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    • 41. 发明申请
    • NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE
    • 非挥发性半导体存储器件
    • US20090027973A1
    • 2009-01-29
    • US12032110
    • 2008-02-15
    • Atsushi NakayamaToshimasa NamekawaHiroaki NakanoHiroshi ItoOsamu Wada
    • Atsushi NakayamaToshimasa NamekawaHiroaki NakanoHiroshi ItoOsamu Wada
    • G11C7/00G11C17/16G11C8/00
    • G11C17/18
    • A non-volatile semiconductor storage device includes: one or more memory cells including anti-fuse elements capable of writing data by breaking down a gate insulation film of a MOS transistor with a high voltage; a sense node having its one end connected to each of the anti-fuse elements; a sense amplifier comparing the potential of the sense node with the reference potential and amplifying the difference therebetween, the sense amplifier being activated according to a sense-amplifier activation signal; an initialization circuit initializing the potential of the sense node according to an initialization signal; a control circuit outputting the initialization signal at a predetermined timing after input of an external signal input from the outside and outputting a first activation signal to activate the sense amplifier at a predetermined timing after input of the external signal; and a switching circuit outputting the first activation signal as the sense-amplifier activation signal when a normal data read operation is performed, and outputting an inverted version of the external signal as the sense-amplifier activation signal when a test execution is instructed for the one or more memory cells before the gate insulation film is broken down.
    • 非挥发性半导体存储装置包括:一个或多个存储单元,包括能够通过以高电压分解MOS晶体管的栅极绝缘膜来写入数据的抗熔丝元件; 感测节点,其一端连接到每个反熔丝元件; 感测放大器将感测节点的电位与参考电位进行比较,并放大其间的差值,根据读出放大器激活信号来激活读出放大器; 初始化电路根据初始化信号初始化感测节点的电位; 控制电路在输入从外部输入的外部信号的输入之后的预定定时输出初始化信号,并输出第一激活信号,以在输入外部信号之后的预定定时激活读出放大器; 以及当执行正常数据读取操作时,输出作为读出放大器激活信号的第一激活信号的切换电路,并且当指示测试执行时,输出外部信号的反转版本作为读出放大器激活信号 或更多的存储单元在栅极绝缘膜破裂之前。
    • 45. 发明申请
    • Image display device
    • 图像显示装置
    • US20080180019A1
    • 2008-07-31
    • US11900069
    • 2007-09-10
    • Shigemi HirasawaHiroshi Ito
    • Shigemi HirasawaHiroshi Ito
    • H01J63/06
    • H01J31/127H01J29/864H01J2329/8625H01J2329/863
    • In the case of a flat panel display having an vacuum envelope in which electron sources are formed in a matrix, it is difficult to control the distance between the front substrate and the rear substrate in and around the effective screen area. Spacers are arranged both in and around the effective display area 6. Inner spacers 12 are arranged in the effective display area 6 while outer spacers 13 are arranged around the effective display area 6. The distance between the front substrate 2 and the front substrate 1 in the peripheral area is controlled by the outer spacers 13. This can solve various problems including the electrification of spacers 12 which may occur if the distance between the front substrate 2 and the front substrate 1 is not uniform.
    • 在具有真空外壳的平板显示器的情况下,电子源以矩阵形式形成,难以在有效屏幕区域内和周围控制前基板与后基板之间的距离。 隔板布置在有效显示区域6内和周围。 内部间隔件12布置在有效显示区域6中,而外部间隔件13围绕有效显示区域6布置。 外部区域中的前基板2和前基板1之间的距离由外间隔件13控制。 这可以解决如果前基板2和前基板1之间的距离不均匀可能发生的间隔件12的带电的各种问题。
    • 49. 发明授权
    • Topcoat compositions and methods of use thereof
    • 面漆组合物及其使用方法
    • US07358035B2
    • 2008-04-15
    • US11159946
    • 2005-06-23
    • Hiroshi ItoLinda Karin Sundberg
    • Hiroshi ItoLinda Karin Sundberg
    • G03F7/095G03F7/20G03F7/30G03F7/11
    • G03F7/11G03F7/0046G03F7/2041
    • A topcoat composition that includes a fluorine-containing polymer and a casting solvent selected from the group consisting of α,α,α-trifluorotoluene, 2,2,3,3,4,4,5,5-octafluoropentyl-1,1,2,2-tetrafluoroethyl ether (OFP-TFEE), and a mixture consisting of a hydrophobic alkane and an alcohol is provided. Also provided is method of forming an image on a photoresist that includes forming a photoresist over a substrate; applying a topcoat composition, the topcoat composition comprising at least one fluorine-containing polymer and a casting solvent, onto the photoresist; removing the casting solvent of the topcoat composition resulting in the formation of a topcoat material over the photoresist; exposing the photoresist to radiation, the radiation changing a chemical composition of the regions of the photoresist exposed to the radiation, forming exposed and unexposed regions in the photoresist; and removing i) the topcoat material and ii) the exposed regions of the photoresist or the unexposed regions of the photoresist.
    • 一种面漆组合物,其包含含氟聚合物和选自α,α,α-三氟甲苯,2,2,3,3,4,4,5,5-八氟戊基-1,1, 提供了2,2-四氟乙基醚(OFP-TFEE)和由疏水性烷烃和醇组成的混合物。 还提供了在光致抗蚀剂上形成图像的方法,其包括在衬底上形成光致抗蚀剂; 将面漆组合物,包含至少一种含氟聚合物和浇铸溶剂的面漆组合物涂覆到光致抗蚀剂上; 除去顶涂层组合物的浇铸溶剂,导致在光致抗蚀剂上形成顶涂层材料; 将光致抗蚀剂暴露于辐射,辐射改变暴露于辐射的光刻胶的区域的化学组成,在光致抗蚀剂中形成暴露和未曝光的区域; 并去除i)面漆材料和ii)光致抗蚀剂的曝光区域或光致抗蚀剂的未曝光区域。
    • 50. 发明授权
    • Copolymer for use in chemical amplification resists
    • 用于化学放大的共聚物可抵抗
    • US07358027B2
    • 2008-04-15
    • US10091373
    • 2002-03-04
    • Hiroshi Ito
    • Hiroshi Ito
    • G03F7/00G03F7/004
    • G03F7/0382G03F7/0046G03F7/0392G03F7/0395Y10S430/108
    • A copolymer is provided for use in a lithographic photoresist composition, particularly a chemical amplification photoresist. In a preferred embodiment, the copolymer is substantially transparent to deep ultraviolet radiation, i.e., radiation of a wavelength less than 250 nm, including 157 nm, 193 nm and 248 nm radiation, and has improved sensitivity and resolution. In one embodiment, the copolymer is comprised of an α-cyano- or an α-trifluoro-methacrylate monomer unit and a vinyl ether monomer unit. A lithographic photoresist composition containing the fluorinated copolymer is also provided, as is a process for using the composition to generate resist images on a substrate, i.e., in the manufacture of integrated circuits or the like.
    • 提供了一种用于平版印刷光致抗蚀剂组合物,特别是化学扩增光致抗蚀剂的共聚物。 在优选的实施方案中,共聚物对深紫外辐射,即波长小于250nm(包括157nm,193nm和248nm辐射)的辐射基本上是透明的,并且具有改善的灵敏度和分辨率。 在一个实施方案中,共聚物由α-氰基或α-三氟甲基丙烯酸酯单体单元和乙烯基醚单体组成。 还提供了含有氟化共聚物的平版印刷光致抗蚀剂组合物,以及使用该组合物在基材上产生抗蚀剂图像,即集成电路等的制造方法。