , Daniel J. Hoffman , Matthew L. Miler , Olga Regelman , Kenneth S. Collins , Kartik Ramaswamy , Kallol Bera
发明人： Steven C. Shannon , Daniel J. Hoffman , Matthew L. Miler , Olga Regelman , Kenneth S. Collins , Kartik Ramaswamy , Kallol Bera
IPC分类号： H01P7/04
CPC分类号： H05H1/0081 , H01J37/32091 , H01J37/32174
摘要： Methods and apparatus for controlling characteristics of a plasma, such as the spatial distribution of RF power and plasma uniformity, are provided herein. In some embodiments, an apparatus for controlling characteristics of a plasma includes a resonator for use in conjunction with a plasma reactor, the resonator including a source resonator for receiving an RF signal having a first frequency; a return path resonator disposed substantially coaxially with, and at least partially within, the source resonator; and an outer conductor having the source resonator and the return path resonator disposed substantially coaxially with, and at least partially within, the outer conductor, the outer conductor for providing an RF ground connection.
摘要翻译：本文提供了用于控制等离子体特性的方法和装置，例如RF功率和等离子体均匀性的空间分布。在一些实施例中，用于控制等离子体特性的装置包括与等离子体电抗器结合使用的谐振器，所述谐振器包括用于接收具有第一频率的RF信号的源谐振器; 与所述源谐振器基本同轴并且至少部分地在所述源谐振器内设置的返回路径谐振器; 以及具有源极谐振器和返回路径谐振器的外部导体，该外部导体与外部导体大致同轴并至少部分地设置，外部导体用于提供RF接地连接。

44. 发明申请

US20080314571A1 ANNULAR BAFFLE 有权
标题翻译：环形碎片
公开(公告)号：US20080314571A1
公开(公告)日：2008-12-25
申请号：US12109332
申请日：2008-04-24
申请人： Daniel J. Hoffman , Kallol Bera
发明人： Daniel J. Hoffman , Kallol Bera
IPC分类号： F28F13/12 , F28F9/22
CPC分类号： F15D1/0005 , C23C14/22 , C23C16/44 , C23C16/4412 , C23C16/4585 , C23C16/4586 , H01J37/32009 , H01J37/32623 , H01J37/32633 , H01J2237/334 , H01L21/67069 , H01L21/67109 , H01L21/6831
摘要： A baffle assembly for an etching apparatus is disclosed. The baffle assembly comprises a ring and a lower baffle portion having a curved wall extending between a flange portion and a lower frame portion. A heating assembly may be present within the lower frame portion to control the temperature of the baffle. The baffle assembly may help confine the plasma within the processing space in the chamber. The ring may comprise silicon carbide and the lower baffle portion may comprise aluminum.
摘要翻译：公开了一种用于蚀刻装置的挡板组件。挡板组件包括环和下挡板部分，其具有在凸缘部分和下框架部分之间延伸的弯曲壁。加热组件可能存在于下框架部分内以控制挡板的温度。挡板组件可以帮助将等离子体限制在腔室中的处理空间内。环可以包括碳化硅，并且下挡板部分可以包括铝。

45. 发明申请

US20080105660A1 APPARATUS AND METHOD TO CONFINE PLASMA AND REDUCE FLOW RESISTANCE IN A PLASMA REACTOR 失效
标题翻译：限制等离子体并降低等离子体反应器中的流动阻力的装置和方法
公开(公告)号：US20080105660A1
公开(公告)日：2008-05-08
申请号：US11924086
申请日：2007-10-25
申请人： Kallol Bera , Yan Ye , James D. Carducci , Daniel J. Hoffman , Steven C. Shannon , Douglas A. Buchberger
发明人： Kallol Bera , Yan Ye , James D. Carducci , Daniel J. Hoffman , Steven C. Shannon , Douglas A. Buchberger
IPC分类号： B23K9/00
CPC分类号： H01J37/321 , H01J37/32633 , H01J37/3266
摘要： An apparatus configured to confine a plasma within a processing region in a plasma processing chamber. In one embodiment, the apparatus includes a ring that has a baffle having a plurality of slots and a plurality of fingers. Each slot is configured to have a width less than the thickness of a plasma sheath contained in the processing region.
摘要翻译：一种被配置为将等离子体限制在等离子体处理室中的处理区域内的装置。在一个实施例中，该装置包括具有挡板的环，该挡板具有多个槽和多个指状物。每个槽被构造成具有小于包含在处理区域中的等离子体护套的厚度的宽度。

