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41. 发明授权

US5072437A Optical information reproducing apparatus 失效
标题翻译：光信息重放装置
公开(公告)号：US5072437A
公开(公告)日：1991-12-10
申请号：US483697
申请日：1990-02-23
申请人： Kiyofumi Chikuma
发明人： Kiyofumi Chikuma
IPC分类号： G11B7/125 , G11B7/13 , G11B7/135
CPC分类号： B82Y10/00 , G11B7/125 , G11B7/13 , G11B7/1381
摘要： To prevent a drop in signal level at high spatial frequencies, an optical information reproducing apparatus retrieves the primary output of light reflected from the surface of a recording medium. In the different embodiments of the invention, either a shield plate with a pinhole in the path of the light is provided, or a photodetector having a plurality of light-receiving elements is provided, a selection circuit being connected to the elements and selecting the highest output thereof.
摘要翻译：为了防止在高空间频率处的信号电平下降，光信息再现装置检索从记录介质的表面反射的光的主要输出。在本发明的不同实施例中，提供了在光路中具有针孔的屏蔽板，或者提供具有多个光接收元件的光电检测器，选择电路连接到元件并选择最高输出。

42. 发明授权

US5063556A Optical information recording medium providing reflected light at two different wavelengths, recording apparatus utilizing the same 失效
标题翻译：在两个不同波长下提供反射光的光学信息记录介质，使用其的记录装置
公开(公告)号：US5063556A
公开(公告)日：1991-11-05
申请号：US489636
申请日：1990-03-07
申请人： Kiyofumi Chikuma
发明人： Kiyofumi Chikuma
IPC分类号： G11B7/00 , G11B7/004 , G11B7/005 , G11B7/09 , G11B7/13 , G11B7/135 , G11B7/24 , G11B7/244
CPC分类号： G11B7/24 , G11B7/0052 , Y10S428/913 , Y10T428/24917
摘要： Recording medium having islands of light-emitting material in regions formed between a transparent substrate, and a reflective layer disposed on one princpal surface thereof. The islands of light-emitting material are sensitive to illuminating light incident thereupon, and in response thereto, emit light having a different wavelength than said illuminating light. Reproducing apparatus separates an overall reflected light from the recording medium into first reflected light corresponding to a reflected scanning light, and second reflected light corresponding to emitted light from the light emitting material.

43. 发明授权

US5052772A Fiber type light wave-length converting apparatus 失效
标题翻译：光纤类型光波长转换装置
公开(公告)号：US5052772A
公开(公告)日：1991-10-01
申请号：US617817
申请日：1990-11-26
申请人： Sota Okamoto , Kiyofumi Chikuma
发明人： Sota Okamoto , Kiyofumi Chikuma
IPC分类号： G02B6/00 , G02B5/00 , G02B6/02 , G02F1/37 , G02F1/383 , G11B7/125 , G11B7/135
CPC分类号： G11B7/1398 , G02B5/001 , G02F1/383 , G11B7/1376 , G02F2001/372
摘要： A fiber type light wave-length converting apparatus having a fiber type light wave-length converting element and an axicon lens. The fiber type light wave-length converting element is arranged to a position relative to the axicon lens satisyfing a predetermined condition, whereby an SH wave of a parallel light having a circular intensity distribution is obtained.

