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41. 发明授权

US07130168B2 Synthetic free layer for CPP GMR 失效
标题翻译： CPP GMR的合成自由层
公开(公告)号：US07130168B2
公开(公告)日：2006-10-31
申请号：US11229155
申请日：2005-09-16
申请人： Min Li , Simon Liao , Kochan Ju
发明人： Min Li , Simon Liao , Kochan Ju
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3903 , G11B2005/3996 , H01F10/324 , H01F10/3272 , H01F41/302 , H01L43/10
摘要： Reduction of the free layer thickness in GMR devices is desirable in order to meet higher signal requirements, besides improving the GMR ratio itself. However, thinning of the free layer reduces the GMR ratio and leads to poor thermal stability. This problem has been overcome by making AP2 from an inverse GMR material and by changing the free layer from a single uniform layer to a ferromagnetic layer AFM (antiferromagnetically) coupled to a layer of inverse GMR material. Examples of alloys that may be used for the inverse GMR materials include FeCr, NiFeCr, NiCr, CoCr, CoFeCr, and CoFeV. Additionally, the ruthenium layer normally used to effect antiferromagnetic coupling can be replaced by a layer of chromium. A process to manufacture the structure is also described.
摘要翻译：为了满足更高的信号要求，除了改善GMR比率本身外，希望降低GMR器件中的自由层厚度。然而，自由层的减薄降低了GMR比并导致差的热稳定性。通过从反GMR材料制备AP 2并通过将自由层从单个均匀层改变为耦合到反向GMR材料层的铁磁层AFM（反铁磁性）而已经克服了该问题。可用于逆GMR材料的合金的实例包括FeCr，NiFeCr，NiCr，CoCr，CoFeCr和CoFeV。此外，通常用于实现反铁磁耦合的钌层可以被铬层代替。还描述了制造该结构的方法。

42. 发明授权

US06985337B2 Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads 失效
公开(公告)号：US06985337B2
公开(公告)日：2006-01-10
申请号：US11091281
申请日：2005-03-28
申请人： Bernard Dieny , Cheng Horng , Kochan Ju , Min Li , Simon Liao
发明人： Bernard Dieny , Cheng Horng , Kochan Ju , Min Li , Simon Liao
IPC分类号： G11B5/127
CPC分类号： H01F41/302 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3967 , G11B2005/3996 , H01F10/3259 , H01F10/3272
摘要： Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layers. Said enhanced properties are provided by the insertion of magnetic nano-oxide layers between ferromagnetic layers and non-magnetic spacer layers, whereby said nano-oxide layers increase resistance and exhibit spin filtering properties. CPP sensor stacks of various types are provided, all having nano-oxide layers formed therein, including the spin-valve type and the synthetic antiferromagnetic pinned layer spin-valve type. Said stacks can also be formed upon each other to provide laminated stacks of different types.

43. 发明申请

US20050122638A1 Transverse or longitudinal patterned synthetic exchange biasing for stabilizing GMR sensors 失效
标题翻译：用于稳定GMR传感器的横向或纵向图案合成交换偏置
公开(公告)号：US20050122638A1
公开(公告)日：2005-06-09
申请号：US11036922
申请日：2005-01-14
申请人： Cheng Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Zheng , Simon Liao , Kochan Ju , Cherng Han
发明人： Cheng Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Zheng , Simon Liao , Kochan Ju , Cherng Han
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3143 , G11B5/3163 , G11B5/3932 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.
摘要翻译：提供了图案化，纵向和横向反铁磁交换偏置GMR传感器，其具有窄的有效轨迹宽度和减少的侧读数。交换偏置显着降低了由导电引线下方的铁磁自由层部分产生的信号，同时仍然提供了一个很强的钉扎场，以保持传感器的稳定性。在横向偏置传感器的情况下，自由和偏压层与被钉扎层的方向相同的磁化简化了制造工艺，并且通过消除了电流分流的必要性，可以形成较薄的引线。

