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41. 发明授权

US07061113B2 Semiconductor apparatus, led head, and image forming apparatus 有权
标题翻译：半导体装置，LED头和图像形成装置
公开(公告)号：US07061113B2
公开(公告)日：2006-06-13
申请号：US10926890
申请日：2004-08-26
申请人： Hiroyuki Fujiwara , Mitsuhiko Ogihara
发明人： Hiroyuki Fujiwara , Mitsuhiko Ogihara
IPC分类号： H01L23/48
CPC分类号： B41J2/45 , H01L25/0753 , H01L27/153 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor apparatus has a substrate to which is attached a thin semiconductor film including at least one semiconductor device. A first interconnecting line formed on the thin semiconductor film makes electrical contact with the semiconductor device. A second interconnecting line extends from the thin semiconductor film to the substrate, electrically coupling the first interconnecting line to an interconnection pattern on the substrate. At the point where the first and second interconnecting lines meet, one of the two interconnecting lines is widened to provide an increased positioning margin, thereby relaxing the requirement for precise positioning of the thin semiconductor film. The thin semiconductor film may include an array of light-emitting diodes and the substrate may include driving circuitry for driving them.
摘要翻译：半导体装置具有附着有包括至少一个半导体器件的薄半导体膜的衬底。形成在薄半导体膜上的第一互连线与半导体器件电接触。第二互连线从薄半导体膜延伸到衬底，将第一互连线电连接到衬底上的互连图案。在第一和第二互连线相交的点处，两个互连线中的一个被加宽以提供增加的定位裕度，从而放松对薄半导体膜的精确定位的要求。薄半导体膜可以包括发光二极管的阵列，并且衬底可以包括用于驱动它们的驱动电路。

42. 发明授权

US06913985B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06913985B2
公开(公告)日：2005-07-05
申请号：US10870142
申请日：2004-06-18
申请人： Mitsuhiko Ogihara , Hiroyuki Fujiwara , Masaaki Sakuta , Ichimatsu Abiko
发明人： Mitsuhiko Ogihara , Hiroyuki Fujiwara , Masaaki Sakuta , Ichimatsu Abiko
IPC分类号： H01L21/20 , H01L33/00 , H01L21/46
CPC分类号： H01L21/2007 , H01L33/0079 , H01L2221/68368 , H01L2924/0002 , Y10S438/977 , H01L2924/00
摘要： A peeling layer (13) and semiconductor thin film (20a) are formed on a first substrate (11), individual support materials (19) are formed thereupon, grooves (23) penetrating the semiconductor thin film and reaching the peeling layer (13) are formed in the semiconductor thin film (20a) by etching using the individual support materials (19) as a mask so as to divide the semiconductor thin film (20a) into a plurality of semiconductor thin film pieces (20) and form a plurality of assemblies of the semiconductor thin film pieces (20) and the individual support materials (19) fixed thereto, the semiconductor thin film pieces (20) are separated from the first substrate (11) while the individual support materials (19) remain fixed to the semiconductor thin film pieces (20), and they are then affixed to a second substrate (31). The invention facilitates handling of semiconductor thin film pieces.
摘要翻译：在第一基板（11）上形成有剥离层（13）和半导体薄膜（20a），在其上形成有单独的支撑材料（19），穿过半导体薄膜并到达剥离层（13）的凹槽）通过使用各个支撑材料（19）作为掩模的蚀刻形成在半导体薄膜（20a）中，以将半导体薄膜（20a）分成多个半导体薄膜片（20）并形成半导体薄膜片（20）和固定于其上的各个支撑材料（19）的多个组件，半导体薄膜片（20）与第一衬底（11）分离，同时保持各个支撑材料（19）固定到半导体薄膜片（20）上，然后将它们固定到第二衬底（31）上。本发明有利于半导体薄膜片的处理。

