专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明授权

US08092642B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08092642B2
公开(公告)日：2012-01-10
申请号：US12392133
申请日：2009-02-25
申请人： Toshiaki Hongo , Masaki Hirayama , Tadahiro Ohmi
发明人： Toshiaki Hongo , Masaki Hirayama , Tadahiro Ohmi
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32238 , H01J37/32192 , H01J37/3222
摘要： Provided is a plasma processing apparatus capable of generating a uniform plasma by preventing a nonuniformity of a current flow in a slot antenna. A dielectric plate is disposed to close a top opening of a plate cover and a slot antenna for generating plasma is disposed on the dielectric plate. By allowing an outer periphery of the slot antenna to make direct contact with an inner wall portion of the plate cover by using a conductive member having elasticity, when a microwave is supplied to slot antenna, it is possible to make an electrical resistance between the inner wall portion of the processing vessel and the outer periphery of the flat plate antenna substantially the same at any point in the entire circumference of the processing vessel, so that magnitude of the microwave current flowing in the slot antenna can be made approximately the same.
摘要翻译：提供一种能够通过防止狭缝天线中的电流的不均匀性而产生均匀等离子体的等离子体处理装置。电介质板被设置为封闭板盖的顶部开口，并且用于产生等离子体的缝隙天线设置在电介质板上。通过使用具有弹性的导电构件，允许缝隙天线的外周与板盖的内壁部直接接触，当向缝隙天线供给微波时，可以在内侧处理容器的壁部分和平板天线的外周在处理容器的整个圆周上的任何点处基本相同，使得可以使在缝隙天线中流动的微波电流的大小大致相同。

42. 发明申请

US20110303364A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20110303364A1
公开(公告)日：2011-12-15
申请号：US13145398
申请日：2009-11-02
申请人： Masaki Hirayama , Tadahiro Ohmi
发明人： Masaki Hirayama , Tadahiro Ohmi
IPC分类号： C23C16/50 , H01L21/3065
CPC分类号： H01J37/32192 , H01J37/32229 , H01J37/32238 , H05H1/46 , H05H2001/4622
摘要： A microwave plasma processing apparatus includes: a processing container wherein a gas is excited by microwaves and a substrate is plasma-processed; a microwave source which outputs microwaves; a transmission line through which the microwaves output from the microwave source are transmitted; a plurality of dielectric plates which are arranged on an inner surface of the processing container and emit the microwaves into the processing container; a plurality of first coaxial waveguides which are adjacent to the dielectric plates and through which the microwaves are transmitted to the dielectric plates; and a coaxial waveguide distributor which distributes and transmits the microwaves transmitted through the transmission line to the first coaxial waveguides. The coaxial waveguide distributor includes a second coaxial waveguide which has an input portion and 2 types of branched structures which are connected to the first coaxial waveguides and have different configurations.
摘要翻译：微波等离子体处理装置包括：处理容器，其中气体被微波激发，基板被等离子体处理; 输出微波的微波源; 传输微波从微波源输出的微波的传输线; 多个电介质板，其布置在处理容器的内表面上，并将微波放射到处理容器中; 多个第一同轴波导，与所述电介质板相邻并且所述微波通过所述多个第一同轴波导传输到所述电介质板; 以及将通过传输线传输的微波分配并传输到第一同轴波导的同轴波导分配器。同轴波导分配器包括第二同轴波导，其具有连接到第一同轴波导并具有不同配置的输入部分和两种类型的分支结构。