44. 发明申请

US20070099321A1 Method for fabricating semiconductor laser device 审中-公开
标题翻译：制造半导体激光器件的方法
公开(公告)号：US20070099321A1
公开(公告)日：2007-05-03
申请号：US10581202
申请日：2004-09-27
申请人： Mamoru Miyachi , Yoshinori Kimura , Kiyofumi Chikuma
发明人： Mamoru Miyachi , Yoshinori Kimura , Kiyofumi Chikuma
IPC分类号： H01L21/00 , H01L21/28 , H01L21/3205
CPC分类号： H01S5/4043 , H01S5/0217 , H01S5/0425 , H01S5/22 , H01S5/4087
摘要： A first intermediate body is fabricated on a semiconductor substrate. The first intermediate body includes a first lasing portion of a multi-layer stack and a metal adherent layer. A second intermediate body is fabricated on a support substrate. The second intermediate body includes a second lasing portion formed of a multi-layer stack to be less in size than the first lasing portion, and a groove formed adjacent thereto to form a metal adherent layer. Then, with waveguide paths brought into close proximity, the adherent layers of the first and second intermediate bodies are fused to generate an integrated adherent layer, thereby securely adhering the first and second lasing portions to each other. Thereafter, the support substrate is stripped off from the second lasing portion, thereby allowing the adherent layer to be partially exposed. A semiconductor laser device is thus fabricated which has the exposed adherent layer as a common electrode.
摘要翻译：在半导体衬底上制造第一中间体。第一中间体包括多层堆叠的第一激光部分和金属粘附层。在支撑基板上制造第二中间体。第二中间体包括由多层叠层形成的尺寸小于第一激光部分的第二激光部分和与其相邻形成的沟槽以形成金属粘附层。然后，随着波导路径相互靠近，第一和第二中间体的粘附层被熔合以产生一体化的粘合层，从而将第一和第二激光部分牢固地粘附到彼此。此后，从第二激光部分剥离支撑基板，从而允许粘附层部分露出。因此制造了具有暴露的粘附层作为公共电极的半导体激光器件。

45. 发明授权

US06748001B1 Semiconductor laser device providing laser light of two wavelengths and method of fabricating the same 失效
标题翻译：提供两种波长的激光的半导体激光器件及其制造方法
公开(公告)号：US06748001B1
公开(公告)日：2004-06-08
申请号：US09516731
申请日：2000-03-01
申请人： Mitsuru Nishitsuka , Hiroyuki Ota , Kiyofumi Chikuma
发明人： Mitsuru Nishitsuka , Hiroyuki Ota , Kiyofumi Chikuma
IPC分类号： H01S500
CPC分类号： G11B7/1275 , G11B2007/0006 , H01S5/0425 , H01S5/22 , H01S5/32316 , H01S5/32341 , H01S5/4025 , H01S5/405 , H01S5/4087
摘要： An object of the present invention is to provide a semiconductor laser device which is capable of selectively emitting two kinds of laser light of light emitting characteristics differing in wavelength, light emission point, beam shape, light emission power, longitudinal mode and so on, by switching the direction of the voltage applied to the device. There is provided the semiconductor laser device including first and second laser units, each unit having a ridge type structure and each unit comprising a multilayer structure body made of at least an n-type semiconductor layer, an active layer and a p-type semiconductor layer deposited in this order, and a p-side electrode and an n-side electrode, wherein the p-side electrode and the n-side electrode of the first laser unit and the n-side electrode and the p-side electrode of the second laser unit are electrically connected, respectively.
摘要翻译：本发明的目的是提供一种能够选择性地发射波长不同，发光点，光束形状，发光功率，纵向模式等的发光特性的两种激光的半导体激光装置，其中，切换施加到设备的电压的方向。提供了包括第一和第二激光单元的半导体激光装置，每个单元具有脊型结构，并且每个单元包括由至少n型半导体层，有源层和p型半导体层制成的多层结构体以及p侧电极和n侧电极，其中第一激光单元的p侧电极和n侧电极以及第二激光单元的n侧电极和p侧电极激光单元分别电连接。

46. 发明授权

US06411636B1 Nitride semiconductor laser and method of fabricating the same 失效
标题翻译：氮化物半导体激光器及其制造方法
公开(公告)号：US06411636B1
公开(公告)日：2002-06-25
申请号：US09468082
申请日：1999-12-21
申请人： Hiroyuki Ota , Kiyofumi Chikuma
发明人： Hiroyuki Ota , Kiyofumi Chikuma
IPC分类号： H01S500
CPC分类号： H01S5/0201 , H01S5/0202 , H01S5/32341
摘要： A method for fabricating a nitride-semiconductor laser constituted by superimposing a plurality of crystal layers respectively made of a group III nitride semiconductor (AlxGa1−x)1−YInyN (0≦x≦1, 0≦y≦1) on a cleavable or parting substrate in order comprises the crystal layer forming step of forming a plurality of crystal layers on a cleavable or parting substrate, the step of applying a light beam from the substrate side toward the interface between the substrate and the crystal layers and thereby forming the decomposed-matter area of the nitride semiconductor, and the step of cleaving or parting the substrate along a straight line intersecting with the decomposed-matter area and thereby forming a cleavage plane.
摘要翻译：一种制造氮化物半导体激光器的方法，其通过将由III族氮化物半导体（Al x Ga 1-x）1-Y In y N（0≤x≤1,0<= y <1））分别制成的多个晶体层叠加而构成，在可切割或分离基板上的顺序包括在可切割或分离的基板上形成多个晶体层的晶体层形成步骤，将从基板侧的光束施加到基板和晶体层之间的界面的步骤，以及从而形成氮化物半导体的分解物区域，以及沿着与分解物区域相交的直线切断或分离基板的步骤，从而形成解理面。

