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41. 发明申请

US20080124927A1 Semiconductor device including a discontinuous film and method for manufacturing the same 审中-公开
标题翻译：包括不连续膜的半导体器件及其制造方法
公开(公告)号：US20080124927A1
公开(公告)日：2008-05-29
申请号：US11980496
申请日：2007-10-31
申请人： Gaku Minamihaba , Hiroyuki Yano , Nobuyuki Kurashima , Susumu Yamamoto
发明人： Gaku Minamihaba , Hiroyuki Yano , Nobuyuki Kurashima , Susumu Yamamoto
IPC分类号： H01L21/44
CPC分类号： H01L21/76834 , H01L21/76823 , H01L21/76825 , H01L21/76849 , H01L21/76868 , H01L21/76877 , H01L21/76886 , H01L23/5258 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, a first insulating film formed above the semiconductor substrate, Cu wiring buried in the first insulating film, a second insulating film formed above the Cu wiring, and a discontinuous film made of at least one metal selected from the group consisting of Ti, Al, W, Pd, Sn, Ni, Mg and Zn, or a metal oxide thereof and interposed at an interface between the Cu wiring and the second insulating film.
摘要翻译：公开了一种半导体器件，包括半导体衬底，形成在半导体衬底上的第一绝缘膜，埋在第一绝缘膜中的Cu布线，在Cu布线上方形成的第二绝缘膜，以及由至少一种选择的金属制成的不连续膜来自由Ti，Al，W，Pd，Sn，Ni，Mg和Zn组成的组或其金属氧化物，并且介于Cu配线和第二绝缘膜之间的界面处。

42. 发明申请

US20070128873A1 AQUEOUS DISPERSION FOR CMP, POLISHING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
标题翻译：用于CMP，抛光方法和制造半导体器件的方法的水性分散体
公开(公告)号：US20070128873A1
公开(公告)日：2007-06-07
申请号：US11561071
申请日：2006-11-17
申请人： Gaku MINAMIHABA , Nobuyuki Kurashima , Dai Fukushima , Yukiteru Matsui , Susumu Yamamoto , Hiroyuki Yano
发明人： Gaku MINAMIHABA , Nobuyuki Kurashima , Dai Fukushima , Yukiteru Matsui , Susumu Yamamoto , Hiroyuki Yano
IPC分类号： C09K13/00 , H01L21/461 , C03C15/00 , H01L21/302 , B44C1/22
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/31058 , H01L21/31144 , H01L21/7684
摘要： An aqueous dispersion for chemical mechanical polishing is provided, which includes water and a resin particle. The resin particles accompany with a projection having a curvature radius ranging from 10 nm to 1.65 μm on a surface. The maximum length of the resin particles is not more than 5 μm and is 2.5 to 25 times as large as the curvature radius.
摘要翻译：提供了用于化学机械抛光的水分散体，其包括水和树脂颗粒。树脂颗粒伴随着表面上具有10nm至1.65μm的曲率半径的突起。树脂粒子的最大长度为5μm以下，为曲率半径的2.5〜25倍。

43. 发明申请

US20060293191A1 Semiconductor device fabrication method 失效
标题翻译：半导体器件制造方法
公开(公告)号：US20060293191A1
公开(公告)日：2006-12-28
申请号：US11472462
申请日：2006-06-22
申请人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano
发明人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano
IPC分类号： H01L39/24
CPC分类号： H01L21/76829 , C09G1/02 , H01L21/31053 , H01L21/3212 , H01L21/76802 , H01L21/7684
摘要： A semiconductor device fabricating method includes forming a thin film at a top surface of a substrate; polishing a back surface of said substrate; and after the polishing of the back surface, polishing said thin film as formed at the top surface of said substrate.
摘要翻译：一种半导体器件制造方法，包括在衬底的顶表面上形成薄膜; 抛光所述衬底的背面; 并且在后表面的抛光之后，在所述基板的顶表面处形成所述薄膜。

