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41. 发明专利

JP2004143470A Steel sheet excellent in paint bake hardenability and retarded natural aging hardenability and its manufacturing process 审中-公开
公开(公告)号：JP2004143470A
公开(公告)日：2004-05-20
申请号：JP2002292572
申请日：2002-10-04
申请人： Nippon Steel Corp , 新日本製鐵株式会社
发明人： YOSHINAGA NAOKI , TAKAHASHI MANABU , MARUYAMA NAOKI , SUGIURA NATSUKO , TAKAHASHI ATSUSHI
IPC分类号： C21D9/46 , C22C38/00 , C22C38/38 , C22C38/58
摘要： PROBLEM TO BE SOLVED: To provide a steel sheet of good paint bake hardenability and retarded natural aging hardenability and its manufacturing process.
SOLUTION: The steel sheet which contains, by mass%, 0.0005-0.0025% C, ≤2.0% Si, ≤3.0% Mn, ≤0.15% P, ≤0.015% S, 0.2-1.4% Cr, 0.003-0.020% O, ≤0.008% Al, 0.001-0.005% N and the balance Fe and inevitable impurities is offered. It is preferable that solid-soluted C is ≤0.0020% and solid-soluted N is 0.0005-0.004%. A hot rolled and cold rolled steel sheet, and further a cold steel sheet for a galvanized sheet which has good paint bake hardenability and retarded natural aging hardenability is obtained by remaining solid-soluted N and adding Cr and O into an ultralow carbon steel.
COPYRIGHT: (C)2004,JPO

42. 发明专利

JPH11106297A GROWTH OF SILICON CARBIDE SINGLE CRYSTAL HAVING LOW RESISTANCE 失效
公开(公告)号：JPH11106297A
公开(公告)日：1999-04-20
申请号：JP26745297
申请日：1997-09-30
申请人： NIPPON STEEL CORP
发明人： TAKAHASHI ATSUSHI , OTANI NOBORU , KATSUNO MASAKAZU
IPC分类号： C30B27/00 , C30B23/00 , C30B29/36 , H01L21/203
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a SiC single crystal having low resistance in a high yield. SOLUTION: This method for growing a SiC single crystal comprises arranging a seed crystal composed of a SiC single crystal and SiC raw material powder in a crucible made of graphite, heating and sublimating the raw material powder and recrystallizing the seed crystal kept at a temperature lower than the temperature of the raw material. In this case, a nitrogen gas is used as an atmosphere gas and a crystal plane substrate having an angle of inclination a in the [0001] direction from 11-20} plane in the range of -30 deg.

43. 发明专利

JPH1045499A PRODUCTION OF SILICON CARBIDE SINGLE CRYSTAL AND SEED CRYSTAL USED THEREFOR 失效
公开(公告)号：JPH1045499A
公开(公告)日：1998-02-17
申请号：JP20216496
申请日：1996-07-31
申请人： NIPPON STEEL CORP
发明人： OTANI NOBORU , TAKAHASHI ATSUSHI , KATSUNO MASAKAZU , YASHIRO HIROKATSU , KANETANI MASATOSHI
IPC分类号： C30B23/00 , C30B29/36 , H01L33/16 , H01L33/34 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide the production capable of manufacturing a silicon carbide single crystal wafer having a low level of defects and a large diameter from the single crystal produced. SOLUTION: This production comprises a stage for growing a silicon carbide single crystal by a sublimation/recrystallization method using a seed crystal. In the production, a seed crystal having a conical shape, -10 to +10 deg., or desirably -5 to +5 deg. of an angle between the direction of the central axis and the direction of the (0001) plane and 20 to 90 deg., or desirably 20 to 60 deg. of an apical angle, is used.

44. 发明专利

JPH07330493A METHOD FOR GROWING 4H TYPE SILICON CARBIDE SINGLE CRYSTAL 失效
公开(公告)号：JPH07330493A
公开(公告)日：1995-12-19
申请号：JP12646394
申请日：1994-06-08
申请人： NIPPON STEEL CORP
发明人： KANETANI MASATOSHI , TAKAHASHI ATSUSHI , OTANI NOBORU
IPC分类号： C30B23/02 , C30B29/36
摘要： PURPOSE:To obtain a 4H type SiC single crystal by using the (0001) C face of 15R type SiC as a seed crystal in a sublimation recrystallization method of SiC. CONSTITUTION:The seed crystal S is produced by shaping and polishing the planar amorphous 15R type SiC single crystal and executing face decision by a steam oxidation method, then subjecting the single crystal to acid washing with HF and drying. The seed crystal is then mounted by directing the (0001) Si face of the seed crystal 5 toward the side of a crucible cap 3 and directing the (0001) C face as a crystal growth face 6 in a direction opposite to the crucible cap 3. SiC raw material powder 2 is packed into the crucible 1 and the crucible cap 3 holding the seed crystal 5 in the mounting part 4 is put on the crucible 1 packed with the SiC powder 2 and thereafter, the crucible is arranged in a vessel in which vacuum is maintainable. The inside of the system is evacuated to a high vacuum and an inert gaseous atmosphere of a pressure 10 to 20Torr is generated and thereafter, the crucible 1 is heated to sublimate the SiC powder 2 at 2300 to 2400 deg.C, by which the SiC crystal is grown at a crystal growth rate 0.6 to 1.2mm/ hour on the growth surface of the seed crystal kept at 2150 to 2250 deg.C slightly lower than the temp. of the SiC powder and the 4H type SiC single crystal is obtd.

