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    • 41. 发明公开
    • HOCHLEISTUNGSZERSTÄUBUNGSQUELLE
    • EP2700082A1
    • 2014-02-26
    • EP12714576.1
    • 2012-03-30
    • Oerlikon Trading AG, Trübbach
    • KRASSNITZER, SiegfriedRUHM, Kurt
    • H01J37/34C23C14/34
    • C23C14/35C23C14/352H01J37/3405H01J37/3444H01J37/3464H01J37/3467H01J37/3497
    • The invention relates to a magnetron sputtering process that allows material to be sputtered from a target surface in such a way that a high percentage of the sputtered material is provided in the form of ions. According to the invention, said aim is achieved using a simple generator, the power of which is fed to multiple magnetron sputtering sources spread out over several time intervals, i.e. the maximum power is supplied to one sputtering source during one time interval, and the maximum power is supplied to the following sputtering source in the subsequent time interval, such that discharge current densities of more than 0.2A/cm
      2 are obtained. The sputtering target can cool down during the off time, thus preventing the temperature limit from being exceeded.
    • 本发明涉及一种磁控溅射工艺,该工艺允许从靶表面溅射材料,使得高比例的溅射材料以离子形式提供。 根据本发明,所述目标是通过使用简单的发生器实现的,其发射功率被馈送到分布在多个时间间隔上的多个磁控溅射源,即,在一个时间间隔期间将最大功率提供给一个溅射源,并且最大值 在随后的时间间隔内将功率提供给下一个溅射源,使得获得大于0.2A / cm 2的放电电流密度。 在关闭时间期间,溅射靶可以冷却,从而防止超过温度限制。