44. 发明授权

US07138073B2 Slurry for chemical mechanical polishing for copper and method of manufacturing semiconductor device using the slurry 有权
标题翻译：用于铜的化学机械抛光的浆料和使用该浆料的制造半导体器件的方法
公开(公告)号：US07138073B2
公开(公告)日：2006-11-21
申请号：US10762514
申请日：2004-01-23
申请人： Gaku Minamihaba , Hiroyuki Yano
发明人： Gaku Minamihaba , Hiroyuki Yano
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , C09G1/02 , C23F3/00
摘要： A method of manufacturing a semiconductor device using a polishing slurry for CMP of Cu, which includes a first complexing agent containing a heterocyclic compound which is capable of forming a water-insoluble complex with Cu, and a second complexing agent containing a heterocyclic compound which is capable of forming a slightly water-soluble or water-soluble complex with Cu to thereby provide at least one extra ligand subsequent to formation of the complex.
摘要翻译：使用Cu的CMP研磨用浆料的半导体装置的制造方法，其包括含有能够与Cu形成水不溶性络合物的杂环化合物的第一配位剂和含有杂环化合物的第二络合剂，所述杂环化合物为能够与Cu形成轻微的水溶性或水溶性络合物，从而在形成络合物后提供至少一种额外的配体。

45. 发明申请

US20060205323A1 Substrate holding mechanism, substrate polishing apparatus and substrate polishing method 有权
标题翻译：基板保持机构，基板研磨装置和基板研磨方法
公开(公告)号：US20060205323A1
公开(公告)日：2006-09-14
申请号：US10539245
申请日：2003-12-26
申请人： Tetsuji Togawa , Toshio Watanabe , Hiroyuki Yano , Gen Toyota , Kenji Iwade , Yoshikuni Tateyama
发明人： Tetsuji Togawa , Toshio Watanabe , Hiroyuki Yano , Gen Toyota , Kenji Iwade , Yoshikuni Tateyama
IPC分类号： B24B51/00 , B24B29/00 , B24B47/02
CPC分类号： B24B37/015 , B24B41/061 , B24B55/02
摘要： A substrate holding mechanism, a substrate polishing apparatus and a substrate polishing method have functions capable of minimizing the amount of heat generated during polishing of a substrate to be polished and of effectively cooling the substrate holding part of the substrate holding mechanism and also capable of effectively preventing the polishing solution and polishing dust from adhering to the outer peripheral portion of the substrate holding part and drying out thereon. The substrate holding mechanism (top ring 1) has a mounting flange 2, a support member 6, and a retainer ring 3. A substrate W to be polished is held on the lower side of the support member 6 surrounded by the retainer ring 3, and the substrate W is pressed against a polishing surface. The mounting flange 2 is provided with a flow passage 26 contiguous with at least the retainer ring 3. A temperature-controlled gas supplied through the flow passage 26 to cool the mounting flange 2, the support member 6 and the retainer ring 3. The retainer ring 3 is provided with a plurality of through-holes 3a communicating with the flow passage 26 to spray the gas flowing through the flow passage 26 onto the polishing surface of a polishing table.
摘要翻译：基板保持机构，基板研磨装置和基板研磨方法具有能够使待研磨基板的抛光时产生的热量最小化的功能，并有效地冷却基板保持机构的基板保持部，并且还能够有效地防止研磨液和研磨粉尘附着在基板保持部的外周部并在其上干燥。基板保持机构（顶环1）具有安装凸缘2，支撑构件6和保持环3.待被抛光的基板W被保持在由保持环3包围的支撑构件6的下侧，将基板W压在研磨面上。安装凸缘2设置有与至少保持环3相邻的流动通道26。通过流路26提供的温度控制气体，以冷却安装凸缘2，支撑构件6和保持环3。保持环3设置有与流路26连通的多个通孔3a，以将流过流路26的气体喷射到研磨台的研磨面上。