44. 发明申请

US20050111148A1 Method of increasing CPP GMR in a spin valve structure 有权
标题翻译：在自旋阀结构中增加CPP GMR的方法
公开(公告)号：US20050111148A1
公开(公告)日：2005-05-26
申请号：US10718373
申请日：2003-11-20
申请人： Min Li , Kochan Ju , Youfeng Zheng , Simon Liao , Jeiwei Chang
发明人： Min Li , Kochan Ju , Youfeng Zheng , Simon Liao , Jeiwei Chang
IPC分类号： G01R33/09 , G11B5/127 , G11B5/17 , G11B5/33 , G11B5/39 , H01F10/16 , H01F10/32 , H01L43/08 , H01L43/12
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B2005/3996
摘要： A current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type is provided, the sensor comprising a GMR stack having a substantially square lateral cross-section, a Cu spacer layer of smaller square cross-section formed centrally on the GMR stack and a capped ferromagnetic free layer of substantially square, but even smaller cross-sectional area, formed centrally on the spacer layer. The stepped, reduced area geometry of the sensor provides a significant improvement in its GMR ratio (DR/R), a reduced resistance, R, and elimination of Joule heating hot-spots in regions of high resistance such as the antiferromagnetic pinning layer and its seed layer.
摘要翻译：提供合成自旋阀类型的电流垂直平面（CPP）巨磁阻（GMR）传感器，该传感器包括具有基本正方形横截面的GMR叠层，较小方形截面的Cu间隔层，在GMR堆叠上形成中心的截面，以及在间隔层中央形成基本上正方形，但是更小的横截面积的封盖铁磁自由层。传感器的阶梯式减小的面积几何形状提供了其GMR比（DR / R），电阻降低，R和消除高电阻区域中的焦耳加热热点的显着改进，例如反铁磁钉扎层及其种子层。

45. 发明申请

US20050094323A1 Integrated spin valve head 失效
标题翻译：集成自旋阀头
公开(公告)号：US20050094323A1
公开(公告)日：2005-05-05
申请号：US11011994
申请日：2004-12-14
申请人： Kochan Ju , Cheng Horng , Youfeng Zheng , Simon Liao , Jei-Wei Chang
发明人： Kochan Ju , Cheng Horng , Youfeng Zheng , Simon Liao , Jei-Wei Chang
IPC分类号： G01R33/09 , B05D7/00 , G11B5/127 , G11B5/187 , G11B5/29 , G11B5/31 , G11B5/33 , G11B5/39 , H01F10/16 , H01F10/30 , H01F10/32 , H01L43/08 , H01L43/12 , H04R31/00
CPC分类号： G11B5/33 , G11B5/29 , G11B5/31 , Y10T29/49037 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： Currently, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by inserting a high permeability, high resistivity, thin film shield on the top or bottom (or both) sides of the spin valve sensor. A permeability greater than about 500 is required together with a resistivity about 5 times greater than that of the free layer and an MrT value for the thin film shield that is 4 times greater than that of the free layer. Five embodiments of the invention are described.
摘要翻译：目前，自旋阀头的屏蔽到屏蔽分离不能低于约800，这主要是由于传感器到引线短路问题。现在已经通过在自旋阀传感器的顶部或底部（或两个）侧上插入高磁导率，高电阻率的薄膜屏蔽来克服这个问题。需要大于约500的磁导率，其电阻率大约为自由层的电阻率的约5倍，薄膜屏蔽层的电阻值大于自由层的4倍层。描述本发明的五个实施例。