43. 发明申请

US20110180213A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20110180213A1
公开(公告)日：2011-07-28
申请号：US12997211
申请日：2009-06-03
申请人： Masaki Hirayama , Tadahiro Ohmi
发明人： Masaki Hirayama , Tadahiro Ohmi
IPC分类号： C23F1/08 , H05H1/24 , C23C16/455 , C23C16/50
CPC分类号： H01J37/3244 , H01J37/32192 , H01J37/32449
摘要： A ratio between gas conductances of a main gas passage and a plurality of branch gas passages is increased. A plasma processing apparatus is an apparatus for plasma-processing an object to be processed by exciting gas, and includes a processing container; a gas supply source for supplying a desired gas; a main gas passage distributing the gas supplied from the gas supply source; a plurality of branch gas passages connected to a lower stream side of the main gas passage; a plurality of throttle portions formed on the plurality of branch gas passages to narrow the branch gas passages; and one, two, or more gas discharging holes per each of the branch gas passages, for discharging the gas that has passed through the plurality of throttle portions formed on the plurality of branch gas passages into the processing container.
摘要翻译：主气体通道和多个分支气体通道的气体导通率之间的比率增加。等离子体处理装置是用于通过激励气体等离子体处理待处理物体的装置，并且包括处理容器; 用于供应所需气体的气体供应源; 分配从气体供给源供给的气体的主气体通路; 多个分支气体通道，连接到主气体通道的下游侧; 多个节流部，形成在所述多个分支气体通路上，以使所述分支气体通道变窄; 和每个分支气体通道中的一个，两个或更多个排气孔，用于将已经通过形成在多个分支气体通道上的多个节气门部分的气体排放到处理容器中。

44. 发明申请

US20110114600A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20110114600A1
公开(公告)日：2011-05-19
申请号：US12997183
申请日：2009-06-03
申请人： Masaki Hirayama , Tadahiro Ohmi
发明人： Masaki Hirayama , Tadahiro Ohmi
IPC分类号： C23F1/08 , C23C16/50 , C23C16/455 , C23F1/00
CPC分类号： H05H1/46 , C03C17/002 , C23C16/511 , H01J37/32192 , H01J37/32211 , H01J37/32229
摘要： Provided is a coaxial waveguide distributor including a coaxial waveguide which extends non-perpendicularly at a branched portion. A plasma processing apparatus in which a gas is excited by microwaves to plasma process an object to be processed includes a processing container, a microwave source which outputs microwaves, a transmission line which transmits the microwaves output from the microwave source, a plurality of dielectric plates which are provided on an inner wall of the processing container and emit microwaves into the processing container, a plurality of first coaxial waveguides which are adjacent to the plurality of dielectric plates and transmit microwaves to the plurality of dielectric plates, and one stage or two or more stages of a coaxial waveguide distributor which distributes and transmits the microwaves transmitted through the transmission line to the plurality of first coaxial waveguides. The coaxial waveguide distributor include s a second coaxial waveguide having an input portion and three or more of third coaxial waveguides which are connected to the second coaxial waveguide. Each of the third coaxial waveguides extends non-perpendicularly with respect to the second cable.
摘要翻译：提供了一种同轴波导分配器，其包括在分支部分处非垂直延伸的同轴波导。其中气体被微波激发以等离子体处理被处理物体的等离子体处理装置包括处理容器，输出微波的微波源，将微波源输出的微波传输的传输线，多个电介质板它们设置在处理容器的内壁上并向处理容器发射微波;多个第一同轴波导，其与多个电介质板相邻并且将微波传输到多个电介质板，以及一个或两个或两个更多级的同轴波导分配器，其将通过传输线传输的微波分布并传输到多个第一同轴波导。同轴波导分配器包括具有连接到第二同轴波导的输入部分和三个或更多个第三同轴波导的第二同轴波导。第三同轴波导中的每一个相对于第二缆线非垂直地延伸。

45. 发明申请

US20100170872A1 PLASMA PROCESSING APPARATUS AND METHOD FOR USING PLASMA PROCESSING APPARATUS 失效
标题翻译：等离子体处理装置和使用等离子体处理装置的方法
公开(公告)号：US20100170872A1
公开(公告)日：2010-07-08
申请号：US12663662
申请日：2008-06-11
申请人： Masaki Hirayama , Tadahiro Ohmi
发明人： Masaki Hirayama , Tadahiro Ohmi
IPC分类号： C23F1/00 , B08B6/00
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/3222 , H01J37/32229 , H01J37/32238
摘要： The plasma processing apparatus includes: a processing container including a metal; an electromagnetic wave source outputting an electromagnetic wave; a dielectric plate facing an inner wall of the processing container and transmitting the electromagnetic wave, which is output from the electromagnetic wave source, into the processing container; and a groove formed in an inner surface of the processing container and functioning as a propagation disturbing portion. If a low frequency microwave is supplied, the propagation of a conductor surface wave can be suppressed by the groove.
摘要翻译：等离子体处理装置包括：包括金属的处理容器; 输出电磁波的电磁波源; 面向处理容器的内壁的电介质板，将从电磁波源输出的电磁波传送到处理容器内; 以及形成在处理容器的内表面中并用作传播干扰部分的凹槽。如果提供低频微波，则可以通过沟槽来抑制导体表面波的传播。

