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    • 44. 发明授权
    • Memory repair system and method
    • 内存修复系统和方法
    • US07948818B1
    • 2011-05-24
    • US12827446
    • 2010-06-30
    • Albert WuSehat Sutardja
    • Albert WuSehat Sutardja
    • G11C7/00
    • G06F11/0793G06F11/073G11C29/789
    • An integrated circuit (IC) comprises a memory module that stores at least one of data and code. A memory repair database stores data relating to defective memory addresses. A memory control module detects defective memory locations in the memory module, locates redundant memory elements in the memory module, and stores information that associates memory addresses of the defective memory locations with the redundant memory elements in the memory repair database. Storing said information includes electrically altering at least one of a plurality of electrical fuses. A redundant memory decoder module receives the information and physically remaps the memory addresses to the redundant memory locations.
    • 集成电路(IC)包括存储数据和代码中的至少一个的存储器模块。 存储器修复数据库存储与缺陷存储器地址有关的数据。 存储器控制模块检测存储器模块中的缺陷存储器位置,将冗余存储器元件定位在存储器模块中,并且存储将缺陷存储器位置的存储器地址与冗余存储器元件关联在存储器修复数据库中的信息。 存储所述信息包括电改变多个电保险丝中的至少一个。 冗余存储器解码器模块接收信息并将存储器地址物理地映射到冗余存储器位置。
    • 48. 发明授权
    • Fuse structures, methods of making and using the same, and integrated circuits including the same
    • 保险丝结构,制造和使用它们的方法以及包括其的集成电路
    • US07704805B1
    • 2010-04-27
    • US12012723
    • 2008-02-04
    • Chuan-Cheng ChengShuhua YuRoawen ChenAlbert Wu
    • Chuan-Cheng ChengShuhua YuRoawen ChenAlbert Wu
    • H01L21/82H01L21/8238H01L21/336
    • H01L23/5258H01L2924/0002H01L2924/00
    • A fuse structure, an integrated circuit including the structure, and methods for making the structure and (re)configuring a circuit using the fuse. The fuse structure generally includes (a) a conductive structure with at least two circuit elements electrically coupled thereto, (b) a dielectric layer over the conductive structure, and (c) a first lens over both the first dielectric layer and the conductive structure configured to at least partially focus light onto the conductive structure. The method of making the structure generally includes the steps of (1) forming a conductive structure electrically coupled to first and second circuit elements, (2) forming a dielectric layer thereover, and (3) forming a lens on or over the dielectric layer and over the conductive structure, the lens being configured to at least partially focus light onto the conductive structure. The method of (re)configuring a circuit generally includes the steps of (i) irradiating at least one lens on or near a surface of the circuit sufficient to electrically disconnect a corresponding first fuse positioned under the lens and disable a first configuration of the circuit, and (ii) irradiating at least one other lens on or near the surface of the circuit sufficient to electrically disconnect a corresponding second fuse positioned under that lens and enable a second configuration of the circuit. The structure and methods advantageously provide fuse structures having improved reliability and smaller chip area, thereby increasing the yield of the manufacturing process and the numbers of die per wafer (both gross and good).
    • 保险丝结构,包括该结构的集成电路,以及使用该保险丝的结构和(重新)配置电路的方法。 熔丝结构通常包括(a)具有至少两个电耦合到其上的电路元件的导电结构,(b)导电结构上的电介质层,和(c)第一介电层和导电结构上的第一透镜, 以至少部分地将光聚焦到导电结构上。 制造该结构的方法通常包括以下步骤:(1)形成电耦合到第一和第二电路元件的导电结构,(2)在其上形成介电层,和(3)在电介质层上或之上形成透镜, 在导电结构之上,透镜被配置为至少部分地将光聚焦到导电结构上。 (重新)配置电路的方法通常包括以下步骤:(i)在电路表面上或附近照射足够的电气断开位于透镜下方的对应的第一保险丝的至少一个透镜,并且禁用电路的第一配置 ,以及(ii)在该电路表面上或其附近照射至少一个其他透镜,足以使位于该透镜下方的对应的第二保险丝电气断开并使电路能够进行第二配置。 该结构和方法有利地提供具有改善的可靠性和更小的芯片面积的熔丝结构,从而提高制造工艺的产量和每个晶片的模具数量(总和良好)。