43. 发明授权

US09093562B2 Semiconductor composite apparatus, method for manufacturing the semiconductor composite apparatus, LED head that employs the semiconductor composite apparatus, and image forming apparatus that employs the LED head 有权
标题翻译：半导体复合装置，半导体复合装置的制造方法，使用该半导体复合装置的LED头，以及使用该LED头的图像形成装置
公开(公告)号：US09093562B2
公开(公告)日：2015-07-28
申请号：US12926743
申请日：2010-12-07
申请人： Mitsuhiko Ogihara , Hiroyuki Fujiwara , Takahito Suzuki , Masaaki Sakuta , Ichimatsu Abiko
发明人： Mitsuhiko Ogihara , Hiroyuki Fujiwara , Takahito Suzuki , Masaaki Sakuta , Ichimatsu Abiko
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L23/00 , B41J2/45 , H01L27/15
CPC分类号： H01L24/83 , B41J2/45 , H01L24/29 , H01L24/32 , H01L27/153 , H01L2224/27444 , H01L2224/2747 , H01L2224/2908 , H01L2224/29082 , H01L2224/291 , H01L2224/29109 , H01L2224/29111 , H01L2224/29113 , H01L2224/29114 , H01L2224/29117 , H01L2224/29139 , H01L2224/29144 , H01L2224/29155 , H01L2224/29164 , H01L2224/32502 , H01L2224/83005 , H01L2224/83011 , H01L2224/83013 , H01L2224/83192 , H01L2224/83203 , H01L2224/8382 , H01L2224/83825 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01024 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01058 , H01L2924/01072 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/07802 , H01L2924/10253 , H01L2924/10329 , H01L2924/10336 , H01L2924/10349 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/157 , H01L2924/15787 , H01L2924/15788 , H01L2924/1579 , H01L2924/00014 , H01L2924/01007 , H01L2924/00
摘要： A semiconductor composite apparatus includes a semiconductor thin film layer and a substrate. The semiconductor thin film layer and the substrate are bonded to each other with a layer of an alloy of a high-melting-point metal and a low-melting-point metal formed between the semiconductor thin film layer and the substrate. The alloy has a higher melting point than the low-melting-point metal. The layer of the alloy contains a product resulting from a reaction of the low-melting-point metal and a material of said semiconductor thin film layer.
摘要翻译：半导体复合装置包括半导体薄膜层和基板。半导体薄膜层和基板通过形成在半导体薄膜层和基板之间的高熔点金属和低熔点金属的合金层彼此接合。该合金的熔点高于低熔点金属。该合金层含有由低熔点金属与所述半导体薄膜层的材料反应产生的产物。

44. 发明授权

US08022418B2 Composite semiconductor device, LED print head that employs the composite semiconductor device, and image forming apparatus that employs the LED print head 有权
标题翻译：复合半导体器件，采用复合半导体器件的LED打印头以及采用该LED打印头的图像形成装置
公开(公告)号：US08022418B2
公开(公告)日：2011-09-20
申请号：US11737153
申请日：2007-04-19
申请人： Tomohiko Sagimori , Hiroyuki Fujiwara , Mitsuhiko Ogihara , Takahito Suzuki
发明人： Tomohiko Sagimori , Hiroyuki Fujiwara , Mitsuhiko Ogihara , Takahito Suzuki
IPC分类号： H01L33/38
CPC分类号： B41J2/45 , H01L25/0753 , H01L2924/0002 , H01L2924/00
摘要： A composite semiconductor device includes a plurality of semiconductor thin films and a substrate on which the semiconductor thin films are attached. Each semiconductor thin film includes a plurality of semiconductor elements. Each semiconductor element includes a first contact region and a second contact region. The first contact region is connected to a first electrode, and the second contact region is connected to a second electrode. The semiconductor thin film is attached to a substrate such that the plurality of semiconductor elements are aligned in a row, and such that the first contact region and the second contact region are in the row of light emitting elements.
摘要翻译：复合半导体器件包括多个半导体薄膜和其上附着半导体薄膜的衬底。每个半导体薄膜包括多个半导体元件。每个半导体元件包括第一接触区域和第二接触区域。第一接触区域连接到第一电极，并且第二接触区域连接到第二电极。将半导体薄膜附着到基板上，使得多个半导体元件排成一行，并且使得第一接触区域和第二接触区域处于一行发光元件中。

45. 发明申请

US20070114556A1 Semiconductor apparatus with thin semiconductor film 审中-公开
标题翻译：具有薄半导体膜的半导体器件
公开(公告)号：US20070114556A1
公开(公告)日：2007-05-24
申请号：US11651586
申请日：2007-01-10
申请人： Mitsuhiko Ogihara , Hiroyuki Fujiwara , Masaaki Sakuta , Ichimatsu Abiko
发明人： Mitsuhiko Ogihara , Hiroyuki Fujiwara , Masaaki Sakuta , Ichimatsu Abiko
IPC分类号： H01L33/00
CPC分类号： G03G15/043 , B41J2/45 , H01L27/153 , H01L33/62 , H01L2224/48137
摘要： A semiconductor apparatus includes a substrate having at least one terminal, a thin semiconductor film including at least one semiconductor device, the thin semiconductor film being disposed and bonded on the substrate; and an individual interconnecting line formed as a thin conductive film extending from the semiconductor device in the thin semiconductor film to the terminal in the substrate, electrically connecting the semiconductor device to the terminal. Compared with conventional semiconductor apparatus, the invented apparatus is smaller and has a reduced material cost.
摘要翻译：半导体装置包括具有至少一个端子的基板，包括至少一个半导体器件的薄半导体膜，所述薄半导体膜设置并接合在所述基板上; 以及形成为从薄半导体膜中的半导体器件延伸到衬底中的端子的薄导电膜的单独互连线，将半导体器件电连接到端子。与传统的半导体装置相比，本发明的装置更小，材料成本降低。

