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    • 41. 发明专利
    • PLASMA DEVICE
    • JPH11297495A
    • 1999-10-29
    • JP9798098
    • 1998-04-09
    • OMI TADAHIROULTLA CLEAN TECHNOLOGY KAIHATS
    • OMI TADAHIROHIRAYAMA MASAKINITTA TAKEHISA
    • H05H1/46H01L21/205H01L21/302H01L21/3065
    • PROBLEM TO BE SOLVED: To maintain high plasma density, even if a processing object is diametrically enlarged by directly connecting an electrode to an electric power supply means by a conductor, without arranging a matching circuit constituting a distributed constant line and a matching box between the electrode and the electric power supply means in the matching circuit. SOLUTION: A plasma device is constituted by directly connecting an electrode 107 and an electric power supply means 101 by a conductor 105 to reduce power loss supplied to the electrode from the electric power supply means, except for a matching circuit constituting a distributed constant line and a matching box almost decided in characteristic impedance. The output of the electric power supply means 101 is connected directly to the electrode 107 via the conductor 105 so that a processing object 108 is arranged on the electrode 107. A multistage high frequency amplifier 103 uses an electric circuit constituted of plural bipolar transistors, an inductor, a capacitor and a DC power source, and the matching circuit 104 does not use a semi-fixed variable capacitor but rather uses a variable capacitor.
    • 47. 发明专利
    • SEMICONDUCTOR ARITHMETIC CIRCUIT
    • JPH10257352A
    • 1998-09-25
    • JP8187697
    • 1997-03-15
    • SHIBATA SUNAOOMI TADAHIRO
    • SHIBATA SUNAOOMI TADAHIRO
    • H04N5/14H04N5/208H04N5/21
    • PROBLEM TO BE SOLVED: To enable noise removal, edge enhancement processing and edge detection processing by means of the averaging processing of an image in a simple circuit by adding a first, a second and a third signal voltages to the input terminal of an amplifier circuit by means of a specified procedure. SOLUTION: An N-channel MOS transistor 101 and a P-channel MOS transistor 102 constitute a push-pull amplifier, that is, a CMOS-system source follower circuit 103. An array corresponding to nine pixels is taken out from a two-dimensional photosensor array. A switch 105 is closed, and the pixel value V of a center is inputted to the input terminal 104 of the source follower circuit 103 and peripheral pixel values V1 -V8 are inputted to input gate electrodes 106a-106c. After that, the switch 105 is opened. Then, all the same prescribed values are inputted to the electrode 106. The voltage appears in an output terminal 107 becomes larger, when the pixel value of the center is larger than the peripheral ones and becomes smaller, when it is smaller so as to enhance an edge.