46. 发明授权

US06770382B1 GMR configuration with enhanced spin filtering 失效
标题翻译： GMR配置与增强的自旋过滤
公开(公告)号：US06770382B1
公开(公告)日：2004-08-03
申请号：US09443447
申请日：1999-11-22
申请人： Jei-Wei Chang , Bernard Dieny , Mao-Min Chen , Cheng Horng , Kochan Ju , Simon Liao
发明人： Jei-Wei Chang , Bernard Dieny , Mao-Min Chen , Cheng Horng , Kochan Ju , Simon Liao
IPC分类号： G11B5127
CPC分类号： H01F10/30 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3133 , G11B5/3903 , G11B5/3909 , H01F10/3272 , H01L43/08 , Y10T428/1121 , Y10T428/1129 , Y10T428/1157 , Y10T428/1171 , Y10T428/12944 , Y10T428/2495
摘要： A Spin Valve GMR and Spin Filter SVGMR configuration where in the first embodiment an important buffer layer is composed of an metal oxide having a crystal lattice constant that is close the 1st FM free layer's crystal lattice constant and has the same crystal structure (e.g., FCC, BCC, etc.). The metal oxide buffer layer enhances the specular scattering. The spin valve giant magnetoresistance (SVGMR) sensor comprises: a seed layer over the substrate. An important metal oxide buffer layer (buffer layer) over the seed layer. The metal oxide layer preferably is comprised of NiO or alpha-Fe2O3. A free ferromagnetic layer over the metal oxide layer. A non-magnetic conductor spacer layer over the free ferromagnetic layer. A pinned ferromagnetic layer (2nd FM pinned) over the non-magnetic conductor spacer layer and a pinning material layer over the pinned ferromagnetic layer. In the second embodiment, a high conductivity layer (HCL) is formed over the buffer layer to create a spin filter -SVGMR. The HCL layer enhances the GMR ratio of the spin filter SVGMR. The third embodiment is a pinned FM layer comprised of a three layer structure of an lower AP layer, a spacer layer (e.g., Ru) and an upper AP layer.
摘要翻译：自旋阀GMR和自旋滤波器SVGMR配置，其中在第一实施例中，重要的缓冲层由具有接近第1个FM自由层的晶格常数的晶格常数的金属氧化物组成并且具有相同的晶体结构例如FCC，BCC等）。金属氧化物缓冲层增强了镜面散射。自旋阀巨磁阻（SVGMR）传感器包括：衬底上的种子层。种子层上重要的金属氧化物缓冲层（缓冲层）。金属氧化物层优选由NiO或α-Fe2O3组成。在金属氧化物层上的自由铁磁层。在自由铁磁层上的非磁性导体间隔层。在非磁性导体间隔层上方的钉扎铁磁层（第二个FM被钉住）和钉扎铁磁层上的钉扎材料层。在第二实施例中，在缓冲层上形成高电导率层（HCL）以产生自旋滤波器-SVGMR。 HCL层增强了旋转过滤器SVGMR的GMR比。第三实施例是由下AP层，间隔层（例如Ru）和上AP层组成的三层结构的钉扎FM层。

47. 发明授权

US07201947B2 CPP and MTJ reader design with continuous exchange-coupled free layer 失效
标题翻译： CPP和MTJ读卡器设计，具有连续的交换耦合自由层
公开(公告)号：US07201947B2
公开(公告)日：2007-04-10
申请号：US10238269
申请日：2002-09-10
申请人： Simon Liao , Kochan Ju , Youfeng Zheng
发明人： Simon Liao , Kochan Ju , Youfeng Zheng
IPC分类号： B29C35/08
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/313 , G11B5/3163 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , Y10T29/49046
摘要： As track widths of magnetic read heads grow very small, conventional longitudinal bias stabilization has been found to no longer be suitable since the strong magnetostatic coupling at the track edges also pins the magnetization of the free layer. This problem has been overcome by extending the free layer so that it is no longer confined to the area immediately below the spacer or tunneling layer. A longitudinal bias layer immediately below the free layer is given a relatively weak magnetic exchange coupling field of about 200 Oe. Although there is strong exchange coupling between this and the free layer, the degree of pinning of the free layer is low so that the device's output signal is reduced by less than about 10%. A process for manufacturing both the CPP SV and a MTJ versions of the invention is described.
摘要翻译：随着磁读头的轨道宽度增长非常小，传统的纵向偏置稳定性已经被发现不再适用，因为轨道边缘处的强静磁耦合也引导自由层的磁化。已经通过延伸自由层来克服这个问题，使得它不再局限于间隔物或隧道层正下方的区域。在自由层正下方的纵向偏置层被给予约200Oe的相对较弱的磁交换耦合场。尽管在这种自由层之间存在很强的交换耦合，但是自由层的钉扎程度很低，因此器件的输出信号减少了约10％。描述了用于制造本发明的CPP SV和MTJ版本的方法。