46. 发明授权

US07122834B2 Semiconductor apparatus having adhesion layer and semiconductor thin film 有权
标题翻译：具有粘附层和半导体薄膜的半导体装置
公开(公告)号：US07122834B2
公开(公告)日：2006-10-17
申请号：US10734676
申请日：2003-12-15
申请人： Mitsuhiko Ogihara , Hiroyuki Fujiwara , Masaaki Sakuta , Ichimatsu Abiko
发明人： Mitsuhiko Ogihara , Hiroyuki Fujiwara , Masaaki Sakuta , Ichimatsu Abiko
IPC分类号： H01L33/00
CPC分类号： B41J2/45 , H01L27/153 , H01L2224/48091 , H01L2224/48137 , H01L2924/00014
摘要： A semiconductor apparatus includes a substrate; an adhesion layer disposed on the substrate, the adhesion layer mainly consisting of semiconductor material; and at least one semiconductor thin film including at least one semiconductor device and bonded on the adhesion layer. The adhesion layer may be a polycrystalline silicon layer or an amorphous silicon layer.
摘要翻译：一种半导体装置，包括：基板; 设置在基板上的粘合层，主要由半导体材料构成的粘合层; 以及至少一个半导体薄膜，其包括至少一个半导体器件并结合在粘合层上。粘合层可以是多晶硅层或非晶硅层。

47. 发明申请

US20050087743A1 Semiconductor device, LED print head and image-forming apparatus using same, and method of manufacturing semiconductor device 有权
标题翻译：半导体装置，LED打印头和使用其的图像形成装置以及半导体装置的制造方法
公开(公告)号：US20050087743A1
公开(公告)日：2005-04-28
申请号：US10970637
申请日：2004-10-21
申请人： Mitsuhiko Ogihara , Hiroyuki Fujiwara , Ichimatsu Abiko , Masaaki Sakuta
发明人： Mitsuhiko Ogihara , Hiroyuki Fujiwara , Ichimatsu Abiko , Masaaki Sakuta
IPC分类号： B41J2/45 , H01L21/48 , H01L21/50 , H01L21/60 , H01L21/98 , H01L25/075 , H01L33/44 , H01L33/48 , H01L33/58 , H01L29/04
CPC分类号： H01L25/0753 , B41J2/45 , H01L21/6835 , H01L33/0079 , H01L2221/68322 , H01L2221/68354 , H01L2221/68368 , H01L2224/48227 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/12041 , H01L2924/14 , H01L2924/3025
摘要： In a method of manufacturing a semiconductor thin film piece device, a plurality of semiconductor thin film pieces (14) are selected from among the semiconductor thin film pieces (14) formed on a first substrate (35), and bonded to a first set of predetermined area on a second substrate (12). Subsequently, a plurality of semiconductor thin film pieces are selected from the remaining semiconductor thin film pieces (14), and bonded to a second set of predetermined area.
摘要翻译：在制造半导体薄膜片器件的方法中，从形成在第一衬底（35）上的半导体薄膜片（14）中选择多个半导体薄膜片（14），并结合到第一组在第二基板（12）上的预定区域。随后，从剩余的半导体薄膜片（14）中选择多个半导体薄膜片，并结合到第二组预定区域。

48. 发明申请

US20050082673A1 Semiconductor apparatus, led head, and image forming apparatus 有权
标题翻译：半导体装置，LED头和图像形成装置
公开(公告)号：US20050082673A1
公开(公告)日：2005-04-21
申请号：US10926890
申请日：2004-08-26
申请人： Hiroyuki Fujiwara , Mitsuhiko Ogihara
发明人： Hiroyuki Fujiwara , Mitsuhiko Ogihara
IPC分类号： B41J2/44 , B41J2/45 , B41J2/455 , H01L23/52 , H01L25/075 , H01L27/15 , H01L33/00 , H01L33/08 , H01L33/14 , H01L33/30 , H01L33/38 , H01L33/40 , H01L33/44 , H01L33/58
CPC分类号： B41J2/45 , H01L25/0753 , H01L27/153 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor apparatus has a substrate to which is attached a thin semiconductor film including at least one semiconductor device. A first interconnecting line formed on the thin semiconductor film makes electrical contact with the semiconductor device. A second interconnecting line extends from the thin semiconductor film to the substrate, electrically coupling the first interconnecting line to an interconnection pattern on the substrate. At the point where the first and second interconnecting lines meet, one of the two interconnecting lines is widened to provide an increased positioning margin, thereby relaxing the requirement for precise positioning of the thin semiconductor film. The thin semiconductor film may include an array of light-emitting diodes and the substrate may include driving circuitry for driving them.
摘要翻译：半导体装置具有附着有包括至少一个半导体器件的薄半导体膜的衬底。形成在薄半导体膜上的第一互连线与半导体器件电接触。第二互连线从薄半导体膜延伸到衬底，将第一互连线电连接到衬底上的互连图案。在第一和第二互连线相交的点处，两个互连线中的一个被加宽以提供增加的定位裕度，从而放松对薄半导体膜的精确定位的要求。薄半导体膜可以包括发光二极管的阵列，并且衬底可以包括用于驱动它们的驱动电路。

