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41. 发明授权

US06844607B2 Photodiode array device, a photodiode module, and a structure for connecting the photodiode module and an optical connector 有权
标题翻译：光电二极管阵列器件，光电二极管模块和用于连接光电二极管模块和光学连接器的结构
公开(公告)号：US06844607B2
公开(公告)日：2005-01-18
申请号：US10068423
申请日：2002-02-04
申请人： Takehiro Shirai , Masayuki Iwase , Takeshi Higuchi , Naoki Tsukiji
发明人： Takehiro Shirai , Masayuki Iwase , Takeshi Higuchi , Naoki Tsukiji
IPC分类号： G02B6/42 , H01L29/72
CPC分类号： G02B6/4249 , G02B6/421 , G02B6/4231 , G02B6/4246
摘要： A photodiode array device having an absorption layer and a cladding layer formed on one surface of a single substrate, anodes formed on the cladding layer, a cathode formed on the other surface of the substrate, and a plurality of light-receiving regions; a photodiode module including the photodiode array device; and a structure for connecting the photodiode module and an optical connector. The photodiode array device has trenches formed on the one surface of the substrate and having such a depth as to divide the absorption layer into subdivisions, for cutting off propagation of light between adjacent light-receiving regions.
摘要翻译：具有形成在单个基板的一个表面上的吸收层和包层的光电二极管阵列器件，形成在包层上的阳极，形成在基板的另一个表面上的阴极和多个光接收区域; 包括光电二极管阵列器件的光电二极管模块; 以及用于连接光电二极管模块和光连接器的结构。光电二极管阵列器件具有形成在衬底的一个表面上的沟槽，并且具有将吸收层分成细分的深度，以便切断相邻的光接收区域之间的光的传播。

42. 发明授权

US06637948B2 Receptacle module 失效
标题翻译：插座模块
公开(公告)号：US06637948B2
公开(公告)日：2003-10-28
申请号：US09828614
申请日：2001-04-06
申请人： Takehiro Shirai , Masayuki Iwase
发明人： Takehiro Shirai , Masayuki Iwase
IPC分类号： G02B636
CPC分类号： G02B6/4292 , G02B6/3821 , G02B6/3893 , G02B6/421
摘要： A receptacle module capable of suppressing deterioration of characteristics of optical signals transmitted in optical fiber cables even when an external force is applied in a direction orthogonal to a longitudinal direction in a state where an optical fiber connector is attached in a receptacle. The reception module is provided with a receptacle having a first sleeve for holding in a detachable manner an optical fiber connector provided at end of an optical fiber cable, a second sleeve, and a window communicating the first and second sleeves and with an optical module held and fixed in the second sleeve. A projection of the optical module passes over the window to be positioned in the first sleeve and moves a ferrule a bit to press a spring when the connector is inserted in the first sleeve. The ferrule is moved to the right against the pushing force of the spring 21a. The abutting force increases the connection load between the optical fiber cables.
摘要翻译：即使在将光纤连接器安装在插座中的状态下，即使在与长度方向正交的方向上施加外力的情况下，也能够抑制在光纤电缆中传输的光信号的特性劣化的插座模块。接收模块设置有具有第一套筒的容器，该第一套筒以可拆卸的方式保持设置在光纤电缆端的光纤连接器，第二套筒和连通第一和第二套筒的窗口以及与保持的光学模块并固定在第二套筒中。光学模块的突出部通过窗口以定位在第一套筒中，并且当连接器插入第一套筒中时，将套圈移动一点以按压弹簧。套圈相对于弹簧21a的推力向右移动。抵接力增加了光纤电缆之间的连接负载。

43. 发明授权

US06435728B1 OPTICAL CONNECTOR HOUSING, OPTICAL CONNECTOR USING THE OPTICAL CONNECTOR HOUSING, AND CONNECTION STRUCTURE BETWEEN AN OPTICAL CONNECTOR USING THE SAME OPTICAL CONNECTOR HOUSING AND AN OPTICAL COMPONENT 有权
公开(公告)号：US06435728B1
公开(公告)日：2002-08-20
申请号：US09883314
申请日：2001-06-19
申请人： Naoko Shimoji , Jun Yamakawa , Masayuki Iwase
发明人： Naoko Shimoji , Jun Yamakawa , Masayuki Iwase
IPC分类号： G02B638
摘要： An optical connector housing having arm portions extending from both end sides of the face of the base end side. A space placed between the arm portions is constituted as ferrule accommodation space. An engaging portion which is engaged in an object to be connected is formed at the tip end side of the respective arm portions. A surface of an angle widening drive cam, which widens the arm portions when the ferrule is drawn to the face of the base end side, protrudes from and is formed on the inner wall of the arm portions extending from the position of the rear end face of the ferrule accommodated in the accommodation space to the base end side of the optical connector housing.

44. 发明授权

US5214662A Semiconductor optical devices with pn current blocking layers of wide-band gap materials 失效
标题翻译：半导体光电器件，带宽带隙材料的PN电流阻挡层
公开(公告)号：US5214662A
公开(公告)日：1993-05-25
申请号：US791767
申请日：1991-11-15
申请人： Michinori Irikawa , Masayuki Iwase
发明人： Michinori Irikawa , Masayuki Iwase
IPC分类号： H01S5/00 , H01S5/227
CPC分类号： H01S5/227 , H01S5/2275
摘要： A semiconductor optical device comprising a mesa shaped double heterostructure having an active layer on an InP substrate, and pn junction current blocking layers embedded at all sides of the said double heterostructure, wherein at least portion of said current blocking layers consists of a semiconductor layer lattice-matched to InP and having a band gap larger than that of the InP at a room temperature. Therefore, the current blocking characteristics of the current blocking layer is improved so that the increase of leakage current under operating condition of high temperature and high output power is well suppressed, and the nonlinearity in the optical output-current characteristic is drastically reduced even under such operating conditions.

45. 发明授权

US5173912A Double-carrier confinement laser diode with quantum well active and SCH structures 失效
标题翻译：双载波约束激光二极管与量子有源和串联结构
公开(公告)号：US5173912A
公开(公告)日：1992-12-22
申请号：US677733
申请日：1991-04-02
申请人： Masayuki Iwase , Michinori Irikawa , Randit S. Mand
发明人： Masayuki Iwase , Michinori Irikawa , Randit S. Mand
IPC分类号： H01S5/00 , H01S5/343 , H01S5/40
CPC分类号： B82Y20/00 , H01S5/34313 , H01S5/3434 , H01S5/4043 , H01S5/34306
摘要： A semiconductor laser diode of pn double hetero junction type which comprises a first active layer formed on a substrate for imparting a main oscillation, a second active layer adjacent to the first active layer in such a manner that at least one of the first and second active layers is formed of a multi quantum well or single quantum well structure, an intermediate clay layer interposed between the first active layer and the second active layer for preventing duplication of wave function of confined electrons of the respective active layers, and a graded refractive index distribution region (GRIN-SCH structure layer) provided on at least one of under the first active layer and over second active layer to reduce the refractive index thereof remotely from the active layers. Thus, the semiconductor laser diode can have high characteristic temperature and lower a threshold current at the time of laser oscillation and obtain preferable operation characteristics even under severe environments of temperature condition.

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