46. 发明授权

US07723637B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US07723637B2
公开(公告)日：2010-05-25
申请号：US11592253
申请日：2006-11-03
申请人： Tadahiro Ohmi , Masaki Hirayama , Takahiro Horiguchi
发明人： Tadahiro Ohmi , Masaki Hirayama , Takahiro Horiguchi
IPC分类号： B23K10/00
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32229
摘要： The purpose of the present invention is to provide homogeneous plasma in longitudinal direction of a plasma processing apparatus applicable to multiple processes. A microwave waveguide 10 with a plurality of variable couplers 12 is placed in a vacuum chamber 21. The microwave generated in a microwave generator 23 is introduced into the microwave waveguide 10 via a waveguide 24. And a plasma 22 in the chamber 21 is generated by the microwave 25. Intensity distribution of the microwave 25 in the microwave waveguide 10 can be varied by moving a plurality of variable couplers 12 individually upward or downward as shown by two-way arrow.
摘要翻译：本发明的目的是提供适用于多个工艺的等离子体处理装置的纵向均匀等离子体。具有多个可变耦合器12的微波波导10被放置在真空室21中。在微波发生器23中产生的微波通过波导管24被引入微波波导10中。室21中的等离子体22由微波25.微波25中的微波25的强度分布可以通过单独向上或向下移动多个可变耦合器12来改变，如双向箭头所示。

47. 发明授权

US07670454B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US07670454B2
公开(公告)日：2010-03-02
申请号：US11337026
申请日：2006-01-23
申请人： Tadahiro Ohmi , Masaki Hirayama , Shigetoshi Sugawa , Tetsuya Goto
发明人： Tadahiro Ohmi , Masaki Hirayama , Shigetoshi Sugawa , Tetsuya Goto
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/3222 , H01J37/32192 , H01J37/32229 , H01J37/3244
摘要： In a microwave plasma processing apparatus, the reflection of microwave by the joint unit between the microwave supplying waveguide and the microwave antenna is reduced by providing a taper surface or a member having a medium permittivity between the microwave supplying waveguide and the microwave antenna so as to moderate an impedance change. Accordingly, the efficiency of power supplying is improved, and reduced discharge ensures stable formation of plasma.
摘要翻译：在微波等离子体处理装置中，通过在微波供给波导与微波天线之间设置锥形表面或具有介质介电常数的构件来减小微波提供波导与微波天线之间的接合单元的微波反射，从而中等阻抗变化。因此，提高供电效率，减少放电确保等离子体的稳定形成。

48. 发明授权

US07520245B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US07520245B2
公开(公告)日：2009-04-21
申请号：US10861388
申请日：2004-06-07
申请人： Tadahiro Ohmi , Masaki Hirayama
发明人： Tadahiro Ohmi , Masaki Hirayama
IPC分类号： C23C16/511 , C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/34
CPC分类号： C23C16/45565 , C23C16/24 , C23C16/345 , C23C16/45578 , C23C16/511 , H01J37/32192 , H01J37/3244
摘要： In a microwave plasma processing apparatus, a metal made lattice-like shower plate 111 is provided between a dielectric material shower plate 103, and a plasma excitation gas mainly an inert gas and a process gas are discharged form different locations. High energy ions can be incident on a surface of the substrate 114 by grounding the lattice-like shower plate. The thickness of each of the dielectric material separation wall 102 and the dielectric material at a microwave introducing part is optimized so as to maximize the plasma excitation efficiency, and, at the same time, the distance between the slot antenna 110 and the dielectric material separation wall 102 and a thickness of the dielectric material shower plate 103 are optimized so as to be capable of supplying a microwave having a large power.
摘要翻译：在微波等离子体处理装置中，在介电材料喷淋板103和主要为惰性气体的等离子体激发气体之间设置金属制的格子状喷淋板111，并且处理气体从不同的位置排出。高能离子可以通过使网状淋浴板接地而入射在基板114的表面上。为了使等离子体激发效率达到最大，在微波引入部分的介电材料隔离壁102和电介质材料中的每一个的厚度被优化，同时，缝隙天线110与电介质材料分离之间的距离电介质材料喷淋板103的厚度优化，能够供给具有大功率的微波。