46. 发明授权

US07060621B2 Slurry for CMP, polishing method and method of manufacturing semiconductor device 有权
标题翻译：用于CMP的浆料，抛光方法和制造半导体器件的方法
公开(公告)号：US07060621B2
公开(公告)日：2006-06-13
申请号：US10838261
申请日：2004-05-05
申请人： Gaku Minamihaba , Yukiteru Matsui , Hiroyuki Yano
发明人： Gaku Minamihaba , Yukiteru Matsui , Hiroyuki Yano
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , C09G1/02
摘要： Disclosed is a CMP slurry comprising a first colloidal particle having a primary particle diameter ranging from 5 nm to 30 nm and an average particle diameter of d1, the first colloidal particle being incorporated in an amount of w1 by weight and a second colloidal particle having a primary particle diameter larger than that of the first colloidal particle and an average particle diameter of d2, the second colloidal particle being formed of the same material as that of the first colloidal particle and incorporated in an amount of w2 by weight, wherein d1, d2, w1 and w2 are selected to concurrently meet following conditions (A) and (B) excluding situations where d1, d2, w1 and w2 concurrently meet following conditions (C) and (D): 3≦d2/d1≦8 (A) 0.7≦w1/(w1+w2)≦0.97 (B) 3≦d2/d1≦5 (C) 0.7≦w1/(w1+w2)≦0.9. (D)
摘要翻译：公开了一种CMP浆料，其包含一次粒径为5nm〜30nm，平均粒径为d 1的第一胶体粒子，第一胶体粒子的重量为w 1，第二胶体粒子其第一粒径大于第一胶体粒子的一次粒径，平均粒径为d 2，第二胶体粒子由与第一胶体粒子相同的材料形成，w 2的重量比，其中d 1，d 2，w 1和w 2同时满足以下条件（A）和（B），不包括d 1，d 2，w 1和w 2同时满足以下条件（C）和（D ）：<？in-line-formula description =“In-line Formulas”end =“lead”？> 3 <= d2 / d1 <= 8（A）<？in-line-formula description =“ “end =”tail“？> <？in-line-formula description =”In-line Formulas“end =”lead“？> 0.7 <= w1 /（w1 + w2）<= 0.97（B） line-formu lae description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> 3 <= d2 / d1 <= 5（C） <？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line formula”end =“lead”？> 0.7 <= w1 /（ w1 + w2）<= 0.9。（D）<？in-line-formula description =“In-line Formulas”end =“tail”？>

47. 发明授权

US07042099B2 Semiconductor device containing a dummy wire 有权
标题翻译：包含虚拟线的半导体装置
公开(公告)号：US07042099B2
公开(公告)日：2006-05-09
申请号：US10640004
申请日：2003-08-14
申请人： Nobuyuki Kurashima , Gaku Minamihaba , Dai Fukushima , Yoshikuni Tateyama , Hiroyuki Yano
发明人： Nobuyuki Kurashima , Gaku Minamihaba , Dai Fukushima , Yoshikuni Tateyama , Hiroyuki Yano
IPC分类号： H01L21/00 , H01L27/04 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L23/53295 , H01L21/76807 , H01L21/76832 , H01L21/7684 , H01L23/522 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： There is disclosed a semiconductor device comprising a substrate, a first insulating film which is provided above the substrate and has a relative dielectric constant which is at most a predetermined value, a second insulating film which is provided on a surface of the first insulating film and has a relative dielectric constant greater than the predetermined value, a wire which is provided in a recess for the wire, which is formed passing through the second insulating film and extending into the first insulating film, and a dummy wire provided in a recess for the dummy wire, which is formed passing through the second insulating film and extending into the first insulating film, and is located in a predetermined area spaced from an area where the wire is provided.
摘要翻译：公开了一种半导体器件，包括：衬底;第一绝缘膜，设置在衬底上方，并且具有至多预定值的相对介电常数;第二绝缘膜，设置在第一绝缘膜的表面上;以及具有大于预定值的相对介电常数，设置在通过第二绝缘膜并延伸到第一绝缘膜中的用于导线的凹槽中的导线，以及设置在凹部中的虚拟线，用于虚线穿过第二绝缘膜并延伸到第一绝缘膜中，并且位于与设置导线的区域间隔开的预定区域中。