45. 发明专利

JPH07243665A FLOOR-DIFFUSING AIR-CONDITIONING SYSTEM USING DIFFUSING PLATE 失效
公开(公告)号：JPH07243665A
公开(公告)日：1995-09-19
申请号：JP5671894
申请日：1994-03-01
申请人： NIPPON STEEL CORP , TAKASAGO THERMAL ENGINEERING
发明人： NAKATANI HIROSHI , OOWASE YASUSHI , TAKAHASHI ATSUSHI , TAKEMURA MITSUHIKO
IPC分类号： F24F3/00 , F24F3/044 , F24F13/068 , F24F13/08
摘要： PURPOSE:To make a wind speed distribution of an air flow in an underfloor chamber uniform by only a simple execution in a floor diffusing air conditioning system in which an underfloor space is used as a conditioned air supply underfloor chamber and the air is supplied from diffusers provided at a floor into a room. CONSTITUTION:A diffusing chamber 1 for supplying conditioned air from an air conditioner into an underfloor chamber 2 is connected to one side surface of the chamber 2. A diffusing plate 3 disposed perpendicularly to an air supplying direction is installed on a bottom in the chamber 2. A width (w) of the chamber 1 is set to 1/3 or more of a width W of the chamber 2, a height (h) of the plate 3 is set to 1/2 of a height H of the chamber 2, and a length L of the plate 3 is set to 2/3 of the width W of the chamber 1. Thus, an air flow from the diffusing chamber is collided with the plate, then suitably divided laterally and upward, and a wind speed distribution of the air flow in the underfloor chamber is made uniform.

46. 发明专利

JPH0797299A METHOD FOR GROWING SIC SINGLE CRYSTAL 失效
公开(公告)号：JPH0797299A
公开(公告)日：1995-04-11
申请号：JP26418893
申请日：1993-09-28
申请人： NIPPON STEEL CORP
发明人： TAKAHASHI ATSUSHI , KANETANI MASATOSHI
IPC分类号： C04B41/91 , C30B23/02 , C30B29/36 , H01L21/308
摘要： PURPOSE:To enable the growth of an SiC seed crystal ingot having high quality by removing the crystal surface of a prescribed seed crystal by molten KOH etching. CONSTITUTION:A single crystal ingot grown on the {0001} plane of an SiC single crystal is longitudinally cut and mirror-polished to obtain a {1010} wafer. The surface of the wafer is etched with molten KOH at about 530 deg.C for about 15min. A crystal is grown on the etched wafer surface at a raw material temperature of about 2360 deg.C, a substrate temperature of about 2300 deg.C, an atmospheric pressure of about 20 Torr and a growth rate of about 1mm/h in the direction vertical to the substrate. A wafer having an off-angle of about 5 deg. relative to the {0001} plane is sliced from the obtained crystal and etched with molten KOH to produce an SiC single crystal having conchoidal etch pits at both sides of the boundary between the seed crystal and the grown crystal on the wafer surface.

47. 发明专利

JPH0563242A LEAD FRAME FOR LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE LAMP 失效
公开(公告)号：JPH0563242A
公开(公告)日：1993-03-12
申请号：JP24466291
申请日：1991-08-29
申请人： NIPPON STEEL CORP
发明人： FUJIWARA YUICHIRO , TAKAHASHI ATSUSHI , KANETANI MASATOSHI
IPC分类号： H01L23/48 , H01L33/34 , H01L33/56 , H01L33/58 , H01L33/60 , H01L33/62
摘要： PURPOSE:To prevent any current leakage due to swelling of extruded conductive adhesive which is applied for mounting an light emitting diode to a lead frame in the manufacturing process of light emitting diode lamp. CONSTITUTION:A mounting section 2 is prepared on the recessed part 11d of a lead frame used for manufacturing a light emitting diode lamp in such a manner that the protruded section will have the upper face whose area is equal to that of the mounting surface for a light emitting diode chip 1 or smaller, and a conductive adhesive 4 is dropped on the upper face of the section 2 to mount the chip 1. Because the adhesive 4 extruding from the lower face of the chip 1 flows over the circumference of the section 2 having a protruded section, no swelling is generated on the side faces of the chip 1, so that the current leakage can be prevented.

48. 发明专利

JPH04268723A LIQUID PHASE EPITAXIAL GROWTH METHOD OF SILICON CARBIDE 失效
公开(公告)号：JPH04268723A
公开(公告)日：1992-09-24
申请号：JP2979291
申请日：1991-02-25
申请人： NIPPON STEEL CORP
发明人： FUJIWARA YUICHIRO , TAKAHASHI ATSUSHI , KANETANI MASATOSHI
IPC分类号： H01L21/208 , H01L33/16 , H01L33/34
摘要： PURPOSE:To provide the title liquid phase epitaxial growing method of 6H type silicon carbide single crystal thin film applicable to the manufacture of silicon carbide blue light emitting diode in high luminous intensity. CONSTITUTION:Within the title liquid epitaxial growing method wherein the silicon carbide thin film is grown on the silicon carbide single crystal substrate by immersing substrate in a silicon melted solution contained in a crucible, as for said substrate, (0001) surface of 4H type silicon carbide single crystal is used and the temperature of the silicon melted solution near substrate is specified to be at 1650 deg.C-1900 deg.C while the growing rate of said silicon carbide single crystal thin film is specified not to exceed 30mum/h so that said 6H type silicon carbide single crystal thin film may hetero-epitaxially be grown on the 4H type silicon carbide single crystal substrate.

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