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41. 发明申请

US20110207255A1 Semiconductor Device and Method for Manufacturing the Same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20110207255A1
公开(公告)日：2011-08-25
申请号：US13099804
申请日：2011-05-03
申请人： Masayuki Sakakura , Takeshi Noda , Hideaki Kuwabara , Shunpei Yamazaki
发明人： Masayuki Sakakura , Takeshi Noda , Hideaki Kuwabara , Shunpei Yamazaki
IPC分类号： H01L33/02
CPC分类号： H01L27/3244 , H01L27/322 , H01L27/3248 , H01L51/0011 , H01L51/5052 , H01L51/5206 , H01L51/5209 , H01L51/5218 , H01L51/56 , H01L2251/5315
摘要： A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode.
摘要翻译：将提供一种有源矩阵发光器件的制造方法，其中有源矩阵发光器件可以在较短的时间内以较低的成本与常规的低成本制造。本发明的特征在于，与配置在有源矩阵型发光元件的像素区域中的每个TFT的半导体层接触或电连接的金属电极采用分层结构。此外，金属电极被部分蚀刻并用作发光元件的第一电极。缓冲层，含有有机化合物的层和第二电极层层叠在第一电极上。

42. 发明授权

US07663305B2 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07663305B2
公开(公告)日：2010-02-16
申请号：US10602980
申请日：2003-06-24
申请人： Shunpei Yamazaki , Takeshi Noda
发明人： Shunpei Yamazaki , Takeshi Noda
IPC分类号： H01J1/62
CPC分类号： H01L27/3246 , H01L27/3272 , H01L51/0005 , H01L51/5218 , H01L51/5228 , H01L51/5253 , H01L51/5284
摘要： In a top emission structure, there has been a problem in that a wiring, a TFT, or the like is provided in regions other than a light emitting region so that light reflected by the wiring reaches eyes of an observer. The present invention prevents light that is reflected by a wire from reaching eyes of an observer by providing a light-absorbing multilayer film (61) in regions other than a light emitting region. Specifically, the light-absorbing multilayer film (61) is used as an upper layer of a partition wall (also called as a bank or a barrier) that covers ends of a first electrode (66b) whereas an organic resin film (67) is used as a lower layer of the partition wall. The partition wall in the present invention is characterized by being a laminate of three or more layers formed of different materials.
摘要翻译：在顶部发光结构中，存在在发光区域以外的区域中设置布线，TFT等的问题，使得由布线反射的光到达观察者的眼睛。本发明通过在除了发光区域之外的区域中设置吸光多层膜（61）来防止被电线反射的光到达观察者的眼睛。具体而言，吸光性多层膜（61）用作覆盖第一电极（66b）的端部的分隔壁（也称为隔堤或隔壁）的上层，有机树脂膜（67）为用作分隔壁的下层。本发明的分隔壁的特征在于由不同材料形成的3层以上的层叠体。

43. 发明申请

US20090134399A1 Semiconductor Device and Method for Manufacturing the Same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20090134399A1
公开(公告)日：2009-05-28
申请号：US12331679
申请日：2008-12-10
申请人： Masayuki Sakakura , Takeshi Noda , Hideaki Kuwabara , Shunpei Yamazaki
发明人： Masayuki Sakakura , Takeshi Noda , Hideaki Kuwabara , Shunpei Yamazaki
IPC分类号： H01L33/00 , H01J1/62
CPC分类号： H01L27/3244 , H01L27/322 , H01L27/3248 , H01L51/0011 , H01L51/5052 , H01L51/5206 , H01L51/5209 , H01L51/5218 , H01L51/56 , H01L2251/5315
摘要： A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode.
摘要翻译：将提供一种有源矩阵发光器件的制造方法，其中有源矩阵发光器件可以在较短的时间内以较低的成本与常规的低成本制造。本发明的特征在于，与配置在有源矩阵型发光元件的像素区域中的每个TFT的半导体层接触或电连接的金属电极采用分层结构。此外，金属电极被部分蚀刻并用作发光元件的第一电极。缓冲层，含有有机化合物的层和第二电极层层叠在第一电极上。