49. 发明授权

US5955748A End face light emitting type light emitting diode 失效
标题翻译：端面发光型发光二极管
公开(公告)号：US5955748A
公开(公告)日：1999-09-21
申请号：US942302
申请日：1997-10-01
申请人： Yukio Nakamura , Mitsuhiko Ogihara , Masumi Taninaka , Takao Kusano , Masumi Koizumi , Hiroyuki Fujiwara , Makoto Ishimaru , Masaharu Nobori , Tsutomu Nomoto
发明人： Yukio Nakamura , Mitsuhiko Ogihara , Masumi Taninaka , Takao Kusano , Masumi Koizumi , Hiroyuki Fujiwara , Makoto Ishimaru , Masaharu Nobori , Tsutomu Nomoto
IPC分类号： B41J2/44 , B41J2/45 , B41J2/455 , H01L21/301 , H01L33/00 , H01L33/08 , H01L33/20 , H01L33/30 , H01L33/36 , H01L33/44
CPC分类号： B41J2/45 , H01L33/0008 , H01L33/20 , H01L33/44 , H01L2224/48137 , H01L33/0095
摘要： An end facet light emitting type LED has a slanted light emitting side wall relative to a substrate surface. A method for manufacturing end facet light emitting type light emitting devices prevents the pn-junction regions of the devices from being damaged while a semiconductor wafer is diced to separate light emitting devices from one another. A recess is formed on the semiconductor wafer having a depth which is deeper than the pn-junction. A portion to be cut during dicing of the wafer is vertically and horizontally separated from the pn-junction regions, so that if cracks occur when the wafer is diced, the cracks do not affect the light emitting characteristics of the devices.
摘要翻译：端面发光型LED相对于基板表面具有倾斜的发光侧壁。一种用于制造端面发光型发光器件的方法防止了在将半导体晶片切割以将发光器件彼此分离的同时，器件的pn结区域被损坏。在半导体晶片上形成有比pn结深的深度的凹部。在切割晶片期间待切割的部分与pn结区域垂直和水平分离，使得如果在切割晶片时发生裂纹，则裂纹不会影响器件的发光特性。

50. 发明授权

US07871834B2 Combined semiconductor apparatus with thin semiconductor films 有权
标题翻译：具有薄半导体膜的组合半导体装置
公开(公告)号：US07871834B2
公开(公告)日：2011-01-18
申请号：US12320511
申请日：2009-01-28
申请人： Mitsuhiko Ogihara , Hiroyuki Fujiwara , Ichimatsu Abiko , Masaaki Sakuta
发明人： Mitsuhiko Ogihara , Hiroyuki Fujiwara , Ichimatsu Abiko , Masaaki Sakuta
IPC分类号： H01L21/50
CPC分类号： B41J2/451 , B41J2/45 , H01L27/153 , H01L33/0079 , H01L2224/48091 , H01L2224/48137 , H01L2224/49175 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor apparatus includes two thin semiconductor films bonded to a substrate, and a thin-film interconnecting line electrically connecting a semiconductor device such as a light-emitting device in the first thin semiconductor film to an integrated circuit in the second thin semiconductor film. Typically, the integrated circuit drives the semiconductor device. The two thin semiconductor films are formed separately from the substrate. The first thin semiconductor film may include an array of semiconductor devices. The first and second thin semiconductor films may be replicated as arrays bonded to the same substrate. Compared with conventional semiconductor apparatus comprising an array chip and a separate driver chip, the invented apparatus is smaller and has a reduced material cost.
摘要翻译：半导体装置包括两个结合到基板的薄的半导体膜，以及将第一薄膜半导体膜中的诸如发光器件的半导体器件电连接到第二薄半导体膜中的集成电路的薄膜互连线。通常，集成电路驱动半导体器件。两个薄的半导体膜与衬底分开形成。第一薄膜半导体膜可以包括半导体器件阵列。第一和第二薄的半导体膜可以被复制为与同一衬底结合的阵列。与包括阵列芯片和单独的驱动器芯片的常规半导体装置相比，本发明的装置更小并且材料成本降低。

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