47. 发明授权

US06270839B1 Device for feeding raw material for chemical vapor phase deposition and method therefor 有权
标题翻译：用于进行化学气相沉积原料的装置及其方法
公开(公告)号：US06270839B1
公开(公告)日：2001-08-07
申请号：US09621739
申请日：2000-07-21
申请人： Atsushi Onoe , Ayako Yoshida , Kiyofumi Chikuma
发明人： Atsushi Onoe , Ayako Yoshida , Kiyofumi Chikuma
IPC分类号： C23C1600
CPC分类号： C23C16/4481
摘要： A raw material feeding apparatus is provided for a film-forming apparatus in which a thin film is formed from a solid matter as a raw material during chemical vapor-phase deposition. The apparatus includes sub-containers each having an opening for introduction of a gas, an opening for discharge of a gas, a bottom, on which a solid raw material is spread between the inlet opening and the outlet opening, and a wall defining a gap, in which a gas being introduced and discharged is made to contact the solid raw material spread on the bottom while the gas is moved on the surfaces of the material. The apparatus also includes a raw material container for receiving and holding the sub-containers. The apparatus also includes a heating device for heating the raw material container, and carrier gas conveying tubes for introducing a carrier gas into the raw material container and including a passage communicated to the outlet openings of the sub-containers.
摘要翻译：本发明提供一种原料输送装置，用于在化学气相沉积期间以固体物质作为原料形成薄膜的成膜装置。该装置包括各自具有用于引入气体的开口，用于排出气体的开口，底部，其上固体原料在其上在入口和出口之间铺展的子容器，以及限定间隙的壁其中引入和排出的气体在气体在材料的表面上移动时与扩散在底部上的固体原料接触。该设备还包括用于接收和保持子容器的原料容器。该装置还包括用于加热原料容器的加热装置和用于将载气引入原料容器中的载气输送管，并且包括连通到子容器的出口的通道。

48. 发明授权

US5904771A Method of subliming material in CVD film preparation method 失效
标题翻译： CVD膜制备方法升华材料的方法
公开(公告)号：US5904771A
公开(公告)日：1999-05-18
申请号：US826626
申请日：1997-04-03
申请人： Yuzo Tasaki , Mamoru Sato , Shuji Yoshizawa , Atsushi Onoe , Kiyofumi Chikuma , Ayako Yoshida
发明人： Yuzo Tasaki , Mamoru Sato , Shuji Yoshizawa , Atsushi Onoe , Kiyofumi Chikuma , Ayako Yoshida
IPC分类号： C30B25/14 , C23C16/44 , C23C16/448 , C30B23/02 , C30B25/02 , C30B29/30 , H01L21/205 , H01L21/31 , C30B25/12
CPC分类号： C30B23/02 , C23C16/4481 , C30B23/002 , C30B25/02 , C30B29/30
摘要： A method of subliming material is provided for use in a CVD film preparation method wherein a CVD precursor is sublimed from its solid state by heating to a temperature not exceeding its melting point, thereby producing a vapor of the precursor, and the vapor of the precursor is transported to a reactor. The method of subliming material comprises the steps of forming the solid-state compound into a film, covering a back surface of the film with a non-reactive support and exposing a front surface of the film to an atmosphere as a sublimation surface. The method maintains the exposed surface area of the solid compound constant during processing.
摘要翻译：提供了一种升华材料的方法，用于CVD膜制备方法，其中通过加热至不超过其熔点的温度从而将CVD前体从其固态升华，从而产生前体的蒸气和前体的蒸气被运送到反应堆。升华材料的方法包括以下步骤：将固态化合物形成膜，用非反应性载体覆盖膜的后表面，并将膜的前表面暴露于作为升华表面的气氛。该方法在加工过程中保持固体化合物的暴露表面积恒定。