44. 发明申请

US20090072695A1 IMAGE DISPLAY DEVICE 审中-公开
标题翻译：图像显示设备
公开(公告)号：US20090072695A1
公开(公告)日：2009-03-19
申请号：US12281717
申请日：2007-05-25
申请人： Taro Hiroike , Akira Hayama , Takeshi Noda , Hideaki Mitsutake
发明人： Taro Hiroike , Akira Hayama , Takeshi Noda , Hideaki Mitsutake
IPC分类号： H01J1/88
CPC分类号： H01J29/028 , H01J29/864 , H01J31/127 , H01J2329/863 , H01J2329/8635 , H01J2329/864 , H01J2329/8645 , H01J2329/866
摘要： This is to provide an image display device using a spacer 103 which can reduce an influence which charge has on an electron orbit greatly without depending on electroconductivity of the spacer 103 itself, and a characteristic of a material by making effectual charge amount zero by controlling positive and negative charge distributions generated on a surface of the spacer 103. This is an image display device using a spacer 103 on a main surface of which concavo-convex structure 106 is formed, the spacer 103 having the concavo-convex structure 106 which can cancel mutually positive charge in a convex portion of the concavo-convex structure 106, and negative charge in a concave portion.
摘要翻译：这是为了提供使用间隔物103的图像显示装置，其可以在不依赖于间隔物103本身的导电性的情况下大大降低电荷对电子轨道的影响，并且通过控制正的方式使有效的电荷量为零，从而使材料的特性以及在间隔件103的表面上产生的负电荷分布。这是在形成有凹凸结构106的主表面上使用间隔件103的图像显示装置，具有可以取消的凹凸结构106的间隔件103 凹凸结构106的凸部中的相互正电荷，凹部的负电荷。

45. 发明授权

US07446742B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US07446742B2
公开(公告)日：2008-11-04
申请号：US11041264
申请日：2005-01-25
申请人： Takeshi Noda , Ryota Fukumoto
发明人： Takeshi Noda , Ryota Fukumoto
IPC分类号： G09G3/30
CPC分类号： G09G3/3233 , G09G3/3291 , G09G2300/0465 , G09G2300/0842 , G09G2300/0861 , G09G2310/0251 , G09G2310/0256 , G09G2320/0295 , G09G2320/043 , H01L27/1296 , H01L27/3262 , H01L27/3276
摘要： A light emitting device is provided where an area occupied by capacitors is decreased, luminance variations of light emitting elements caused by characteristics variations or fluctuations of the gate voltage Vgs of driving TFTs can be suppressed. Each of multiple pixels includes a light emitting element, a first transistor for determining a current value supplied thereto, a second transistor for selecting emission/non-emission thereof according to video signals, a first power supply line, and a second power supply line shared by the multiple pixels. In addition, a compensation circuit is provided each of which includes a third transistor whose gate and drain are connected to the second power supply line, and a fourth transistor for controlling the connection between a third power supply line and the gate and drain of the third transistor. The first and second transistors are connected in series between the light emitting element and the first power supply line, and the gate of the first transistor is connected to the second power supply line.
摘要翻译：提供了一种发光器件，其中由电容器占据的面积减小，可以抑制由驱动TFT的栅极电压Vgs的特性变化或波动引起的发光元件的亮度变化。多个像素中的每一个包括发光元件，用于确定提供给其的电流值的第一晶体管，用于根据视频信号选择发光/不发光的第二晶体管，第一电源线和第二电源线共享由多个像素。此外，提供了一种补偿电路，每个补偿电路包括栅极和漏极连接到第二电源线的第三晶体管，以及用于控制第三电源线与第三电源线的栅极和漏极之间的连接的第四晶体管晶体管。第一和第二晶体管串联在发光元件和第一电源线之间，第一晶体管的栅极连接到第二电源线。