46. 发明授权

US08647438B2 Annular baffle 有权
标题翻译：环形挡板
公开(公告)号：US08647438B2
公开(公告)日：2014-02-11
申请号：US12109332
申请日：2008-04-24
申请人： Daniel J. Hoffman , Kallol Bera
发明人： Daniel J. Hoffman , Kallol Bera
IPC分类号： C23C16/00 , C23F1/00
CPC分类号： F15D1/0005 , C23C14/22 , C23C16/44 , C23C16/4412 , C23C16/4585 , C23C16/4586 , H01J37/32009 , H01J37/32623 , H01J37/32633 , H01J2237/334 , H01L21/67069 , H01L21/67109 , H01L21/6831
摘要： A baffle assembly for an etching apparatus is disclosed. The baffle assembly comprises a ring and a lower baffle portion having a curved wall extending between a flange portion and a lower frame portion. A heating assembly may be present within the lower frame portion to control the temperature of the baffle. The baffle assembly may help confine the plasma within the processing space in the chamber. The ring may comprise silicon carbide and the lower baffle portion may comprise aluminum.
摘要翻译：公开了一种用于蚀刻装置的挡板组件。挡板组件包括环和下挡板部分，其具有在凸缘部分和下框架部分之间延伸的弯曲壁。加热组件可能存在于下框架部分内以控制挡板的温度。挡板组件可以帮助将等离子体限制在腔室中的处理空间内。环可以包括碳化硅，并且下挡板部分可以包括铝。

47. 发明授权

US07777599B2 Methods and apparatus for controlling characteristics of a plasma 有权
标题翻译：用于控制等离子体特性的方法和装置
公开(公告)号：US07777599B2
公开(公告)日：2010-08-17
申请号：US11934197
申请日：2007-11-02
申请人： Steven C. Shannon , Daniel J. Hoffman , Matthew L. Miller , Olga Regelman , Kenneth S. Collins , Kartik Ramaswamy , Kallol Bera
发明人： Steven C. Shannon , Daniel J. Hoffman , Matthew L. Miller , Olga Regelman , Kenneth S. Collins , Kartik Ramaswamy , Kallol Bera
IPC分类号： H01P7/06 , H05B31/26
CPC分类号： H05H1/0081 , H01J37/32091 , H01J37/32174
摘要： Methods and apparatus for controlling characteristics of a plasma, such as the spatial distribution of RF power and plasma uniformity, are provided herein. In some embodiments, an apparatus for controlling characteristics of a plasma includes a resonator for use in conjunction with a plasma reactor, the resonator including a source resonator for receiving an RF signal having a first frequency; a return path resonator disposed substantially coaxially with, and at least partially within, the source resonator; and an outer conductor having the source resonator and the return path resonator disposed substantially coaxially with, and at least partially within, the outer conductor, the outer conductor for providing an RF ground connection.
摘要翻译：本文提供了用于控制等离子体特性的方法和装置，例如RF功率和等离子体均匀性的空间分布。在一些实施例中，用于控制等离子体特性的装置包括与等离子体电抗器结合使用的谐振器，所述谐振器包括用于接收具有第一频率的RF信号的源谐振器; 与所述源谐振器基本同轴并且至少部分地在所述源谐振器内设置的返回路径谐振器; 以及具有源极谐振器和返回路径谐振器的外部导体，该外部导体与外部导体大致同轴并至少部分地设置，外部导体用于提供RF接地连接。

48. 发明授权

US08048806B2 Methods to avoid unstable plasma states during a process transition 失效
标题翻译：在过程转换过程中避免不稳定的等离子体状态的方法
公开(公告)号：US08048806B2
公开(公告)日：2011-11-01
申请号：US11372752
申请日：2006-03-10
申请人： Michael C. Kutney , Daniel J. Hoffman , Gerardo A. Delgadino , Ezra R. Gold , Ashok Sinha , Xiaoye Zhao , Douglas H. Burns , Shawming Ma
发明人： Michael C. Kutney , Daniel J. Hoffman , Gerardo A. Delgadino , Ezra R. Gold , Ashok Sinha , Xiaoye Zhao , Douglas H. Burns , Shawming Ma
IPC分类号： H01L21/00 , H01L21/302 , G01L21/30
CPC分类号： H01L21/67069 , H01L21/31116 , H01L21/76807
摘要： In some implementations, a method is provided in a plasma processing chamber for stabilizing etch-rate distributions during a process transition from one process step to another process step. The method includes performing a pre-transition compensation of at least one other process parameter so as to avoid unstable plasma states by inhibiting formation of a parasitic plasma during the process transition. In some implementations, a method is provided for processing a workpiece in plasma processing chamber, which includes inhibiting deviations from an expected etch-rate distribution by avoiding unstable plasma states during a process transition from one process step to another process step.
摘要翻译：在一些实施方案中，在等离子体处理室中提供了一种方法，用于在从一个处理步骤到另一个处理步骤的过程转变期间稳定蚀刻速率分布。该方法包括执行至少一个其它过程参数的预过渡补偿，以便通过在过程转换期间抑制寄生等离子体的形成来避免不稳定的等离子体状态。在一些实施方案中，提供了一种用于处理等离子体处理室中的工件的方法，其包括通过在从一个工艺步骤转换到另一工艺步骤的过程转变期间避免不稳定的等离子体状态来抑制预期蚀刻速率分布的偏差。