49. 发明授权

US5722184A Method for feeding metalorganic gas from solid raw materials in MOCVD and its device 失效
标题翻译：从MOCVD固体原料中提取金属有机气体的方法及其装置
公开(公告)号：US5722184A
公开(公告)日：1998-03-03
申请号：US624894
申请日：1996-03-27
申请人： Atsushi Onoe , Kiyofumi Chikuma , Hirofumi Kubota
发明人： Atsushi Onoe , Kiyofumi Chikuma , Hirofumi Kubota
IPC分类号： G02F1/35 , C23C16/448 , C30B25/02 , C30B25/14 , C30B29/16 , G02F1/355 , F26B17/00
CPC分类号： C30B25/14 , C23C16/4481
摘要： A method for feeding metalorganic gas from solid raw materials in MOCVD and its device provides an absorption reagent consisting of porous grains into which a solid metalorganic material is absorbed and the passing of the carrier gas among the absorptive porous grains in the container under a high thermal condition. The mixture gas including the metalorganic gas at a constant density is obtained in stability for a long time.
摘要翻译：在MOCVD中从固体原料中提供金属有机气体的方法及其装置提供了一种吸收剂，其由多孔颗粒组成，固体金属有机材料被吸收到该吸收剂中，并且载体气体在高热量下容纳在容器中的吸收性多孔颗粒之间条件。长时间稳定地得到包含恒定密度的金属有机气体的混合气体。

50. 发明授权

US5581396A Wavelength converting device having an epitaxial waveguide layer 失效
标题翻译：具有外延波导层的波长转换器件
公开(公告)号：US5581396A
公开(公告)日：1996-12-03
申请号：US491620
申请日：1995-06-19
申请人： Hirofumi Kubota , Kiyofumi Chikuma
发明人： Hirofumi Kubota , Kiyofumi Chikuma
IPC分类号： G02F1/37 , G02B6/13 , G02F1/35 , G02F1/377 , H01S3/06 , H01S3/109
CPC分类号： G02F1/377 , G02F2001/3548
摘要： A wavelength converting device comprises: a substrate; an epitaxial cladding layer of K.sub.3 Li.sub.2-x Nb.sub.5+x-y Ta.sub.y O.sub.15+2x (-0.4.ltoreq.x.ltoreq.0.20, 0.ltoreq.y.ltoreq.0.33) deposited on the substrate by metalorganic compound gases including lithium, potassium, tantalum and niobium respectively by using a MOCVD method; and an epitaxial waveguide layer of K.sub.3 Li.sub.2-x' Nb.sub.5+x'-y' Ta.sub.y' O.sub.15+2x' (-0.4.ltoreq.x'.ltoreq.0.20, 0.ltoreq.y'.ltoreq.0.33, x+0.0005.ltoreq.x'.ltoreq.x+0.005 and x'.noteq.x) deposited on the epitaxial cladding layer by metalorganic compound gases including lithium, potassium, tantalum and niobium respectively by using the MOCVD method and having a refractive index larger than that of the epitaxial cladding layer thereby operat-able with a high thermal and electrical stability and a high output even when driven by a high load optical power.
摘要翻译：波长转换装置包括：基板; 通过包括锂，钾，钽的金属有机化合物气体沉积在衬底上的K3Li2-xNb5 + x-yTayO15 + 2x（-0.4≤x≤0.20,0≤y≤0.33）的外延包覆层和铌分别使用MOCVD法; 和K3Li2-x'Nb5 + x'-y'Tay'O15 + 2x'（-0.4≤x≤0.20,0≤y≤0.33，x + 0.0005）的外延波导层通过使用MOCVD法分别通过包括锂，钾，钽和铌的金属有机化合物气体沉积在外延包层上，并且折射率大于因此即使在高负载光功率驱动的情况下，外延包覆层也可以具有高的热和电稳定性以及高的输出。

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