46. 发明申请

US20080176351A1 MANUFACTURING METHOD OF DISPLAY DEVICE 审中-公开
标题翻译：显示装置的制造方法
公开(公告)号：US20080176351A1
公开(公告)日：2008-07-24
申请号：US11843693
申请日：2007-08-23
申请人： Hideaki Shimmoto , Takahiro Kamo , Takeshi Noda , Takuo Kaitoh , Eiji Oue
发明人： Hideaki Shimmoto , Takahiro Kamo , Takeshi Noda , Takuo Kaitoh , Eiji Oue
IPC分类号： H01L21/00
CPC分类号： H01L21/02678 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L27/1285 , H01L29/04
摘要： The present invention provides a manufacturing method of a display device which can prevent the reduction of a size of a pseudo single-crystalline region having strip-like crystals in forming such a pseudo single-crystalline silicon region on a substrate. A step for forming pseudo single crystals having strip-like crystals on a preset region of a semiconductor film formed on a substrate includes a step for forming the pseudo single crystal by radiating an energy beam to a first region of the semiconductor film while moving a radiation position of the energy beam in a first direction, and a step for forming the pseudo single crystal by radiating the energy beam to a second region of the semiconductor film while moving a radiation position of the energy beam in a second direction opposite to the first direction. The first region and the second region set sizes thereof at a position where the radiation of the energy beam is finished smaller than sizes thereof at a position where the radiation of the energy beam is started. The second region includes a portion where the second region overlaps the first region and a portion where the second region does not overlap the first region.
摘要翻译：本发明提供一种显示装置的制造方法，其可以防止在基板上形成这样的假单晶硅区域时具有带状晶体的伪单晶区域的尺寸的减小。在形成在衬底上的半导体膜的预设区域上形成具有带状晶体的伪单晶的步骤包括：通过在移动辐射的同时将能量束照射到半导体膜的第一区域来形成伪单晶的步骤能量束在第一方向的位置，以及通过在与第一方向相反的第二方向移动能量束的辐射位置的同时将能量束照射到半导体膜的第二区域来形成伪单晶的步骤。第一区域和第二区域在能量束的辐射被完成的位置处的尺寸设定为小于能量束的辐射开始的位置处的尺寸。第二区域包括第二区域与第一区域重叠的部分和第二区域与第一区域不重叠的部分。

47. 发明申请

US20070257756A1 Electromagnetic Actuator 失效
标题翻译：电磁执行器
公开(公告)号：US20070257756A1
公开(公告)日：2007-11-08
申请号：US11661606
申请日：2005-09-07
申请人： Yasuhiro Matsumoto , Nobutaka Kubota , Takeshi Noda , Kazuhiro Matsuo , Kenji Kato , Mitsutaka Homma , Takao Wakabayashi
发明人： Yasuhiro Matsumoto , Nobutaka Kubota , Takeshi Noda , Kazuhiro Matsuo , Kenji Kato , Mitsutaka Homma , Takao Wakabayashi
IPC分类号： H01F7/122
CPC分类号： H01F7/1615 , H01F7/081 , H01F2007/1692
摘要： A highly efficient electromagnetic actuator which can reduce leakage of the magnetic flux is provided. The electromagnetic actuator comprises a first coil 31, a movable body 2 adapted to move on the central axis of the first coil 31, a first stator 11 covering the top face, bottom face and outer peripheral face of the first coil 31, and a permanent magnet 15 adapted to firmly latch the movable body 2 at one end point of its movable range. A second stator 12 adapted to control the magnetic flux generated from the permanent magnet 15 is provided in succession with the first stator 11. By providing the second stator 12, when releasing the movable body 2 from its firmly latched state, the permanent magnet 15 is not inversely excited or demagnetized.
摘要翻译：提供了一种可以减少磁通泄漏的高效电磁致动器。电磁致动器包括第一线圈31，适于在第一线圈31的中心轴线上移动的可移动体2，覆盖第一线圈31的顶面，底面和外周面的第一定子11和永久磁体15适于在可移动范围的一个端点处牢固地将可移动体2锁定。适于控制从永磁体15产生的磁通量的第二定子12与第一定子11连续地设置。通过设置第二定子12，当将可动体2从其牢固的锁定状态释放时，永磁体15是没有反向激发或退磁。