49. 发明授权

US07375947B2 Method of feedback control of ESC voltage using wafer voltage measurement at the bias supply output 有权
标题翻译：使用偏置电源输出的晶圆电压测量对ESC电压进行反馈控制的方法
公开(公告)号：US07375947B2
公开(公告)日：2008-05-20
申请号：US11672362
申请日：2007-02-07
申请人： Jang Gyoo Yang , Daniel J. Hoffman , Steven C. Shannon , Douglas H. Burns , Wonseok Lee , Kwang-Soo Kim
发明人： Jang Gyoo Yang , Daniel J. Hoffman , Steven C. Shannon , Douglas H. Burns , Wonseok Lee , Kwang-Soo Kim
IPC分类号： H01L21/283 , B23B31/28
CPC分类号： H01J37/32706 , H01J37/32935 , H01L21/6833 , Y10T279/23
摘要： In a plasma reactor having an electrostatic chuck, wafer voltage is determined from RF measurements at the bias input using previously determined constants based upon transmission line properties of the bias input, and this wafer voltage is used to accurately control the DC wafer clamping voltage.
摘要翻译：在具有静电卡盘的等离子体反应器中，使用基于偏置输入的传输线特性的先前确定的常数，在偏置输入处的RF测量确定晶片电压，并且该晶片电压用于精确地控制DC晶片钳位电压。

50. 发明授权

US07359177B2 Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output 有权
标题翻译：具有E.S.C.反馈控制的双偏压等离子体反应器电压使用晶圆电压测量在偏置电源输出
公开(公告)号：US07359177B2
公开(公告)日：2008-04-15
申请号：US11127036
申请日：2005-05-10
申请人： Jang Gyoo Yang , Daniel J. Hoffman , Steven C. Shannon , Douglas H. Burns , Wonseok Lee , Kwang-Soo Kim
发明人： Jang Gyoo Yang , Daniel J. Hoffman , Steven C. Shannon , Douglas H. Burns , Wonseok Lee , Kwang-Soo Kim
IPC分类号： H01L21/683 , H01T23/00 , G01L21/30 , G01R31/00 , H01J7/24 , H05B31/26 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32706 , H01J37/32935 , H01L21/6833 , Y10T279/23
摘要： A plasma reactor has a dual frequency plasma RF bias power supply furnishing RF bias power comprising first and second frequency components, f(1), f(2), respectively, and an RF power path having an input end coupled to the plasma RF bias power supply and an output end coupled to the wafer support pedestal, and sensor circuits providing measurement signals representing first and second frequency components of a measured voltage and first and second frequency components of a measured current near the input end of the RF power path. The reactor further includes a processor for providing first and second frequency components of a wafer voltage signal as, respectively, a first sum of the first frequency components of the measured voltage and measured current multiplied by first and second coefficients respectively, and a second sum of the second frequency components of the measured voltage and measured current multiplied by third and fourth coefficients, respectively. A processor produces a D.C. wafer voltage by combining D.C. components of the first and second frequency components of the wafer voltage with an intermodulation correction factor that is the product of the D.C. components of the first and second components of the wafer voltage raised to a selected power and multiplied by a selected coefficient.
摘要翻译：等离子体反应器具有双频等离子体RF偏压电源，其分别提供包括第一和第二频率分量f（1），f（2）的RF偏置功率，以及具有耦合到等离子体RF偏置的输入端的RF功率路径电源和耦合到晶片支撑基座的输出端，以及传感器电路，其提供表示测量电压的第一和第二频率分量以及在RF功率路径的输入端附近的测量电流的第一和第二频率分量的测量信号。反应器还包括处理器，用于分别提供晶片电压信号的第一和第二频率分量，分别为测量电压的第一频率分量和测量电流乘以第一和第二系数的第一和，以及第二和测量电压和测量电流的第二频率分量分别乘以第三和第四系数。处理器通过将晶片电压的第一和第二频率分量的DC分量与作为晶片电压的第一和第二分量的DC分量升高到所选功率的互调校正因子相结合来产生DC晶片电压并乘以所选系数。

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