48. 发明授权

US07162791B2 Method of manufacturing integrated spin valve head 失效
标题翻译：集成自旋阀头的制造方法
公开(公告)号：US07162791B2
公开(公告)日：2007-01-16
申请号：US11011995
申请日：2004-12-14
申请人： Kochan Ju , Cheng Horng , Youfeng Zheng , Simon Liao , Jei-Wei Chang
发明人： Kochan Ju , Cheng Horng , Youfeng Zheng , Simon Liao , Jei-Wei Chang
IPC分类号： G11B5/127 , G11B5/83 , H04R31/00
CPC分类号： G11B5/33 , G11B5/29 , G11B5/31 , Y10T29/49037 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： Currently, in a process of manufacturing a top spin valve structure, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by inserting a high permeability, high resistivity, thin film shield on the top or bottom (or both) sides of the spin valve sensor. A permeability greater than about 500 is required together with a resistivity about 5 times greater than that of the free layer and an MrT value for the thin film shield that is 4 times greater than that of the free layer.
摘要翻译：目前，在制造顶部自旋阀结构的过程中，自旋阀头的屏蔽与屏蔽间隔不能低于约800，这主要是由于传感器与铅的短路问题。现在已经通过在自旋阀传感器的顶部或底部（或两个）侧上插入高磁导率，高电阻率的薄膜屏蔽来克服这个问题。需要大于约500的磁导率，其电阻率大约为自由层的电阻率的约5倍，薄膜屏蔽层的电阻值大于自由层的4倍层。

49. 发明授权

US07060321B2 Process for manufacturing a top spin valve 失效
标题翻译：制造顶部自旋阀的方法
公开(公告)号：US07060321B2
公开(公告)日：2006-06-13
申请号：US11011994
申请日：2004-12-14
申请人： Kochan Ju , Cheng Horng , Youfeng Zheng , Simon Liao , Jei-Wei Chang
发明人： Kochan Ju , Cheng Horng , Youfeng Zheng , Simon Liao , Jei-Wei Chang
IPC分类号： B05D5/12 , G11B5/84
CPC分类号： G11B5/33 , G11B5/29 , G11B5/31 , Y10T29/49037 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： Currently, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by inserting a high permeability, high resistivity, thin film shield on the top or bottom (or both) sides of the spin valve sensor. A permeability greater than about 500 is required together with a resistivity about 5 times greater than that of the free layer and an MrT value for the thin film shield that is 4 times greater than that of the free layer. Five embodiments of the invention are described.
摘要翻译：目前，自旋阀头的屏蔽到屏蔽分离不能低于约800，这主要是由于传感器到引线短路问题。现在已经通过在自旋阀传感器的顶部或底部（或两个）侧上插入高磁导率，高电阻率的薄膜屏蔽来克服这个问题。需要大于约500的磁导率，其电阻率大约为自由层的电阻率的约5倍，薄膜屏蔽层的电阻值大于自由层的4倍层。描述本发明的五个实施例。

50. 发明申请

US20050094321A1 Integrated spin valve head 失效
公开(公告)号：US20050094321A1
公开(公告)日：2005-05-05
申请号：US11011957
申请日：2004-12-14
申请人： Kochan Ju , Cheng Horng , Youfeng Zheng , Simon Liao , Jei-Wei Chang
发明人： Kochan Ju , Cheng Horng , Youfeng Zheng , Simon Liao , Jei-Wei Chang
IPC分类号： G01R33/09 , B05D7/00 , G11B5/127 , G11B5/187 , G11B5/29 , G11B5/31 , G11B5/33 , G11B5/39 , H01F10/16 , H01F10/30 , H01F10/32 , H01L43/08 , H01L43/12 , H04R31/00
CPC分类号： G11B5/33 , G11B5/29 , G11B5/31 , Y10T29/49037 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： Currently, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by inserting a high permeability, high resistivity, thin film shield on the top or bottom (or both) sides of the spin valve sensor. A permeability greater than about 500 is required together with a resistivity about 5 times greater than that of the free layer and an MrT value for the thin film shield that is 4 times greater than that of the free layer. Five embodiments of the invention are described.

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