48. 发明申请

US20070034874A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070034874A1
公开(公告)日：2007-02-15
申请号：US11584524
申请日：2006-10-23
申请人： Tatsuya Arao , Takeshi Noda , Takuya Matsuo , Hidehito Kitakado , Masanori Kyoho
发明人： Tatsuya Arao , Takeshi Noda , Takuya Matsuo , Hidehito Kitakado , Masanori Kyoho
IPC分类号： H01L29/04 , H01L21/84
CPC分类号： H01L27/124 , H01L27/1214 , H01L27/1259 , H01L29/6675 , H01L29/78621 , H01L29/78648
摘要： A semiconductor device that can be manufactured with a reduced cost by decreasing the number of masks is disclosed, and a method for manufacturing the semiconductor device is disclosed. The method for manufacturing the semiconductor device comprises the steps of: forming a semiconductor layer 3 having a source and a drain regions 10, 11, and LDD regions 16, 17; a gate insulating film 5; and a gate electrode 6; forming a first and a second interlayer insulating films 24, 25 over the gate electrode 6 and the gate insulating film 5; forming contact holes 25a, 25c to these interlayer insulating films so as to be located over each of the source region and the drain region; and an opening portion 25b to these interlayer insulating films so as to be located over the gate electrode and the LDD region; forming a second gate electrode 26b by a conductive film in the opening portion so as to cover the gate electrode and the LDD region; and a pixel electrode 26a over the second interlayer insulating film; removing the gate insulating film in the contact hole; and forming wirings 27, 28 connected to each the source region and the drain region.
摘要翻译：公开了可以通过减少掩模数而降低成本的半导体器件，并且公开了一种用于制造半导体器件的方法。制造半导体器件的方法包括以下步骤：形成具有源极和漏极区域10,11以及LDD区域16,17的半导体层3; 栅极绝缘膜5; 和栅电极6; 在栅极电极6和栅极绝缘膜5上形成第一和第二层间绝缘膜24,25; 向这些层间绝缘膜形成接触孔25a，25c，以便位于源极区域和漏极区域之上; 和这些层间绝缘膜的开口部分25b，以便位于栅电极和LDD区之上; 通过开口部中的导电膜形成第二栅电极26b，以覆盖栅电极和LDD区; 以及在第二层间绝缘膜上的像素电极26a; 去除接触孔中的栅极绝缘膜; 以及形成连接到每个源极区域和漏极区域的布线27,28。

49. 发明申请

US20060232203A1 Light emitting device 有权
公开(公告)号：US20060232203A1
公开(公告)日：2006-10-19
申请号：US11386187
申请日：2006-03-22
申请人： Takeshi Noda
发明人： Takeshi Noda
IPC分类号： H01J1/62
CPC分类号： H01L33/26 , H01L51/5048 , H01L51/5203 , H01L51/5209 , H05B33/24
摘要： It is an object of the present invention to provide a light-emitting device in which, even when a material with high reflectivity such as aluminum is used for an electrode, a layer containing oxygen can be formed over the electrode without increasing contact resistance and a manufacturing method thereof. According to the present invention, a feature thereof is a light-emitting element having an electrode composed of a stacked structure where a conductive film having high reflectivity such as aluminum, silver, and an alloy containing aluminum or an alloy containing silver, and a conductive film composed of a refractory metal material is provided over the conductive film, or a light-emitting device having the light-emitting element.

50. 发明申请

US20060163597A1 Light emitting device and method for manufacturing the same 有权
公开(公告)号：US20060163597A1
公开(公告)日：2006-07-27
申请号：US11318783
申请日：2005-12-27
申请人： Takeshi Noda , Masayuki Sakakura , Yasuyuki Arai , Yuko Tachimura
发明人： Takeshi Noda , Masayuki Sakakura , Yasuyuki Arai , Yuko Tachimura
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/58 , H01L27/322 , H01L27/3244 , H01L33/44 , H01L33/60 , H01L51/5281 , H01L2251/558
摘要： It is an object of the present invention to provide a high-contrast light-emitting device without using a polarization plate. In particular, it is an object of the present invention to make contrast control simpler for a light-emitting device provided with a color filter. A light-emitting device according to the present invention has a feature of having a structure for reducing reflection of light from a light-emitting later at a reflective electrode, and further, has a feature of absorbing wavelengths other than the light by a color filter to enhance the contrast. Accordingly, contrast control can be performed in consideration of only a luminescence component from the light-emitting layer, and is thus made simpler.

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