48. 发明申请

US20060019417A1 Substrate processing method and substrate processing apparatus 审中-公开
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US20060019417A1
公开(公告)日：2006-01-26
申请号：US11187024
申请日：2005-07-22
申请人： Atsushi Shigeta , Gen Toyota , Hiroyuki Yano , Kunio Oishi , Kenya Ito , Masayuki Nakanishi , Kenji Yamaguchi
发明人： Atsushi Shigeta , Gen Toyota , Hiroyuki Yano , Kunio Oishi , Kenya Ito , Masayuki Nakanishi , Kenji Yamaguchi
IPC分类号： H01L21/66 , H01L21/302
CPC分类号： B24B37/013 , B24B9/065
摘要： A substrate processing method is used to polish a substrate. The substrate processing method includes rotating a substrate 13 by a motor 12, polishing a first surface of a peripheral portion of the substrate 13 by pressing a polishing surface of a polishing mechanism 20 against the first surface, determining a polishing end point of the first surface by monitoring a polished state of the first surface, stopping the polishing according to the determining the polishing end point, determining a polishing time spent for the polishing, determining a polishing time for a second surface of the peripheral portion based on the polishing time of the first surface, and polishing the second surface for the determined polishing time.
摘要翻译：基板处理方法用于抛光基板。基板处理方法包括通过马达12旋转基板13，通过将研磨机构20的研磨面压在第一面上来研磨基板13的周边部的第一面，确定第一面的研磨终点通过监测第一表面的抛光状态，根据确定抛光终点停止抛光，确定抛光所用的抛光时间，基于抛光时间确定周边部分的第二表面的抛光时间第一表面，并抛光第二表面以确定抛光时间。

49. 发明申请

US20050245174A1 Method of processing a substrate 有权
标题翻译：处理基板的方法
公开(公告)号：US20050245174A1
公开(公告)日：2005-11-03
申请号：US11085495
申请日：2005-03-22
申请人： Gen Toyota , Atsushi Shigeta , Hiroyuki Yano
发明人： Gen Toyota , Atsushi Shigeta , Hiroyuki Yano
IPC分类号： B24B9/00 , B24B1/00 , B24B9/06 , B24B37/00 , B24D3/28 , H01L21/304
CPC分类号： B24B37/00 , B24B9/065 , B24D3/28
摘要： A method of processing a substrate is disclosed, wherein a sidewall surface of a notch portion formed in a circumferential portion of a substrate to be processed is polished by using a cylindrical polishing head rotatable with an axis as a rotational center.
摘要翻译：公开了一种处理基板的方法，其中通过使用以轴线作为旋转中心可旋转的圆柱形抛光头来抛光形成在待处理基板的圆周部分中的切口部分的侧壁表面。

50. 发明申请

US20050227489A1 Polishing pad and method of manufacturing semiconductor devices 审中-公开
标题翻译：抛光垫和半导体器件的制造方法
公开(公告)号：US20050227489A1
公开(公告)日：2005-10-13
申请号：US10771060
申请日：2004-02-04
申请人： Gaku Minamihara , Yoshikuni Tateyama , Hiroyuki Yano , Tomoo Koumura , Kou Hasegawa
发明人： Gaku Minamihara , Yoshikuni Tateyama , Hiroyuki Yano , Tomoo Koumura , Kou Hasegawa
IPC分类号： B24B37/20 , B24B37/24 , B24B37/26 , B24D3/32 , B24D13/14 , C08J5/14 , C08L3/02 , C08L101/00 , H01L21/304 , H01L21/302
CPC分类号： B24B37/24 , B24D3/32
摘要： Disclosed is a CMP pad which is abrasive-free and comprises cells and/or a recessed portion-forming material both having an average diameter ranging from 0.05 to 290 μm and occupying a region ranging from 0.1% by volume to 5% by volume based on an entire volume of the pad, and an organic material.
摘要翻译：公开了一种无磨料的CMP垫，其包含平均直径范围为0.05至290μm的电池和/或凹陷部分形成材料，并且占据了基于0.1至5体积％的范围，基于整个体积的垫，和有机材料。

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