49. 发明申请

US20090065480A1 Plasma Processing Apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20090065480A1
公开(公告)日：2009-03-12
申请号：US11990309
申请日：2006-08-04
申请人： Tadahiro Ohmi , Masaki Hirayama
发明人： Tadahiro Ohmi , Masaki Hirayama
IPC分类号： B44C1/22 , C23F1/08 , B01J19/08 , C23C16/54
CPC分类号： H05H1/46 , H01J37/32192
摘要： Provided is a plasma processing apparatus which can perform uniform processing even when a substrate to be processed has a large area. The plasma processing apparatus propagates microwaves introduced into wave guide tubes to dielectric plates through slots, and performs plasma processing to the surface of the substrate by converting a gas supplied into a vacuum container into the plasma state. In the plasma processing apparatus, a plurality of waveguide tubes are arranged in parallel, a plurality of dielectric plates are arranged for each waveguide tube, and partitioning members formed of a conductor and grounded are arranged between the adjacent dielectric plates. The in-tube wavelength of the waveguide tube is adjusted to be an optimum value by vertically moving a plunger. Furthermore, unintended plasma generation is eliminated in a space between the dielectric plate and the adjacent member, and stable plasma can be efficiently generated. As a result, high-speed and uniform processings, such as etching, film-forming, cleaning, ashing, can be performed.
摘要翻译：提供一种等离子体处理装置，即使在待处理基板面积大的情况下也能够进行均匀的处理。等离子体处理装置通过槽将引入导波管的微波传播到电介质板，通过将供给真空容器的气体转换为等离子体状态，对基板的表面进行等离子体处理。在等离子体处理装置中，多个波导管并列配置，为每个波导管布置多个电介质板，并且在相邻的电介质板之间配置由导体形成的分离构件。通过垂直移动柱塞将波导管的管内波长调节为最佳值。此外，在电介质板和相邻构件之间的空间中消除了意外的等离子体产生，并且可以有效地产生稳定的等离子体。结果，可以进行诸如蚀刻，成膜，清洁，灰化等高速均匀的处理。

50. 发明授权

US07432468B2 Plasma processing apparatus and plasma processing method 失效
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US07432468B2
公开(公告)日：2008-10-07
申请号：US11694102
申请日：2007-03-30
申请人： Shinsuke Oka , Takahiro Horiguchi , Kazuaki Nishimura , Masayuki Kitamura , Tadahiro Ohmi , Masaki Hirayama
发明人： Shinsuke Oka , Takahiro Horiguchi , Kazuaki Nishimura , Masayuki Kitamura , Tadahiro Ohmi , Masaki Hirayama
IPC分类号： B23K10/00
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32238
摘要： A microwave plasma processing apparatus 100 allows microwaves, passed through a plurality of slots 37, to be transmitted through a plurality of dielectric parts 31 supported by beams 26, raises a gas to plasma with the transmitted microwaves and processes a substrate G with the plasma. The beams 26 are made to project out toward the substrate so as to ensure that the plasma electron density Ne around the ends of the beams 26 is equal to or greater than a cutoff plasma electron density Nc. The projecting beams 26 inhibits interference attributable to surface waves generated with the electrical field energy of microwaves transmitted through adjacent dielectric parts 31 and interference attributable to electrons and ions propagated through the plasma generated under a given dielectric part 31 to reach the plasma generated under an adjacent dielectric part as the plasma generated under the individual dielectric parts 31 is diffused.
摘要翻译：微波等离子体处理装置100允许通过多个狭槽37的微波透过由梁26支撑的多个电介质部分31，并使透射的微波将气体升高到等离子体并用等离子体处理衬底G. 使梁26朝向基板突出，以确保梁26的端部周围的等离子体电子密度Ne等于或大于截止等离子体电子密度Nc。投影光束26抑制归因于通过相邻电介质部件31传播的微波的电场能产生的表面波的干扰，以及由在给定电介质部分31下产生的等离子体传播的电子和离子产生的干扰，以达到在相邻电介质部分31之下产生的等离子体作为在各个电介质部31下产生的等离子体的介质部分扩散。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式